| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 04/22/2009 | CN100481554C Chalcogenide-applied memory and fabricating method thereof |
| 04/22/2009 | CN100481553C Memory cell and method of forming the same, memory cell array and operating method thereof |
| 04/22/2009 | CN100481552C Phase transfer element and fabricating method thereof, and phase transfer memory cell |
| 04/21/2009 | US7521706 Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same |
| 04/21/2009 | US7521704 Memory device using multi-layer with a graded resistance change |
| 04/21/2009 | US7521372 Method of fabrication of phase-change memory |
| 04/16/2009 | US20090098717 Co-sputter deposition of metal-doped chalcogenides |
| 04/16/2009 | US20090098678 Vacuum jacketed electrode for phase change memory element |
| 04/16/2009 | US20090095953 Phase change materials and associated memory devices |
| 04/16/2009 | US20090095952 Storage node, phase change memory device and methods of operating and fabricating the same |
| 04/16/2009 | US20090095950 Nanoscale Wire-Based Data Storage |
| 04/16/2009 | US20090095949 Low Area Contact Phase-Change Memory |
| 04/15/2009 | EP2048713A2 Multi-layer electrode, cross point memory array and method of manufacturing the same |
| 04/15/2009 | CN101409327A Resistive memory structure with buffer layer |
| 04/15/2009 | CN101409303A Multi-layer electrode and cross point memory array |
| 04/15/2009 | CN100479219C Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same |
| 04/15/2009 | CN100479057C Nonvolatile semiconductor memory device and control method thereof |
| 04/14/2009 | US7518212 Graded GexSe100-x concentration in PCRAM |
| 04/09/2009 | WO2009044769A1 Chalcogenide film and method for producing the same |
| 04/09/2009 | WO2009008931A3 Inverted variable resistance memory cell and method of making the same |
| 04/09/2009 | US20090090899 Phase change memory device and method of manufacturing the same |
| 04/09/2009 | DE10297115B4 Mehrlagiger Phasenübergangsspeicher, insbesondere Speicherzelle und Verfahren zur Herstellung Multi-layer phase transition memory, in particular memory cell and method for producing |
| 04/08/2009 | CN101405883A Reduced power consumption phase change memory and methods for forming the same |
| 04/08/2009 | CN100477318C Phase change film material of silicon-adulterated sulfur series for phase change memory |
| 04/08/2009 | CN100477317C A chalcogenide memory cell having a horizontal electrode and method for forming same |
| 04/08/2009 | CN100477225C Electro-resistance element and method of manufacturing the same |
| 04/07/2009 | US7514704 Phase-change memory device and method of manufacturing the same |
| 04/02/2009 | WO2009043023A2 Electronic switching, memory, and sensor devices from carbon sheets on dielectric materials |
| 04/02/2009 | WO2009041041A1 Nonvolatile memory element, nonvolatile semiconductor storage device, and method for reading data from the memory element and storage device and method for writing data in the memory element and storage device |
| 04/02/2009 | US20090087945 Phase change memory cell with roundless micro-trenches |
| 04/02/2009 | US20090085025 Memory device including resistance-changing function body |
| 04/02/2009 | US20090085023 Phase change memory structures |
| 04/01/2009 | EP1480209B1 Method for producing a sputtering target |
| 04/01/2009 | CN101399314A Phase-changing storage device and manufacture method thereof |
| 04/01/2009 | CN100474448C Phase random access memory with high density |
| 03/26/2009 | WO2009039187A1 Tellurium precursors for gst film deposition |
| 03/26/2009 | WO2009038032A1 Variable resistance element and semiconductor storage device |
| 03/26/2009 | WO2009005614A3 3d r/w cell with diode and resistive semiconductor element and method of making thereof |
| 03/26/2009 | US20090081825 Phase change memory device and method for fabricating |
| 03/26/2009 | US20090079009 Memory device, memory circuit and semiconductor integrated circuit having variable resistance |
| 03/26/2009 | US20090078926 Phase change memory device and fabrication method thereof |
| 03/26/2009 | US20090078925 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication |
| 03/26/2009 | US20090078924 Phase Change Memory with Various Grain Sizes |
| 03/25/2009 | CN101395717A Resistance-varying type element, semiconductor device, and method for manufacturing the element |
| 03/25/2009 | CN101393965A Phase change memory device and methods of fabricating the same |
| 03/25/2009 | CN101393964A Phase change memory with various grain sizes and forming method thereof |
| 03/24/2009 | US7507985 Phase change memory and phase change recording medium |
| 03/19/2009 | US20090075420 Method of forming chalcogenide layer including te and method of fabricating phase-change memory device |
| 03/19/2009 | US20090072216 Phase change memory cell array with self-converged bottom electrode and method for manufacturing |
| 03/19/2009 | US20090072215 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing |
| 03/19/2009 | US20090072214 Phase-change memory cell and method of fabricating the phase-change memory cell |
| 03/18/2009 | EP2036140A1 Phase change alloy etch |
| 03/18/2009 | EP2036131A1 Programmable mit sensor using the abrupt mit device, and alarm apparatus and secondary battery anti-explosion circuit including the mit sensor |
| 03/18/2009 | CN101390212A One-time programmable crosspoint memory with a diode as an antifuse |
| 03/18/2009 | CN101388435A Resistive random access memory and method for manufacturing the same |
| 03/18/2009 | CN100470871C Phase change memory devices with reduced programming current |
| 03/18/2009 | CN100470870C Low current and high speed phase change storage device and method for driving same |
| 03/18/2009 | CN100470869C Method for forming multiple layer phase-change memory and memory unit |
| 03/18/2009 | CN100470823C Semiconductor memorizer |
| 03/18/2009 | CN100470666C Phase-change memory and manufacturing method thereof |
| 03/17/2009 | US7504730 Memory elements |
| 03/12/2009 | WO2009031086A1 An electronic component, and a method of manufacturing an electronic component |
| 03/12/2009 | US20090065760 Resistive memory devices and methods of forming resistive memory devices |
| 03/12/2009 | US20090065759 Semiconductor device and method for fabricating the same |
| 03/12/2009 | US20090065758 Phase change memory array and fabrication thereof |
| 03/12/2009 | US20090065757 Nonvolatile Memory Element |
| 03/12/2009 | DE102004040751B4 Resistiv schaltende nicht-flüchtige Speicherzelle auf der Basis von Alkali-Ionendrift, Verfahren zur Herstellung und Verwendung einer Verbindung zur Herstellung Resistive-switching non-volatile memory cell based on alkali metal ion drift, process for the preparation and use of a compound for the preparation of |
| 03/11/2009 | EP2034536A1 Phase change memory device for multibit storage |
| 03/11/2009 | CN101383398A Application of stibium containing material as resistor converting storage medium |
| 03/11/2009 | CN101383397A Phase change memory device and fabrication method thereof |
| 03/11/2009 | CN101383337A Programmable fuse/non-volatile memory structures in beol regions using externally heated phase change material |
| 03/11/2009 | CN100468808C Storage device |
| 03/11/2009 | CN100468740C 半导体器件及其驱动方法 Semiconductor device and its driving method |
| 03/10/2009 | US7501307 Method of fabricating semiconductor memory device |
| 03/05/2009 | WO2009028250A1 Solid memory |
| 03/05/2009 | WO2009028249A1 Solid memory |
| 03/05/2009 | US20090057645 Memory element with improved contacts |
| 03/05/2009 | US20090057644 Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devices |
| 03/05/2009 | US20090057643 Phase change memory device and fabrication method thereof |
| 03/05/2009 | US20090057641 Phase Change Memory Cell With First and Second Transition Temperature Portions |
| 03/05/2009 | DE102004029436B4 Verfahren zum Herstellen eines Festkörperelektrolytmaterialbereichs A method for producing a solid electrolyte material region |
| 03/03/2009 | US7498231 Multiple data state memory cell |
| 02/26/2009 | WO2009025037A1 Resistance variable element |
| 02/26/2009 | WO2009005908A3 Triodes using nanofabric articles and methods of making the same |
| 02/26/2009 | US20090053886 High density chalcogenide memory cells |
| 02/26/2009 | US20090050873 System Including Memory with Resistivity Changing Material and Method of Making the Same |
| 02/26/2009 | US20090050872 Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element |
| 02/26/2009 | US20090050869 Phase-change random access memory and method of manufacturing the same |
| 02/25/2009 | EP2028693A2 Switching element, method of manufacturing the switching element, and memory element array |
| 02/25/2009 | EP1738421B1 Layered resistance variable memory device and method of fabrication |
| 02/25/2009 | CN101373814A Phase variation memory and manufacturing method thereof |
| 02/24/2009 | US7494922 Small electrode for phase change memories |
| 02/24/2009 | US7494849 Methods for fabricating multi-terminal phase change devices |
| 02/19/2009 | WO2009022693A1 Storage device drive method |
| 02/19/2009 | WO2006001942A3 Electronic isolation device |
| 02/19/2009 | US20090046498 Integrated circuit including memory having reduced cross talk |
| 02/19/2009 | US20090045474 MEMS sensor and production method of MEMS sensor |
| 02/19/2009 | US20090045390 Multi-resistive state memory device with conductive oxide electrodes |
| 02/19/2009 | US20090045388 Phase change material structure and related method |
| 02/19/2009 | US20090045387 Resistively switching semiconductor memory |