| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
|---|
| 03/20/2002 | EP0938731A4 Memory element with energy control mechanism |
| 03/14/2002 | WO2002021598A1 Electronic device having controllable conductance |
| 03/14/2002 | WO2002021542A1 Microelectronic programmable device and methods of forming and programming the same |
| 03/13/2002 | EP1186064A1 Metal-insulator-metal diodes and methods of manufacture |
| 03/13/2002 | CN1340213A Microelectronic device for storing information and method thereof |
| 03/13/2002 | CN1340197A Programmable microelectronic device and methods of forming and programming same |
| 02/27/2002 | CN1338120A Quantum-size electronic devices and operating conditions thereof |
| 02/26/2002 | US6350557 Thin-film two-terminal elements, method of production thereof, liquid crystal display |
| 02/19/2002 | US6348365 PCRAM cell manufacturing |
| 02/14/2002 | WO2002013284A2 Memory element and method for production of a memory element |
| 02/14/2002 | WO2000063981A9 Metal-insulator-metal diodes and methods of manufacture |
| 02/14/2002 | US20020017701 Electrically programmable memory element with raised pore |
| 02/12/2002 | CA2261639C Programmable metallization cell structure and method of making same |
| 02/07/2002 | US20020016054 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same |
| 01/31/2002 | WO2002009206A1 Electrically programmable memory element |
| 01/24/2002 | US20020009858 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same |
| 01/23/2002 | EP1173896A1 Electrostatically controlled tunneling transistor |
| 01/23/2002 | EP0786151B1 Liquid crystal display with threshold switching device |
| 01/17/2002 | US20020006735 Integrated circuit memory cell having a small active area and method of forming same |
| 01/16/2002 | EP1171920A1 Electrically programmable memory element with improved contacts |
| 01/10/2002 | US20020004296 Electrical and thermal contact for use in semiconductor devices |
| 01/09/2002 | EP1170147A1 Information recording medium and method for manufacturing the same |
| 01/08/2002 | US6337266 Small electrode for chalcogenide memories |
| 12/27/2001 | US20010055874 Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
| 12/18/2001 | US6331454 Atomic-level electronic network and method of fabrication |
| 12/11/2001 | US6329666 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same |
| 12/06/2001 | US20010049189 Current density to control the crystalline state of the chalcogenide is contained within a small pore formed by by first creating a small opening in a dielectric material deposited onto a lower electrode; semiconductors |
| 12/05/2001 | EP1159743A1 Programmable microelectronic devices and methods of forming and programming same |
| 11/29/2001 | US20010046749 Method for making a diode device |
| 11/14/2001 | EP1153434A1 Microelectronic device for storing information and method thereof |
| 11/14/2001 | EP0636922B1 Non-linear resistance element, method of its manufacture, and liquid crystal display |
| 11/13/2001 | US6316784 Method of making chalcogenide memory device |
| 11/07/2001 | EP1151477A2 Quantum-size electronic devices and operating conditions thereof |
| 11/01/2001 | WO2000048196A9 Programmable microelectronic devices and methods of forming and programming same |
| 10/25/2001 | US20010034078 Reduced mask chalcogenide memory |
| 10/09/2001 | US6300684 Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
| 09/25/2001 | US6295225 Magnetic tunnel junction device having an intermediate layer |
| 09/25/2001 | US6294452 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same |
| 09/20/2001 | US20010023119 Electrical and thermal contact for use in semiconductor devices |
| 09/11/2001 | US6287919 Integrated circuit memory cell having a small active area and method of forming same |
| 09/11/2001 | US6287887 Method for fabricating a small area of contact between electrodes |
| 09/04/2001 | US6285419 Two-terminal metal/insulating material/metal (MIM) device, method for manufacturing the same and liquid crystal display panel |
| 09/04/2001 | US6284643 Electrical and thermal contact for use in semiconductor devices |
| 07/17/2001 | CA2052881C Vertically interconnected parallel distributed processor |
| 07/10/2001 | US6259116 Multiple memory element semiconductor memory devices |
| 07/03/2001 | USRE37259 Multibit single cell memory element having tapered contact |
| 06/28/2001 | WO2001047042A1 Method for stabilizing a tunnel junction component and a stabilized tunnel junction component |
| 06/28/2001 | CA2394116A1 Method for stabilizing a tunnel junction component and a stabilized tunnel junction component |
| 06/26/2001 | US6252244 Memory cell having a reduced active area and a memory array incorporating the same |
| 06/21/2001 | WO2000015882A9 Method for switching the properties of perovskite materials |
| 06/13/2001 | EP1107330A2 Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins |
| 05/31/2001 | US20010002046 Small electrode for a chalcogenide switching device and method for fabricating same |
| 05/30/2001 | EP1103079A1 Magnetic tunnel junction device having an intermediate layer |
| 05/16/2001 | CN1295722A X-Y addressable electric microswitch arrays and sensor matrices employing them |
| 05/09/2001 | EP1044452A4 Programmable sub-surface aggregating metallization structure and method of making same |
| 05/02/2001 | EP1096578A2 Solid-state excimer devices and processes for producing same |
| 05/01/2001 | US6225142 Memory cell having a reduced active area and a memory array incorporating the same |
| 04/04/2001 | EP1087867A1 Memory element with memory material comprising phase-change material and dielectric material |
| 03/20/2001 | US6204139 Method for switching the properties of perovskite materials used in thin film resistors |
| 03/06/2001 | US6198113 Electrostatically operated tunneling transistor |
| 02/27/2001 | US6194737 Phase-locked circuit device using a single-electron tunneling junction element and method of fabricating the same |
| 02/20/2001 | US6189582 Small electrode for a chalcogenide switching device and method for fabricating same |
| 02/14/2001 | CN1284199A Programmable sub-surface aggregating metallization structure and method of making same |
| 01/03/2001 | EP1065736A2 A method for fabricating a small area of contact between electrodes |
| 12/28/2000 | WO2000079539A1 Method of programming phase-change memory element |
| 12/05/2000 | US6157422 Two-terminal nonlinear element having insulating films of different thickness formed on the flat top surface of a lower electrode |
| 11/23/2000 | WO2000070689A1 Magnetic tunnel junction device having an intermediate layer |
| 11/21/2000 | US6150253 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same |
| 11/15/2000 | EP1051762A1 X-y addressable electric microswitch arrays and sensor matrices employing them |
| 11/14/2000 | US6147395 Method for fabricating a small area of contact between electrodes |
| 11/09/2000 | WO2000041247A3 Quantum-size electronic devices and operating conditions thereof |
| 11/08/2000 | CN1272964A Thin-film two-terminal elements, method of production thereof, and liquid crystal display |
| 11/02/2000 | WO2000065669A1 Electrostatically controlled tunneling transistor |
| 10/26/2000 | WO2000063981A1 Metal-insulator-metal diodes and methods of manufacture |
| 10/18/2000 | EP1044452A2 Programmable sub-surface aggregating metallization structure and method of making same |
| 09/28/2000 | WO2000057498A1 Electrically programmable memory element with improved contacts |
| 09/28/2000 | CA2367365A1 Electrically programmable memory element with improved contacts |
| 09/21/2000 | WO2000054982A1 Information recording medium and method for manufacturing the same |
| 09/12/2000 | US6117720 Method of making an integrated circuit electrode having a reduced contact area |
| 09/05/2000 | US6114713 Integrated circuit memory cell having a small active area and method of forming same |
| 08/29/2000 | US6111264 Small pores defined by a disposable internal spacer for use in chalcogenide memories |
| 08/24/2000 | WO2000049659A1 Microelectronic device for storing information and method thereof |
| 08/17/2000 | WO2000048196A1 Programmable microelectronic devices and methods of forming and programming same |
| 08/17/2000 | CA2362283A1 Programmable microelectronic devices and methods of forming and programming same |
| 08/15/2000 | US6104038 Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
| 08/10/2000 | WO1997048032A8 Programmable metallization cell and method of making |
| 08/08/2000 | US6100951 Thin-film switching elements for electronic devices and a method of manufacturing the same |
| 07/26/2000 | EP0888618A4 Second-layer phase change memory array on top of a logic device |
| 07/26/2000 | EP0846343A4 Electrically erasable memory elements characterized by reduced current and improved thermal stability |
| 07/13/2000 | WO2000041247A2 Quantum-size electronic devices and operating conditions thereof |
| 07/13/2000 | WO2000041245A1 Quantum-size electronic devices and methods of operating thereof |
| 07/13/2000 | WO2000015882A3 Method for switching the properties of perovskite materials |
| 07/12/2000 | EP1018772A1 Thin-film two-terminal elements, method of production thereof, and liquid crystal display |
| 07/11/2000 | US6087689 Memory cell having a reduced active area and a memory array incorporating the same |
| 07/11/2000 | US6087674 Memory element with memory material comprising phase-change material and dielectric material |
| 07/04/2000 | US6084796 Programmable metallization cell structure and method of making same |
| 06/13/2000 | US6075719 Method of programming phase-change memory element |
| 06/07/2000 | CN1255753A Temp sensor (F element) with analog, binary and frequency outputs |
| 06/06/2000 | US6072716 Memory structures and methods of making same |
| 04/26/2000 | EP0995600A2 Ink jet recording head, ink jet apparatus provided with the same, and ink jet recording method |