| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 07/27/2006 | US20060163554 Electric device comprising phase change material |
| 07/26/2006 | EP1683157A1 Phase change memory element with improved cyclability |
| 07/26/2006 | CN1808736A Phase changeable memory cells and methods of forming the same |
| 07/26/2006 | CN1808735A Phase-change storage and its manufacturing method |
| 07/26/2006 | CN1808706A Preparation method of nanometer heating electrode of phase-change storage |
| 07/25/2006 | US7081289 Storage stability of recording signals; repeated recording durability |
| 07/20/2006 | WO2006075574A1 Resistance change element and manufacturing method thereof |
| 07/20/2006 | WO2006029228A3 Memory using mixed valence conductive oxides |
| 07/20/2006 | US20060157802 Electric device using sold electrolyte |
| 07/20/2006 | US20060157681 Horizontal chalcogenide element defined by a pad for use in solid-state memories |
| 07/19/2006 | EP1681732A2 Storage device and method for its manufacture |
| 07/19/2006 | CN1805167A Phase change type multi-digit quasi-memory cell and its operating method |
| 07/18/2006 | US7078273 Semiconductor memory cell and method of forming same |
| 07/13/2006 | WO2006072842A1 Dielectric antifuse for electro-thermally programmable device |
| 07/13/2006 | US20060154467 Method for the production of a memory cell, memory cell and memory cell arrangement |
| 07/13/2006 | US20060154432 Variable resistance functional body and its manufacturing method |
| 07/12/2006 | CN1801501A Method for preparing phase-change memory device unit using chalcogenide compound nanometer material |
| 07/06/2006 | WO2006069933A1 Phase change memory and manufacturing method thereof |
| 07/06/2006 | US20060148248 Electrode structures and method to form electrode structures that minimize electrode work function variation |
| 07/06/2006 | US20060148135 Semiconductor memory cell and method of forming same |
| 07/06/2006 | US20060148125 Phase changable memory device structures |
| 07/06/2006 | US20060145134 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation |
| 07/05/2006 | EP1677372A1 Phase change memory and manufacturing method thereof |
| 07/05/2006 | EP1677371A1 Dual resistance heater for phase change devices and manufacturing method thereof |
| 07/05/2006 | EP1677357A1 Phase change memory device having an adhesion layer and manufacturing process thereof |
| 07/05/2006 | EP1676934A1 Chemical vapor deposition chamber for depositing titanium silicon nitride films for forming phase change memories |
| 07/05/2006 | CN1262683C Method for depositing metal oxide thin film by MOCVD |
| 07/04/2006 | US7071021 PCRAM memory cell and method of making same |
| 06/29/2006 | US20060141202 Information recording medium and manufacturing method thereof |
| 06/29/2006 | US20060139981 Electron device, integrated electron device using same, and operating method using same |
| 06/28/2006 | EP1675194A2 GE precursor, GST thin layer, phase-change memory device |
| 06/27/2006 | US7067865 High density chalcogenide memory cells |
| 06/27/2006 | US7067837 Phase-change memory devices |
| 06/27/2006 | US7067348 Method of forming a programmable memory cell and chalcogenide structure |
| 06/22/2006 | US20060131618 Chalcogenide random access memory and method of fabricating the same |
| 06/21/2006 | EP1440485B1 Programmable surface control devices and method of using same |
| 06/21/2006 | EP0947005A4 Composite memory material comprising a mixture of phase-change memory material and dielectric material |
| 06/21/2006 | CN1790726A Nonvolatile memory device including one resistor and one diode |
| 06/21/2006 | CN1260734C Programmable sub-surface aggregating metallization device and method of making same |
| 06/20/2006 | US7064344 Barrier material encapsulation of programmable material |
| 06/20/2006 | US7063984 pair of targets spaced apart from one another within a closed vacuum vessel, each having a sputtering surface facing the sputtering surface of the other target; and substrate holder to receive facing target sputtering a CMO on an electrode. |
| 06/20/2006 | US7063876 Information recording medium and method for manufacturing the same |
| 06/14/2006 | DE112004000060T5 Schaltelement, Verfahren zum Ansteuern des Schaltelements, überschreibbare integrierte Logikschaltung und Speicherelement Switching element, method of driving the switching element, rewritable logic integrated circuit memory element, and |
| 06/14/2006 | CN1787249A Sulfur compound random access internal memory and mfg. method thereof |
| 06/14/2006 | CN1787224A Memory cell mfg.method,memory cell and phase-change memory cell |
| 06/13/2006 | US7061071 Non-volatile resistance variable devices and method of forming same, analog memory devices and method of forming same, programmable memory cell and method of forming same, and method of structurally changing a non-volatile device |
| 06/13/2006 | US7061013 Phase change storage cells for memory devices, memory devices having phase change storage cells and methods of forming the same |
| 06/13/2006 | US7061004 Resistance variable memory elements and methods of formation |
| 06/13/2006 | US7060586 PCMO thin film with resistance random access memory (RRAM) characteristics |
| 06/08/2006 | US20060118911 Programmable resistance memory element with threshold switching material |
| 06/08/2006 | US20060118848 Microelectronic programmable device and methods of forming and programming the same |
| 06/08/2006 | US20060118774 Multiple bit chalcogenide storage device |
| 06/08/2006 | US20060118423 Tunable cantilever apparatus and method for making same |
| 06/08/2006 | DE102004022604B4 Sublithographic contact structure is formed by producing primary and secondary contacts and providing sublithographic dimensions by chemical reaction |
| 06/08/2006 | DE10156470B4 RF-ID-Etikett mit einer Halbleiteranordnung mit Transistoren auf Basis organischer Halbleiter und nichtflüchtiger Schreib-Lese-Speicherzellen RF-ID tag having a semiconductor arrangement with transistors based on organic semiconductors, and non-volatile write-read memory cells |
| 06/07/2006 | EP1667244A2 Phase change memory device having phase change material layer containing phase change nano particles and method of fabricating the same |
| 06/07/2006 | EP1667230A1 Phase-change film for semiconductor non-volatile memory and sputtering target for forming such phase-change film |
| 06/07/2006 | EP1665404A2 Multiple bit chalcogenide storage device |
| 06/07/2006 | CN1784642A Chalcogenide glass constant current device,and its method of fabrication and operation |
| 06/07/2006 | CN1783507A 记忆胞结构 Memory cell structure |
| 06/06/2006 | US7057923 Field emission phase change diode memory |
| 06/06/2006 | US7057202 Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof |
| 06/06/2006 | US7056762 Methods to form a memory cell with metal-rich metal chalcogenide |
| 05/31/2006 | EP1662575A2 A NOT circuit |
| 05/31/2006 | CN1780013A On-chip electrically alterable resistor |
| 05/31/2006 | CN1780012A Production of sulfur compound phase-variable memory |
| 05/31/2006 | CN1779947A Production of sodium electronic phase-variable memory device unit |
| 05/30/2006 | CA2227612C Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 05/25/2006 | US20060110846 Electrically programmable memory element with improved contacts |
| 05/24/2006 | CN1776930A Switching element, line-switching device and logic circuit |
| 05/23/2006 | US7050327 Differential negative resistance memory |
| 05/23/2006 | US7049623 Vertical elevated pore phase change memory |
| 05/18/2006 | WO2006052394A1 Electroless plating of metal caps for chalcogenide-based memory devices |
| 05/18/2006 | WO2006051996A1 Semiconductor device |
| 05/18/2006 | WO2006051645A1 Information recording medium and method for producing the same |
| 05/17/2006 | CN1773743A Method for producing phase change memory unit capable of reducing write operation current |
| 05/17/2006 | CN1773692A Memory cell and producing method thereof, semiconductor elements and memory cell |
| 05/16/2006 | US7045840 Nonvolatile semiconductor memory device comprising a variable resistive element containing a perovskite-type crystal structure |
| 05/16/2006 | US7045383 Method for making tapered opening for programmable resistance memory element |
| 05/11/2006 | WO2006049760A1 Metal-insulator-metal device |
| 05/11/2006 | US20060099822 Method of making a memory cell |
| 05/11/2006 | US20060099724 Memory cell with buffered layer |
| 05/11/2006 | US20060098524 Forming planarized semiconductor structures |
| 05/11/2006 | US20060097288 Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer and methods of fabricating the same |
| 05/11/2006 | US20060097238 Non-volatile memory element and production method thereof and storage memory arrangement |
| 05/10/2006 | EP1654735A1 Multilayered phase change memory |
| 05/10/2006 | CN1770494A Chalcogenide memory |
| 05/10/2006 | CN1255792C Information recording medium and production method thereof |
| 05/09/2006 | US7042057 Process for creating metal-insulator-metal devices |
| 05/09/2006 | US7042001 Phase change memory devices including memory elements having variable cross-sectional areas |
| 05/04/2006 | DE102004051152A1 NOR- und NAND-Speicheranordnung von resistiven Speicherelementen NOR and NAND memory array of resistive memory elements |
| 05/02/2006 | US7038935 2-terminal trapped charge memory device with voltage switchable multi-level resistance |
| 05/02/2006 | US7038261 Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retention |
| 05/02/2006 | US7038231 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation |
| 05/02/2006 | US7038230 Horizontal chalcogenide element defined by a pad for use in solid-state memories |
| 05/02/2006 | US7037749 Methods for forming phase changeable memory devices |
| 04/27/2006 | US20060086931 Electro- and electroless plating of metal in the manufacture of PCRAM devices |
| 04/26/2006 | CN1764550A Information recording medium and method for manufacturing same |
| 04/26/2006 | CN1763987A Antimony precursor, phase-change memory device using the antimony precursor, and method of manufacturing the phase-change memory device |
| 04/26/2006 | CN1763986A Method of forming a phase change memory device having a small area of contact |