Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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03/05/2015 | US20150064873 Controlling ReRam Forming Voltage with Doping |
03/05/2015 | US20150061138 Method of forming a memory device |
03/05/2015 | US20150060755 Nanodevice assemblies |
03/05/2015 | US20150060754 Memory devices having electrodes comprising nanowires, systems including same and methods of forming same |
03/05/2015 | US20150060753 Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition |
03/05/2015 | US20150060752 Three-dimensional semiconductor device and method of manufacturing the same |
03/05/2015 | US20150060751 Memory cells with recessed electrode contacts |
03/05/2015 | US20150060750 Resistance Variable Memory Structure and Method of Forming the Same |
03/05/2015 | US20150060749 Nonvolatile memory device and method of manufacturing the same |
03/03/2015 | US8971089 Low power phase change memory cell |
03/03/2015 | US8969846 Variable resistance memory |
03/03/2015 | US8969845 Memory cells having storage elements that share material layers with steering elements and methods of forming the same |
03/03/2015 | US8969844 Embedded resistors for resistive random access memory cells |
03/03/2015 | US8969843 Memory device |
03/03/2015 | US8969168 Method for manufacturing variable resistance element |
03/03/2015 | US8969142 Switching materials comprising mixed nanoscopic particles and carbon nanotubes and methods of making and using the same |
03/03/2015 | US8969129 ReRAM cells including TaXSiYN embedded resistors |
02/26/2015 | US20150056798 Methods of forming metal oxide |
02/26/2015 | US20150056749 Atomic Layer Deposition of Metal Oxide Materials for Memory Applications |
02/26/2015 | US20150056748 Methods for Forming Resistive Switching Memory Elements by Heating Deposited Layers |
02/26/2015 | US20150053910 Multistate Nonvolatile Memory Elements |
02/26/2015 | US20150053909 Nonlinear memristors |
02/26/2015 | US20150053908 Memristive device and method of manufacture |
02/26/2015 | US20150053907 Methods, apparatuses, and circuits for programming a memory device |
02/24/2015 | US8964460 Semiconductor device having a non-volatile memory built-in |
02/24/2015 | US8963275 Resistive-switching device capable of implementing multiary addition operation and method for multiary addition operation |
02/24/2015 | US8963236 Data storage device and methods of manufacturing the same |
02/24/2015 | US8963221 Strongly correlated nonvolatile memory element |
02/24/2015 | US8963117 Reduction of forming voltage in semiconductor devices |
02/24/2015 | US8963115 Memory device and method of manufacturing memory device |
02/24/2015 | US8963114 One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacers |
02/24/2015 | US8962466 Low temperature transition metal oxide for memory device |
02/24/2015 | US8962460 Methods of selectively forming metal-doped chalcogenide materials, methods of selectively doping chalcogenide materials, and methods of forming semiconductor device structures including same |
02/24/2015 | US8962438 Variable resistance memory device and method of forming the same |
02/24/2015 | US8962387 Methods of forming memory cells |
02/24/2015 | US8962385 ReRAM device structure |
02/24/2015 | US8962384 Memory cells having heaters with angled sidewalls |
02/19/2015 | US20150050795 Diode for variable-resistance material memories, processes of forming same, and methods of using same |
02/19/2015 | US20150050794 Method for fabricating electronic devices having semiconductor memory unit |
02/19/2015 | US20150050788 Current steering element formation for memory arrays |
02/19/2015 | US20150048298 Memory cell having resistance variable film and method of making the same |
02/19/2015 | US20150048297 Memory cell having resistance variable film and method of making the same |
02/19/2015 | US20150048291 Phase change memory cell with improved phase change material |
02/17/2015 | US8957400 Phase-change memory cell |
02/17/2015 | US8957399 Nonvolatile memory element and nonvolatile memory device |
02/17/2015 | US8956982 Manufacturing method of semiconductor device |
02/17/2015 | US8956959 Method of manufacturing a semiconductor device with two monocrystalline layers |
02/17/2015 | US8956939 Method of making a resistive random access memory device |
02/12/2015 | US20150044852 Method of forming rram structure |
02/12/2015 | US20150044851 Resistive random access memory and method for fabricating the same |
02/12/2015 | US20150044850 Resistive memory cell |
02/12/2015 | US20150044849 Three dimensional memory array architecture |
02/12/2015 | US20150044832 Resistive random access memory |
02/12/2015 | US20150044816 Method of manufacturing resistance change layer using irradiation of electron beam and resistive random access memory device using the same |
02/12/2015 | US20150041754 Resistance variable memory device with nanoparticle electrode and method of fabrication |
02/12/2015 | US20150041753 Nano-scale electrical contacts, memory devices including nano-scale electrical contacts, and related structures and devices |
02/12/2015 | US20150041752 Phase change memory element |
02/12/2015 | US20150041751 Customizable nonlinear electrical devices |
02/12/2015 | US20150041750 Resistive Memory Device and Method for Fabricating the Same |
02/12/2015 | US20150041749 Memory Cells and Methods of Forming Memory Cells |
02/12/2015 | US20150041748 Nonvolatile memory element and method of manufacturing the same |
02/12/2015 | US20150041747 Phase change material layers |
02/12/2015 | US20150041746 Non-volatile memory system with reliability enhancement mechanism and method of manufacture thereof |
02/12/2015 | DE102008016522B4 Phasenwechselspeicherzelle mit Phasenwechsel-Speichermaterial mit begrenztem Widerstand, Verfahren zur Herstellung einer deratigen Speicherzelle und integrierte Schaltung mit entsprechender Speicherzelle Phase change memory cell with phase change memory material with limited resistance, to methods for the preparation of a deratigen memory cell and integrated circuit with a corresponding memory cell |
02/11/2015 | CN104347800A 一种相变存储器选通管及其存储单元 A memory strobe tube and phase change memory cell |
02/11/2015 | CN104347799A 电阻式存储器及其制造方法 Resistive memory and manufacturing method thereof |
02/11/2015 | CN104347631A 使用组合间隔件的rram结构和工艺 Use a combination of structure and process rram spacer |
02/11/2015 | CN102569649B 具有阻变器件的半导体器件 Resistive device having a semiconductor device |
02/11/2015 | CN102244194B 自动对准的鳍型可编程存储单元 Fin-type programmable memory cell is automatically aligned |
02/10/2015 | US8952493 Memory cell device and method of manufacture |
02/10/2015 | US8952351 Programmable impedance memory elements with laterally extending cell structure |
02/10/2015 | US8952350 Non-volatile memory device and manufacturing method thereof |
02/10/2015 | US8952349 Switching device having a non-linear element |
02/10/2015 | US8952348 Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof |
02/10/2015 | US8952347 Resistive memory cell array with top electrode bit line |
02/10/2015 | US8952299 Dual resistance heater for phase change devices and manufacturing method thereof |
02/10/2015 | US8951832 Variable-resistance material memories and methods |
02/10/2015 | US8951829 Resistive switching in memory cells |
02/05/2015 | US20150039785 Electronic device and method for fabricating the same |
02/05/2015 | US20150037959 Bipolar Multistate Nonvolatile Memory |
02/05/2015 | US20150037929 Apparatus and method for treating a substrate |
02/05/2015 | US20150036413 Resistive memory element based on oxygen-doped amorphous carbon |
02/05/2015 | US20150034898 Confined Defect Profiling within Resistive Random Memory Access Cells |
02/05/2015 | US20150034897 Post deposition adjustment of chalcogenide composition in chalcogenide containing semiconductors |
02/05/2015 | US20150034896 Resistive-Switching Nonvolatile Memory Elements |
02/05/2015 | DE102008028802B4 Verfahren zur Herstellung einer Speicherzelle, die eine vertikale Diode einschliesst A method for fabricating a memory cell including a vertical diode |
02/04/2015 | CN104332557A 一种基于单壁碳管的非易失性存储器及其制备方法 Nonvolatile memory and its preparation method based on single-walled carbon tubes |
02/04/2015 | CN104328326A 用于相变存储器的Zn-Sb-Se相变存储薄膜材料 For phase change memory Zn-Sb-Se thin film phase change memory material |
02/04/2015 | CN103165812B 氧化钨阻变存储器的制造方法 The method of manufacturing the tungsten oxide resistive memory |
02/03/2015 | US8947909 System and method for creating a bipolar resistive RAM (RRAM) |
02/03/2015 | US8947908 Hetero-switching layer in a RRAM device and method |
02/03/2015 | US8946672 Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element |
02/03/2015 | US8946668 Semiconductor device and method of manufacturing the same |
02/03/2015 | US8946666 Ge-Rich GST-212 phase change memory materials |
02/03/2015 | US8946665 Semiconductor devices and methods of fabricating the same |
02/03/2015 | US8946073 Phase change memory cell with large electrode contact area |
02/03/2015 | US8946046 Guided path for forming a conductive filament in RRAM |
02/03/2015 | US8946020 Method of forming controllably conductive oxide |
02/03/2015 | US8945955 Method of changing reflectance or resistance of a region in an optoelectronic memory device |
01/29/2015 | US20150032960 Electronic devices having semiconductor memory units and method of fabricating the same |