Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
12/2003
12/16/2003US6664562 Device integrated antenna for use in resonant and non-resonant modes and method
12/16/2003US6664117 Method for resistance memory metal oxide thin film deposition
12/11/2003WO2003102756A2 Molecular-scale computational circuits based on charge-density-wave phenomena and methods related thereto
12/11/2003US20030228771 Elimination of dendrite formation during metal/chalcogenide glass deposition
12/11/2003US20030228717 Co-sputter deposition of metal-doped chalcogenides
12/10/2003EP1369925A2 A phase change material electronic memory structure
12/10/2003EP1369501A2 Preparation of LCPMO thin films which have reversible resistance change properties
12/10/2003CN1461043A Preparation of LCPMO film having reversible resistance change property
12/09/2003US6660136 Chalcogenide material over a semiconductor substrate
12/04/2003WO2003065456A3 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures
11/2003
11/27/2003US20030219924 Small area contact region, high efficiency phase change memory cell and fabrication method thereof
11/27/2003US20030219534 Preparation of LCPMO thin films which have reversible resistance change properties
11/26/2003EP0968536B1 Semiconductor memory devices
11/25/2003US6653733 Conductors in semiconductor devices
11/25/2003US6653193 Resistance variable device
11/20/2003WO2003096177A1 Methods of computing with digital multistate phase change materials
11/20/2003WO2003052815A3 Electrode structure for use in an integrated circuit
11/20/2003WO2003032392A3 Programmable microelectronic device, structure, and system, and method of forming the same
11/20/2003US20030215978 Method for making tapered opening for programmable resistance memory element
11/20/2003US20030214857 Phase-change recording material used for information recording medium and information recording medium employing it
11/20/2003US20030214856 Contact structure, phase change memory cell, and manufacturing method thereof with elimination of double contacts
11/19/2003CN1457058A Phase change material electronic memory structure and forming method thereof
11/18/2003US6649957 Thin film polycrystalline memory structure
11/13/2003WO2003094227A1 Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device
11/13/2003WO2003021693A3 Elevated pore phase-change memory
11/13/2003US20030212725 Methods of factoring and modular arithmetic
11/13/2003US20030212724 Methods of computing with digital multistate phase change materials
11/13/2003US20030211732 High-resistivity metal in a phase-change memory cell
11/13/2003US20030210564 Tunable cantilever apparatus and method for making same
11/13/2003US20030209971 Programmable structure, an array including the structure, and methods of forming the same
11/13/2003US20030209746 Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retention and methods of forming same
11/13/2003US20030209728 Microelectronic programmable device and methods of forming and programming the same
11/06/2003WO2003036735A3 Programmable surface control devices and method of making same
11/06/2003WO2002097863A3 Method for manufacturing contacts for a chalcogenide memory device
11/06/2003US20030205809 Barrier material encapsulation of programmable material
11/06/2003US20030205720 High-resistivity metal in a phase-change memory cell
11/04/2003US6642102 Barrier material encapsulation of programmable material
11/04/2003US6642092 Thin-film transistors formed on a metal foil substrate
10/2003
10/30/2003US20030201469 Phase change material memory device
10/28/2003US6638820 Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
10/23/2003WO2003088250A2 Method of manufacture of programmable conductor memory
10/22/2003EP1355365A2 Electrode for phase change memory device
10/21/2003US6635951 Small electrode for chalcogenide memories
10/21/2003US6635914 Microelectronic programmable device and methods of forming and programming the same
10/16/2003WO2003085740A1 Non-volatile memory and manufacturing method thereof
10/16/2003WO2003085675A2 Phase-change memory device
10/16/2003WO2003067633A3 Programmable resistance memory element and method for making same
10/16/2003WO2002095832A3 Applications for and tunneling device
10/16/2003US20030194865 Method of manufacture of programmable conductor memory
10/16/2003US20030193063 Metal structure for a phase-change memory device
10/16/2003US20030193059 Programmable conductor memory cell structure and method therefor
10/15/2003CN1449062A Composite electrode having low heat consumption and small contact area for memory device of phase-changing medium
10/15/2003CN1449021A Self-aligned, programmable phase change memory and method for manufacturing the same
10/09/2003US20030190447 Information recording medium and method for producing the same
10/09/2003US20030189200 Low heat loss and small contact area composite electrode for a phase change media memory device
10/08/2003EP1351229A2 Information recording medium and method for producing the same
10/02/2003US20030186504 Integrated circuit device and fabrication using metal-doped chalcogenide materials
10/02/2003US20030186481 Self-aligned, programmable phase change memory
10/02/2003US20030183507 Method of forming a non-volatile resistance variable device and method of forming a metal layer comprising silver and tungsten
10/01/2003CN1445770A Information recording medium and its manufacturing method
09/2003
09/25/2003WO2003079463A2 Programmable structure, an array including the structure, and methods of forming the same
09/25/2003WO2003079443A2 Manufacturing methods for resistance variable material cells
09/25/2003US20030180969 Thin film polycrystalline memory structure
09/25/2003US20030179633 Memory device
09/25/2003US20030179117 Rewritable cycles; multilayer, recording and dielectrics overcoating substrate; phase change recording; radiation with light
09/24/2003CN1444282A Multi-crystal storage structure, method for forming said structure and semiconductor storage device using said structure
09/18/2003US20030176059 Small electrode for chalcogenide memories
09/18/2003US20030173558 Methods and apparatus for resistance variable material cells
09/17/2003EP1345259A2 Polycrystalline memory structure, method for forming same structure, and semiconductor memory device using same structure
09/17/2003EP1344223A1 Organic bistable device and organic memory cells
09/17/2003CN1442853A Phase change recording material for information recording medium and information recording medium using said material
09/11/2003US20030168675 Memory element and method for fabricating a memory element
09/11/2003US20030168651 Programmable surface control devices and method of making same
09/10/2003EP1343154A2 Phase-change recording material used for an information recording medium and an information recording medium employing it
09/09/2003US6617192 Electrically programmable memory element with multi-regioned contact
09/04/2003WO2003073428A1 Multiple data state memory cell
09/04/2003WO2003044878A3 Polymer material having carrier transport property, and organic thin film element, electronic device, and conductor line which use same
09/04/2003US20030164515 Carbon-containing interfacial layer for phase-change memory
09/02/2003US6614178 Solid-state excimer devices and processes for producing same
09/02/2003US6613604 Method for making small pore for use in programmable resistance memory element
08/2003
08/28/2003WO2003071614A2 Silver-selenide/chalcogenide glass stack for resistance variable memory
08/28/2003WO2003071531A1 Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
08/28/2003US20030161195 Integrated resistor, phase-change memory element including this resistor, and process for the fabrication thereof
08/27/2003EP1339111A1 Contact structure, phase change memory cell, and manufacturing method thereof with elimination of double contacts
08/27/2003EP1339110A1 Phase change memory cell and manufacturing method thereof using minitrenches
08/27/2003EP1339103A1 Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
08/21/2003WO2002091496A3 Reversible field-programmable electric interconnects
08/21/2003US20030156468 Resistance variable 'on' memory
08/21/2003US20030156452 Multiple data state memory cell
08/21/2003US20030156445 Method for resistance switch using short electric pulses
08/21/2003US20030155606 Method to alter chalcogenide glass for improved switching characteristics
08/21/2003US20030155589 Silver-selenide/chalcogenide glass stack for resistance variable memory
08/20/2003CN1437241A Variable electrical risistance device, producing method of variable resistance memory and memory
08/19/2003US6607974 Method of forming a contact structure in a semiconductor device
08/14/2003WO2003067633A2 Programmable resistance memory element and method for making same
08/14/2003US20030151041 Using selective deposition to form phase-change memory cells
08/13/2003EP1335417A2 Method for fabricating variable resistance device, method for fabricating non-volatile variable resistance memory device, and non-volatile variable resistance memory device
08/12/2003US6605821 Phase change material electronic memory structure and method for forming
08/07/2003WO2003065456A2 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures
08/07/2003US20030148546 Method for resistance memory metal oxide thin film deposition
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