| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 06/25/2008 | CN101207149A Phase change random access memory device with transistor, and method for fabricating a memory device |
| 06/25/2008 | CN100397677C Phase change type multi-digit quasi-memory cell and its operating method |
| 06/25/2008 | CN100397676C Characterization emthod for convertable phase change material electric property |
| 06/25/2008 | CN100397675C Improved unit structure for reducing phase transition memory writing current, and method thereof |
| 06/25/2008 | CN100397615C Memory cell and producing method thereof, semiconductor elements and memory cell |
| 06/25/2008 | CN100397561C Process for preparing nano phase change storage device unit |
| 06/19/2008 | US20080142913 Z offset mems devices and methods |
| 06/19/2008 | US20080142778 Integrated circuit including a memory fabricated using self-aligned processing |
| 06/19/2008 | US20080142776 Phase change random access memory device with transistor, and method for fabricating a memory device |
| 06/19/2008 | US20080142775 Programmable via structure and method of fabricating same |
| 06/19/2008 | US20080142774 Integrated Circuit Having Resistive Memory |
| 06/19/2008 | DE102004011430B4 Halbleiterspeichereinrichtung A semiconductor memory device |
| 06/18/2008 | CN101202327A Phase change memory having a sidewall contact |
| 06/18/2008 | CN101202326A Phase-change storage apparatus and method of manufacture |
| 06/17/2008 | US7387938 Methods of forming phase change storage cells for memory devices |
| 06/12/2008 | WO2008068992A1 Nonvolatile semiconductor storage device |
| 06/12/2008 | WO2008068991A1 Nonvolatile semiconductor storage device |
| 06/12/2008 | US20080138931 Method for Making a Self-Converged Void and Bottom Electrode for Memoery Cell |
| 06/12/2008 | US20080138930 Method for Making a Keyhole Opening during the Manufacture of a Memory Cell |
| 06/12/2008 | US20080138929 Method for Making a Self-Converged Memory Material Element for Memory Cell |
| 06/12/2008 | US20080137396 Spin glass memory cell |
| 06/12/2008 | US20080136751 Organic Light Emitting Diode Display on a Flexible Substrate |
| 06/11/2008 | EP1929556A1 Reproducible resistance variable insulating memory devices and methods for forming same |
| 06/11/2008 | EP1929555A1 Phase change memory cell and method of formation |
| 06/11/2008 | CN101197423A Method for making a self-converged memory material element for memory cell |
| 06/11/2008 | CN101197422A Method for making a keyhole opening during the manufacture of a memory cell |
| 06/11/2008 | CN101197318A Method for making a self-converged void and bottom electrode for memoery cell |
| 06/11/2008 | CN101197317A Phase change memory cell with thermal barrier and method for fabricating the same |
| 06/11/2008 | CN100394603C 相变存储装置 Phase change memory device |
| 06/10/2008 | US7385235 Spacer chalcogenide memory device |
| 06/10/2008 | US7385218 Phase changeable layers including protruding portions in electrodes thereof and methods of forming same |
| 06/10/2008 | US7384825 Methods of fabricating phase change memory elements having a confined portion of phase change material on a recessed contact |
| 06/05/2008 | US20080131994 Method for manufacturing phase change memory device which can stably form an interface between a lower electrode and a phase change layer |
| 06/05/2008 | US20080130349 Non-volatile memory device, method of manufacturing the same, and method of operating the same |
| 06/05/2008 | US20080128677 Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same |
| 06/05/2008 | US20080128676 Phase-change random access memory device and method of manufacturing the same |
| 06/05/2008 | US20080128675 Phase change memory cell having a tapered microtrench |
| 06/05/2008 | US20080128674 Differential negative resistance memory |
| 06/04/2008 | EP1927984A1 Information recording medium and method for manufacturing the same |
| 06/04/2008 | CN101192650A Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the same |
| 06/04/2008 | CN101192649A Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same |
| 06/04/2008 | CN101192648A Resistive random access memory and method of manufacturing the same |
| 06/04/2008 | CN101192647A Nonvolatile memory device including amorphous alloy metal oxide layer |
| 06/03/2008 | US7381611 Multilayered phase change memory |
| 05/29/2008 | WO2008062623A1 Nonvolatile storage device |
| 05/29/2008 | WO2008027279A3 Bottom electrode geometry for phase change memory |
| 05/29/2008 | WO2008027278A3 Phase change memory with bi-layer bottom electrode |
| 05/29/2008 | US20080124833 Applying solution of hydrazine-based precursor to a metal chalcogenide to hydrophilic surface to fill holes; annealing to convert precursor to metal chalcogenide; quality |
| 05/29/2008 | US20080123399 Non-volatile memory devices, method of manufacturing and method of operating the same |
| 05/29/2008 | US20080123396 Semiconductor Device and Driving Method of the Same |
| 05/29/2008 | US20080121865 Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same |
| 05/29/2008 | US20080121864 Resistive random access memory and method of manufacturing the same |
| 05/29/2008 | US20080121863 Phase change memory device and method for fabricating the same |
| 05/29/2008 | US20080121861 Self-Aligned Structure and Method for Confining a Melting Point in a Resistor Random Access Memory |
| 05/29/2008 | US20080121860 Semiconductor memory cell and method of forming same |
| 05/29/2008 | US20080121859 Forced ion migration for chalcogenide phase change memory device |
| 05/29/2008 | US20080121858 Mim device and electronic apparatus |
| 05/27/2008 | US7379328 Semiconductor device |
| 05/27/2008 | US7378701 Phase changeable memory devices including carbon nano tubes |
| 05/22/2008 | WO2008059701A1 Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element |
| 05/22/2008 | US20080116445 Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the same |
| 05/21/2008 | EP1923928A2 Phase change memory cell having a sidewall contact |
| 05/21/2008 | EP1922743A2 Method and system of using nanotube fabrics as joule heating elements for memories and other applications |
| 05/21/2008 | EP1476877B1 Programmable conductor random access memory and method for sensing same |
| 05/21/2008 | CN101183705A Resistive random access memory having a solid solution layer and method of manufacturing the same |
| 05/21/2008 | CN101183681A Bistable resistance random access memory structure for enhanced retention |
| 05/21/2008 | CN100389507C Sulfur compound random access internal memory and manufacturing method thereof |
| 05/15/2008 | US20080113469 Methods of fabricating a semiconductor device including a self-aligned cell diode |
| 05/14/2008 | CN101180746A Snse-based limited reprogrammable cell |
| 05/14/2008 | CN101180683A Semiconductor device |
| 05/13/2008 | US7372166 Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof |
| 05/08/2008 | WO2008054572A1 Method of selecting operating characteristics of a resistive memory device |
| 05/08/2008 | US20080108175 Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer |
| 05/08/2008 | US20080105862 Thin film fuse phase change ram and manufacturing method |
| 05/07/2008 | CN101174672A Storage cell and its manufacturing process |
| 05/07/2008 | CN101174671A Production method for vanadium dioxide nano thin film with phase-change characteristic |
| 05/07/2008 | CN101174549A Method for filling holes with metal chalcogenide material |
| 05/07/2008 | CN100386820C Non-volatile variohm, memory element, and its scaling method |
| 05/02/2008 | WO2008030355A3 Programmable polyelectrolyte electrical switches |
| 05/02/2008 | WO2008027163A3 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
| 05/02/2008 | WO2007146181A3 A method of operating a multi-terminal electronic device |
| 05/01/2008 | US20080102560 Method of forming phase change memory devices in a pulsed DC deposition chamber |
| 05/01/2008 | US20080101112 Phase change memory device with reduced unit cell size and improved transistor current flow and method for manufacturing the same |
| 05/01/2008 | US20080101109 Phase Change Memory, Phase Change Memory Assembly, Phase Change Memory Cell, 2D Phase Change Memory Cell Array, 3D Phase Change Memory Cell Array and Electronic Component |
| 04/30/2008 | EP1916722A2 Carbon Filament Memory and Fabrication Method |
| 04/30/2008 | CN101171696A Method and structure for peltier-controlled phase change memory |
| 04/30/2008 | CN101170160A Method for manufacturing a resistor random access memory with a self-aligned air gap insulator |
| 04/30/2008 | CN101170159A Carbon filament memory and fabrication method |
| 04/30/2008 | CN101170077A Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas |
| 04/30/2008 | CN101169970A Methods of operating a bistable resistance random access memory |
| 04/30/2008 | CN100385702C Sticking material for programmable device |
| 04/30/2008 | CN100385668C Multi-crystal storage structure, method for forming said structure and semiconductor storage device using said structure |
| 04/29/2008 | US7366003 Method of operating a complementary bit resistance memory sensor and method of operation |
| 04/29/2008 | US7365354 Programmable resistance memory element and method for making same |
| 04/29/2008 | US7364937 Vertical elevated pore phase change memory |
| 04/24/2008 | WO2008047928A1 Semiconductor device and method for manufacturing the same |
| 04/24/2008 | WO2008047770A1 Resistance variable element |
| 04/24/2008 | US20080093686 Electromechanical non-volatile memory devices |
| 04/24/2008 | US20080093590 Phase change memory device and method of forming the same |
| 04/23/2008 | EP1914806A1 Variable resistor element and production method therefor and storage device provided with it |