| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 02/19/2009 | US20090045386 Phase-change memory element |
| 02/18/2009 | CN101369629A Solid electrolyte silver germanium oxygen thin film and preparation method and use thereof |
| 02/18/2009 | CN101369628A Phase-change memory element |
| 02/18/2009 | CN101369627A Solid state electrolyte memory element and manufacturing method thereof |
| 02/18/2009 | CN101369597A Multi-level memory cell having phase change element and asymmetrical thermal boundary |
| 02/18/2009 | CN100463209C Phase change memory element with vacuum jacket |
| 02/18/2009 | CN100463137C Surface structure used for embolism surface |
| 02/17/2009 | US7491963 Non-volatile memory structure |
| 02/12/2009 | WO2009020210A1 Switching element and application of the same |
| 02/12/2009 | WO2009020041A1 Memory element and memory device |
| 02/12/2009 | WO2008124328A4 Memory devices having electrodes comprising nanowires, systems including same and methods of forming same |
| 02/12/2009 | US20090039338 Phase change memory devices and fabrication methods thereof |
| 02/12/2009 | US20090039336 Semiconductor device |
| 02/12/2009 | US20090039335 Semiconductor device and manufacturing method of the same |
| 02/12/2009 | US20090039334 Phase-change memory device and method for manufacturing the same |
| 02/12/2009 | US20090039333 Phase change memory device and method for manufacturing the same |
| 02/12/2009 | DE102008034007A1 Phasenänderungsspeicher mit Schottky-Diode und Verfahren zum Herstellen desselben Phase change memory thereof with Schottky diode and methods for making |
| 02/11/2009 | EP2023393A1 Semiconductor device |
| 02/11/2009 | EP1425431B1 Integrated circuit device and fabrication using metal-doped chalcogenide materials |
| 02/11/2009 | CN101364634A Semiconductor device |
| 02/11/2009 | CN101364633A Phase changing memory element and manufacturing method therefor |
| 02/11/2009 | CN100461485C Current-limiting device based on sulfur series compound phase-change material and method for making the same |
| 02/11/2009 | CN100461484C Phase transformation memory storing unit and producing method thereof |
| 02/11/2009 | CN100461483C Method for reducing heating electrode area of phase-change memory |
| 02/11/2009 | CN100461482C Switching element, line-switching device and logic circuit |
| 02/11/2009 | CN100461417C 半导体存储装置及其制造方法 The semiconductor memory device and manufacturing method thereof |
| 02/10/2009 | US7488981 Memory devices having sharp-tipped phase change layer patterns |
| 02/05/2009 | US20090033360 Programmable via devices with air gap isolation |
| 02/05/2009 | US20090033358 Programmable via devices in back end of line level |
| 02/05/2009 | US20090032795 Schottky diode and memory device including the same |
| 02/05/2009 | US20090032793 Resistor Random Access Memory Structure Having a Defined Small Area of Electrical Contact |
| 02/04/2009 | CN101359718A Phase change memory device and method of fabricating the same |
| 02/04/2009 | CN101359717A Resistor random access memory structure having a defined small area of electrical contact |
| 02/03/2009 | US7485891 Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory |
| 02/03/2009 | US7484546 Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target |
| 01/29/2009 | WO2008146243A3 An electronic device comprising a convertible structure, and a method of manufacturing an electronic device |
| 01/29/2009 | US20090026438 Solid state electrolyte memory device and method of fabricating the same |
| 01/29/2009 | US20090026437 Copper compatible chalcogenide phase change memory with adjustable threshold voltage |
| 01/29/2009 | DE102004026002B4 Halbleiterbauelement mit Festkörperelektrolytspeicherzellen und Herstellungsverfahren A semiconductor device having solid electrolyte memory cells and manufacturing processes |
| 01/28/2009 | CN101355137A Phase-changing storage device and manufacture method thereof |
| 01/28/2009 | CN100456513C Phase changeable memory cells and methods of forming the same |
| 01/28/2009 | CN100456512C Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same |
| 01/22/2009 | US20090023242 Vacuum jacket for phase change memory element |
| 01/22/2009 | US20090020746 Self-aligned structure and method for confining a melting point in a resistor random access memory |
| 01/22/2009 | US20090020744 Stacked multilayer structure and manufacturing method thereof |
| 01/22/2009 | US20090020743 Semiconductor structure, in particular phase change memory device having a uniform height heater |
| 01/22/2009 | US20090020742 Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit |
| 01/21/2009 | EP2017906A1 Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element |
| 01/21/2009 | CN101351888A Electric element, memory device and semiconductor integrated circuit |
| 01/21/2009 | CN100454600C Non-volatile memory element and production method thereof and storage memory arrangement |
| 01/20/2009 | US7479650 Method of manufacture of programmable conductor memory |
| 01/20/2009 | US7479212 Method of manufacturing high-density data storage medium |
| 01/15/2009 | WO2009008931A2 Inverted variable resistance memory cell and method of making the same |
| 01/15/2009 | US20090017577 Methods of Forming Phase Change Memory Devices Having Bottom Electrodes |
| 01/15/2009 | US20090016094 Selection device for Re-Writable memory |
| 01/15/2009 | US20090014710 Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof |
| 01/15/2009 | US20090014708 Semiconductor device |
| 01/15/2009 | US20090014707 Non-volatile solid state resistive switching devices |
| 01/15/2009 | US20090014706 4f2 self align fin bottom electrodes fet drive phase change memory |
| 01/14/2009 | EP2015357A1 Process for manufacturing an array of cells including selection bipolar junction transistors with projecting conduction regions |
| 01/14/2009 | CN101345289A Semiconductor device |
| 01/14/2009 | CN101345288A Preparation method of CuxO resistor random memory |
| 01/13/2009 | US7476917 Phase-changeable memory devices including nitrogen and/or silicon dopants |
| 01/08/2009 | WO2009005699A1 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| 01/08/2009 | WO2009005614A2 3d r/w cell with diode and resistive semiconductor element and method of making thereof |
| 01/08/2009 | US20090008622 Phase Change Memory Devices and Methods of Fabricating the Same |
| 01/08/2009 | US20090008621 Phase-change memory element |
| 01/07/2009 | CN101339973A Reverse bias voltage induced double stable state nonvolatile semiconductor memory |
| 01/07/2009 | CN100449647C Programming a phase-change material memory |
| 01/07/2009 | CN100449644C Multiple data state memory cell |
| 01/06/2009 | US7473574 Memory element with improved contacts |
| 01/02/2009 | DE102004015899B4 Herstellungsverfahren für ein PCM-Speicherelement Production method of a PCM memory element |
| 01/01/2009 | US20090004773 Methods of fabricating multi-layer phase-changeable memory devices |
| 01/01/2009 | US20090003045 Cmos-process-compatible programmable via device |
| 01/01/2009 | US20090003032 Integrated circuit including resistivity changing material having a planarized surface |
| 01/01/2009 | US20090001348 Semiconductor device |
| 01/01/2009 | US20090001347 3D R/W cell with reduced reverse leakage |
| 01/01/2009 | US20090001345 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
| 01/01/2009 | US20090001344 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| 01/01/2009 | US20090001343 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
| 01/01/2009 | US20090001341 Phase Change Memory with Tapered Heater |
| 01/01/2009 | US20090001340 Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
| 01/01/2009 | US20090001339 Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
| 01/01/2009 | US20090001336 Phase change material based temperature sensor |
| 12/31/2008 | WO2009001262A1 Electric device comprising phase change material and heating element |
| 12/31/2008 | WO2009001261A1 An electronic device, and a method of manufacturing an electronic device |
| 12/31/2008 | WO2008108822A3 Electrically actuated switch |
| 12/31/2008 | CN101335330A Resistance memory with tungsten compound and manufacturing |
| 12/31/2008 | CN101335329A Construction for enhancing reliability of phase-change memory storage unit and manufacturing method thereof |
| 12/31/2008 | CN101335328A Phase-change memory device unit construction and manufacturing method thereof |
| 12/31/2008 | CN101335327A Method for controlling phase-change material or phase-change memory unit volume change and corresponding construction |
| 12/31/2008 | CN101335326A Electrically inducted resistor material for resistor type memory and preparing method thereof |
| 12/31/2008 | CN100448049C Electric device comprising solid electrolyte |
| 12/25/2008 | US20080316794 Integrated circuit having multilayer electrode |
| 12/25/2008 | US20080315170 Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities |
| 12/24/2008 | WO2008155724A1 An electronic component, and a method of manufacturing an electronic component |
| 12/24/2008 | WO2008155251A1 Solution-processed solid electrolytic layer device and fabrication |
| 12/24/2008 | EP2006928A2 Switching element |
| 12/24/2008 | EP2006912A2 Memory element array comprising a switching element with a nanogap and a tunnel element |
| 12/24/2008 | EP2005495A2 Phase change memory elements using self- aligned phase change material layers and methods of making and using same |