| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 02/22/2007 | WO2007020832A1 Switching device |
| 02/22/2007 | WO2006104824A3 Memory device with improved data retention |
| 02/21/2007 | EP1576670B1 Electric device with phase change material and parallel heater |
| 02/21/2007 | CN1917249A Thin film plate phase change ram circuit and manufacturing method |
| 02/21/2007 | CN1917248A Method for manufacturing a small pin on integrated circuits or other devices |
| 02/20/2007 | US7180771 Device and method for pulse width control in a phase change memory device |
| 02/20/2007 | US7180767 Multi-level memory device and methods for programming and reading the same |
| 02/15/2007 | WO2007018026A1 Variable resistor element and production method therefor and storage device provided with it |
| 02/15/2007 | US20070035041 Methods of forming and using memory cell structures |
| 02/15/2007 | US20070035027 Method for forming conductors in semiconductor devices |
| 02/14/2007 | EP1753045A1 Method for fabricating an integrated device comprising a structure with a solid electrolyte |
| 02/14/2007 | EP1751767A1 Thin film memory device having a variable resistance |
| 02/14/2007 | CN1913191A Method of fabricating a resistance based memory device and the memory device |
| 02/14/2007 | CN1913169A Nonvolatile semiconductor memory device and method of manufacturing the same |
| 02/14/2007 | CN1300839C Process for preparing nano electronic phase change storage |
| 02/08/2007 | WO2007016169A1 Phase change memory cell and method of formation |
| 02/07/2007 | CN1909239A Phase change material, phase change random access memory including the same, and methods of manufacturing and operating the same |
| 02/06/2007 | US7173317 Electrical and thermal contact for use in semiconductor devices |
| 01/31/2007 | EP1748501A1 Microelectronic component |
| 01/31/2007 | EP1748488A1 Semiconductor memory |
| 01/30/2007 | US7170843 High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus |
| 01/30/2007 | US7169635 Programmable structure, an array including the structure, and methods of forming the same |
| 01/25/2007 | WO2007010746A1 Semiconductor storage comprising variable resistor element |
| 01/25/2007 | US20070018157 Methods of forming phase change storage cells for memory devices |
| 01/24/2007 | CN1901217A Novel channel structure phase change storage |
| 01/23/2007 | US7167387 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory |
| 01/23/2007 | US7166415 Phase-change recording material used for information recording medium and information recording medium employing it |
| 01/18/2007 | WO2007007606A1 Variable resistance device |
| 01/18/2007 | DE10231646B4 Nichtflüchtige Speicherzellen A non-volatile memory cells |
| 01/17/2007 | CN1898798A Electro-resistance element and method of manufacturing the same |
| 01/17/2007 | CN1898750A Resistive memory element with heater |
| 01/17/2007 | CN1898749A Memory device, memory circuit and semiconductor integrated circuit having variable resistance |
| 01/17/2007 | CN1897320A Novel phase change memory and its forming method |
| 01/17/2007 | CN1897292A Semiconductor memorizer |
| 01/16/2007 | US7164147 Semiconductor memory device and method of fabricating the same |
| 01/16/2007 | US7163837 Method of forming a resistance variable memory element |
| 01/11/2007 | US20070007506 Layered resistance variable memory device and method of fabrication |
| 01/10/2007 | CN1893104A Phase change memory device and method of fabricating the same |
| 01/10/2007 | CN1294030C Information recording medium and method for manufacturing the same |
| 01/09/2007 | US7161225 Reducing shunts in memories with phase-change material |
| 01/09/2007 | US7161167 Lateral phase change memory |
| 01/03/2007 | EP1738421A1 Layered resistance variable memory device and method of fabrication |
| 01/03/2007 | CN1889285A Non-volatile memory component based on RbAg4I5 film and producing method thereof |
| 01/02/2007 | US7157287 Method of substrate surface treatment for RRAM thin film deposition |
| 01/02/2007 | US7156964 Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target |
| 12/28/2006 | US20060291268 Intergrated semiconductor memory and method for producing an integrated semiconductor memory |
| 12/28/2006 | US20060289850 Phase change memory and phase change recording medium |
| 12/26/2006 | US7153721 Resistance variable memory elements based on polarized silver-selenide network growth |
| 12/21/2006 | US20060284160 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof |
| 12/20/2006 | EP1734593A2 Phase change memory cell defined by imprint lithography |
| 12/20/2006 | EP1430548B1 Manufacturing of non-volatile resistance variable devices and programmable memory cells |
| 12/20/2006 | CN1881641A Manufacturing methods for thin film fuse phase change ram |
| 12/20/2006 | CN1881640A Thin film fuse phase change ram and manufacturing method |
| 12/19/2006 | US7151273 Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 12/19/2006 | US7151029 Memory device and method of making the same |
| 12/14/2006 | WO2006132813A1 Memory device with switching glass layer |
| 12/14/2006 | WO2006132045A1 Nonvolatile storage element and fabrication method thereof |
| 12/14/2006 | US20060281218 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method |
| 12/14/2006 | US20060281217 Methods For Fabricating Phase Changeable Memory Devices |
| 12/13/2006 | EP1732148A1 Phase change memory cell having ring contacts |
| 12/13/2006 | EP1731895A2 Micro structure, cantilever, scanning probe microscope and a method for measuring deformation quantity for the micro structure |
| 12/13/2006 | EP1730782A1 Method for producing a pcm element and corresponding pcm memory element |
| 12/13/2006 | CN1879234A Multiple bit chalcogenide storage device |
| 12/13/2006 | CN1879233A Resistively switching semiconductor memory |
| 12/12/2006 | US7149108 Memory array of a non-volatile RAM |
| 12/12/2006 | US7148533 Memory resistance film with controlled oxygen content |
| 12/07/2006 | WO2006130800A2 Rewriteable memory cell comprising a transistor and resistance-switching material in series |
| 12/07/2006 | US20060274575 Electrically programmable memory element with reduced area of contact |
| 12/07/2006 | US20060273301 High speed electron tunneling devices |
| 12/06/2006 | EP1729355A1 Self-aligned process for manufacturing phase change memory cells |
| 12/06/2006 | CN1873996A Phase change random access memory devices and methods of operating the same |
| 12/05/2006 | US7145794 Programmable microelectronic devices and methods of forming and programming same |
| 12/05/2006 | US7145791 Memory device having variable resistive memory element |
| 11/30/2006 | WO2006110518A3 Heating phase change material |
| 11/30/2006 | WO2006099158A3 Memory device with improved switching speed and data retention |
| 11/30/2006 | US20060270099 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry |
| 11/30/2006 | US20060266990 Lateral phase change memory and method therefor |
| 11/29/2006 | EP1726017A1 Memory device, memory circuit and semiconductor integrated circuit having variable resistance |
| 11/29/2006 | EP1171920B1 Electrically programmable memory element with improved contacts |
| 11/29/2006 | CN1870314A Method for reducing heating electrode area of phase-change memory |
| 11/29/2006 | CN1287420C PCMO thin-membrane low-temperature treatment on Ir base-material for RRAM application |
| 11/28/2006 | US7142450 Programmable sub-surface aggregating metallization structure and method of making same |
| 11/23/2006 | WO2006124153A1 Phase change memory electrodes including conductive oxide or conductive oxide forming material |
| 11/23/2006 | US20060261380 Small electrode for a chalcogenide switching device and method for fabricating same |
| 11/22/2006 | EP1724850A2 Low power phase change memory cell with large read signal |
| 11/22/2006 | CN1866570A 存储器件和半导体器件 Memory device and semiconductor device |
| 11/22/2006 | CN1866568A 半导体装置 Semiconductor device |
| 11/22/2006 | CN1866567A Semiconductor device and manufacturing method thereof and method for writing memory element |
| 11/22/2006 | CN1866496A Method for preparing nanoelectronic memory by electron beam exposure and mechanochemical polishing process |
| 11/21/2006 | US7138687 Thin film phase-change memory |
| 11/16/2006 | WO2006121473A1 Method and structure for peltier-controlled phase change memory |
| 11/16/2006 | US20060258079 Thin film phase-change memory |
| 11/09/2006 | WO2006117063A1 Phase change memory device |
| 11/09/2006 | WO2006094867A8 Method for manufacturing an electrolyte material layer in semiconductor memory devices |
| 11/09/2006 | US20060252176 Memory element and its method of formation |
| 11/09/2006 | US20060250534 Thin planar switches and their applications |
| 11/08/2006 | CN1860609A Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof |
| 11/08/2006 | CN1858922A Method for preparing phase shift storage by silicon wet etching and keying process |
| 11/07/2006 | US7132675 Programmable conductor memory cell structure and method therefor |
| 11/02/2006 | WO2006115208A1 Memory device and semiconductor integrated circuit |