Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
09/2005
09/27/2005US6949453 Agglomeration elimination for metal sputter deposition of chalcogenides
09/27/2005US6949435 Asymmetric-area memory cell
09/27/2005US6949402 Method of forming a non-volatile resistance variable device
09/24/2005CA2500937A1 Memory cell having an electric field programmable storage element, and method of operating same
09/22/2005US20050208699 Phase Change Memory Cell On Silicon-On Insulator Substrate
09/22/2005US20050207265 Memory cell with an asymmetric crystalline structure
09/22/2005US20050205964 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method
09/21/2005EP1576677A2 Electric device comprising a layer of phase change material and method of manufacturing the same
09/21/2005EP1576676A1 Electric device comprising phase change material
09/21/2005EP1576670A2 Electric device with phase change material and parallel heater
09/21/2005CN1672214A 互补位pcram感测放大器和操作方法 Complementary bit pcram sense amplifier and method of operation
09/21/2005CN1670980A A chalcogenide memory cell having a horizontal electrode and method for forming same
09/21/2005CN1670979A Phase change memory cell on silicon-on insulator substrate
09/21/2005CN1670963A Neuron synaptic bouton simulated flexible triode
09/20/2005US6946704 Semiconductor memory cell and method of forming same
09/20/2005US6946673 Integrated resistor, phase-change memory element including this resistor, and process for the fabrication thereof
09/20/2005US6946392 Filling plugs through chemical mechanical polish
09/20/2005US6946347 Non-volatile memory structure
09/15/2005US20050202647 Process for creating metal-insulator-metal devices
09/15/2005US20050202588 Method of forming a chalcogenide material containing device
09/15/2005US20050202580 Process for creating metal-insulator-metal devices
09/15/2005US20050202204 Information recording medium and method for manufacturing the same
09/15/2005US20050202200 Phase-change recording material and information recording medium
09/15/2005US20050201182 Semiconductor device
09/15/2005US20050201136 Electrically programmable memory element with reduced area of contact and method for making same
09/15/2005DE102004018859B3 Memory storage circuit e.g. for flip flop circuit for making available video or audio data for given length of time in terminal, has memory cell with PMC resistor having solid electrolyte material with write circuit
09/14/2005EP1575043A2 Information recording medium and method for manufacturing the same
09/14/2005CN1669091A Programming a phase-change material memory
09/13/2005US6943395 Phase random access memory with high density
09/13/2005US6943365 Electrically programmable memory element with reduced area of contact and method for making same
09/09/2005WO2005083810A2 Programmable structure and device including a metal oxide ion conductor and method of forming the same
09/08/2005US20050195632 Non-volatile memory with a single transistor and resistive memory element
09/08/2005US20050194622 Nonvolatile capacitor of a semiconductor device, semiconductor memory device including the capacitor, and method of operating the same
09/08/2005US20050194620 Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby
09/08/2005DE102004007633A1 Speicherbauelement-Elektrode mit Oberflächen-Struktur Memory device with electrode surface structure
09/07/2005EP1570532A2 Phase change memory and manufacturing method therefor
09/07/2005EP1434232A4 Memory cell
09/07/2005CN1666172A Methods of computing with digital multistate phase change materials
09/07/2005CN1665044A Metallic diode and metallic triode
09/07/2005CN1664941A Information recording medium and method for manufacturing the same
09/07/2005CN1218384C Self-aligned, programmable phase change memory and method for manufacturing the same
09/06/2005US6940745 Programmable microelectronic devices and methods of forming and programming same
09/06/2005US6939724 Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer
09/01/2005WO2005081256A1 Electrically writeable and erasable memory medium
09/01/2005US20050191804 Method for forming a reduced active area in a phase change memory structure
08/2005
08/31/2005CN1217429C Method for producing metal-insulator-metal nonlinear element, metal-insulator-metal nonlinear element and liquid crystal display device
08/31/2005CN1217428C Metal-insulator-metal diodes and methods of manufacture
08/30/2005US6937502 Re-recordable data storage medium utilizing conduction barrier
08/30/2005US6936840 Phase-change memory cell and method of fabricating the phase-change memory cell
08/25/2005US20050186334 Semiconductor device fabrication method
08/25/2005US20050185444 Phase-changeable memory device and method of manufacturing the same
08/25/2005US20050184282 Phase change memory cell and method of its manufacture
08/24/2005EP1566810A2 Resistive memory device with stable writing
08/24/2005EP1565949A2 Semiconductor memory device and method for the production thereof
08/23/2005US6933516 Forming tapered lower electrode phase-change memories
08/18/2005WO2005076355A1 Storage
08/18/2005WO2005076280A1 Semiconductor device
08/18/2005US20050180191 Forming tapered lower electrode phase-change memories
08/18/2005US20050180189 Memory device electrode with a surface structure
08/18/2005DE10297786T5 Programmierung eines Phasenübergangsmaterialspeichers Programming a phase change material storage
08/17/2005EP0939957B1 Programmable metallization cell structure and method of making same
08/17/2005CN1655358A Storage device
08/16/2005US6930913 Contact structure, phase change memory cell, and manufacturing method thereof with elimination of double contacts
08/16/2005US6929983 Method of forming a current controlling device
08/11/2005WO2005072090A2 Multi-terminal devices having logic functionality
08/11/2005US20050175822 Phase-change recording material and information recording medium
08/11/2005US20050174861 Phase-change memory device and method of manufacturing the same
08/11/2005US20050174854 Memory device
08/11/2005US20050173691 Structure for phase change memory and the method of forming same
08/11/2005CA2553771A1 Multi-terminal devices having logic functionality
08/10/2005EP1562235A2 Semiconductor memory device and its manufacturing method
08/09/2005US6928022 Write driver circuit in phase change memory device and method for applying write current
08/09/2005US6927411 Programmable structure, an array including the structure, and methods of forming the same
08/09/2005US6927410 Memory device with discrete layers of phase change memory material
08/09/2005US6927120 Method for forming an asymmetric crystalline structure memory cell
08/09/2005US6927093 Method for making programmable resistance memory element
08/04/2005US20050169070 Small electrode for a chalcogenide switching device and method for fabricating same
08/04/2005US20050169043 Semiconductor memory device and its manufacturing method
08/04/2005US20050167699 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory
08/04/2005US20050167689 Non-volatile zero field splitting resonance memory
08/04/2005US20050167656 Phase-change memory cell and method of fabricating the phase-change memory cell
08/04/2005US20050167645 Phase change memory devices including memory elements having variable cross-sectional areas
08/03/2005EP1559146A1 Utilizing atomic layer deposition for programmable device
08/03/2005CN1650444A Programmable structure, an array including the structure, and methods of forming the same
08/03/2005CN1650443A Utilizing atomic layer deposition for programmable device
08/03/2005CN1650442A Modified contact for programmable devices
08/03/2005CN1650419A Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device
08/03/2005CN1649158A Semiconductor memory device and its manufacturing method
07/2005
07/28/2005WO2005011011A8 Etching method for making chalcogenide memory elements
07/28/2005US20050162907 Resistance variable memory elements based on polarized silver-selenide network growth
07/28/2005US20050162303 Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor
07/28/2005US20050161747 Thin film phase-change memory
07/27/2005EP1557875A1 Process for forming tapered trenches in a dielectric material
07/27/2005CN1647292A Silver-selenide/chalcogenide glass stack for resistance variable memory
07/27/2005CN1647278A Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures
07/27/2005CN1647209A Multiple data state memory cell
07/21/2005WO2005066969A1 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
07/21/2005US20050158994 PCMO spin-coat deposition
07/21/2005US20050158950 Non-volatile memory cell comprising a dielectric layer and a phase change material in series
07/21/2005US20050157573 Method of forming non-volatile resistance variable devices
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