| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 03/06/2003 | US20030045049 Method of forming chalcogenide comprising devices |
| 03/06/2003 | US20030041452 Filling plugs through chemical mechanical polish |
| 03/06/2003 | DE10119463C2 Verfahren zur Herstellung einer Chalkogenid-Halbleiterschicht des Typs ABC¶2¶ mit optischer Prozesskontrolle A process for producing a chalcogenide semiconductor layer of the type ABC¶2¶ with optical process control |
| 02/27/2003 | WO2003017282A1 Memory cell |
| 02/27/2003 | US20030039924 Method for making programmable resistance memory element using silylated photoresist |
| 02/20/2003 | US20030036232 Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory. |
| 02/20/2003 | US20030035314 Programmable microelectronic devices and methods of forming and programming same |
| 02/13/2003 | US20030032254 Resistance variable device, analog memory device, and programmable memory cell |
| 02/12/2003 | CN1101600C Temp. sensor (F element) with analog, switch and frequency outputs |
| 02/06/2003 | US20030027398 Method for making small pore for use in programmable resistance memory element |
| 02/04/2003 | US6514788 Method for manufacturing contacts for a Chalcogenide memory device |
| 01/30/2003 | WO2003009302A1 Semiconductor memory device |
| 01/28/2003 | US6512241 Phase change material memory device |
| 01/28/2003 | US6511862 Modified contact for programmable devices |
| 01/14/2003 | US6507061 Multiple layer phase-change memory |
| 01/02/2003 | US20030003709 Barrier material encapsulation of programmable material |
| 01/02/2003 | US20030003691 Reduced area intersection between electrode and programming element |
| 01/02/2003 | US20030002312 Pore structure for programmable device |
| 01/02/2003 | US20030001242 Adhesive material for programmable device |
| 01/02/2003 | US20030001229 Chalcogenide comprising device |
| 01/02/2003 | US20030001211 Modified contact for programmable devices |
| 12/27/2002 | WO2002103436A2 Thin planar switches and their applications |
| 12/26/2002 | US20020197566 Method for making programmable resistance memory element |
| 12/26/2002 | US20020195621 Programmable resistance memory element and method for making same |
| 12/19/2002 | US20020192880 Method for stabilizing a tunnel juntion component and a stabilized tunnel juntion component |
| 12/19/2002 | US20020190350 Programmable sub-surface aggregating metallization structure and method of making same |
| 12/19/2002 | US20020190289 PCRAM memory cell and method of making same |
| 12/17/2002 | US6495395 Electrical and thermal contact for use in semiconductor devices |
| 12/11/2002 | CN1384395A Non-linear element and electro-optical device, their manufacture and electronic instrument |
| 12/10/2002 | US6492656 Reduced mask chalcogenide memory |
| 12/05/2002 | WO2002097863A2 Method for manufacturing contacts for a chalcogenide memory device |
| 12/05/2002 | US20020182835 Method for manufacturing contacts for a Chalcogenide memory device |
| 12/05/2002 | US20020179896 Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
| 11/28/2002 | WO2002095920A1 Electron tunneling device |
| 11/28/2002 | WO2002095832A2 Applications for and tunneling device |
| 11/28/2002 | US20020175322 Method to create a controlable ovanic phase-change semiconductor memory device and methods of fabricating the same |
| 11/28/2002 | US20020175273 High speed electron tunneling device and applications |
| 11/26/2002 | US6487106 Programmable microelectronic devices and method of forming and programming same |
| 11/21/2002 | US20020171078 Metal-oxide electron tunneling device for solar energy conversion |
| 11/21/2002 | US20020170172 Method for making a diode device |
| 11/19/2002 | CA2113465C Improved thin-film structure for chalcogenide electrical switching devices and process therefor |
| 11/14/2002 | WO2002091496A2 Reversible field-programmable electric interconnects |
| 11/14/2002 | US20020168852 Plated chalcogenide random access memory formed by plating the bottom copper electrode with a conductive silver material |
| 11/14/2002 | US20020168820 Microelectronic programmable device and methods of forming and programming the same |
| 11/07/2002 | US20020163057 Reversible field-programmable electric interconnects |
| 10/31/2002 | US20020160551 Memory elements and methods for making same |
| 10/24/2002 | WO2002084729A2 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring |
| 10/24/2002 | DE10119463A1 Production of a chalcogenide halide of the ABC2 type comprises arranging metallic precursor layers, chalcogenizing with simultaneous optical process control, irradiating with light, and surface chalcogenizing to form the ABC2 phase |
| 10/16/2002 | EP0601068B1 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 10/10/2002 | US20020145684 Method of manufacturing nonlinear element, method of manufacturing electrooptic device, electrooptic device, and electronic apparatus |
| 10/08/2002 | US6462353 Method for fabricating a small area of contact between electrodes |
| 10/02/2002 | CN1372326A Indium surfide and gallium surfide for ultrahigh density data storage device and phase transformation meidum of indium-gallium surfide |
| 09/19/2002 | US20020132417 Agglomeration elimination for metal sputter deposition of chalcogenides |
| 09/19/2002 | US20020131309 Memory, writing apparatus, reading apparatus, writing method, and reading method |
| 09/19/2002 | US20020130312 Column-row addressable electric microswitch arrays and sensor matrices employing them |
| 09/18/2002 | EP1240677A1 Method for stabilizing a tunnel junction component and a stabilized tunnel junction component |
| 09/12/2002 | US20020127886 Method to manufacture a buried electrode PCRAM cell |
| 09/12/2002 | US20020127781 Method for forming conductors in semiconductor devices |
| 09/05/2002 | US20020123248 Methods of metal doping a chalcogenide material |
| 09/05/2002 | US20020123170 PCRAM cell manufacturing |
| 09/05/2002 | US20020123169 Methods of forming non-volatile resistance variable devices, and non-volatile resistance variable devices |
| 08/28/2002 | EP1235227A2 Programmable sub-surface aggregating metallization structure |
| 08/27/2002 | US6441395 Column-row addressable electric microswitch arrays and sensor matrices employing them |
| 08/27/2002 | US6440837 Method of forming a contact structure in a semiconductor device |
| 08/22/2002 | US20020113250 Indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide phase-change media for ultra-high-density data-storage devices |
| 08/21/2002 | EP1233418A1 Phase-change media for ultra-high-density data-storage devices |
| 08/08/2002 | US20020106849 Method of forming non-volatile resistance variable devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and non-volatile resistance variable devices |
| 08/07/2002 | EP0939957A4 Programmable metallization cell structure and method of making same |
| 07/24/2002 | EP0694214B1 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 07/23/2002 | US6423621 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same |
| 07/18/2002 | US20020093601 Two-terminal type non-linear element, manufacturing method and liquid crystal display panel |
| 07/18/2002 | US20020093100 Method for forming conductors in semiconductor devices |
| 07/16/2002 | US6420725 Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
| 07/11/2002 | US20020090800 Electronic apparatus and manufacturing method for an electronic apparatus |
| 07/09/2002 | US6418049 Programmable sub-surface aggregating metallization structure and method of making same |
| 07/09/2002 | US6417060 Method for making a diode device |
| 07/04/2002 | US20020086524 Memory elements and methods for making same |
| 06/27/2002 | US20020080647 Metal structure for a phase-change memory device |
| 06/20/2002 | US20020074658 High-resistivity metal in a phase-change memory cell |
| 06/13/2002 | US20020072188 Non-volatile resistance variable devices and method of forming same, analog memory devices and method of forming same, programmable memory cell and method of forming same, and method of structurally changing a non-volatile device |
| 06/11/2002 | US6404665 Compositionally modified resistive electrode |
| 06/05/2002 | CN1352808A Electrically programmable memory element with improved contacts |
| 05/29/2002 | CN1351379A Memory recording device, reading-out device, recording and reading-out devices |
| 05/23/2002 | WO2002013284A3 Memory element and method for production of a memory element |
| 05/22/2002 | CN1350705A Metal-insulator-metal diodes and methods of manufacture |
| 05/22/2002 | CN1350489A Information recording medium and method for manufacturing the same |
| 05/21/2002 | US6391688 Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
| 05/14/2002 | US6388268 Semiconducting YBCO device and superconducting YBCO device locally converted by AFM tip and manufacturing methods therefor |
| 05/14/2002 | US6386685 Ink jet recording head, ink jet apparatus provided with the same, and ink jet recording method |
| 05/10/2002 | WO2002037500A1 Organic bistable device and organic memory cells |
| 05/07/2002 | US6384880 Dielectric film obtained by anodizing one of the conductive films in an aqueous electrolyte solution after heat treatment; hydrogen present in a region between the conductive and dielectric films |
| 05/02/2002 | EP1202285A2 Memory, writing apparatus, reading apparatus, writing method, and reading method |
| 05/01/2002 | CN1347571A Electrostatically controlled tunneling transistor |
| 04/23/2002 | US6376284 Method of fabricating a memory device |
| 04/18/2002 | US20020045323 Method for making programmable resistance memory element |
| 04/17/2002 | EP1196924A1 Method of programming phase-change memory element |
| 04/09/2002 | US6369431 Method for forming conductors in semiconductor devices |
| 04/09/2002 | US6368705 Metal-insulator layer of particles of a refractory metal that forms an intrinsic oxide when exposed to ambient oxygen |
| 04/04/2002 | US20020038883 Compositionally modified resistive electrode |
| 03/28/2002 | US20020036931 Electrically programmable memory element with reduced area of contact and method for making same |