Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
10/2008
10/23/2008US20080258259 Semiconductor chip and semiconductor device
10/23/2008US20080258129 Phase-Change Memory Device
10/22/2008CN101292350A Semiconductor device and manufacturing method thereof
10/22/2008CN101292299A Semi-conductor device
10/22/2008CN101290970A Rewritable electrical storage with inorganic thin film and preparing method thereof
10/22/2008CN101290969A Storage node and methods of forming the same, phase change memory device having a storage node and methods of fabricating and operating the same
10/22/2008CN101290968A Memory unit possessing side wall contact side electrode
10/22/2008CN101290967A Changing state of phase-change material by annealing
10/22/2008CN100428519C Method for the production of a memory cell, memory cell and memory cell arrangement
10/21/2008US7440990 Methods of factoring and modular arithmetic
10/16/2008WO2008124444A1 Methods to form wide heater trenches and to form memory cells to engage heaters
10/16/2008WO2008124328A2 Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
10/16/2008WO2008123307A1 Information recorder/reproducer
10/16/2008WO2008123139A1 Resistance memory element
10/16/2008DE102008016522A1 Phasenwechsel-Speichermaterial mit begrenztem Widerstand Phase change memory material with limited resistance
10/15/2008CN101288187A Reproducible resistance variable insulating memory devices and methods for forming same
10/15/2008CN101286547A Semiconductor structure and its manufacture method
10/15/2008CN101286546A Phase changeable storage device and its making method
10/15/2008CN100426417C 半导体存储装置 The semiconductor memory device
10/09/2008WO2008120126A1 An electronic device, and a method of operating an electronic device
10/09/2008US20080248624 Method of making integrated circuit (ic) including at least one storage cell
10/09/2008US20080247224 Phase Change Memory Bridge Cell with Diode Isolation Device
10/09/2008US20080247214 Integrated memory
10/09/2008US20080246015 Method to form high efficiency gst cell using a double heater cut
10/09/2008US20080246014 Memory Structure with Reduced-Size Memory Element Between Memory Material Portions
10/09/2008DE102007016066A1 Resistance switching element for switching between electrically high and low impedance states, has resistance switching area extending from one electrode to another electrode, where area comprises transition metal oxide nitride
10/08/2008CN101281953A Material with steady resistance-vary feature as well as resistance-vary memory
10/08/2008CN101281952A Material with steady resistance-vary feature as well as resistance-vary memory
10/08/2008CN101281951A Thin-film material and method for manufacturing non-volatility resistor random memory
10/08/2008CN101281923A Phase change memory cell with diode isolation device
10/02/2008WO2008117679A1 Variable resistance element and its manufacturing method, and electronic device
10/02/2008WO2008117494A1 Storage element and storage device
10/02/2008WO2008117455A1 Semiconductor device and process for producing the same
10/02/2008US20080237562 Phase change memory devices and fabrication methods thereof
10/01/2008EP1380050B1 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring
10/01/2008CN101276880A Storing unit and manufacturing method thereof
10/01/2008CN100423283C Novel channel structure phase change storage
10/01/2008CN100423232C Method for preparing nanoelectronic memory by electron beam exposure and mechanochemical polishing process
10/01/2008CN100423231C Preparation method of nanometer heating electrode of phase-change storage
09/2008
09/25/2008WO2008113734A1 Use of lacunar spinels with tetrahedral aggregates of a transition element of the of the am4x8 type in an electronic data rewritable non volatile memory, and corresponding material
09/25/2008US20080232160 Rectifying element for a crosspoint based memory array architecture
09/25/2008US20080230762 Phase change memory elements having a confined portion of phase change material on a recessed contact
09/24/2008CN101271961A Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same
09/24/2008CN101271960A Phase change layers and methods of forming the same, phase change memory devices and methods of manufacturing the same
09/24/2008CN101271959A Phase-change memory device
09/24/2008CN101271918A Phase change memory device
09/24/2008CN101271862A Memory element and manufacturing method thereof
09/24/2008CN100421276C On-chip electrically alterable resistor
09/23/2008US7427514 Passivated magneto-resistive bit structure and passivation method therefor
09/18/2008WO2008033332A3 Damascene metal-insulator-metal (mim) device with improved scaleability
09/18/2008US20080225571 Complementary bit PCRAM sense amplifier and method of operation
09/18/2008US20080224734 Multi-terminal chalcogenide logic circuits
09/18/2008US20080224120 Phase change device with offset contact
09/18/2008US20080224117 Semiconductor memory device and method of manufacturing the same
09/18/2008US20080224116 Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element
09/17/2008EP1969649A2 Phase change current density control structure
09/17/2008CN101268564A Phase change memory cell and method of formation
09/17/2008CN101267017A A tube phase change memory unit structure and its making method
09/17/2008CN101267016A Improved phase change memory unit component structure
09/17/2008CN100419906C Memory cell
09/16/2008US7425720 Semiconductor device
09/12/2008WO2008108822A2 Electrically actuated switch
09/11/2008US20080220560 Programmable resistance memory element and method for making same
09/11/2008US20080217600 Multi-level data memorisation device with phase change material
09/10/2008EP1968117A2 Device for multi-level data memorisation with phase-changing material
09/10/2008EP1966841A1 A vertical phase change memory cell and methods for manufacturing thereof
09/10/2008CN100418245C Manufacturing methods for thin film fuse phase change ram
09/10/2008CN100418244C Thin film fuse phase change ram and manufacturing method
09/09/2008US7422917 Forming tapered lower electrode phase-change memories
09/04/2008US20080212362 Control of set/reset pulse in response to peripheral temperature in pram device
09/04/2008US20080210925 Three-terminal cascade switch for controlling static power consumption in integrated circuits
09/04/2008US20080210924 Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the same
09/04/2008US20080210923 Semiconductor device and method of manufacturing the same
09/04/2008DE102004025615B4 Verfahren zum Herstellen einer Festkörperelektrolytspeicherzelle A method of manufacturing a solid electrolyte storage cell
09/03/2008EP1965426A1 Electric element, memory device and semiconductor integrated circuit
09/03/2008CN101257090A Si-Te-Sb series phase-change thin film material for phase-change memory
09/03/2008CN101257089A Resistive random access memory and manufacturing method for the same
09/03/2008CN101257088A Memory element and semiconductor device, and method for manufacturing the same
09/03/2008CN101257087A Phase change memory cell with filled sidewall memory element and method for fabricating the same
09/03/2008CN101257086A Memory device with ring-shaped upper end of bottom electrode and manufacturing method thereof
09/03/2008CN101257085A Phase change memory
09/03/2008CN101257084A Phase change memory and manufacturing method thereof
09/03/2008CN101257083A Phase change memory and manufacturing method thereof
09/02/2008US7420200 Damascene phase change memory
08/2008
08/28/2008WO2008102718A1 Semiconductor memory device
08/28/2008WO2008026081A3 Method for manufacturing a resistive switching device and devices obtained thereof
08/28/2008US20080206931 Nonvolatile memory element and production method thereof and storage memory arrangement
08/28/2008US20080206922 Methods for Fabricating Multi-Terminal Phase Change Devices
08/28/2008US20080206921 Methods of forming phase changeable layers including protruding portions in electrodes thereof
08/28/2008US20080205128 Phase change memory device
08/28/2008US20080205127 Phase change storage cells for memory devices
08/28/2008US20080203379 Array of vertical bipolar junction transistors, in particular selectors in a phase change memory device
08/28/2008US20080203374 Phase-change memory and fabrication method thereof
08/28/2008DE102006011461B4 Elektrische Struktur mit einer Festkörperelektrolytschicht, programmierbare Struktur, Speicher mit einer Speicherzelle und Verfahren zum Herstellen der elektrischen Struktur Electrical structure having a solid electrolyte layer, programmable structure memory having a memory cell and method for manufacturing the electrical structure
08/27/2008CN101252170A Full epitaxial electric resistance changing to multi-layer films based on silicon substrate, method and application thereof
08/27/2008CN101252169A Phase change memory device and method of fabricating the same
08/27/2008CN101252168A Phase change memory cell with heater and method for fabricating the same
08/27/2008CN101252167A Programmable resistive memory cell with self-forming gap
08/27/2008CN100414734C Polymer material having carrier transport property, and organic thin film element, electronic device, and conductor line which use same
08/21/2008US20080197336 Nonvolatile memory devices and methods of forming the same
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