| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 11/02/2006 | US20060246696 Method of forming a chalcogenide material containing device |
| 11/02/2006 | US20060245234 Method of operating a complementary bit resistance memory sensor and method of operation |
| 11/01/2006 | CN1855568A Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 10/31/2006 | US7130214 Low-current and high-speed phase-change memory devices and methods of driving the same |
| 10/31/2006 | US7129560 Thermal memory cell and memory device including the thermal memory cell |
| 10/31/2006 | US7129531 Programmable resistance memory element with titanium rich adhesion layer |
| 10/26/2006 | WO2004081977A3 Multi-terminal chalcogenide switching devices |
| 10/24/2006 | US7126841 Non-volatile memory with a single transistor and resistive memory element |
| 10/24/2006 | US7126179 Memory cell intermediate structure |
| 10/24/2006 | US7126152 Storage device |
| 10/24/2006 | US7126149 Phase change memory and phase change recording medium |
| 10/19/2006 | WO2006110518A2 Heating phase change material |
| 10/19/2006 | WO2006109622A1 Electrical device, memory device, and semiconductor integrated circuit |
| 10/19/2006 | WO2006108541A1 Phase change memory cell defined by a pattern shrink material process |
| 10/19/2006 | US20060234462 Method of operating a multi-terminal electronic device |
| 10/19/2006 | US20060234425 Method of manufacture of a PCRAM memory cell |
| 10/17/2006 | US7122824 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof |
| 10/11/2006 | EP1710850A1 Lateral phase change memory |
| 10/11/2006 | EP1710840A2 Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same |
| 10/11/2006 | EP1710807A1 Phase change memory cell with tubular heater and manufacturing method thereof |
| 10/10/2006 | US7119355 Lateral phase change memory and method therefor |
| 10/10/2006 | US7119353 Electric device with phase change material and method of manufacturing the same |
| 10/05/2006 | WO2006104824A2 Memory device with improved data retention |
| 10/04/2006 | EP1708292A2 Connection electrode for phase change material, corresponding phase change memory element and production method thereof |
| 10/04/2006 | EP1708291A2 Tunneling effect element and physical quantity to electrical quantity transducer |
| 10/04/2006 | EP1706904A2 Multi-terminal devices having logic functionality |
| 10/04/2006 | CN1842924A Methods and apparatus for producing resistance variable material cells |
| 10/03/2006 | US7116573 Switching element method of driving switching element rewritable logic integrated circuit and memory |
| 10/03/2006 | US7115992 Electrode structure for use in an integrated circuit |
| 10/03/2006 | US7115927 Phase changeable memory devices |
| 10/03/2006 | US7115504 Method of forming electrode structure for use in an integrated circuit |
| 10/03/2006 | US7115473 Method of fabrication of non-volatile memory |
| 09/28/2006 | US20060217492 Polymer material having carrier transport property, and organic thin film element, electronic device, and conductor line which use same |
| 09/27/2006 | EP1570532B1 Phase change memory and manufacturing method therefor |
| 09/26/2006 | US7112836 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method |
| 09/21/2006 | WO2006099158A2 Memory device with improved switching speed and data retention |
| 09/21/2006 | US20060211165 Methods for forming phase-change memory devices |
| 09/21/2006 | US20060208847 Electric device with phase change material and parallel heater |
| 09/21/2006 | US20060208249 Programmable conductor memory cell structure and method therefor |
| 09/20/2006 | CN1836342A Etching method for making chalcogenide memory elements |
| 09/19/2006 | US7109056 Electro-and electroless plating of metal in the manufacture of PCRAM devices |
| 09/14/2006 | US20060205108 Method for making tapered opening for programmable resistance memory element |
| 09/13/2006 | EP1170147B1 Information recording medium and method for manufacturing the same |
| 09/13/2006 | CN1833290A Multilayered phase change memory |
| 09/13/2006 | CN1832219A Phase transformation memory unit preparation method base on electromachining technology |
| 09/13/2006 | CN1832218A Method for preparing nonvolatile organic memory devices and nonvolatile organic memory devices prepared by the same |
| 09/12/2006 | US7106614 Memory circuit and method for providing an item of information for a prescribed period of time |
| 09/12/2006 | US7105864 Non-volatile zero field splitting resonance memory |
| 09/12/2006 | US7105852 High speed electron tunneling devices |
| 09/12/2006 | US7105396 Phase changeable memory cells and methods of fabricating the same |
| 09/12/2006 | US7105217 Phase-change recording material and information recording medium |
| 09/06/2006 | EP1697992A2 Sidewall formation for high density polymer memory element array |
| 09/06/2006 | CN1828962A Resistive memory device having resistor part for controlling switching window |
| 09/06/2006 | CN1828923A Phase change memory devices and fabrication methods thereof |
| 09/06/2006 | CN1828922A Phase change memory devices and fabrication methods thereof |
| 09/05/2006 | US7102151 Small electrode for a chalcogenide switching device and method for fabricating same |
| 09/05/2006 | US7102150 PCRAM memory cell and method of making same |
| 09/05/2006 | US7101728 Programmable structure including an oxide electrolyte and method of forming programmable structure |
| 08/31/2006 | WO2006091480A1 Snse-based limited reprogrammable cell |
| 08/31/2006 | US20060194403 PCMO thin film with controlled resistance characteristics |
| 08/30/2006 | EP1696441A1 Phase change memory device and a method of fabricating the same |
| 08/30/2006 | CN1825649A Heating electrode material for phase transformation memory and preparing method |
| 08/30/2006 | CN1825613A Method of operating and structure of phase change random access memory (pram) |
| 08/30/2006 | CN1825612A Phase-change ram and method for fabricating the same |
| 08/30/2006 | CN1272785C Phase change recording material for information recording medium and information recording medium using said material |
| 08/29/2006 | US7098068 Method of forming a chalcogenide material containing device |
| 08/29/2006 | US7098043 PCMO spin-coat deposition |
| 08/24/2006 | WO2002103436A3 Thin planar switches and their applications |
| 08/22/2006 | US7094700 forming a sidewall mask over a GexSey chalcogenide layer; plasma etching the chalcogenide layer in the presence of an NH3, N2H4, or CxHy etching gas; layer may be exposed to a fluorine material prior to etching |
| 08/17/2006 | WO2006086248A1 Memory device including barrier layer for improved switching speed and data retention |
| 08/17/2006 | WO2006084857A1 Phase change memory cell with high read margin at low power operation |
| 08/17/2006 | WO2006084856A1 Phase change memory cell with high read margin at low power operation |
| 08/17/2006 | US20060183335 Using an electron beam to write phase change memory devices |
| 08/17/2006 | US20060181932 Device and method for pulse width control in a phase change memory device |
| 08/16/2006 | CN1819297A Side wall active pin memory and manufacturing method |
| 08/16/2006 | CN1819296A Memory element, micro-electronics component, method of manufacture the same and storage information method |
| 08/16/2006 | CN1819295A Memory cell and method of forming same, memory cell array and operating method thereof |
| 08/15/2006 | US7092286 Electrically programmable memory element with reduced area of contact |
| 08/10/2006 | WO2006082008A1 Pillar phase change memory cell |
| 08/09/2006 | EP1688958A1 Method and device for controlling solid electrolyte cells |
| 08/09/2006 | EP1687855A1 Integrated semiconductor memory and method for producing an integrated semiconductor memory |
| 08/09/2006 | EP1087867A4 Memory element with memory material comprising phase-change material and dielectric material |
| 08/09/2006 | CN1815770A Nonvolatile memory device having two or more resistance elements and methods of forming and using the same |
| 08/08/2006 | US7087919 Layered resistance variable memory device and method of fabrication |
| 08/08/2006 | US7087468 Method for forming conductors in semiconductor devices |
| 08/08/2006 | US7087454 Fabrication of single polarity programmable resistance structure |
| 08/03/2006 | WO2006079952A1 Fabrication of phase-change resistor using a backend process |
| 08/03/2006 | WO2006053163A3 Protection of active layers of memory cells during processing of other elements |
| 08/02/2006 | EP1686624A1 Nonvolatile memory device made of electric resistance material and method of fabricating the same |
| 08/02/2006 | EP1685569A1 Phase change memory, phase change memory assembly, phase change memory cell, 2d phase change memory cell array, 3d phase change memory cell array and electronic component |
| 08/02/2006 | EP1554763B1 Electric device comprising phase change material |
| 08/02/2006 | CN1813361A Field effect chalcogenide devices |
| 08/02/2006 | CN1813360A Non-volatile memory element and production method thereof and storage memory arrangement |
| 08/02/2006 | CN1812118A Phase change memory device and method of fabricating the same |
| 08/02/2006 | CN1812096A Cross-point nonvolatile memory devices and methods of fabricating the same |
| 08/01/2006 | US7085154 Device and method for pulse width control in a phase change memory device |
| 08/01/2006 | CA2250504C Multibit single cell memory having tapered contact |
| 07/27/2006 | WO2006078505A2 A non-volatile memory cell comprising a dielectric layer and a phase change material in series |
| 07/27/2006 | WO2006077747A1 Nonvolatile semiconductor storage device |
| 07/27/2006 | US20060164880 Switching element method of driving switching element rewritable logic integrated circuit and memory |