Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
08/2007
08/28/2007US7262427 Structure for phase change memory and the method of forming same
08/23/2007WO2007093190A1 Electric contacts with a minimal contact surface for non-volatile memory cells
08/23/2007US20070196696 Thin film memory device having a variable resistance
08/22/2007EP1820226A1 Dielectric antifuse for electro-thermally programmable device
08/22/2007CN101022151A Programmable resistor material storage array with air insulating unit
08/22/2007CN101022120A A programming method for a threshold pressure-controlled phase-change random access memory
08/21/2007US7259387 Nonvolatile semiconductor memory device
08/16/2007US20070190722 Method to form upward pointing p-i-n diodes having large and uniform current
08/16/2007US20070187663 Damascene phase change memory
08/15/2007CN101017879A Method for improving the pulse trigger resistor random memory fatigue resisting characteristic
08/15/2007CN101017878A Phase change ram comprising resistive element having diode function and methods of manufacturing and operating the same
08/14/2007US7256429 Memory cell with buffered-layer
08/14/2007US7256130 Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells
08/14/2007US7255906 Information recording medium and method for producing the same
08/08/2007CN101013741A Organic memory devices and methods of fabricating such devices
08/08/2007CN101013738A Vertical side wall active pin structures in a phase change memory and manufacturing methods
08/08/2007CN101013737A Thermally insulated phase change memory device and manufacturing method
08/08/2007CN101013736A A pipe shaped phase change memory
08/08/2007CN101013716A Thin film fuse phase change cell with thermal isolation pad and manufacturing method
08/07/2007US7254053 Active programming and operation of a memory device
08/07/2007US7253430 Controllable ovonic phase-change semiconductor memory device
08/07/2007US7253429 Electrically programmable memory element
08/07/2007US7253108 Process for forming a thin film of TiSiN, in particular for phase change memory devices
08/02/2007WO2007086325A1 Electric element, memory device and semiconductor integrated circuit
08/02/2007WO2007053474A3 Increasing phase change memory column landing margin
08/01/2007EP1812977A1 Electroless plating of metal caps for chalcogenide-based memory devices
08/01/2007EP1812976A1 Metal-insulator-metal device
08/01/2007CN101010793A Method for manufacturing an electric device with a layer of conductive material contacted by nanowire
08/01/2007CN101009358A Semiconductor unit, memory unit and memory unit array and its forming method
08/01/2007CN101009211A Self-aligned manufacturing method for thin film fuse phase change RAM
07/2007
07/31/2007US7251157 Semiconductor device
07/26/2007US20070170413 Semiconductor memory
07/25/2007EP1811564A1 Electrical fuse device based on a phase-change memory element and corresponding programming method
07/25/2007CN101005114A Integrated circuit device and fabrication using metal-doped chalcogenide materials
07/25/2007CN101005113A Method for forming self-aligned thermal isolation cell for a variable resistance memory array
07/25/2007CN101005112A Non-volatile memory element and method of manufacturing the same
07/25/2007CN101005092A Resistive random access memory device including an amorphous solid electrolyte layer
07/25/2007CN101005056A Electrode structure for use in an integrated circuit
07/24/2007US7247573 Process for forming tapered trenches in a dielectric material
07/24/2007US7247511 Thin film phase-change memory
07/24/2007US7247357 Image display device
07/19/2007US20070164398 Co-sputter deposition of metal-doped chalcogenides
07/18/2007EP1808899A2 Quantum-size electronic devices and operating conditions thereof
07/18/2007CN101000946A Method of forming phase change material thin film, and method of manufacturing phase change memory device using the same
07/18/2007CN101000945A Phase storage element andmanuafcturing method thereof
07/18/2007CN101000944A Phase storage element and manufacturing method thereof
07/18/2007CN101000920A Self-align planerized bottom electrode phase change memory and manufacturing method
07/17/2007US7245543 Data read circuit for use in a semiconductor memory and a method therefor
07/17/2007US7244956 Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured
07/12/2007WO2007078664A2 Phase change current density control structure
07/12/2007US20070159867 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
07/12/2007US20070158716 Conductive memory stack with sidewall
07/12/2007US20070158635 Semiconductor memory device and method for fabricating the same
07/11/2007EP1806427A2 Method of forming phase change material thin film, and method of manufacturing phase change memory device using the same
07/11/2007EP1683157B1 Phase change memory element with improved cyclability
07/11/2007CN1996635A Phase change memory cell and manufacturing method
07/11/2007CN1996634A Phase change memory device using carbon nanotube and method for fabricating the same
07/11/2007CN1996633A Phase-varying storage layer, its making method and phase-varying storage unit
07/11/2007CN1996609A Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same
07/11/2007CN1996608A Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories
07/11/2007CN1996572A Method of fabricating phase change ram
07/11/2007CN1996570A Nonvolatile memory device and method of forming the same
07/10/2007US7242605 Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance range
07/10/2007US7242603 Method of operating a complementary bit resistance memory sensor
07/10/2007US7242019 Shunted phase change memory
07/05/2007US20070155117 Phase change memory and method therefor
07/04/2007CN1993842A Multi-terminal chalcogenide switching devices
07/04/2007CN1992368A Semiconductor device and method of manufacturing the same
07/03/2007US7238607 Method to minimize formation of recess at surface planarized by chemical mechanical planarization
06/2007
06/28/2007WO2007072308A1 A vertical phase change memory cell and methods for manufacturing thereof
06/27/2007EP1801898A2 Integrated circuit device and fabrication using metal-doped chalcogenide materials
06/27/2007EP1801897A1 Improved method of producing PMC type memory cells
06/27/2007EP1801896A1 Process for manufacturing a selection device including a threshold switching layer with reduced current leakage, and such selection device, in particular for phase change memory devices
06/27/2007EP1800314A2 Memory using mixed valence conductive oxides
06/27/2007EP1393432A4 Electron tunneling device
06/27/2007CN1988200A Gas wall electrode side connection phase shift storage and its producing method
06/26/2007US7235419 Method of making a memory cell
06/26/2007US7235407 System and method for forming a bipolar switching PCMO film
06/21/2007US20070138467 Forming phase change memories
06/21/2007DE102004020297B4 Verfahren zur Herstellung resistiv schaltender Speicherbauelemente A process for producing resistive switching memory devices
06/20/2007EP1797604A1 Electric device with nanowires comprising a phase change material
06/20/2007EP1797565A1 Resistive memory element with heater
06/20/2007CN1983660A Method of manufacturing non-volatile memory element
06/20/2007CN1983619A 数据读/写装置 Data read / write device
06/20/2007CN1983617A Electrically rewritable non-volatile memory element and method of manufacturing the same
06/20/2007CN1983616A Phase-change memory device and method of manufacturing same
06/20/2007CN1983615A Phase-change memory device and method of manufacturing same
06/19/2007US7232703 Non-volatile memory and the fabrication method
06/14/2007WO2007065264A1 Method for voltage controlled oscillator yield enhancement
06/14/2007US20070134841 Electrical and thermal contact for use in semiconductor devices and corresponding methods
06/13/2007EP1794821A1 Resistively switching semiconductor memory
06/13/2007CN1979813A Manufacturing method for phase change ram with electrode layer process
06/07/2007US20070128792 Multiple data state memory cell
06/06/2007EP1793424A1 Nonvolatile memory
06/06/2007CN1976083A Phase change memory cell and manufacturing method
06/06/2007CN1976082A CuxO-based resistance random access memory and producing method thereof
06/06/2007CN1976004A Surface structure used for embolism surface
06/05/2007US7227221 Multiple bit chalcogenide storage device
06/05/2007US7227171 Small area contact region, high efficiency phase change memory cell and fabrication method thereof
06/05/2007US7227170 Multiple bit chalcogenide storage device
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