| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 02/02/2005 | CN1574410A Semiconductor memory device and method of fabricating the same |
| 02/02/2005 | CN1574409A Method for adjusting the threshold voltage of a memory cell and chalcogenide material |
| 02/02/2005 | CN1574363A Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same |
| 02/02/2005 | CN1574288A Asymmetric crystalline structure memory cell |
| 02/02/2005 | CN1574215A Oxygen content system and method for controlling memory resistance properties |
| 02/02/2005 | CN1574118A Adjustable phase-change material resistor |
| 02/02/2005 | CN1574093A Device and method for pulse width control in a phase change memory device |
| 02/02/2005 | CN1574092A Phase random access memory with high density |
| 02/02/2005 | CN1574091A Multi-level memory device and methods for programming and reading the same |
| 02/02/2005 | CN1574076A Nonvolatile semiconductor memory device and control method thereof |
| 02/02/2005 | CN1573844A 图像显示装置 The image display apparatus |
| 02/01/2005 | US6849891 RRAM memory cell electrodes |
| 02/01/2005 | US6849868 Methods and apparatus for resistance variable material cells |
| 01/27/2005 | WO2005008783A1 Switching element, switching element driving method, rewritable logic integrated circuit and memory element |
| 01/27/2005 | WO2005008723A2 Quantum coherent switch utilizing density wave (dw) material |
| 01/27/2005 | WO2005008643A2 Re-recordable data storage medium utilizing conduction barrier |
| 01/27/2005 | US20050019975 Phase change memory devices having phase change area in porous dielectric layer and methods for manufacturing the same |
| 01/27/2005 | US20050019699 Non-volatile resistance variable device |
| 01/27/2005 | US20050018593 Information recording medium and method for producing the same |
| 01/27/2005 | US20050018526 Phase-change memory device and manufacturing method thereof |
| 01/27/2005 | US20050018509 Complementary bit resistance memory sensor and method of operation |
| 01/27/2005 | US20050018275 Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities |
| 01/27/2005 | US20050017233 Performance PCRAM cell |
| 01/26/2005 | EP1501124A1 Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device |
| 01/26/2005 | EP1501091A2 Information recording medium and method for producing the same |
| 01/26/2005 | CN1571160A Memory device |
| 01/20/2005 | US20050012086 Programmable resistance memory element and method for making same |
| 01/19/2005 | EP1498952A2 Oxygen content system and method for controlling memory resistance properties |
| 01/19/2005 | CN1568551A Multiple layer phase-change memory |
| 01/18/2005 | US6844608 Composite of complex in matrix; dissociation under applied electricity; electroconductivity passageways |
| 01/18/2005 | US6844582 Semiconductor device and learning method thereof |
| 01/18/2005 | US6844564 Non-volatile memory |
| 01/13/2005 | WO2004086459A3 Method for making tapered opening for programmable resistance memory element |
| 01/13/2005 | US20050006722 Process for forming a thin film of TiSiN, in particular for phase change memory devices |
| 01/13/2005 | US20050006681 Semiconductor memory device and method for fabricating the same |
| 01/13/2005 | US20050006638 Re-recordable data storage medium utilizing conduction barrier |
| 01/12/2005 | CN1564337A Improved unit structure for reducing phase transition memory writing current, and method thereof |
| 01/11/2005 | US6841793 Phase-changeable devices having an insulating buffer layer and methods of fabricating the same |
| 01/11/2005 | US6841397 Method for forming pore structure for programmable device |
| 01/06/2005 | US20050003602 Programmable resistance memory element with multi-regioned contact |
| 01/06/2005 | US20050002227 Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same |
| 01/06/2005 | US20050001284 Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured |
| 01/04/2005 | US6838307 Programmable conductor memory cell structure and method therefor |
| 12/30/2004 | US20040264244 Nonvolatile semiconductor memory device and control method thereof |
| 12/30/2004 | DE102004025975A1 Programming method for phase-change random access memory device, involves removing set pulse when memory device is determined to be in desired set state such that duration of set pulse is controlled based on state of memory device |
| 12/29/2004 | CN1559090A Electric device comprising solid electrolyte |
| 12/23/2004 | US20040258866 Image display device |
| 12/23/2004 | US20040257854 Multi-level memory device and methods for programming and reading the same |
| 12/23/2004 | US20040257848 Method for adjusting the threshold voltage of a memory cell |
| 12/23/2004 | US20040256694 Electrically programmable memory element with improved contacts |
| 12/23/2004 | DE10323414A1 Solid state electrolyte memory cell has barrier layer between ion conductive material of variable resistance and the cathode |
| 12/22/2004 | EP1489670A1 Method for adjusting the threshold voltage of a memory cell |
| 12/22/2004 | EP1489632A2 Adjustable resistor |
| 12/22/2004 | EP1489623A1 Multi-level memory device and methods for programming and reading the same |
| 12/22/2004 | CN1556550A Preparation method of phase storage unit device |
| 12/21/2004 | US6833559 Non-volatile resistance variable device |
| 12/16/2004 | US20040251988 Adjustable phase change material resistor |
| 12/16/2004 | US20040251551 Phase changeable memory devices including carbon nano tubes and methods for forming the same |
| 12/15/2004 | EP1486985A2 Nonvolatile semiconductor memory device and control method thereof |
| 12/14/2004 | US6831728 Method of manufacturing nonlinear element, method of manufacturing electrooptic device, electrooptic device, and electronic apparatus |
| 12/14/2004 | US6831330 Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
| 12/14/2004 | US6831019 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes |
| 12/14/2004 | US6830952 Spacer chalcogenide memory method and device |
| 12/09/2004 | WO2004107466A1 Electric switch and storage device using same |
| 12/09/2004 | US20040248339 High density chalcogenide memory cells |
| 12/09/2004 | US20040246804 Device and method for pulse width control in a phase change memory device |
| 12/09/2004 | US20040246768 Memory cell |
| 12/09/2004 | US20040245603 Electrically programmable memory element with improved contacts |
| 12/09/2004 | US20040245557 Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same |
| 12/09/2004 | US20040245554 Phase random access memory with high density |
| 12/08/2004 | EP1484799A2 Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same |
| 12/08/2004 | EP1483795A2 Manufacturing methods for resistance variable material cells |
| 12/08/2004 | EP0843901B1 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 12/08/2004 | CN1554125A 相变材料存储器装置 The phase change material memory device |
| 12/07/2004 | US6828081 Method and system for lithography using phase-change material |
| 12/02/2004 | US20040238958 Electrode structure for use in an integrated circuit |
| 12/02/2004 | US20040238918 Method of manufacture of a PCRAM memory cell |
| 12/01/2004 | EP1482551A1 Process for forming a thin film of TiSiN, in particular for phase change memory devices |
| 12/01/2004 | CN1551239A Electric field pulse inductive resistance element and semiconductor using same |
| 11/30/2004 | US6825135 Elimination of dendrite formation during metal/chalcogenide glass deposition |
| 11/30/2004 | US6825107 Method for fabricating a memory chip |
| 11/30/2004 | US6824814 Lanthanum/calcium/lead/manganese oxide (lcpmo); injecting perovskite precursor solution into spin-coating apparatus for deposition onto silicon substrate/electrode, baking, then annealing |
| 11/25/2004 | US20040235247 Asymmetric crystalline structure memory cell |
| 11/25/2004 | US20040235235 Co-sputter deposition of metal-doped chalcogenides |
| 11/25/2004 | US20040235204 Programmable structure, an array including the structure, and methods of forming the same |
| 11/25/2004 | US20040235200 Oxygen content system and method for controlling memory resistance properties |
| 11/25/2004 | US20040234895 Semiconductor memory device and method of fabricating the same |
| 11/25/2004 | US20040233769 Semiconductor memory cell and method of forming same |
| 11/25/2004 | US20040233748 Memory device |
| 11/25/2004 | US20040233728 Chalcogenide glass constant current device, and its method of fabrication and operation |
| 11/25/2004 | US20040232551 Electrode structure for use in an integrated circuit |
| 11/25/2004 | US20040232505 High speed electron tunneling devices |
| 11/24/2004 | EP1480273A2 Semiconductor memory device and method of fabricating the same |
| 11/24/2004 | EP1480225A2 Asymmetric memory cell |
| 11/24/2004 | EP1480209A1 Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target |
| 11/24/2004 | CN1550048A Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
| 11/18/2004 | WO2004100266A1 Non-volatile memory and method for manufacturing same |
| 11/18/2004 | WO2004100217A2 Field effect chalcogenide devices |
| 11/18/2004 | US20040229423 Electrode structure for use in an integrated circuit |
| 11/18/2004 | US20040228172 Conductive memory stack with sidewall |