Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
12/2008
12/24/2008EP2005494A1 Electric device with phase change resistor
12/24/2008CN101330128A Organic non-volatile memory material and memory device
12/24/2008CN101330127A Switching element
12/24/2008CN101330126A Phase variation storage unit structure and method for manufacturing the same
12/24/2008CN101330092A Phase-changing storage device and manufacture method thereof
12/24/2008CN101330091A Phase-changing storage device and manufacture method thereof
12/18/2008WO2008153099A1 Information recording/reproducing device
12/18/2008WO2008153006A1 Information recording/reproducing device
12/18/2008WO2008152908A1 Resistive element, neuron element, and neural network information processing apparatus
12/18/2008WO2008129480A3 An electronic component, and a method of manufacturing an electronic component
12/18/2008WO2008129477A3 An electronic device comprising a convertible structure
12/18/2008WO2008124328A3 Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
12/18/2008US20080308785 Phase change memory device and method of forming the same
12/18/2008US20080308784 Variable resistance non-volatile memory cells and methods of fabricating same
12/17/2008EP2003678A2 Structures based on nanoparticles and method for their fabrication
12/17/2008EP2002491A1 Reduced power consumption phase change memory and methods for forming the same
12/17/2008CN101325245A Electronics module, method for the manufacture thereof and applications
12/17/2008CN101325244A Structures based on nanoparticles and method for their fabrication
12/17/2008CN101325212A Semiconductor memory structures
12/11/2008WO2008149808A1 Switch circuit and semiconductor integrated circuit
12/11/2008WO2008149605A1 Variable resistance element and semiconductor device comprising the same
12/11/2008WO2008149484A1 Nonvolatile storage element, its manufacturing method, and nonvolatile semiconductor device using the nonvolatile storage element
12/11/2008US20080304311 Integrated circuit including logic portion and memory portion
12/11/2008US20080303016 Phase change memory devices employing cell diodes and methods of fabricating the same
12/11/2008US20080303014 Vertical Phase Change Memory Cell and Methods For Manufacturing Thereof
12/10/2008EP2001053A2 Electronics module, method for the manufacture thereof and applications
12/10/2008EP0947005B1 Composite memory material comprising a mixture of phase-change memory material and dielectric material
12/10/2008CN101320784A Write-Once Read-Many electric storage member and preparation method thereof
12/10/2008CN101320783A Phase variation memory
12/10/2008CN100442566C Phase-change storage and its manufacturing method
12/10/2008CN100442390C Forming phase change memories
12/10/2008CN100442389C Method and system to store information
12/09/2008US7463506 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
12/09/2008US7462900 Phase changeable memory devices including nitrogen and/or silicon
12/09/2008US7462857 Memory device including resistance-changing function body
12/04/2008WO2008147595A1 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
12/04/2008WO2008146461A1 Nonvolatile storage device, method for manufacturing the same, and nonvolatile semiconductor device using the nonvolatile storage device
12/04/2008WO2008146243A2 An electronic device comprising a convertible structure, and a method of manufacturing an electronic device
12/04/2008US20080296554 Phase change memory devices and fabrication methods thereof
12/04/2008US20080296551 Resistance memory element and method of manufacturing the same
12/03/2008EP1998384A1 Resistive random access memory device
12/03/2008CN101315970A Storage medium material
12/03/2008CN101315969A Resistor memory with doping control layer
12/03/2008CN101315942A Resistive random access memory device
12/03/2008CN100440486C Manufacturing method for phase change ram with electrode layer process
12/02/2008US7459764 Method of manufacture of a PCRAM memory cell
12/02/2008US7459762 Programmable resistance memory element with threshold switching material
12/02/2008US7459336 Method of forming a chalcogenide material containing device
12/02/2008US7459266 Insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer
11/2008
11/27/2008WO2008144173A1 Variable resistance memory device having reduced bottom contact area and method of forming the same
11/27/2008WO2008142919A1 Variable resistive element, method for manufacturing the variable resistive element and nonvolatile semiconductor storage device
11/27/2008WO2008142768A1 Semiconductor device and process for producing the same
11/27/2008US20080293183 Phase change memory and manufacturing method thereof
11/26/2008CN101313423A Memory cell comprising nickel-cobalt oxide switching element
11/26/2008CN101313422A Reversible resistivity-switching metal oxide or nitride layer with added metal
11/26/2008CN101313406A Semiconductor device
11/26/2008CN101312232A Spin torque transfer mram device
11/26/2008CN101312231A Phase change memorizer apparatus and method of manufacture
11/26/2008CN101312230A Phase change storage apparatus and method of manufacture
11/26/2008CN100438116C Thin film phase-change memory
11/20/2008WO2008078197A3 Method for controlled formation of the resistive switching material in a resistive switching device and devices obtained thereof
11/20/2008US20080285333 Electric Device Comprising Phase Change Material
11/20/2008US20080285328 Phase Change Memory
11/20/2008US20080283812 Phase-change memory element
11/19/2008CN101308903A Phase-change memory element
11/19/2008CN101308902A Phase changeable storage device and manufacture method thereof
11/19/2008CN100435374C Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
11/19/2008CN100435373C Semiconductor memory device and method of fabricating the same
11/18/2008US7453082 Small electrode for a chalcogenide switching device and method for fabricating same
11/13/2008US20080277644 Switch array circuit and system using programmable via structures with phase change materials
11/13/2008US20080277642 Fabrication of Phase-Change Resistor Using a Backend Process
11/06/2008WO2008132899A1 Resistance change element and semiconductor device including it
11/06/2008WO2008132701A1 Non-volatile memory device
11/06/2008US20080274585 Spacer electrode small pin phase change memory ram and manufacturing method
11/06/2008US20080273370 Integrated Circuit, Method of Operating an Integrated Circuit, Memory Cell Array, and Memory Module
11/06/2008US20080272357 Phase Changeable Memory Device Structures
11/05/2008CN101300689A 增加相变存储器列平台裕量 Increase the phase-change memory column platform margin
11/05/2008CN101299454A Method for preparing nano composite phase-changing material
11/05/2008CN101299453A Nano composite phase-changing material and preparation method thereof
11/04/2008US7447092 Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperature
11/04/2008US7446393 Co-sputter deposition of metal-doped chalcogenides
10/2008
10/30/2008WO2008129480A2 An electronic component, and a method of manufacturing an electronic component
10/30/2008WO2008129477A2 An electronic device comprising a convertible structure
10/30/2008US20080268568 Material sidewall deposition method
10/30/2008US20080265285 Microelectronic programmable device and methods of forming and programming the same
10/30/2008US20080265240 Memory device with improved performance
10/30/2008US20080265239 Integrated circuit including spacer material layer
10/30/2008US20080265238 Phase change memory devices and methods for manufacturing the same
10/30/2008US20080265236 Variable resistance non-volatile memory cells and methods of fabricating same
10/30/2008US20080265234 Method of Forming Phase Change Memory Cell With Reduced Switchable Volume
10/29/2008EP1986246A1 Switching device, rewritable logic integrated circuit, and memory device
10/29/2008EP1922743A4 Method and system of using nanotube fabrics as joule heating elements for memories and other applications
10/29/2008CN101295764A Memory device production method and phase change layer etching method
10/29/2008CN101295763A Resistive memory device and stack structure of resistive random access memory device
10/29/2008CN101295729A Integrated circuit including spacer material layer
10/28/2008US7442605 Resistively switching memory
10/23/2008WO2008127866A1 Resistive memory cell fabrication methods and devices
10/23/2008WO2008126366A1 Variable resistance element, nonvolatile switching element, and variable resistance memory device
10/23/2008WO2008126365A1 Nonvolatile memory device, nonvolatile memory element, and nonvolatile memory element array
10/23/2008US20080259672 4f2 self align side wall active phase change memory
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