| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 06/17/2009 | CN100502081C Phase change memory device and manufacturing method |
| 06/17/2009 | CN100502080C Memory and method for manufacturing memory device |
| 06/17/2009 | CN100502010C Memory device using multi-layer with a graded resistance change |
| 06/16/2009 | US7547905 Programmable conductor memory cell structure and method therefor |
| 06/11/2009 | WO2009072213A1 Resistance change-type memory device, nonvolatile memory device, and method for manufacturing them |
| 06/11/2009 | WO2009072201A1 Resistance change element, method for manufacturing the resistance change element, and semiconductor storage device using the resistance change element |
| 06/11/2009 | US20090149006 Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions |
| 06/11/2009 | US20090148980 Method for forming phase-change memory element |
| 06/11/2009 | US20090146131 Integrated Circuit, and Method for Manufacturing an Integrated Circuit |
| 06/11/2009 | US20090146129 Multi-bit memory cell structure and method of manufacturing the same |
| 06/11/2009 | US20090146128 electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same |
| 06/10/2009 | CN101454919A Electric device with phase change resistor |
| 06/10/2009 | CN101452994A Non-volatile memory element and preparation method thereof |
| 06/10/2009 | CN101452993A Phase changing memory element and manufacturing method therefor |
| 06/10/2009 | CN101452992A Phase changing storage device and its making method |
| 06/04/2009 | WO2009069690A1 Memory cell |
| 06/04/2009 | WO2009069365A1 Semiconductor memory device |
| 06/04/2009 | WO2009069364A1 Semiconductor memory device |
| 06/04/2009 | WO2009069252A1 Nonvolatile storage device and method for manufacturing the same |
| 06/04/2009 | WO2006078505A3 A non-volatile memory cell comprising a dielectric layer and a phase change material in series |
| 06/04/2009 | US20090140233 Nonvolatile semiconductor memory device |
| 06/04/2009 | US20090140232 Resistive Memory Element |
| 06/04/2009 | US20090140231 Semiconductor device and method of manufacturing the same |
| 06/04/2009 | US20090140230 Memory Cell Device With Circumferentially-Extending Memory Element |
| 06/04/2009 | US20090140229 Active material devices with containment layer |
| 06/03/2009 | EP2064756A2 Damascene metal-insulator-metal (mim) device with improved scaleability |
| 06/03/2009 | EP2064732A1 Semiconductor device and method for manufacturing the same |
| 06/03/2009 | CN101447551A Structure of phase change memory cell and implementation method thereof |
| 06/03/2009 | CN100495756C Phase change memory and its forming method |
| 06/02/2009 | US7542319 Chalcogenide glass constant current device, and its method of fabrication and operation |
| 05/28/2009 | WO2009066500A1 Semiconductor device configuration method |
| 05/28/2009 | US20090137080 Phase change memory device and method for manufacturing the same |
| 05/28/2009 | US20090134379 Phase-change nonvolatile memory and manufacturing method therefor |
| 05/27/2009 | EP2063467A1 Nonvolatile storage element, its manufacturing method, and nonvolatile semiconductor device using the nonvolatile storage element |
| 05/27/2009 | EP2062995A1 Amorphous Ge/Te deposition process |
| 05/27/2009 | EP2062307A2 Method for controlled formation of the resistive switching material in a resistive switching device and devices obtained thereof |
| 05/27/2009 | EP2062306A2 Method for manufacturing a resistive switching device and devices obtained thereof |
| 05/27/2009 | EP2062305A2 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
| 05/27/2009 | CN101442103A Phase change memory device for multibit storage |
| 05/27/2009 | CN100492696C Electrically rewritable non-volatile memory element and method of manufacturing the same |
| 05/27/2009 | CN100492695C Method for preparing phase shift storage by silicon wet etching and keying process |
| 05/27/2009 | CN100492694C Phase change merhory and method with recovery function |
| 05/26/2009 | US7538338 Memory using variable tunnel barrier widths |
| 05/22/2009 | WO2009064842A1 Vertically-stacked electronic devices having conductive carbon films |
| 05/22/2009 | WO2009063950A1 Chalcogenide film and method for producing the same |
| 05/22/2009 | WO2009063645A1 Nonvolatile memory device and manufacturing method therefor |
| 05/21/2009 | US20090130797 Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materials |
| 05/21/2009 | US20090127536 Integrated circuit having dielectric layer including nanocrystals |
| 05/20/2009 | EP2059956A2 Programmable resistance memory devices and systems using the same and methods of forming the same |
| 05/20/2009 | CN101436643A Phase change memory cell including a thermal protect bottom electrode and manufacturing methods |
| 05/20/2009 | CN101436570A Method for preparing phase-change memory |
| 05/20/2009 | CN101436546A Method for altering oxide material physical properties |
| 05/19/2009 | US7535070 Spin-wave architectures |
| 05/19/2009 | US7535035 Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer and methods of fabricating the same |
| 05/19/2009 | US7534713 High density chalcogenide memory cells |
| 05/14/2009 | US20090121212 Small electrode for phase change memories |
| 05/14/2009 | US20090121211 Solution-Based Deposition Process for Metal Chalcogenides |
| 05/14/2009 | US20090121210 Formation of self-assembled monolayers on silicon substrates |
| 05/14/2009 | US20090121209 Semiconductor device with tunable energy band gap |
| 05/13/2009 | CN101432878A Variable resistance element, and its manufacturing method |
| 05/13/2009 | CN101431144A Method for producing self-isolation resistor transformation type memory unit |
| 05/12/2009 | US7531823 Electron device, integrated electron device using same, and operating method using same |
| 05/07/2009 | WO2009057262A1 Nonvolatile semiconductor storage device and method for manufacturing the same |
| 05/07/2009 | WO2009057211A1 Semiconductor device and its manufacturing method |
| 05/07/2009 | US20090116277 Nano-electronic memory array |
| 05/07/2009 | US20090114900 Semiconductor light-emitting diode |
| 05/07/2009 | US20090114898 Method and apparatus for reducing programmed volume of phase change memory |
| 05/06/2009 | CN101427396A Programming a normally single phase chalcogenide material for use as a memory or fpla |
| 05/06/2009 | CN101425559A Resistor conversion type memory and producing method thereof |
| 05/05/2009 | US7529123 Method of operating a multi-terminal electronic device |
| 05/05/2009 | US7528456 Nano-scale computational architectures with spin wave bus |
| 05/05/2009 | US7528405 Conductive memory stack with sidewall |
| 05/05/2009 | US7528401 Agglomeration elimination for metal sputter deposition of chalcogenides |
| 04/30/2009 | US20090111212 Method and apparatus for chalcogenide device formation |
| 04/30/2009 | US20090108249 Phase Change Memory with Diodes Embedded in Substrate |
| 04/30/2009 | US20090108248 Integrated circuit including doped semiconductor line having conductive cladding |
| 04/30/2009 | US20090108247 Memory Device |
| 04/29/2009 | CN101420013A Resistor conversion memory cell |
| 04/29/2009 | CN101420012A Non-volatile resistor transition type memory embedded into nano-crystalline granule |
| 04/29/2009 | CN101419940A Method for making memory cell assembly and the memory cell assembly |
| 04/29/2009 | CN100483768C Semiconductor unit, memory unit and memory unit array and its forming method |
| 04/29/2009 | CN100483767C Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 04/29/2009 | CN100483549C Complementary bit pcram sense amplifier and method of operation |
| 04/29/2009 | CN100483545C Programmable conductor random access memory and method for sensing same |
| 04/23/2009 | WO2009051105A1 Switching element and switching element manufacturing method |
| 04/23/2009 | WO2009050969A1 Nonvolatile semiconductor memory device |
| 04/23/2009 | WO2009050861A1 Nonvolatile memory element and its fabrication method, and nonvolatile semiconductor device using the nonvolatile memory element |
| 04/23/2009 | WO2009050833A1 Non-volatile memory element and non-volatile semiconductor device using the non-volatile memory element |
| 04/23/2009 | US20090104779 Method of producing phase change memory device |
| 04/23/2009 | US20090101884 Phase change memory devices and methods for fabricating the same |
| 04/23/2009 | US20090101883 Method for manufacturing a resistor random access memory with a self-aligned air gap insulator |
| 04/23/2009 | US20090101882 Programmable Via Devices |
| 04/23/2009 | US20090101881 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same |
| 04/22/2009 | EP2051309A1 Method to produce a CBRAM memory having an improved reliability |
| 04/22/2009 | EP1329958B1 Electronic device having controllable conductance |
| 04/22/2009 | CN101416326A Phase change memory elements using self-aligned phase change material layers and methods of making and using same |
| 04/22/2009 | CN101414659A Multi-state memory unit and method for storing data state and forming memory unit |
| 04/22/2009 | CN101414658A Solid-state electrolytic solution resistance change memory and preparation method thereof |
| 04/22/2009 | CN100481556C Memory and manufacturing method thereof |
| 04/22/2009 | CN100481555C I-shaped phase change memory cell, manufacturing method thereof, and array including the same |