| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 06/05/2007 | US7227169 Programmable surface control devices and method of making same |
| 05/31/2007 | WO2007062022A1 Reversible resistivity-switching metal oxide or nitride layer with added metal |
| 05/31/2007 | WO2007062014A1 Memory cell comprising nickel-cobalt oxide switching element |
| 05/31/2007 | WO2005008723A3 Quantum coherent switch utilizing density wave (dw) material |
| 05/30/2007 | CN1971964A Vacuum cell thermal isolation for a phase change memory device |
| 05/30/2007 | CN1971963A Memory cell device and manufacturing method |
| 05/30/2007 | CN1971962A Phase change memory device and manufacturing method |
| 05/30/2007 | CN1971961A Thermal isolation for an active-sidewall phase change memory cell |
| 05/30/2007 | CN1971960A Vacuum jacketed electrode for phase change memory element |
| 05/30/2007 | CN1971931A Vacuum jacket for phase change memory element |
| 05/30/2007 | CN1971930A Preparation method of parallel connection multivalue phase-changing memorizer |
| 05/30/2007 | CN1970564A Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device |
| 05/29/2007 | US7223627 Memory element and its method of formation |
| 05/24/2007 | WO2007058175A1 Semiconductor device |
| 05/24/2007 | WO2007057972A1 Semiconductor device |
| 05/24/2007 | US20070114587 Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same |
| 05/23/2007 | EP1787329A2 Electric device comprising phase change material |
| 05/23/2007 | CN1967897A A pipe shaped phase change memory |
| 05/23/2007 | CN1967896A Thermally contained/insulated phase change memory device and method (combined) |
| 05/23/2007 | CN1967895A Spacer electrode small pin phase change memory ram and manufacturing method |
| 05/23/2007 | CN1967894A I-shaped phase change memory cell |
| 05/23/2007 | CN1967861A Electrically rewritable non-volatile memory element |
| 05/23/2007 | CN1967688A Information recording medium and method for manufacturing the same |
| 05/22/2007 | CA2312841C Programmable sub-surface aggregating metallization structure and method of making same |
| 05/17/2007 | US20070108433 Semiconductor memory device and method of fabricating the same |
| 05/17/2007 | US20070108432 Damascene phase change memory |
| 05/16/2007 | EP1786046A2 Non-volatile memory device and fabrication method thereof |
| 05/16/2007 | CN1965418A Layered resistance variable memory device and method of fabrication |
| 05/16/2007 | CN1316563C High temperature annealing of spin coated Pr(1-x)ca(x)Mno3 thin film for RRAM application |
| 05/15/2007 | US7217945 Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby |
| 05/10/2007 | WO2007053474A2 Increasing phase change memory column landing margin |
| 05/10/2007 | US20070102691 Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 05/09/2007 | EP1783845A1 Phase change memory having multilayer thermal insulation |
| 05/09/2007 | EP1783844A2 Phase change memory cell including multiple phase change material portions |
| 05/09/2007 | CN1960020A Non-volatile memory element and method of manufacturing the same |
| 05/09/2007 | CN1960019A Non-volatile memory element and method of manufacturing the same |
| 05/08/2007 | US7214632 Using selective deposition to form phase-change memory cells |
| 05/08/2007 | US7214583 Memory cell with an asymmetric crystalline structure |
| 05/03/2007 | US20070099309 High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus |
| 05/02/2007 | EP1780814A2 Phase change memory cell |
| 05/02/2007 | EP1780728A2 Electrode structure for use in an integrated circuit |
| 05/02/2007 | EP1159743B1 Programmable microelectronic devices and methods of forming and programming same |
| 05/02/2007 | CN1956208A Phase change memory device and methods of operating and fabricating the same |
| 05/02/2007 | CN1314028C Information recording medium and its manufacturing method |
| 05/01/2007 | US7211819 Damascene phase change memory |
| 05/01/2007 | US7211199 Magnetically-and electrically-induced variable resistance materials and method for preparing same |
| 04/26/2007 | WO2007046883A1 One-time programmable crosspoint memory with a diode as an antifuse |
| 04/26/2007 | WO2007046130A1 Semiconductor device |
| 04/26/2007 | WO2007046128A1 Semiconductor device and its fabrication method |
| 04/25/2007 | CN1954431A Sidewall formation for high density polymer memory element array |
| 04/25/2007 | CN1954428A Semiconductor memory |
| 04/25/2007 | CN1953230A Nonvolatile memory device comprising nanodot and manufacturing method for the same |
| 04/25/2007 | CN1953229A Germanium-titanium base memory material for phase transition memory and its manufacture method |
| 04/25/2007 | CN1953228A Phase change memory devices with reduced programming current |
| 04/18/2007 | CN1311553C Nonvolatile memory and method for making same |
| 04/17/2007 | US7205562 Phase change memory and method therefor |
| 04/11/2007 | EP1173896B1 Electrostatically controlled tunneling transistor |
| 04/10/2007 | US7202520 Multiple data state memory cell |
| 04/10/2007 | US7202104 Co-sputter deposition of metal-doped chalcogenides |
| 04/05/2007 | US20070075434 Method for producing a PCM memory element and corresponding PCM memory element |
| 04/05/2007 | DE10339070B4 Herstellungsverfahren für einen Lateralen Phasenwechsel-Speicher Manufacturing method for a lateral phase change memory |
| 04/04/2007 | EP1770778A1 Apparatus for obtaining double stable resistance values, method for manufacturing the same, metal oxide thin film and method for manufacturing the same |
| 04/04/2007 | EP1476876B1 Multiple data state memory cell |
| 04/03/2007 | US7199444 Memory device, programmable resistance memory cell and memory array |
| 03/29/2007 | WO2007034542A1 Semiconductor device |
| 03/29/2007 | WO2005093839A3 Electric device comprising phase change material |
| 03/29/2007 | US20070072125 Phase change memory element with improved cyclability |
| 03/29/2007 | US20070069402 Lateral phase change memory |
| 03/29/2007 | US20070069263 Electric switch and memory device using the same |
| 03/28/2007 | EP1766678A1 Method for manufacturing an electric device with a layer of conductive material contacted by nanowire |
| 03/28/2007 | CN1938853A Semiconductor device |
| 03/28/2007 | CN1938781A Thin film memory device having a variable resistance |
| 03/27/2007 | US7196387 Memory cell with an asymmetrical area |
| 03/27/2007 | US7196351 Forming phase change memories |
| 03/27/2007 | US7196346 Semiconductor memory device and method for fabricating the same |
| 03/22/2007 | US20070062808 Sputtering Target for Phase-Change Memory, Film for Phase Change Memory formed by using the Target, and Method for Producing the Target |
| 03/21/2007 | EP1764847A1 Ring heater for a phase change memory device |
| 03/21/2007 | EP1764837A1 Semiconductor structure, in particular phase change memory device having a uniform height heater |
| 03/21/2007 | CN1934706A Multi-terminal device having logic function |
| 03/21/2007 | CN1933208A Phase change memory device and method of manufacturing the device |
| 03/21/2007 | CN1933207A Phase transformation memory storing unit and producing method thereof |
| 03/15/2007 | US20070057341 Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured |
| 03/14/2007 | CN1929161A Electrically rewritable non-volatile memory element and method of manufacturing the same |
| 03/14/2007 | CN1929160A Method and structure for improving property of phase-changing storage |
| 03/08/2007 | WO2007026509A1 Variable resistance element and method for producing same |
| 03/08/2007 | WO2006130800A3 Rewriteable memory cell comprising a transistor and resistance-switching material in series |
| 03/08/2007 | US20070053786 Phase change film for semiconductor nonvolatile memory and sputtering target for forming phase change film |
| 03/07/2007 | EP1760797A1 Electrically programmable memory element with improved contacts |
| 03/07/2007 | CN1925186A Shaping a phase change layer in a phase change memory cell |
| 03/07/2007 | CN1925185A Non-volatile organic resistance random access memory device and method of manufacturing the same |
| 03/07/2007 | CN1925184A Nonvolatile memory devices and methods of manufacturing the same |
| 03/06/2007 | US7186998 Multi-terminal device having logic functional |
| 03/06/2007 | US7186658 Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasma |
| 03/06/2007 | US7186569 Conductive memory stack with sidewall |
| 03/01/2007 | WO2007023569A1 Nonvolatile semiconductor storage device and its write method |
| 02/28/2007 | CN1922673A Information recording medium and method for producing the same |
| 02/28/2007 | CN1921169A Method for fabricating chalcogenide-applied memory |
| 02/27/2007 | US7183567 Using selective deposition to form phase-change memory cells |
| 02/27/2007 | US7183141 Reversible field-programmable electric interconnects |
| 02/22/2007 | WO2007021913A1 Reproducible resistance variable insulating memory devices and methods for forming same |