| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 02/19/2008 | US7332401 Method of fabricating an electrode structure for use in an integrated circuit |
| 02/14/2008 | US20080035907 Composite Chalcogenide Materials and Devices |
| 02/13/2008 | CN101123295A A non-crystal sold film material Ag1-x-yGexSey and making method and its application |
| 02/13/2008 | CN100369141C Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target |
| 02/12/2008 | US7329558 Differential negative resistance memory |
| 02/07/2008 | US20080029755 Structure for phase change memory and the method of forming same |
| 02/07/2008 | US20080029754 Variable resistance non-volatile memory devices including a uniformly narrow contact layer and methods of manufacturing same |
| 02/06/2008 | CN101118922A CuxO resistor memory with upper electrode as protective layer and manufacturing method therefor |
| 02/06/2008 | CN100367512C Quantum-size electronic devices and operating conditions thereof |
| 02/05/2008 | US7326952 Elevated pore phase-change memory |
| 02/05/2008 | US7326951 Chalcogenide random access memory |
| 02/05/2008 | US7326950 Memory device with switching glass layer |
| 01/31/2008 | US20080026535 Phase-changeable memory device and method of manufacturing the same |
| 01/31/2008 | US20080026510 Nonvolatile memory cell comprising a reduced height vertical diode |
| 01/30/2008 | EP1882271A2 Non-volatile memory |
| 01/30/2008 | CN101116195A Phase change memory cell with high read margin at low power operation |
| 01/30/2008 | CN101116194A Pillar phase change memory cell |
| 01/30/2008 | CN101114695A Memory element and method of manufacturing thereof |
| 01/30/2008 | CN100365815C Non-volatile memory and method for manufacturing same |
| 01/29/2008 | US7323708 Phase change memory devices having phase change area in porous dielectric layer |
| 01/24/2008 | WO2008010290A1 Semiconductor device |
| 01/24/2008 | US20080020508 Reducing oxidation of phase change memory electrodes |
| 01/24/2008 | US20080019167 Controllable ovonic phase-change semiconductor memory device and methods of programming the same |
| 01/24/2008 | US20080017953 Memory elements and methods for making same |
| 01/24/2008 | US20080017912 Non-volatile memory cell with embedded antifuse |
| 01/23/2008 | EP1881542A1 Phase change memory cell including nanocomposite insulator |
| 01/23/2008 | EP1881541A2 Phase change memory cell having step-like programming characteristic |
| 01/23/2008 | EP1881540A2 Phase change memory cell having a step-like programming characteristic |
| 01/23/2008 | EP1881539A2 Phase change memory cell having a step-like programming characteristic |
| 01/23/2008 | CN101110468A Phase change memory cell including nanocomposite insulator |
| 01/23/2008 | CN101110467A Phase change memory cell having step-like programming characteristic |
| 01/23/2008 | CN101110466A Phase change memory cell having a step-like programming characteristic |
| 01/23/2008 | CN101110465A Phase change memory cell having a step-like programming characteristic |
| 01/23/2008 | CN101110464A Heating layer for reducing phase-change memory device unit power consumption and its manufacturing method |
| 01/23/2008 | CN100364132C Silicon-contained series surfur-family compound phase transformation film material for phase transformation memory |
| 01/23/2008 | CN100364075C Variable electrical risistance device, producing method of variable resistance memory and memory |
| 01/23/2008 | CN100364048C Manufacturing method of metal/insulation layer/metal structure |
| 01/17/2008 | WO2008007481A1 Resistive memory device |
| 01/17/2008 | US20080013364 Method of making non-volatile memory cell with embedded antifuse |
| 01/17/2008 | US20080012000 Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
| 01/17/2008 | US20080011999 Microelectronic Devices Using Sacrificial Layers and Structures Fabricated by Same |
| 01/17/2008 | US20080011997 Semiconductor device and method of manufacturing the same |
| 01/16/2008 | EP1879232A2 Low power phase change memory cell having different phase change materials |
| 01/16/2008 | EP1878065A1 Phase change memory device |
| 01/16/2008 | EP1878064A1 Method and structure for peltier-controlled phase change memory |
| 01/16/2008 | CN101106177A Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices |
| 01/16/2008 | CN101106176A Method for making a pillar-type phase change memory element |
| 01/16/2008 | CN101106175A Low power phase change memory cell having different phase change materials |
| 01/16/2008 | CN101106174A Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device |
| 01/16/2008 | CN101106173A Method of forming a phase change material layer and a phase change memory device so formed |
| 01/16/2008 | CN101106172A An erasable and readable inorganic film electrical dual stabilization part and its making method |
| 01/16/2008 | CN101106171A Non-volatile memory device including variable resistance material |
| 01/15/2008 | US7319235 Resistive semiconductor element based on a solid-state ion conductor |
| 01/15/2008 | US7319057 Phase change material memory device |
| 01/10/2008 | US20080006813 Semiconductor memory device and fabrication method thereof |
| 01/10/2008 | US20080006812 Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same |
| 01/09/2008 | EP1543569B1 Non-volatile memory element and production methods thereof and storage memory arrangements |
| 01/09/2008 | CN101101966A Phase change film material of silicon-adulterated sulfur series for phase change memory |
| 01/09/2008 | CN101101965A Phase change film material of silicon-adulterated sulfur series for phase change memory |
| 01/09/2008 | CN101101964A Non-volatile memory device including a variable resistance material |
| 01/09/2008 | CN101101963A A high status ratio inorganic film dual stabilization part and its making method |
| 01/09/2008 | CN101101962A Gallium-adulterated Ga3Sb8Te1 phase change memory unit and its making method |
| 01/09/2008 | CN101101961A Phase change memory unit with loop phase change material and its making method |
| 01/09/2008 | CN101101960A A resistance memory for reducing reset operation current |
| 01/09/2008 | CN101101919A Phase change random memories including a doped phase change layer, and methods of operating the same |
| 01/03/2008 | WO2008002760A1 Phase change alloy etch |
| 01/03/2008 | WO2008001712A1 Switching element, semiconductor device, rewritable logical integrated circuit, and memory element |
| 01/03/2008 | WO2008001411A1 Process for producing semiconductor memory device |
| 01/03/2008 | US20080001136 Electrically Writeable and Erasable Memory Medium |
| 01/02/2008 | EP1873832A1 Memory device and semiconductor integrated circuit |
| 01/02/2008 | CN101097989A Memory cell with memory material insulation and manufacturing method |
| 01/02/2008 | CN101097988A Variable resistance random access memory device containing n+ interface layer |
| 01/02/2008 | CN100359666C Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures |
| 01/01/2008 | US7315469 Control of set/reset pulse in response to peripheral temperature in PRAM device |
| 01/01/2008 | US7315465 Methods of operating and forming chalcogenide glass constant current devices |
| 12/27/2007 | WO2007148405A1 Semiconductor device |
| 12/27/2007 | US20070297231 Non-volatile memory structure |
| 12/27/2007 | US20070297216 Self-assembly of molecular devices |
| 12/27/2007 | US20070297213 Forming a carbon layer between phase change layers of a phase change memory |
| 12/27/2007 | DE102004014965B4 Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle A method of manufacturing a non-volatile memory cell |
| 12/26/2007 | CN101093873A GESBTE thin film manufacturing method, phase-change direct-access storage and manufacturing method therefor |
| 12/26/2007 | CN101093872A Phase change memory component, and manufacturing method |
| 12/21/2007 | WO2007146181A2 A method of operating a multi-terminal electronic device |
| 12/21/2007 | WO2007145710A1 Refreshing a phase change memory |
| 12/21/2007 | WO2007126690A3 Phase change memory elements using self- aligned phase change material layers and methods of making and using same |
| 12/21/2007 | WO2006059313A3 Non-volatile memory |
| 12/20/2007 | DE102004051152B4 NOR-Speicheranordnung von resistiven Speicherelementen NOR memory array of resistive memory elements |
| 12/19/2007 | CN101090147A Resistor random access memory cell with l-shaped electrode |
| 12/19/2007 | CN100356607C Production of sulfur compound phase-variable memory |
| 12/19/2007 | CN100356606C Method for the manufacture of nanometer magnitude unit device in phase-change storage |
| 12/19/2007 | CN100356567C Phase transformation micro, nano electronic memory device and manufacturing method |
| 12/18/2007 | US7309616 Laser annealing of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits |
| 12/13/2007 | WO2007141865A1 Semiconductor device and its manufacturing method |
| 12/13/2007 | US20070287219 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication |
| 12/12/2007 | EP1864951A2 Chalcogenide glass constant current device, and its method of fabrication and operation |
| 12/12/2007 | EP1393377A4 Applications for and tunneling device |
| 12/12/2007 | CN100355102C Thin-film two-terminal elements, method of production thereof, and liquid crystal display |
| 12/11/2007 | US7307868 Integrated circuit including memory cell for storing an information item and method |
| 12/11/2007 | US7307267 Electric device with phase change material and parallel heater |
| 12/06/2007 | WO2007138703A1 Semiconductor device |