Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
11/1996
11/13/1996EP0601068A4 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom.
10/1996
10/22/1996US5568289 Liquid crystal display device
10/03/1996WO1996030953A1 Nonlinear mim device, production thereof and liquid crystal display device
09/1996
09/12/1996WO1996019837A3 Semiconductor memory devices and methods of producing such
08/1996
08/01/1996WO1996023246A1 Nonlinear resistance element, process for preparing the same and liquid crystal display
07/1996
07/31/1996CN1127910A Two-terminal non-liner resistive device and a method for producing the same
07/30/1996US5541422 Tunnel diode with several permanent switching states
07/30/1996US5540977 Microelectronic component
07/16/1996US5536947 Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom
07/09/1996US5534712 Electrically erasable memory elements characterized by reduced current and improved thermal stability
07/09/1996US5534711 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
06/1996
06/27/1996WO1996019837A2 Semiconductor memory devices and methods of producing such
05/1996
05/30/1996WO1996016448A1 Seco process
05/21/1996US5518936 Forming metal layer on dielectric substrate, doping surface of metal, then oxidizing surface of metal yields new dielectric layer having greater surface resistance
05/17/1996WO1996014664A1 Atomic chain circuit network and method
04/1996
04/25/1996WO1996012308A1 Liquid crystal display with threshold switching device
01/1996
01/31/1996EP0694214A1 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
01/16/1996US5485294 Forming a two terminal conductor-nonlinear conductor-conductor active element for an electrical device
01/02/1996US5481491 Electroconductive oxide film between substrate and insulating oxide
10/1995
10/17/1995CA2058509C Switch with improved threshold voltage
10/04/1995CN1109639A Tunnel diode with several permanent switching states
08/1995
08/30/1995CN1029652C Threshold switching device
08/15/1995US5442224 Two-terminal mim device having stable non-linearity characteristics and a lower electrode of thin TA film doped with nitrogen
07/1995
07/26/1995EP0664569A1 Microelectronics device
07/11/1995US5432379 MIM-type electric device production thereof, and electronic apparatus employing the device
06/1995
06/27/1995CA2059476C Electrically erasable phase change memory
06/14/1995EP0657936A1 Tunnel diode with several permanent switching states
06/06/1995US5422982 Neural networks containing variable resistors as synapses
05/1995
05/30/1995US5420746 Single electron device including clusters of pure carbon atoms
05/09/1995US5414271 Electrically erasable memory elements having improved set resistance stability
05/09/1995US5413942 Monolithic electronic structures
04/1995
04/11/1995US5406509 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
03/1995
03/28/1995US5401981 Threshold switching device
03/23/1995DE4401442C1 Microelectronic component
02/1995
02/08/1995EP0472740B1 Electron device having a current channel of dielectric material
02/01/1995EP0636922A1 Non-linear resistance element, method of its manufacture, and liquid crystal display
12/1994
12/20/1994CA1333637C Method of driving device having mim structure
12/14/1994EP0629008A1 Structure of mim diode and method for its manufacture
12/14/1994EP0471737B1 Semiconductor device
11/1994
11/08/1994US5363329 Semiconductor memory device for use in an electrically alterable read-only memory
11/01/1994US5360981 Amorphous silicon memory
10/1994
10/27/1994WO1994024707A1 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
10/25/1994US5359205 Electrically erasable memory elements characterized by reduced current and improved thermal stability
10/25/1994US5359204 Switching device
09/1994
09/27/1994US5350930 Cluster compound microelectronic component
09/20/1994US5348773 Silicon dioxide film from hydrogen silsequioxane resin
08/1994
08/23/1994US5341328 Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life
08/18/1994WO1994018600A1 Non-linear resistance element, method of its manufacture, and liquid crystal display
08/16/1994US5339211 Variable capacitor
08/10/1994EP0610083A1 A display apparatus having a two-terminal device including a zinc sulfide layer and a method for producing the same
08/10/1994EP0610082A2 A two-terminal nonlinear device
08/02/1994US5335219 Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
07/1994
07/19/1994US5330630 Switch with improved threshold voltage
07/07/1994WO1994015370A1 Structure of mim diode and method for its manufacture
06/1994
06/16/1994DE4242367A1 Microelectronic component for e.g. high temp. superconductor - has energising occurring as excitation parameter with high frequency waves, esp. in light frequency range
06/15/1994EP0601692A1 Electronic device incorporating artificial super lattice
06/15/1994EP0601068A1 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
06/14/1994US5320703 Decomposition of gold complex to transfer gold in solution to supersaturated state and form crystalline film on substrate
06/07/1994US5319479 Deposited multi-layer device with a plastic substrate having an inorganic thin film layer
05/1994
05/31/1994US5316893 Method of producing electronic switching element
05/17/1994US5312684 Threshold switching device
03/1994
03/29/1994CA2051112C Semiconductor device
03/22/1994US5296835 Variable resistor and neuro device using the variable resistor for weighting
03/22/1994US5296716 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
03/15/1994US5294560 Forming a conductor/insulator/conductor by depositing a insulating electrolytic polymer film between electrodes
03/08/1994US5293335 Ceramic thin film memory device
03/01/1994US5291274 Electron device having a current channel of dielectric material
02/1994
02/22/1994US5289402 Recording medium, recording method, and readout method
02/01/1994US5283545 Variable resistors
01/1994
01/11/1994US5278636 Non-volatile, solid state bistable electrical switch
01/05/1994EP0577429A1 Liquid crystal display having non linear resistance elements
12/1993
12/28/1993US5274485 Liquid crystal display
12/14/1993US5270965 Method of driving device having metal-insulator-metal(mim)structure
11/1993
11/18/1993EP0570205A1 A method for producing metal wirings on an insulating substrate
11/17/1993CN1078574A Electrically erasable memory elements characterized by reduced current and improved thermal stability
11/02/1993US5258864 Method of fabricating MIM device arrays using a single exposure and lift-off process
10/1993
10/14/1993DE4212220A1 Microelectronic component used in electronic circuits - comprises body of cluster mols. connected to electrodes
10/12/1993US5253092 Lateral MIM device and method of production
09/1993
09/21/1993US5246468 Method of fabricating a lateral metal-insulator-metal device compatible with liquid crystal displays
08/1993
08/17/1993US5236573 Mim devices, their method of fabrication and display devices incorporating such devices
08/10/1993US5234541 Patterning structure of insulating and conductive layers to form electrodes, address conductors, bridging portion, removing part of conductor layer at bridging portion to form connecting metal-insulator-metal device
05/1993
05/25/1993US5214416 Active matrix board
03/1993
03/04/1993WO1993004506A1 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
02/1993
02/23/1993US5188977 Method for manufacturing an electrically conductive tip composed of a doped semiconductor material
02/17/1993EP0527342A1 Differential capacitor structure and fabricating method
02/09/1993CA1313569C Electrical switching device
02/04/1993WO1993002480A1 Improved thin-film structure for chalcogenide electrical switching devices and process therefor
01/1993
01/06/1993CN1067765A Threshold switching device
01/05/1993US5177567 Thin-film structure for chalcogenide electrical switching devices and process therefor
12/1992
12/29/1992US5175114 Method for production of a bidirectional nonlinear resistor, active matrix liquid crystal panel using bidirectional nonlinear resistor
11/1992
11/24/1992US5166758 Electrically erasable phase change memory
11/19/1992EP0513911A1 Method of fabricating mim type device arrays and display devices incorporating such arrays
11/19/1992EP0513693A1 Process for forming gold crystal film
11/17/1992US5164850 Liquid crystal device including tantalum nitride with specific nitriding ratio
11/11/1992EP0512717A2 Threshold switching device with negative differential resistance
11/03/1992CA2067413A1 Threshold switching device
10/1992
10/27/1992US5159661 Vertically interconnected parallel distributed processor
10/14/1992EP0508802A1 Ferroelectric film of fluoroolefin copolymer and method of forming same
10/06/1992US5153753 Active matrix-type liquid crystal display containing a horizontal MIM device with inter-digital conductors
10/06/1992US5152805 M-I-M' device and fabrication method
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