| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 04/23/2008 | CN101167188A Electric device comprising phase change material |
| 04/23/2008 | CN101165936A Memory unit and its forming method |
| 04/23/2008 | CN101165935A Method for making memory cell device |
| 04/23/2008 | CN101165934A Method of forming a phase change memory and method for forming phase change layer |
| 04/23/2008 | CN101165911A Phase change memory devices and methods of manufacturing the same |
| 04/23/2008 | CN100383994C Method for preparing phase-change memory device unit using chalcogenide compound nanometer material |
| 04/22/2008 | US7361924 Non-volatile memory element and production method thereof and storage memory arrangement |
| 04/17/2008 | WO2008027209A3 Programmable resistance memory devices and systems using the same and methods of forming the same |
| 04/17/2008 | US20080090326 Method of surface treating a phase change layer and method of manufacturing a phase change memory device using the same |
| 04/17/2008 | US20080089154 Memory device |
| 04/17/2008 | US20080089111 Resistance type memory device and fabricating method and operating method thereof |
| 04/16/2008 | EP1912266A1 Method of forming phase change memory devices in a pulsed DC deposition chamber |
| 04/16/2008 | EP1687855B1 Integrated semiconductor memory and method for producing an integrated semiconductor memory |
| 04/16/2008 | EP1470589B1 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures |
| 04/16/2008 | CN101164176A Fabrication of a phase-change resistor using a backend process |
| 04/16/2008 | CN101164167A Non volatile memory cell and semiconductor memory device |
| 04/16/2008 | CN101162760A Resistor type memory element and manufacturing method thereof and operation method |
| 04/16/2008 | CN101162759A Memory cell of nitridation titanium/zinc oxide resistor type stochastic memory and preparation method |
| 04/16/2008 | CN101162758A Method of surface treating a phase change layer and method of manufacturing a phase change memory device using the same |
| 04/16/2008 | CN100382330C Unit structure for realizing multi-bit memory |
| 04/15/2008 | US7358521 Lateral phase change memory and method therefor |
| 04/15/2008 | US7358520 Semiconductor memory cell, method for fabricating it and semiconductor memory device |
| 04/10/2008 | WO2008041285A1 Process for producing semiconductor memory device |
| 04/10/2008 | US20080085419 Electro- and Electroless Plating of Metal in the Manufacture of PCRAM Devices |
| 04/10/2008 | US20080083918 Storage Element |
| 04/10/2008 | DE10245554B4 Nanopartikel als Ladungsträgersenke in resistiven Speicherelementen Nanoparticles as charge carrier sink in resistive memory elements |
| 04/09/2008 | CN101160660A Electrical device, memory device, and semiconductor integrated circuit |
| 04/09/2008 | CN101159314A Memory cell of resistor type stochastic memory and preparation method thereof |
| 04/09/2008 | CN101159313A Sulfureous phase changing memory CRAM storage member |
| 04/09/2008 | CN101159312A Memory cell device with circumferentially-extending memory element |
| 04/09/2008 | CN101159311A Nonvolatile memory device and fabrication method thereof |
| 04/09/2008 | CN101159310A Wet oxidation preparation method of Cu2O resistor memory |
| 04/09/2008 | CN101159309A Method for implementing low power consumption resistance memory |
| 04/09/2008 | CN101159284A WO* resistor memory of self-aligning forming upper electrode and manufacturing method thereof |
| 04/09/2008 | CN100380700C Composite electrode having low heat consumption and small contact area for memory device of phase-changing medium |
| 04/09/2008 | CN100380524C Electric field pulse inductive resistance element and semiconductor using the same |
| 04/03/2008 | US20080078984 Semiconductor device and method of fabricating the same |
| 04/03/2008 | DE102007004639A1 Solid electrolyte memory device i.e. conductive bridging RAM device, manufacturing method, involves introducing metallic material, which reduces solubility and/or mobility of ions i.e. silver ions, into electrolyte intermediate cell areas |
| 04/03/2008 | DE102006048384A1 Sandwich structure e.g. memory cell such as conductive bridging RAM-cell, has layer isolated from another layer and containing silver and tantalum, which reduces mobility of silver atoms and silver ions |
| 04/02/2008 | EP1905086A1 Method for forming multi-layered binary oxide film for use in resistance random access memory |
| 04/02/2008 | CN100379047C Method for producing nano phase transition storage unit |
| 04/02/2008 | CN100379046C Phase change material memory device and forming method |
| 04/02/2008 | CN100379011C Memory cell manufacturing method, memory cell and phase-change memory cell |
| 04/02/2008 | CN100378998C Memory element and storage device using the same |
| 04/01/2008 | US7351991 Methods for forming phase-change memory devices |
| 03/27/2008 | WO2008035432A1 Semiconductor storage device, method for manufacturing semiconductor storage device, writing method of semiconductor storage device, and reading method of semiconductor storage device |
| 03/27/2008 | US20080073636 Nonvolatile Memory Device and Fabrication Method Thereof |
| 03/26/2008 | EP1903625A2 Phase change memory devices including memory cells having different phase change materials and related methods and systems |
| 03/26/2008 | CN101150173A Nonvolatile memory device and fabrication method thereof |
| 03/26/2008 | CN101150172A Phase change memory and its making method |
| 03/26/2008 | CN100377239C Information recording medium and method for manufacturing the same |
| 03/25/2008 | US7348620 Forming phase change memories |
| 03/25/2008 | US7348205 Method of forming resistance variable devices |
| 03/20/2008 | WO2008033332A2 Damascene metal-insulator-metal (mim) device with improved scaleability |
| 03/20/2008 | WO2008033203A1 Chalcogenide semiconductor memory device with insulating dielectric |
| 03/20/2008 | US20080070344 PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same |
| 03/20/2008 | US20080068879 Phase change memory devices including memory cells having different phase change materials and related methods and systems |
| 03/20/2008 | US20080067491 Phase change material memory device |
| 03/20/2008 | US20080067490 Phase-change memory device having heater electrode with improved heat generation efficiency |
| 03/20/2008 | US20080067488 Phase change memory device |
| 03/20/2008 | US20080067487 Phase change memory device |
| 03/20/2008 | US20080067485 Increasing adherence of dielectrics to phase change materials |
| 03/19/2008 | CN101145600A Storage element and storage device using the same |
| 03/19/2008 | CN101145599A Memory device having wide area phase change element and small electrode contact area |
| 03/19/2008 | CN101145598A Method for improving CuxO electric resistance memory fatigue property |
| 03/18/2008 | US7345141 Polymer material having carrier transport property, and organic thin film element, electronic device, and conductor line which use same |
| 03/13/2008 | WO2008030355A2 Programmable polyelectrolyte electrical switches |
| 03/13/2008 | DE102006040238A1 Transistor arrangement for selecting one memory cell from multiple memory cells in substrate, has memory cell, and one wordline forms in one wordline trench of multiple gate electrodes at side panel of active areas of two adjacent set |
| 03/12/2008 | CN101142695A 相变存储器及其制造方法 The method of manufacturing a phase change memory and its |
| 03/12/2008 | CN100375284C Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures |
| 03/11/2008 | US7341892 Semiconductor memory cell and method of forming same |
| 03/06/2008 | WO2008027209A2 Programmable resistance memory devices and systems using the same and methods of forming the same |
| 03/06/2008 | WO2008027163A2 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
| 03/06/2008 | WO2008027135A2 Self-aligned, planar phase change memory elements and devices, systems employing the same and methods of forming the same |
| 03/06/2008 | US20080055973 Small Electrode for a Chacogenide Switching Device and Method for Fabricating Same |
| 03/06/2008 | US20080054246 Semiconductor device |
| 03/06/2008 | US20080054245 Memory Device Including Phase-Changeable Material Region and Method of Fabricating the Same |
| 03/05/2008 | EP1665404A4 Multiple bit chalcogenide storage device |
| 03/05/2008 | CN101136453A Thin film phase change memory cell and its manufacture method |
| 03/05/2008 | CN101136452A Phase variation storage installation and its making method |
| 03/05/2008 | CN100373582C Method for preparing nano phase transformation memory unit capable of reducing write-operation current |
| 02/28/2008 | WO2008023637A1 Storage element, memory device and semiconductor integrated circuit |
| 02/28/2008 | US20080048171 Small electrode for phase change memories |
| 02/28/2008 | US20080048168 Semiconductor device and manufacture method thereof |
| 02/28/2008 | US20080048167 Chalcogenide devices exhibiting stable operation from the as-fabricated state |
| 02/28/2008 | US20080048165 Variable resistance element and resistance variable type memory device |
| 02/27/2008 | EP1576676B1 Electric device comprising phase change material |
| 02/27/2008 | CN101133503A Method for manufacturing an electrolyte material layer in semiconductor memory devices |
| 02/27/2008 | CN101132052A Information storage elements and methods of manufacture thereof |
| 02/27/2008 | CN101132051A Semiconductor memory device and fabrication method thereof |
| 02/27/2008 | CN101132050A Thin film fuse phase change cell with thermal isolation layer and manufacturing method |
| 02/27/2008 | CN101132049A SiSb based phase-change thin-film material used for phase-change memory device |
| 02/27/2008 | CN101132048A Phase-change memory cell structure and fabrication method thereof |
| 02/27/2008 | CN100372013C Data storage medium and producing method thereof, data storage device and producing method thereof |
| 02/26/2008 | US7335907 Memory device |
| 02/21/2008 | WO2008020961A1 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using |
| 02/20/2008 | EP1889308A1 Memory device with switching glass layer |
| 02/20/2008 | EP1889294A1 One-time programmable crosspoint memory with a diode as an antifuse |
| 02/20/2008 | CN101127386A Self-aligning structure and method for limiting resistance random access memorizer melting point |
| 02/19/2008 | US7332765 Variable resistance functional body and storage device |