| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 04/25/2006 | US7033856 Spacer chalcogenide memory method |
| 04/19/2006 | EP1647060A1 Etching method for making chalcogenide memory elements |
| 04/19/2006 | CN1761083A Phase transfer element and fabricating method thereof and phase transfer memory cell |
| 04/18/2006 | US7030410 Resistance variable device |
| 04/18/2006 | US7030405 Method and apparatus for resistance variable material cells |
| 04/18/2006 | US7029978 Controlling the location of conduction breakdown in phase change memories |
| 04/18/2006 | US7029924 Buffered-layer memory cell |
| 04/12/2006 | EP1644993A2 Field effect chalcogenide devices |
| 04/12/2006 | EP1018772B1 Thin-film two-terminal elements, method of production thereof, and liquid crystal display |
| 04/12/2006 | CN1759482A Phase change memory device |
| 04/11/2006 | US7027322 EPIR device and semiconductor devices utilizing the same |
| 04/11/2006 | US7026702 Memory device |
| 04/11/2006 | US7026639 Phase change memory element capable of low power operation and method of fabricating the same |
| 04/11/2006 | CA2229611C Electrically erasable memory elements characterized by reduced current and improved thermal stability |
| 04/06/2006 | WO2006035325A1 Electric device with nanowires comprising a phase change material |
| 04/06/2006 | WO2006034953A1 Resistive memory element with heater |
| 04/06/2006 | WO2006014249A3 Use of a chalcogen plasma to form chalcogenide switching materials for nanoscale electronic devices |
| 04/05/2006 | CN1756668A Phase-change recording material and information recording medium |
| 04/05/2006 | CN1756667A Phase variation recording material and information recording medium |
| 04/04/2006 | US7023014 Non-volatile memory and fabrication method thereof |
| 04/04/2006 | US7023009 Electrically programmable memory element with improved contacts |
| 04/04/2006 | US7022579 Method for filling via with metal |
| 04/04/2006 | US7022555 Methods of forming a semiconductor memory device |
| 03/30/2006 | US20060068543 Electro-and electroless plating of metal in the manufacture of PCRAM Devices |
| 03/28/2006 | US7018863 Method of manufacture of a resistance variable memory cell |
| 03/23/2006 | US20060063297 Reducing leakage currents in memories with phase-change material |
| 03/22/2006 | EP1636825A2 Multi-terminal chalcogenide switching devices |
| 03/22/2006 | CN1750289A Method for producing nano phase transition storage unit |
| 03/21/2006 | US7015504 Sidewall formation for high density polymer memory element array |
| 03/16/2006 | WO2006029228A2 Memory using mixed valence conductive oxides |
| 03/16/2006 | WO2006028117A1 Resistance change element and manufacturing method thereof |
| 03/16/2006 | US20060054962 Method to minimize formation of recess at surface planarized by chemical mechanical planarization |
| 03/16/2006 | US20060054878 Vertical elevated pore phase change memory |
| 03/14/2006 | US7012273 Phase change memory device employing thermal-electrical contacts with narrowing electrical current paths |
| 03/09/2006 | WO2005124788A3 Nanoscale programmable structures and methods of forming and using same |
| 03/09/2006 | WO2005072090A3 Multi-terminal devices having logic functionality |
| 03/09/2006 | US20060049391 Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof |
| 03/09/2006 | US20060049389 Electric device comprising phase change material |
| 03/08/2006 | CN1744340A Silicon-contained series surfur-family compound phase transformation film material for phase transformation memory |
| 03/08/2006 | CN1744325A Unit structure for realizing multi-bit memory |
| 03/08/2006 | CN1744324A Unit structure for reducing programed current of phase transformation memory |
| 03/08/2006 | CN1744299A Memory cell with an asymmetrical area |
| 03/08/2006 | CN1744295A Method for preparing nano phase transformation memory unit capable of reducing write-operation current |
| 03/01/2006 | EP1630880A2 Memory device (CBRAM) comprising memory cells based on resistance variable solid-state electrolyte material and manufacturing process thereof |
| 03/01/2006 | EP1504334A4 Methods of computing with digital multistate phase change materials |
| 02/28/2006 | US7006376 Tunable cantilever apparatus and method for making same |
| 02/28/2006 | US7005666 Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby |
| 02/28/2006 | US7005665 Phase change memory cell on silicon-on insulator substrate |
| 02/22/2006 | EP1628352A1 Electric switch and storage device using same |
| 02/22/2006 | CN1738022A Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures |
| 02/21/2006 | US7002833 Complementary bit resistance memory sensor and method of operation |
| 02/16/2006 | US20060034112 Data read circuit for use in a semiconductor memory and a method therefor |
| 02/16/2006 | DE102005025209A1 Semiconductor memory device, for electronic system, comprises phase changeable material pattern overlying protrusion portion of molding layer, and oxidation barrier layer covering the phase-changeable material and protrusion portion |
| 02/14/2006 | US6998697 Non-volatile resistance variable devices |
| 02/14/2006 | US6998312 Microelectronic programmable device and methods of forming and programming the same |
| 02/14/2006 | US6998289 Multiple layer phase-change memory |
| 02/09/2006 | WO2006014249A2 Use of a chalcogen plasma to form chalcogenide switching materials for nanoscale electronic devices |
| 02/09/2006 | US20060028886 Control of set/reset pulse in response to peripheral temperature in PRAM device |
| 02/07/2006 | US6995999 Nonvolatile semiconductor memory device and control method thereof |
| 02/07/2006 | US6995388 Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode |
| 02/02/2006 | US20060023532 Method of operating a complementary bit resistance memory sensor |
| 02/01/2006 | CN1729583A Electric device comprising phase change material |
| 02/01/2006 | CN1729575A Electric device with phase change material and parallel heater |
| 01/31/2006 | US6992369 Programmable resistance memory element with threshold switching material |
| 01/31/2006 | US6992365 Reducing leakage currents in memories with phase-change material |
| 01/31/2006 | US6992323 Memory cell |
| 01/26/2006 | US20060017076 Electric device with phase change material and metod of manufacturing the same |
| 01/25/2006 | EP1619037A1 Phase-change recording material and information recording medium |
| 01/25/2006 | CN1726602A Electric device with phase change material and metod of manufacturing the same |
| 01/25/2006 | CN1725520A Metal type diode and metal-type triode |
| 01/25/2006 | CN1725443A Manufacturing method of metal/insulation layer/metal structure |
| 01/19/2006 | US20060011897 Memory resistance film with controlled oxygen content |
| 01/19/2006 | DE102004031135A1 Resistives Halbleiterelement basierend auf einem Festkörperionenleiter The resistive semiconductor element based on a solid ionic conductors |
| 01/18/2006 | CN1722488A Thin film phase-change memory |
| 01/17/2006 | US6987689 Non-volatile multi-stable memory device and methods of making and using the same |
| 01/17/2006 | US6987290 Current-jump-control circuit including abrupt metal-insulator phase transition device |
| 01/12/2006 | WO2005083810A3 Programmable structure and device including a metal oxide ion conductor and method of forming the same |
| 01/12/2006 | US20060006443 Electrically programmable memory element with reduced area of contact |
| 01/12/2006 | US20060006421 Memory device, programmable resistance memory cell and memory array |
| 01/11/2006 | CN1720625A Method for the production of a memory cell, memory cell and memory cell arrangement |
| 01/10/2006 | US6985378 Programmable microelectronic device, structure, and system and method of forming the same |
| 01/05/2006 | WO2006001942A2 Electronic isolation device |
| 01/04/2006 | CN1717748A Method of driving a non-volatile memory |
| 01/03/2006 | US6982913 Data read circuit for use in a semiconductor memory and a memory thereof |
| 12/29/2005 | WO2005124788A2 Nanoscale programmable structures and methods of forming and using same |
| 12/29/2005 | US20050287698 Use of chalcogen plasma to form chalcogenide switching materials for nanoscale electronic devices |
| 12/29/2005 | US20050286294 Resistance variable memory elements based on polarized silver-selenide network growth |
| 12/29/2005 | US20050286211 Solid electrolyte switching element |
| 12/29/2005 | US20050285096 Programmable structure, an array including the structure, and methods of forming the same |
| 12/29/2005 | US20050285095 Resistive semiconductor element based on a solid-state ion conductor |
| 12/29/2005 | DE20321085U1 Phase change memory has switching region along lateral extent of memory between contacts; current passes through switching region along lateral extent; switching region lies in memory material layer if there is constriction between contacts |
| 12/29/2005 | DE102004025615A1 Production of a solid electrolyte storage cell where a storage element has a material region formed from a solid electrolyte material and a region of the solid electrolyte material is activated |
| 12/29/2005 | DE102004025083A1 Production of a solid body electrolyte material region made from a chalcogenide material comprises using germanium and/or silicon as precursor compound or carrier compound in the form of an organic compound |
| 12/29/2005 | DE102004024610B3 Festkörperelektrolytschaltelement Solid electrolyte switching element |
| 12/28/2005 | EP1609615A1 Information recording medium and method for manufacturing same |
| 12/28/2005 | EP1609034A2 Chalcogenide glass constant current device, and its method of fabrication and operation |
| 12/28/2005 | CN1714461A Vertical elevated pore phase change memory |
| 12/28/2005 | CN1714405A Forming phase change memories |
| 12/28/2005 | CN1714404A Method and system to store information |
| 12/22/2005 | US20050283515 Methods of factoring and modular arithmetic |