Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
12/2007
12/06/2007US20070278470 Phase-change memory device and manufacturing process thereof
12/05/2007CN101083300A Organic memory devices including organic material and fullerene layers and related methods
12/05/2007CN101083298A Resistor random access memory cell with reduced active area and reduced contact areas
12/04/2007US7304880 Electric switch and memory device using the same
12/04/2007US7303939 Electro- and electroless plating of metal in the manufacture of PCRAM devices
11/2007
11/29/2007US20070274120 CBRAM cell with a reversible conductive bridging mechanism
11/28/2007CN101080825A Electroless plating of metal caps for chalcogenide-based memory devices
11/28/2007CN101079438A Single-mask phase change memory element
11/21/2007EP1858093A2 Memory cell including doped phase change material
11/21/2007EP1858074A2 Nonvolatile memory device using oxygen-deficient metal oxide layer and method of manufacturing the same
11/21/2007EP1856747A1 Method for manufacturing an electrolyte material layer in semiconductor memory devices
11/21/2007CN101075632A Phase change memory cell employing a gebite layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the sa
11/21/2007CN101075630A Phase change memory device and manufacturing method
11/21/2007CN101075629A Nonvolatile memory device using oxygen-deficient metal oxide layer and method of manufacturing the same
11/21/2007CN100350614C Electrodes for RRAM memory cells
11/15/2007US20070264812 High density chalcogenide memory cells
11/15/2007US20070263433 Semiconductor device
11/14/2007CN101071844A Bridge resistance random access memory device and method with a singular contact structure
11/14/2007CN101071843A Resistor storage device unit structure and its preparing method
11/14/2007CN101071753A Method for manufacturing a narrow structure on an integrated circuit
11/13/2007US7295463 Phase-changeable memory device and method of manufacturing the same
11/13/2007US7294875 Nanoscale programmable structures and methods of forming and using same
11/08/2007WO2007127014A2 Programming a normally single phase chalcogenide material for use as a memory or fpla
11/08/2007WO2007126690A2 Phase change memory elements using self- aligned phase change material layers and methods of making and using same
11/08/2007WO2007126669A1 Multilevel nonvolatile memory cell comprising a resistivity- switching oxide or nitride and an antifuse
11/08/2007WO2007125674A1 Variable resistance element, and its manufacturing method
11/08/2007US20070258279 Thin film phase-change memory
11/07/2007EP1851809A1 Snse-based limited reprogrammable cell
11/07/2007CN101069296A Dielectric antifuse for electro-thermally programmable device
11/07/2007CN101068039A Structures and methods of a bistable resistive random access memory
11/07/2007CN101068038A Variable resistance memory device with buffer layer at lower electrode
11/06/2007US7291857 Non-volatile memory
11/06/2007US7291556 Method for forming small features in microelectronic devices using sacrificial layers
10/2007
10/31/2007CN101064361A 存储元件以及半导体装置 Memory element and semiconductor device
10/31/2007CN101064360A Current-limiting device based on sulfur series compound phase-change material and method for making the same
10/31/2007CN101064359A Non-volatile memory devices including variable resistance material
10/31/2007CN100346412C Information recording medium and producing method thereof
10/30/2007US7288781 Programmable structure, an array including the structure, and methods of forming the same
10/25/2007WO2007119733A1 Method for fabricating variable resistance element
10/24/2007EP1848048A2 Memory cell having sidewall spacer for improved homogeneity
10/24/2007EP1848047A2 Transitioning the state of phase change material by annealing
10/24/2007EP1846962A1 Phase change memory cell with high read margin at low power operation
10/24/2007EP1846961A1 Phase change memory cell with high read margin at low power operation
10/24/2007CN101060161A Phase change memory cell with vacuum spacer
10/23/2007US7285464 Nonvolatile memory cell comprising a reduced height vertical diode
10/18/2007WO2007116749A1 Nonvolatile memory element and its manufacturing method
10/18/2007US20070242504 Shunted phase change memory
10/17/2007EP1845567A1 Phase-change memory device and manufacturing process thereof.
10/17/2007EP1844501A1 Fabrication of a phase-change resistor using a backend process
10/17/2007EP1844500A1 Pillar phase change memory cell
10/17/2007CN101057345A Protection of active layers of memory cells during processing of other elements
10/17/2007CN101057329A 半导体器件 Semiconductor devices
10/17/2007CN101057298A Memory using mixed valence conductive oxides
10/17/2007CN101055917A Resistive memory element, operating method thereof, and data processing system using the memory element
10/17/2007CN100344008C Magnetic funnel node device and storage array
10/16/2007US7282387 Electro- and electroless plating of metal in the manufacture of PCRAM devices
10/11/2007WO2007114099A1 Switching device and method for manufacturing switching device
10/11/2007US20070235712 Resistance variable memory cells
10/11/2007US20070235709 Memory element with improved contacts
10/11/2007US20070235707 Multi-terminal phase change devices
10/10/2007CN101051670A Preparing method for RRAM to avoid forming phenomenon using CuxO as storage medium
10/10/2007CN100342562C Method for preparing phase-changing film material nanometer wire
10/04/2007WO2007110815A1 Electric device with phase change resistor
10/03/2007EP1579266A4 Thin planar switches and their applications
10/03/2007CN101047230A Phase change memory unit structure, phase change memory unit and its forming method
10/02/2007US7276722 Non-volatile memory structure
10/02/2007US7276175 Semiconductor device fabrication method
09/2007
09/27/2007WO2007109021A1 Reduced power consumption phase change memory and methods for forming the same
09/27/2007US20070221975 Bipolar switching PCMO capacitor
09/27/2007US20070221919 Diode with Lead Terminal for Solar Cell
09/27/2007US20070221906 Phase-Changeable Memory Devices Including Nitrogen and/or Silicon Dopants
09/26/2007CN101043067A Method for fabricating a pillar-shaped phase change memory element
09/26/2007CN101042903A Method for producing sputtering target for phase-change memory
09/26/2007CN100340010C Memory cell with an asymmetrical area
09/25/2007US7273809 Method of fabricating a conductive path in a semiconductor device
09/19/2007EP1434232B1 Memory cell
09/19/2007CN101038951A Manufacturing method for pipe-shaped electrode phase change memory
09/18/2007US7271440 Method and apparatus for forming an integrated circuit electrode having a reduced contact area
09/13/2007WO2007102341A1 Resistance-varying type element, semiconductor device, and method for manufacturing the element
09/13/2007WO2007078664A3 Phase change current density control structure
09/13/2007US20070210362 Non-volatile memory and the fabrication method
09/12/2007CN101034733A Electrode for phase change memory device and method
09/12/2007CN101034732A Resistance random memory device
09/12/2007CN100337335C Current-jump-control circuit including abrupt metal-insulator phase transition device
09/07/2007WO2007099595A1 Semiconductor device and process for producing the same
09/06/2007DE10351017B4 Phasenwechsel-Speicherzellen und Verfahren zur Herstellung derselben Phase change memory cells and methods of manufacturing the same
09/05/2007EP1830362A2 Phase change memory fabricated using self-aligned processing
09/05/2007CN101030623A Electrode structure having at least two oxide layers and non-volatile memory device having the same
09/05/2007CN101030622A Nonvolatile memory device and nonvolatile memory array including the same
09/05/2007CN101030593A Phase change random access memory and methods of fabricating the same
09/04/2007US7264988 Electro-and electroless plating of metal in the manufacture of PCRAM devices
08/2007
08/30/2007US20070201255 Chalcogenide glass constant current device, and its method of fabrication and operation
08/30/2007US20070200137 Dilithium crystal trigger module - solid state
08/30/2007DE112006000072T5 Phasenwechselspeicherzelle, die durch ein Strukturschrumpfungsmaterialverfahren definiert wird Phase change memory cell, which is defined by a pattern shrink material process
08/29/2007CN101027797A Electric device with nanowires comprising a phase change material
08/29/2007CN101026223A I type phase change storage unit with heat insulation structure
08/29/2007CN101026178A Heat efficiency reduced minimum phase change memory and its making method
08/29/2007CN101026177A Nonvolatile memory device and its operating method
08/29/2007CN100334735C Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device
08/29/2007CN100334712C Memory element and its production method
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