| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
|---|
| 11/18/2004 | US20040228164 Programmable conductor memory cell structure and method therefor |
| 11/17/2004 | EP1476909A2 Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 11/17/2004 | EP1476876A1 Multiple data state memory cell |
| 11/17/2004 | EP0938731B1 Memory element with energy control mechanism |
| 11/17/2004 | CN1547268A Method for the manufacture of nanometer magnitude unit device in phase-change storage |
| 11/16/2004 | US6818481 Method to manufacture a buried electrode PCRAM cell |
| 11/11/2004 | WO2004096567A1 Phase-change recording material and information recording medium |
| 11/11/2004 | WO2004057618A3 Electric device comprising a layer of phase change material and method of manufacturing the same |
| 11/11/2004 | US20040223390 Resistance variable memory element having chalcogenide glass for improved switching characteristics |
| 11/11/2004 | US20040223357 Multiple data state memory cell |
| 11/11/2004 | US20040222445 Modified contact for programmable devices |
| 11/11/2004 | US20040221450 Filling plugs through chemical mechanical polish |
| 11/10/2004 | EP1475848A1 Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells |
| 11/10/2004 | EP1475840A1 Process for manufacturing a memory device having selector transistors for storage elements and memory device fabricated thereby |
| 11/10/2004 | CN1545152A Method for preparing phase-changing film material nanometer wire |
| 11/10/2004 | CN1175423C Programmable microelectronic device and methods of forming and programming same |
| 11/09/2004 | US6815818 Having improved adhesion between layers of electroconductive materials during chemical mechanical polishing |
| 11/09/2004 | US6815744 Microelectronic device for storing information with switchable ohmic resistance |
| 11/09/2004 | US6815705 Electrically programmable memory element with raised pore |
| 11/09/2004 | US6815704 Phase change memory device employing thermally insulating voids |
| 11/09/2004 | US6815286 Memory device |
| 11/09/2004 | US6815266 Method for manufacturing sidewall contacts for a chalcogenide memory device |
| 11/03/2004 | CN1543652A Memory cell |
| 11/02/2004 | US6813178 Chalcogenide glass constant current device, and its method of fabrication and operation |
| 11/02/2004 | US6813177 Method and system to store information |
| 11/02/2004 | US6812087 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures |
| 10/28/2004 | US20040211957 Method and apparatus for controlling metal doping of a chalcogenide memory element |
| 10/28/2004 | US20040211953 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof |
| 10/27/2004 | EP1470589A2 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures |
| 10/26/2004 | US6809401 Memory, writing apparatus, reading apparatus, writing method, and reading method |
| 10/26/2004 | US6809362 Multiple data state memory cell |
| 10/21/2004 | US20040209478 Forming tapered lower electrode phase-change memories |
| 10/21/2004 | US20040208038 Phase change-type memory element and process for producing the same |
| 10/21/2004 | DE102004016408A1 Phasenwechselspeicherbaustein und zugehöriges Programmierverfahren Phase change memory device and associated programming method |
| 10/20/2004 | EP1469532A1 Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured |
| 10/20/2004 | CN1538540A Phase change merhory and method with recovery function |
| 10/20/2004 | CN1538424A Information recording medium and its generating method |
| 10/19/2004 | US6807079 Device having a state dependent upon the state of particles dispersed in a carrier |
| 10/14/2004 | US20040203183 Phase change memory element capable of low power operation and method of fabricating the same |
| 10/14/2004 | US20040202033 Elevated pore phase-change memory |
| 10/14/2004 | US20040202017 Low-current and high-speed phase-change memory devices and methods of driving the same |
| 10/14/2004 | US20040202016 Differential negative resistance memory |
| 10/13/2004 | CN1536688A Low current and high speed phase change storage device and method for driving it |
| 10/07/2004 | WO2004086459A2 Method for making tapered opening for programmable resistance memory element |
| 10/07/2004 | WO2004085168A1 Phase variation recording material and information recording medium |
| 10/07/2004 | WO2004085167A1 Information recording medium and method for manufacturing same |
| 10/07/2004 | WO2004049440A3 Semiconductor memory device and method for the production thereof |
| 10/07/2004 | US20040197976 Method for manufacturing sidewall contacts for a chalcogenide memory device |
| 10/07/2004 | US20040197947 Memory-cell filament electrodes and methods |
| 10/07/2004 | US20040195604 Phase-change memory devices and methods for forming the same |
| 10/05/2004 | US6800563 Forming tapered lower electrode phase-change memories |
| 10/05/2004 | US6800504 Integrated circuit device and fabrication using metal-doped chalcogenide materials |
| 09/30/2004 | WO2004084306A1 Memory element and storage device using this |
| 09/30/2004 | WO2004051763A3 Method for the production of a memory cell, memory cell and memory cell arrangement |
| 09/30/2004 | US20040192006 Layered resistance variable memory device and method of fabrication |
| 09/30/2004 | US20040191961 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry |
| 09/30/2004 | US20040191683 Information recording medium and method for manufacturing the same |
| 09/30/2004 | US20040188735 Phase change storage cells for memory devices, memory devices having phase change storage cells and methods of forming the same |
| 09/30/2004 | US20040188668 Thermal memory cell and memory device including the thermal memory cell |
| 09/30/2004 | DE10310573A1 Nicht-flüchtige, integrierte Speicherzelle und Verfahren zum Einschreiben oder Auslesen einer Information in die / aus der Speicherzelle Non-volatile, integrated memory cell and method of writing or reading an information to / from the memory cell |
| 09/29/2004 | EP1463061A2 Memory device |
| 09/29/2004 | EP1463043A1 Information recording medium and method for manufacturing the same |
| 09/29/2004 | CN1533574A 半导体存储装置 The semiconductor memory device |
| 09/28/2004 | US6798692 Programmable sub-surface aggregating metallization structure and method of making same |
| 09/28/2004 | US6797979 Metal structure for a phase-change memory device |
| 09/28/2004 | US6797978 Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
| 09/28/2004 | US6797612 Method of fabricating a small electrode for chalcogenide memory cells |
| 09/23/2004 | WO2004081977A2 Multi-terminal chalcogenide switching devices |
| 09/23/2004 | WO2004081944A1 Non-volatile, integrated memory cell, and method for writing or reading information into/out of the memory cell |
| 09/23/2004 | WO2004081617A2 Chalcogenide glass constant current device, and its method of fabrication and operation |
| 09/23/2004 | US20040185625 Graded GexSe100-x concentration in PCRAM |
| 09/23/2004 | US20040183107 Phase changable memory device structures and related methods |
| 09/23/2004 | CA2518246A1 Multi-terminal chalcogenide switching devices |
| 09/22/2004 | CN1531017A PCMO thin-membrane low-temperature treatment on Ir base-material for RRAM application |
| 09/22/2004 | CN1168156C Electrostatically controlled tunneling transistor |
| 09/16/2004 | US20040180542 Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits |
| 09/16/2004 | US20040180533 Method for filling via with metal |
| 09/16/2004 | US20040180530 Method for filling via with metal |
| 09/16/2004 | US20040180507 Low temperature processing of PCMO thin film on Ir substrate for RRAM application |
| 09/16/2004 | US20040180481 Thin-film transistors on a flexible substrate |
| 09/16/2004 | US20040180144 depositing a complex metal oxide (CMO) memory material on an electrode, the CMO memory material having a structure of either amorphous or small grain polycrystalline; and annealing the CMO memory material using a laser |
| 09/16/2004 | US20040179390 Chalcogenide glass constant current device, and its method of fabrication and operation |
| 09/16/2004 | US20040179388 Semiconductor memory cell and method of forming same |
| 09/16/2004 | US20040178404 Multiple bit chalcogenide storage device |
| 09/16/2004 | US20040178403 Field effect chalcogenide devices |
| 09/16/2004 | US20040178402 Multi-terminal device having logic functional |
| 09/16/2004 | US20040178401 Multi-terminal chalcogenide switching devices |
| 09/15/2004 | EP1458026A2 Low temperature processing of PCMO thin film on ir substrate for rram application |
| 09/15/2004 | EP1456851A1 A programmable conductor random access memory and a method for writing thereto |
| 09/14/2004 | US6791859 Complementary bit PCRAM sense amplifier and method of operation |
| 09/14/2004 | US6791102 Phase change memory |
| 09/09/2004 | US20040175859 Single polarity programming of a PCRAM structure |
| 09/09/2004 | US20040175857 Method for making programmable resistance memory element |
| 09/09/2004 | US20040174728 Semiconductor memory device |
| 09/08/2004 | EP1454325A2 Complementary bit pcram sense amplifier and method of operation |
| 09/08/2004 | CN1527299A Information recording medium and producing method thereof |
| 09/07/2004 | US6787390 Electrical and thermal contact for use in semiconductor devices |
| 09/02/2004 | WO2004057676A3 Electric device with phase change material and parallel heater |
| 09/02/2004 | US20040171208 Method of manufacture of programmable conductor memory |
| 09/02/2004 | DE10297115T5 Mehrlagiger Phasenübergangsspeicher Multi-layered phase-change memory |