| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 08/31/2004 | US6784018 Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
| 08/26/2004 | WO2004055915A3 Vertical elevated pore phase change memory |
| 08/26/2004 | WO2004034482A3 Electric device comprising phase change material |
| 08/26/2004 | US20040165422 Phase changeable memory devices and methods for fabricating the same |
| 08/26/2004 | US20040164290 Phase-change memory devices with a self-heater structure |
| 08/24/2004 | US6781145 Controlable ovonic phase-change semiconductor memory device |
| 08/24/2004 | US6780684 Stabilized tunnel junction component |
| 08/19/2004 | US20040161895 Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
| 08/19/2004 | US20040161894 Non-volatile resistance variable devices and method of forming same, analog memory devices and method of forming same, programmable memory cell and method of forming same, and method of structurally changing a non-volatile device |
| 08/19/2004 | US20040161874 Method of forming a non-volatile resistance variable device, and non-volatile resistance variable device |
| 08/19/2004 | US20040160812 2-Terminal trapped charge memory device with voltage switchable multi-level resistance |
| 08/19/2004 | US20040160804 Memory array of a non-volatile ram |
| 08/19/2004 | US20040160801 Active programming and operation of a memory device |
| 08/19/2004 | US20040159835 Memory device |
| 08/18/2004 | EP1446832A2 Electrode structure for use in an integrated circuit |
| 08/18/2004 | EP0763861B1 Nonlinear mim device, production thereof and liquid crystal display device |
| 08/17/2004 | US6777705 X-point memory cell |
| 08/12/2004 | WO2004055916A3 Phase change memory and manufacturing method therefor |
| 08/12/2004 | US20040157417 Methods to form a memory cell with metal-rich metal chalcogenide |
| 08/12/2004 | US20040157416 Method of forming a non-volatile resistance variable device, and non-volatile resistance variable device |
| 08/12/2004 | DE10297198T5 Kohlenstoff enthaltende Zwischenschicht für einen Phasenübergangsspeicher Carbon-containing intermediate layer for a phase-change memory |
| 08/11/2004 | EP0791229B1 Atomic chain circuit network and method |
| 08/10/2004 | US6774388 Modified contact for programmable devices |
| 08/10/2004 | US6774387 Programmable resistance memory element |
| 08/10/2004 | US6774054 High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application |
| 08/10/2004 | US6774003 Method for making a diode device |
| 08/05/2004 | WO2004066386A1 Electron device , integrated electron device using same, and operating method using same |
| 08/05/2004 | US20040149980 Method and apparatus for resistance variable material cells |
| 08/03/2004 | US6770531 Adhesive material for programmable device |
| 07/29/2004 | US20040147062 Filling plugs through chemical mechanical polish |
| 07/29/2004 | US20040144973 Agglomeration elimination for metal sputter deposition of chalcogenides |
| 07/29/2004 | US20040144968 Agglomeration elimination for metal sputter deposition of chalcogenides |
| 07/28/2004 | EP1440485A2 Programmable surface control devices and method of making same |
| 07/28/2004 | CN1516917A Electron tunneling device |
| 07/22/2004 | WO2004032147B1 Nanoparticles used as a charge carrier sink in resistive storage elements |
| 07/22/2004 | US20040140523 Programmable resistance memory element with indirect heating |
| 07/21/2004 | EP1439583A1 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof |
| 07/20/2004 | US6765249 Thin-film transistors formed on a flexible substrate |
| 07/20/2004 | US6764897 Method of making programmable resistance memory element |
| 07/20/2004 | US6764894 Elevated pore phase-change memory |
| 07/15/2004 | DE10339070A1 Lateraler Phasenwechsel-Speicher und Herstellungsverfahren Lateral phase change memory and manufacturing processes |
| 07/15/2004 | DE10339061A1 Phasenwechsel-Speicher und Herstellungsverfahren Phase change memory and manufacturing method |
| 07/15/2004 | DE10256486A1 Verfahren zum Herstellen einer Speicherzelle, Speicherzelle und Speicherzellen-Anordnung A method for fabricating a memory cell, memory cell and memory cell arrangement |
| 07/14/2004 | EP1437722A2 Information recording medium and method for producing the same |
| 07/13/2004 | US6762481 Electrically programmable nonvolatile variable capacitor |
| 07/13/2004 | US6762071 Method for fabricating a metal-oxide electron tunneling device for solar energy conversion |
| 07/13/2004 | US6761950 Dielectric layers of a combination of zirconia and zinc sulfide on both sides of the recording layer with no interface layer; adhesion; optical and electrical recording; good overwrite cyclability and recording sensitivity |
| 07/08/2004 | WO2004057684A1 Electric device comprising phase change material |
| 07/08/2004 | WO2004057676A2 Electric device with phase change material and parallel heater |
| 07/08/2004 | WO2004057618A2 Electric device comprising a layer of phase change material and method of manufacturing the same |
| 07/07/2004 | CN1510162A Method for depositing metal oxide thin film by MOCVD |
| 07/06/2004 | US6759249 Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory |
| 07/06/2004 | US6757971 Depositing malleable conductive layer over dielectric having openings using alumina slurry |
| 07/01/2004 | WO2004055916A2 Phase change memory and manufacturing method therefor |
| 07/01/2004 | WO2004055915A2 Vertical elevated pore phase change memory |
| 07/01/2004 | WO2004055827A1 Method and system to store information |
| 07/01/2004 | WO2004055825A1 Forming phase change memories |
| 07/01/2004 | WO2003079463A3 Programmable structure, an array including the structure, and methods of forming the same |
| 07/01/2004 | US20040126925 Method for manufacturing sidewall contacts for a chalcogenide memory device |
| 07/01/2004 | US20040124503 Memory elements and methods for making same |
| 07/01/2004 | US20040124406 Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device |
| 06/30/2004 | EP1434232A1 Memory cell |
| 06/30/2004 | EP1433874A2 Method for metal oxide thin film deposition via MOCVD |
| 06/29/2004 | US6756649 High speed electron tunneling device and applications |
| 06/24/2004 | US20040121074 Method for metal oxide thin film deposition via MOCVD |
| 06/23/2004 | EP1430548A2 Manufacturing of non-volatile resistance variable devices and programmable memory cells |
| 06/23/2004 | CN1507088A Horizontal phase change memory and producing method thereof |
| 06/23/2004 | CN1506973A Phase change memory and producing method thereof |
| 06/17/2004 | WO2004051763A2 Method for the production of a memory cell, memory cell and memory cell arrangement |
| 06/17/2004 | US20040115945 Using an electron beam to write phase change memory devices |
| 06/17/2004 | US20040115938 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring |
| 06/17/2004 | US20040115372 Vertical elevated pore phase change memory |
| 06/17/2004 | US20040114429 Nonvolatile memory device |
| 06/17/2004 | US20040114419 Method and system to store information |
| 06/17/2004 | US20040114317 Forming phase change memories |
| 06/17/2004 | US20040113232 Phase change memory |
| 06/17/2004 | US20040113192 Phase change memory and method therefor |
| 06/17/2004 | US20040113181 Lateral phase change memory and method therefor |
| 06/17/2004 | US20040113136 Electrodes, dielectrics, adhesive ; mutlilayer |
| 06/17/2004 | US20040113135 Shunted phase change memory |
| 06/17/2004 | DE10255117A1 Halbleiterspeichereinrichtung sowie Verfahren zu deren Herstellung A semiconductor memory device, as well as processes for their preparation |
| 06/15/2004 | US6750101 Method of manufacturing self-aligned, programmable phase change memory |
| 06/15/2004 | US6750079 Method for making programmable resistance memory element |
| 06/10/2004 | WO2004049440A2 Semiconductor memory device and method for the production thereof |
| 06/10/2004 | US20040110094 Forming the interconnect layer using a material having a first electrical conductivity corresponding to a first state and a second electrical conductivity corresponding to a second state; selecting an area ; applying energy |
| 06/10/2004 | US20040109351 Non-volatile memory and fabrication method thereof |
| 06/09/2004 | EP1426972A2 Nonvolatile memory device |
| 06/09/2004 | EP1425431A2 Integrated circuit device and fabrication using metal-doped chalcogenide materials |
| 06/08/2004 | US6747286 Pore structure for programmable device |
| 06/08/2004 | US6746892 Low heat loss and small contact area composite electrode for a phase change media memory device |
| 06/01/2004 | US6744088 Phase change memory device on a planar composite layer |
| 05/27/2004 | WO2004017436A3 Non-volatile memory element and production method thereof and storage memory arrangement |
| 05/26/2004 | CN1499522A Non-volatile variohm, memory element, and its scaling method |
| 05/25/2004 | US6740921 Semiconductor memory cell and method of forming same |
| 05/20/2004 | US20040098434 Methods of programming digital multistate phase change materials |
| 05/19/2004 | DE10351017A1 Phase changeable memory cell includes top electrode whose tip extends towards vertical portion of bottom electrode, and phase changeable memory layer pattern between top and bottom electrodes |
| 05/18/2004 | US6737726 Resistance variable device, analog memory device, and programmable memory cell |
| 05/13/2004 | US20040090815 Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor |
| 05/13/2004 | US20040089882 Electronic device having controllable conductance |
| 05/12/2004 | EP1418623A2 Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor |