| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 08/21/2008 | US20080197335 Semiconductor device and fabrications thereof |
| 08/21/2008 | US20080197334 Phase Change Memory Cell with Heater and Method for Fabricating the Same |
| 08/20/2008 | CN101246950A Memory element with reduced-current phase change element |
| 08/20/2008 | CN101246949A Non-volatile memory and its production method |
| 08/20/2008 | CN100413075C Memory device |
| 08/14/2008 | US20080192534 Memory element with reduced-current phase change element |
| 08/14/2008 | US20080191188 Multi bit phase-change random access memory devices and methods of forming the same |
| 08/14/2008 | US20080191187 Method for manufacturing a phase change memory device with pillar bottom electrode |
| 08/14/2008 | US20080191186 Phase change memory cell with filled sidewall memory element and method for fabricating the same |
| 08/13/2008 | CN101241967A Adhesive layer material for phase change memory and its making method |
| 08/13/2008 | CN101241966A Resistor random access memory cell device |
| 08/13/2008 | CN101241926A Programmable phase change material structure and its forming method |
| 08/13/2008 | CN101241925A Phase change memory device and its making method |
| 08/12/2008 | US7411208 Phase-change memory device having a barrier layer and manufacturing method |
| 08/12/2008 | US7410863 Methods of forming and using memory cell structures |
| 08/07/2008 | US20080185574 Method of forming non-volatile resistance variable devices |
| 08/07/2008 | US20080185570 Phase change material (pcm) memory devices with bipolar junction transistors and methods for making thereof |
| 08/07/2008 | DE102004016408B4 Phasenwechselspeicherbaustein und zugehöriges Programmierverfahren Phase change memory device and associated programming method |
| 08/06/2008 | EP1953842A2 Phase change memory device and method for fabricating the same |
| 08/06/2008 | EP1953824A1 Semiconductor device |
| 08/06/2008 | EP1952451A1 Reversible resistivity-switching metal oxide or nitride layer with added metal |
| 08/06/2008 | CN101238582A Variable resistor element and production method therefor and storage device provided with it |
| 08/06/2008 | CN101237029A Memory device |
| 08/06/2008 | CN101237026A Memory cell having a side electrode |
| 08/06/2008 | CN101237025A Nonvolatile memory devices and methods of fabricating the same |
| 08/06/2008 | CN101237024A Memory cell and its making method |
| 08/06/2008 | CN101236985A Memory cell device with coplanar electrode surface and method |
| 08/05/2008 | US7408235 Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities |
| 08/05/2008 | US7407829 Electrically programmable memory element with improved contacts |
| 08/05/2008 | US7407697 Information recording medium and method for manufacturing the same |
| 07/31/2008 | WO2008090963A1 Method for forming chalcogenide film and method for manufacturing recording element |
| 07/31/2008 | WO2008090621A1 Process for producing semiconductor memory device |
| 07/31/2008 | US20080179583 Fabrication of phase change memory element with phase-change electrodes using conformal deposition |
| 07/31/2008 | US20080179582 Phase change memory element and method of making the same |
| 07/30/2008 | CN101233625A Memory device with switching glass layer |
| 07/30/2008 | CN101232076A Method for eliminating CuxO resistance memory formation voltage |
| 07/30/2008 | CN101232075A Pillar phase change memory cell |
| 07/30/2008 | CN101232074A Semiconductor storage device and its making method |
| 07/30/2008 | CN100407440C 开关元件、驱动开关元件的方法、可重写的逻辑集成电路以及存储元件 Switching element, the driving method of the switching element, a rewritable logic integrated circuit and a memory element |
| 07/29/2008 | US7405967 Microelectronic programmable device and methods of forming and programming the same |
| 07/29/2008 | US7405418 Memory device electrode with a surface structure |
| 07/24/2008 | WO2008088599A2 Forced ion migration for chalcogenide phase change memory device |
| 07/24/2008 | US20080175042 Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device |
| 07/24/2008 | US20080174400 Magnetically-and electrically-induced variable resistance materials and method for preparing same |
| 07/24/2008 | US20080173862 Phase change memory device and method for forming the same |
| 07/24/2008 | US20080173860 Phase change memory device and method of fabricating the same |
| 07/23/2008 | EP1947696A1 Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same |
| 07/23/2008 | CN101226990A Oxide heat insulation layer for reducing phase-change memory cell power consumption and implementation method thereof |
| 07/23/2008 | CN101226989A Transition layer for phase-change memory |
| 07/23/2008 | CN101226988A Method for reducing CuxO resistance memory write operation current |
| 07/23/2008 | CN101226987A Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device |
| 07/23/2008 | CN101226951A Resistance random access memory |
| 07/23/2008 | CN101226771A Multilevel-cell memory structures employing multi-memory layers with tungsten oxides and manufacturing method |
| 07/23/2008 | CN100405629C Horizontal phase change memory and system with the same |
| 07/22/2008 | US7402851 Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same |
| 07/22/2008 | US7402456 PCMO thin film with memory resistance properties |
| 07/22/2008 | US7402455 Manufacturing method of a contact structure and phase change memory cell with elimination of double contacts |
| 07/17/2008 | WO2008084545A1 Semiconductor device |
| 07/17/2008 | US20080169459 Storage node of a resistive random access memory device and method of manufacturing the same |
| 07/17/2008 | US20080169458 Nonvolatile memory and fabrication method thereof |
| 07/17/2008 | US20080169457 Phase changeable memory devices including nitrogen and/or silicon |
| 07/16/2008 | CN101223642A Non-volatile memory |
| 07/16/2008 | CN101222020A Method of forming a phase change layer by electro-chemical deposition and manufacturing of a storage node and a phase change memory device using the method |
| 07/16/2008 | CN101222019A Electrolyte thin film (AgI)x(AgPO3)1-x based on amorphous solid and its preparing method |
| 07/16/2008 | CN101220463A Process for chemical vapor deposition of materials with via filling capability and structure formed thereby |
| 07/16/2008 | CN100402694C Integrated circuit device and fabrication using metal-doped chalcogenide materials |
| 07/10/2008 | WO2008081742A1 Resistance variable element, resistance variable storage device and resistance variable device |
| 07/10/2008 | WO2008081741A1 Resistance variable element and resistance variable storage device |
| 07/10/2008 | US20080166875 Thermally contained/insulated phase change memory device and method (combined) |
| 07/10/2008 | US20080166851 Metal-insulator-metal (mim) capacitor and method for fabricating the same |
| 07/10/2008 | US20080164456 Resistance variable memory device and method of fabrication |
| 07/10/2008 | US20080164454 Phase change memory device and method for fabricating the same |
| 07/10/2008 | US20080164452 Scaled-Down Phase Change Memory Cell in Recessed Heater |
| 07/09/2008 | EP1942534A2 Method of forming a phase change layer by electro-chemical deposition and manufacturing of a storage node and a phase change memory device using the method |
| 07/09/2008 | CN100401547C Electric device with phase change material and method of manufacturing the same |
| 07/09/2008 | CN100401546C Phase change memory and producing method thereof |
| 07/08/2008 | US7397688 Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor |
| 07/08/2008 | US7397092 Phase changable memory device structures |
| 07/08/2008 | US7397061 Lateral phase change memory |
| 07/08/2008 | US7396699 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry |
| 07/03/2008 | WO2008027135A3 Self-aligned, planar phase change memory elements and devices, systems employing the same and methods of forming the same |
| 07/03/2008 | US20080158940 Non-volatile memory device and method of operating the same |
| 07/03/2008 | US20080157238 Mems microphone module and method thereof |
| 07/03/2008 | US20080157054 Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same |
| 07/03/2008 | US20080157052 Resistance variable memory with temperature tolerant materials |
| 07/03/2008 | US20080157051 Nonvolatile Memory Cell with Concentric Phase Change Material Formed Around a Pillar Arrangement |
| 07/02/2008 | EP1939941A1 Switching element |
| 07/02/2008 | CN101212019A Resistance random access memory unit and method for producing the same |
| 07/02/2008 | CN101211959A Phase-change memory and fabrication method thereof |
| 07/02/2008 | CN100399599C Phase change memory cell on silicon-on insulator substrate and its fabrication method |
| 07/01/2008 | US7394090 Non-volatile memory and the fabrication method |
| 06/26/2008 | WO2007127014A3 Programming a normally single phase chalcogenide material for use as a memory or fpla |
| 06/26/2008 | US20080149913 Semiconductor memory device and method of manufacturing the same |
| 06/26/2008 | US20080149911 Programmable-resistance memory cell |
| 06/26/2008 | US20080149909 Pillar phase change memory cell |
| 06/26/2008 | US20080149908 Doped phase change material and pram including the same |
| 06/25/2008 | EP1936710A2 Pillar phase change memory cell |
| 06/25/2008 | CN101207180A Multi-layer electrode structure |
| 06/25/2008 | CN101207179A Memory cell and manufacturing method thereof |
| 06/25/2008 | CN101207178A Phase-change storage element and manufacturing method thereof |