Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
07/2005
07/21/2005US20050157567 Multiple data state memory cell
07/21/2005US20050156150 Phase change memory and phase change recording medium
07/20/2005EP1555700A2 Method for manufacturing a nonvolatile memory device with a variable resistor
07/20/2005EP1555693A1 Nonvolatile semiconductor memory device
07/20/2005EP1554763A2 Electric device comprising phase change material
07/20/2005CN1641881A Electrodes for RRAM memory cells
07/20/2005CN1641880A Method for manufacturing nonvolatile semiconductor memory device
07/20/2005CN1641879A Nonvolatile semiconductor memory device
07/14/2005US20050153504 Method for manufacturing nonvolatile semiconductor memory device
07/14/2005US20050152208 Phase change memory cell and manufacturing method thereof using minitrenches
07/14/2005US20050151277 Nonvolatile semiconductor memory device
07/14/2005US20050151156 Switchable resistive perovskite microelectronic device with multi-layer thin film structure
07/14/2005US20050151127 Variable resistance functional body, manufacturing method therefor and storage device
07/14/2005DE10297784T5 Atomare Schichtabscheidung bei programmierbaren Bauelementen Atomic layer deposition for programmable devices
07/13/2005CN1639868A Non-volatile memory and the fabrication method thereof
07/13/2005CN1639867A Nonvolatile memory and its manufacturing method
07/13/2005CN1638125A Nonvolatile capacitor of a semiconductor memory device, and method of operating the same
07/13/2005CN1210819C Electrically programmable memory element with improved contacts
07/12/2005US6917052 Modified contact for programmable devices
07/12/2005US6916710 Method for fabricating an array of ultra-small pores for chalcogenide memory cells
07/12/2005US6916696 Method for manufacturing a memory element
07/07/2005US20050148150 Memory element and its method of formation
07/07/2005US20050145984 Horizontal chalcogenide element defined by a pad for use in solid-state memories
07/07/2005US20050145910 Nonvolatile semiconductor memory device
07/06/2005CN1636163A Thin planar switches and their applications
06/2005
06/30/2005US20050142863 Process for forming tapered trenches in a dielectric material
06/30/2005US20050142731 Lateral phase change memory and method therefor
06/30/2005US20050139816 Memory devices having sharp-tipped phase change layer patterns and methods of forming the same
06/30/2005DE10356285A1 Integrierter Halbleiterspeicher und Verfahren zum Herstellen eines integrierten Halbleiterspeichers Integrated semiconductor memory and method for fabricating an integrated semiconductor memory,
06/29/2005EP1547796A1 Optical phase change Information recording medium and method for manufacturing the same
06/28/2005US6912147 Chalcogenide glass constant current device, and its method of fabrication and operation
06/28/2005US6911666 Flexible metal foil substrate display and method for forming same
06/28/2005US6911361 Low temperature processing of PCMO thin film on Ir substrate for RRAM application
06/28/2005CA2231377C Second-layer phase change memory array on top of a logic device
06/23/2005US20050136557 Reducing shunts in memories with phase-change material
06/23/2005US20050133778 Chalcogenide glass constant current device, and its method of fabrication and operation
06/22/2005EP1544899A2 Nonvolatile capacitor of a semiconductor memory device, and method of operating the same
06/22/2005EP1543569A2 Non-volatile memory element and production method thereof and storage memory arrangement
06/21/2005US6909107 Method for manufacturing sidewall contacts for a chalcogenide memory device
06/21/2005US6908812 Phase change material memory device
06/21/2005US6908808 Method of forming and storing data in a multiple state memory cell
06/16/2005WO2005008643A3 Re-recordable data storage medium utilizing conduction barrier
06/16/2005US20050130414 Methods for forming small features in microelectronic devices using sacrificial layers and structures fabricated by same
06/16/2005US20050127524 Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device
06/16/2005US20050127350 Field emission phase change diode memory
06/16/2005US20050127349 Phase change tip storage cell
06/16/2005US20050127348 Integrated circuit with upstanding stylus
06/15/2005EP1542277A2 Electrodes for RRAM memory cells
06/15/2005EP1542276A2 Memory cell with a layer having colossal magnetoresistance and an asymmetric area
06/15/2005CN1627547A Phase change tip storage cell
06/15/2005CN1627546A Field emission phase change diode memory
06/15/2005CN1206752C Arrays having electric microswitch and its drive method
06/09/2005WO2005053047A1 Integrated semiconductor memory and method for producing an integrated semiconductor memory
06/09/2005WO2005027134A3 Multiple bit chalcogenide storage device
06/09/2005US20050124155 Electrode structures and method to form electrode structures that minimize electrode work function variation
06/09/2005US20050124112 Asymmetric-area memory cell
06/09/2005US20050121697 Storage device
06/09/2005US20050121659 Non-volatile memory and the fabrication method thereof
06/08/2005EP1537584A1 Programming a phase-change material memory
06/08/2005CN1205608C Information recording medium and its mfg. method
06/07/2005US6903361 Non-volatile memory structure
06/07/2005CA2231386C Liquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixels
06/02/2005US20050119123 reversible phase change between electrically or optically detectable states can be caused by electric energy or electromagnetic energy; recording material has a crystal structure including lattice defects
06/02/2005US20050117388 Write driver circuit in phase change memory device and method for applying write current
06/02/2005US20050116237 Method for forming a flexible metal foil substrate display
06/02/2005US20050115829 Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
06/01/2005EP1536474A2 Memory device and storage apparatus
06/01/2005CN1622360A Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same
05/2005
05/31/2005US6900517 Non-volatile memory with phase-change recording layer
05/31/2005US6900468 Indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide phase-change media for ultra-high-density data-storage devices
05/26/2005US20050112896 Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory
05/26/2005US20050111290 Programmable sub-surface aggregating metallization structure and method of making same
05/26/2005US20050110983 Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same
05/25/2005EP1344223A4 Organic bistable device and organic memory cells
05/25/2005DE10349750A1 Phasenwechselspeicher, Phasenwechselspeicheranordnung, Phasenwechselspeicherzelle, 2D-Phasenwechselspeicherzellen-Array, 3D-Phasenwechselspeicherzellen-Array und Elektronikbaustein Phase change memory, phase change memory device, phase change memory cell, 2D phase change memory cell array, 3D phase change memory cell array and electronics module
05/25/2005CN1620732A Sticking material for programmable device
05/25/2005CN1620699A A programmable conductor random access memory and a method for writing thereto
05/25/2005CN1620693A Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
05/25/2005CN1203550C Memory, recording device, reading-out device, recording method and reading-out method
05/24/2005US6897467 Controllable ovanic phase-change semiconductor memory device
05/19/2005WO2005045935A2 Sidewall formation for high density polymer memory element array
05/19/2005WO2005045847A1 Phase change memory element with improved cyclability
05/19/2005US20050106860 [method of fabricating a contact]
05/19/2005US20050104231 Forming phase change memories
05/19/2005US20050104105 Differential negative resistance memory
05/17/2005US6894305 Phase-change memory devices with a self-heater structure
05/12/2005WO2005034244A3 Current controlling device
05/12/2005US20050098836 Current-jump-control circuit including abrupt metal-insulator phase transition device
05/12/2005US20050098800 Nonvolatile memory cell comprising a reduced height vertical diode
05/11/2005EP1530244A2 Current-jump-control circuit including abrupt metal-insulator phase transition device
05/11/2005CN1615544A Electrode structure for use in an integrated circuit
05/11/2005CN1614786A Current-jump-control circuit including abrupt metal-insulator phase transition device
05/10/2005US6891749 Resistance variable ‘on ’ memory
05/10/2005US6891747 Phase change memory cell and manufacturing method thereof using minitrenches
05/10/2005US6891742 Semiconductor memory device
05/10/2005US6891186 Electronic device having controllable conductance
05/10/2005US6890790 Co-sputter deposition of metal-doped chalcogenides
05/06/2005WO2005041303A1 Resistance change element, manufacturing method thereof, memory including the element, and drive method of the memory
05/06/2005WO2005041196A1 Phase change memory, phase change memory assembly, phase change memory cell, 2d phase change memory cell array, 3d phase change memory cell array and electronic component
05/05/2005US20050093043 Non-volatile memory and the fabrication method
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