| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 05/11/2004 | US6734455 Agglomeration elimination for metal sputter deposition of chalcogenides |
| 05/11/2004 | US6733956 Memory material deposited over the top edge of the bottom electrode in a slot-like opening formed in a dielectric material. a method of making the opening using a silylated photoresist. |
| 05/06/2004 | US20040087076 Reduced area intersection between electrode and programming element |
| 05/06/2004 | US20040087074 Phase changeable memory cells and methods of fabricating the same |
| 05/06/2004 | US20040087066 Flexible metal foil substrate display and method for forming same |
| 05/06/2004 | US20040085833 Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode |
| 05/06/2004 | US20040085797 Device having a state dependent upon the state of particles dispersed in a carrier |
| 05/06/2004 | US20040084727 Semiconductor device and learning method thereof |
| 05/06/2004 | EP1416547A2 Light-emitting device and field emission display having such light-emitting devices |
| 05/04/2004 | US6730930 Memory element and method for fabricating a memory element |
| 05/04/2004 | US6730547 Integrated circuit device and fabrication using metal-doped chalcogenide materials |
| 04/29/2004 | US20040082153 Pore structure for programmable device |
| 04/29/2004 | US20040082099 Elimination of dendrite formation during metal/chalcogenide glass deposition |
| 04/27/2004 | US6727192 Methods of metal doping a chalcogenide material |
| 04/22/2004 | WO2004034482A2 Electric device comprising phase change material |
| 04/22/2004 | WO2003085675A3 Phase-change memory device |
| 04/22/2004 | US20040078415 Methods of factoring and modular arithmetic |
| 04/22/2004 | US20040078406 Methods of factoring and modular arithmetic |
| 04/22/2004 | US20040077123 Low heat loss and small contact area composite electrode for a phase change media memory device |
| 04/22/2004 | US20040076051 Electro- and electroless plating of metal in the manufacturing of PCRAM devices |
| 04/21/2004 | EP1159743A4 Programmable microelectronic devices and methods of forming and programming same |
| 04/21/2004 | CN1490889A High density data memory media and producing method thereof |
| 04/20/2004 | US6723643 Method for chemical mechanical polishing of thin films using end-point indicator structures |
| 04/15/2004 | WO2004032256A1 Utilizing atomic layer deposition for programmable device |
| 04/15/2004 | WO2004032147A1 Nanoparticles used as a charge carrier sink in resistive storage elements |
| 04/15/2004 | WO2003071614A3 Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 04/15/2004 | US20040069982 Compositionally modified resistive electrode |
| 04/15/2004 | DE10245554A1 Nanopartikel als Ladungsträgersenke in resistiven Speicherelementen Nanoparticles as charge carrier sink in resistive memory elements |
| 04/08/2004 | US20040067608 Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby |
| 04/08/2004 | US20040065912 Electrically programmable nonvolatile variable capacitor |
| 04/08/2004 | US20040065818 High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus |
| 04/01/2004 | WO2004027877A1 Variable resistance functional body and its manufacturing method |
| 04/01/2004 | WO2003079443A3 Manufacturing methods for resistance variable material cells |
| 03/31/2004 | EP0846343B1 Electrically erasable memory elements characterized by reduced current and improved thermal stability |
| 03/31/2004 | CN1144231C Programmable metallization cell and method of making |
| 03/30/2004 | US6714954 Methods of factoring and modular arithmetic |
| 03/25/2004 | WO2004025659A1 Programming a phase-change material memory |
| 03/25/2004 | WO2003102756A3 Molecular-scale computational circuits based on charge-density-wave phenomena and methods related thereto |
| 03/23/2004 | US6710826 Two-terminal type non-linear element, manufacturing method and liquid crystal display panel |
| 03/23/2004 | US6710423 Chalcogenide comprising device |
| 03/23/2004 | US6709958 Integrated circuit device and fabrication using metal-doped chalcogenide materials |
| 03/23/2004 | US6709887 Method of forming a chalcogenide comprising device |
| 03/18/2004 | WO2003023875A3 Phase change material memory device |
| 03/18/2004 | US20040053461 Graded GexSe100-x concentration in PCRAM |
| 03/18/2004 | US20040052117 Fabrication of ultra-small memory elements |
| 03/18/2004 | US20040051161 Non-volatile memory and the fabrication method thereof |
| 03/18/2004 | US20040051157 Non-volatile resistance variable device |
| 03/16/2004 | US6707060 Column-row addressable electric microswitch arrays and sensor matrices employing them |
| 03/04/2004 | US20040043585 Methods to form a memory cell with metal-rich metal chalcogenide |
| 03/04/2004 | US20040043553 Elimination of dendrite formation during metal/chalcogenide glass deposition |
| 03/04/2004 | US20040043245 Method to control silver concentration in a resistance variable memory element |
| 03/04/2004 | US20040043137 Electrical resistance alloy layer; optical recording media |
| 03/04/2004 | US20040042265 Method and apparatus for controlling metal doping of a chalcogenide memory element |
| 03/04/2004 | US20040042259 Single polarity programming of a pcram structure |
| 03/03/2004 | EP1393432A1 Electron tunneling device |
| 03/03/2004 | EP1393377A2 Applications for and tunneling device |
| 03/02/2004 | US6700211 Method for forming conductors in semiconductor devices |
| 02/26/2004 | WO2004017438A1 Adhesive material for programmable device |
| 02/26/2004 | WO2004017437A1 Modified contact for programmable devices |
| 02/26/2004 | WO2004017436A2 Non-volatile memory element and production method thereof and storage memory arrangement |
| 02/26/2004 | US20040038480 Method of manufacture of a PCRAM memory cell |
| 02/26/2004 | US20040038445 Method of making programmable resistance memory element |
| 02/26/2004 | US20040038432 Programmable conductor memory cell structure and method therefor |
| 02/26/2004 | US20040037179 Phase-changeable devices having an insulating buffer layer and methods of fabricating the same |
| 02/26/2004 | US20040036571 Magnetically-and electrically-induced variable resistance materials and method for preparing same |
| 02/26/2004 | US20040036103 Memory device and method of manufacturing the same |
| 02/26/2004 | US20040036065 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same |
| 02/25/2004 | CN1477699A Memory element and its production method |
| 02/24/2004 | US6696355 Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory |
| 02/12/2004 | WO2003021692A3 Mutliple layer phase-change memory |
| 02/12/2004 | US20040029351 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures |
| 02/12/2004 | US20040029326 Thin-film transistors formed on a flexible substrate |
| 02/12/2004 | US20040027849 Organic bistable device and organic memory cells |
| 02/12/2004 | US20040026731 Programmable resistance memory element with titanium rich adhesion layer |
| 02/12/2004 | US20040026730 Programmable resistance memory element with layered memory material |
| 02/12/2004 | US20040026686 Spacer chalcogenide memory method and device |
| 02/12/2004 | US20040026682 Nano-dot memory and fabricating same |
| 01/29/2004 | WO2003044802A3 Complementary bit pcram (programmable conductor ram) and method of operation |
| 01/29/2004 | WO2003020998A3 Integrated circuit device and fabrication using metal-doped chalcogenide materials |
| 01/29/2004 | US20040016923 Column-row addressable electric microswitch arrays and sensor matrices employing them |
| 01/28/2004 | EP1339111A9 Contact structure, phase change memory cell, and manufacturing method thereof with elimination of double contacts |
| 01/28/2004 | EP1339110A9 Phase change memory cell and manufacturing method thereof using minitrenches |
| 01/28/2004 | EP1331675A9 Integrated resistive element, phase-change memory element including said resistive element, and method of manufacture thereof |
| 01/22/2004 | WO2004008535A1 Nonvolatile memory and its manufacturing method |
| 01/22/2004 | US20040012009 Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof |
| 01/15/2004 | US20040007718 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
| 01/14/2004 | EP1380050A2 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring |
| 01/13/2004 | US6677629 Electric or electronic component and application as non volatile memory and device with surface acoustic waves |
| 01/08/2004 | WO2003019691A3 Manufacturing of non-volatile resistance variable devices and programmable memory cells |
| 01/06/2004 | US6674115 Multiple layer phrase-change memory |
| 01/06/2004 | US6673700 Reduced area intersection between electrode and programming element |
| 01/06/2004 | US6673691 Method for resistance switch using short electric pulses |
| 01/01/2004 | US20040001374 Non-volatile memory |
| 12/30/2003 | US6671710 Methods of computing with digital multistate phase change materials |
| 12/30/2003 | US6670713 Method for forming conductors in semiconductor devices |
| 12/30/2003 | US6670628 Low heat loss and small contact area composite electrode for a phase change media memory device |
| 12/24/2003 | CN1132255C Two-terminal non-linear resistive device and method for producing same |
| 12/18/2003 | WO2003036736A3 Tunable cantilever apparatus and method for making same |
| 12/18/2003 | US20030231530 Phase change memory cell and manufacturing method thereof using minitrenches |
| 12/18/2003 | US20030231458 Metal-insulator-metal (MIM) capacitor and method for fabricating the same |