| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 08/12/2009 | CN101504968A Phase-change memory and its production method |
| 08/12/2009 | CN101504967A Heating center pcram structure and methods for making |
| 08/12/2009 | CN101504948A Hollow pen tip like structure, apparatus comprising the same, and manufacturing method therefor |
| 08/06/2009 | WO2009096363A1 Resistance nonvolatile memory device and method for manufacturing same |
| 08/06/2009 | US20090196089 Phase change material, phase change memory device including the same, and methods of manufacturing and operating the phase change memory device |
| 08/06/2009 | US20090194760 Memory element and display device |
| 08/06/2009 | US20090194759 Phase change memory device |
| 08/06/2009 | US20090194758 Heating center pcram structure and methods for making |
| 08/06/2009 | US20090194755 High density chalcogenide memory cells |
| 08/06/2009 | DE102005018344B4 Herstellungsverfahren für rekonfigurierbare Verbindung Production method of compound reconfigurable |
| 08/05/2009 | CN201285770Y Phase transition storage unit structure |
| 08/05/2009 | CN101501851A Resistance variable element and resistance variable storage device |
| 08/05/2009 | CN101501849A Storage element, memory device and semiconductor integrated circuit |
| 08/05/2009 | CN100524882C Method for making memory cell device |
| 08/05/2009 | CN100524881C Method for making a pillar-type phase change memory element |
| 08/05/2009 | CN100524880C I type phase change storage unit with heat insulation structure |
| 08/05/2009 | CN100524879C Method for fabricating a pillar-shaped phase change memory element |
| 08/05/2009 | CN100524878C Programmable resistor material storage array with air insulating unit |
| 08/05/2009 | CN100524877C Phase change memory component, and manufacturing method |
| 08/05/2009 | CN100524876C Phase storage element and manuafcturing method thereof |
| 08/05/2009 | CN100524875C Nonvolatile memory device having two resistance elements |
| 08/05/2009 | CN100524874C Phase change tip storage cell, integrated circuit and manufacturing method thereof |
| 08/05/2009 | CN100524610C Method for manufacturing a narrow structure on an integrated circuit |
| 08/04/2009 | US7569417 Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device |
| 07/30/2009 | US20090191367 Memory devices, stylus-shaped structures, electronic apparatuses, and methods for fabricating the same |
| 07/30/2009 | US20090189142 Phase-Change Memory |
| 07/30/2009 | US20090189141 Phase change memory device and method of forming the same |
| 07/30/2009 | US20090189140 Phase-change memory element |
| 07/30/2009 | US20090189139 Pore phase change material cell fabricated from recessed pillar |
| 07/30/2009 | US20090189138 Fill-in etching free pore device |
| 07/29/2009 | CN100521279C Multi-terminal chalcogenide switching devices |
| 07/29/2009 | CN100521278C Preparing method for RRAM to avoid forming phenomenon using CuxO as storage medium |
| 07/29/2009 | CN100521277C Electric device comprising phase change material |
| 07/29/2009 | CN100521276C Electric device comprising phase change material |
| 07/29/2009 | CN100521147C Electrode structure for use in an integrated circuit |
| 07/23/2009 | WO2009090589A1 Multilayer structure comprising a phase change material layer and a method of producing the same |
| 07/23/2009 | US20090185412 Phase-change material, memory unit and method for electrically storing/reading data |
| 07/23/2009 | US20090184309 Phase change memory cell with heater and method therefor |
| 07/23/2009 | US20090184308 Forming an Intermediate Electrode Between an Ovonic Threshold Switch and a Chalcogenide Memory Element |
| 07/23/2009 | US20090184307 Phase change memory device and method of fabricating the same |
| 07/23/2009 | US20090184306 Phase change memory cell with finfet and method therefor |
| 07/23/2009 | US20090184304 Phase change memory device having plug-shaped phase change layers and method for manufacturing the same |
| 07/23/2009 | DE112007002328T5 Elektrisch betätigter Schalter Electrically operated switch |
| 07/23/2009 | DE10297191B4 Phasenwechselmaterial-Speicherbauteil und Verfahren zur Herstellung Phase change material storage component and methods for making |
| 07/22/2009 | CN101488558A M-Sb-Se phase changing thin-film material used for phase changing memory |
| 07/22/2009 | CN101488557A Si-Sb-Se phase changing thin-film material used for phase changing memory |
| 07/22/2009 | CN101488556A Preparation for high density phase-changing memory |
| 07/22/2009 | CN101488555A Manufacturing method for low power consumption phase changing memory |
| 07/22/2009 | CN100517791C Methods and apparatus for producing resistance variable material cells |
| 07/16/2009 | US20090180313 Chalcogenide anti-fuse |
| 07/16/2009 | US20090179188 Reproducible resistance variable insulating memory devices having a shaped bottom electrode |
| 07/16/2009 | US20090179187 3-d and 3-d schottky diode for cross-point, variable-resistance material memories, processes of forming same, and methods of using same |
| 07/15/2009 | EP2078102A2 Antimony and germanium complexes useful for cvd/ald of metal thin films |
| 07/15/2009 | CN101485006A Phase change alloy etch |
| 07/15/2009 | CN101483220A Process for preparing phase-change memory |
| 07/15/2009 | CN100514695C Programmable structure of micro-electronics |
| 07/15/2009 | CN100514492C Device and method for pulse width control in a phase change memory device |
| 07/14/2009 | USRE40842 Memory elements and methods for making same |
| 07/14/2009 | US7561463 Thin film phase-change memory |
| 07/14/2009 | US7560724 Storage device with reversible resistance change elements |
| 07/14/2009 | US7560339 Nonvolatile memory cell comprising a reduced height vertical diode |
| 07/09/2009 | WO2009086084A1 Field-emitter-based memory array with phase-change storage devices |
| 07/09/2009 | WO2009084514A1 Storage element, semiconductor storage device and information reading method |
| 07/09/2009 | US20090176329 Phase-change memory device and method of manufacturing the same |
| 07/09/2009 | US20090173930 Memory element and memory device |
| 07/09/2009 | US20090173928 Polysilicon emitter bjt access device for pcram |
| 07/08/2009 | EP2077580A1 Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element |
| 07/08/2009 | CN101478031A Transparent resistor type non-volatile memory |
| 07/08/2009 | CN101478030A Phase-change memory including interlayer and manufacturing process |
| 07/08/2009 | CN101478029A EPIR effect resistor type non-volatile random memory material, preparation and use thereof |
| 07/08/2009 | CN100511749C Phase change film material of silicon-adulterated sulfur series for phase change memory |
| 07/02/2009 | WO2009081595A1 Nonvolatile semiconductor storage device, and method for manufacturing the same |
| 07/02/2009 | US20090166605 Phase change memory elements using self-aligned phase change material layers and methos of making and using same |
| 07/02/2009 | US20090166603 Method of forming a small contact in phase-change memory |
| 07/02/2009 | US20090166601 Non-volatile programmable variable resistance element |
| 07/02/2009 | US20090166600 Integrated circuit devices having a stress buffer spacer and methods of fabricating the same |
| 07/02/2009 | DE102005001902B4 Verfahren zur Herstellung einer sublithographischen Kontaktstruktur in einer Speicherzelle A process for preparing a sublithographic contact structure in a memory cell |
| 07/01/2009 | EP2074625A2 Phase change memory with bi-layer bottom electrode |
| 07/01/2009 | CN101471422A Method for manufacturing phase variation memory |
| 07/01/2009 | CN101471421A Dyadic transition group metallic oxide non-volatilization electric resistance transition type memory |
| 07/01/2009 | CN100508235C Preparation method of phase storage unit device |
| 06/25/2009 | WO2009078251A1 Switching device and method for manufacturing the same |
| 06/25/2009 | WO2009078172A1 Nonvolatile memory element, process for producing the nonvolatile memory element, and nonvolatile memory device using the nonvolatile memory element |
| 06/25/2009 | WO2009043023A3 Electronic switching, memory, and sensor devices from carbon sheets on dielectric materials |
| 06/25/2009 | US20090159867 Phase change memory with layered insulator |
| 06/24/2009 | EP2073266A1 Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element |
| 06/24/2009 | CN100505363C Shaping a phase change layer in a phase change memory cell |
| 06/24/2009 | CN100505362C Method for adjusting the threshold voltage of a memory cell and chalcogenide material |
| 06/23/2009 | US7550818 Method of manufacture of a PCRAM memory cell |
| 06/18/2009 | WO2009075073A1 Nonvolatile memory device and fabrication method therefor |
| 06/18/2009 | US20090152737 Memory devices having contact features |
| 06/18/2009 | US20090152549 Memory device |
| 06/18/2009 | US20090152526 Method for manufacturing a memory element comprising a resistivity-switching NiO layer and devices obtained thereof |
| 06/17/2009 | EP2070130A2 Programmable polyelectrolyte electrical switches |
| 06/17/2009 | CN101461071A A vertical phase change memory cell and methods for manufacturing thereof |
| 06/17/2009 | CN101459220A Resistive memory device and method of forming the same |
| 06/17/2009 | CN101459219A Current constricting phase change memory element structure |
| 06/17/2009 | CN100502084C Thin film phase change cell with thermal isolation layer and manufacturing method |
| 06/17/2009 | CN100502083C Vertical side wall active pin structures in a phase change memory and manufacturing methods |
| 06/17/2009 | CN100502082C Memory cell device and manufacturing method |