| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 10/15/2009 | WO2009125777A1 Resistance change element and method for manufacturing the same |
| 10/15/2009 | US20090257271 Resistance change element and method of manufacturing the same |
| 10/15/2009 | US20090256131 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same |
| 10/15/2009 | US20090256129 Sidewall structured switchable resistor cell |
| 10/15/2009 | US20090256127 Compounds for Depositing Tellurium-Containing Films |
| 10/14/2009 | EP2109142A1 Method for forming chalcogenide film and method for manufacturing recording element |
| 10/14/2009 | CN101556986A Multi-state resistive switching material, thin film prepared therewith, multi-sate resistive switching memory element and application of memory element in memory device |
| 10/14/2009 | CN100550462C Resistor random access memory cell with l-shaped electrode |
| 10/14/2009 | CN100550461C Phase change memory cell with vacuum spacer |
| 10/14/2009 | CN100550460C Integrated circuit device and fabrication using metal-doped chalcogenide materials |
| 10/14/2009 | CN100550459C Method for improving the pulse trigger resistor random memory fatigue resisting characteristic |
| 10/08/2009 | WO2009122601A1 Nonvolatile memory device and its manufacturing method |
| 10/08/2009 | WO2009122583A1 Nonvolatile recording device and process for producing the same |
| 10/08/2009 | WO2009122582A1 Nonvolatile recording device and process for producing the same |
| 10/08/2009 | WO2009122570A1 Information recording/reproducing device |
| 10/08/2009 | WO2009122349A2 Vertical phase change memory cell |
| 10/08/2009 | WO2009122347A2 Multiple bit phase change memory cell |
| 10/08/2009 | US20090250682 Phase change memory device |
| 10/08/2009 | US20090250681 Non-Volatile Resistive Oxide Memory Cells, Non-Volatile Resistive Oxide Memory Arrays, And Methods Of Forming Non-Volatile Resistive Oxide Memory Cells And Memory Arrays |
| 10/08/2009 | US20090250677 Reducing drift in chalcogenide devices |
| 10/08/2009 | US20090250676 Liquid crystalline organic semiconductor material, and semiconductor element or information recording medium using the same |
| 10/07/2009 | CN101553924A Nonvolatile semiconductor storage device |
| 10/07/2009 | CN101552321A Semiconductor device and method of manufacturing the same |
| 10/07/2009 | CN101552282A Phase-change memory device and method of fabricating the same |
| 10/06/2009 | US7598113 Phase change memory device and fabricating method therefor |
| 10/01/2009 | WO2009119533A1 Semiconductor storage device, memory cell array, semiconductor storage device manufacturing method, and drive method |
| 10/01/2009 | WO2009118926A1 Nonvolatile storage device and method for manufacturing the same |
| 10/01/2009 | US20090242868 Semiconductor device and method of manufacturing the same |
| 10/01/2009 | US20090242867 Phase change memory device having protective layer for protecting phase change material and method for manufacturing the same |
| 09/30/2009 | CN101548403A Electrically actuated switch |
| 09/30/2009 | CN101546811A Memister |
| 09/30/2009 | CN101546810A Multilevel resistance conversion storage material containing germanium, antimony and selenium and application thereof |
| 09/30/2009 | CN101546809A Memory devices and methods for manufacturing the same |
| 09/29/2009 | US7595500 High speed electron tunneling devices |
| 09/24/2009 | WO2009116564A1 Resistance change element, semiconductor storage device, and manufacturing method and drive method thereof |
| 09/24/2009 | WO2009115995A1 An electronic component comprising a convertible structure |
| 09/24/2009 | WO2009043023A4 Electronic switching, memory, and sensor devices from carbon sheets on dielectric materials |
| 09/24/2009 | US20090236583 Method of fabricating a phase change memory and phase change memory |
| 09/23/2009 | CN101542768A Programmable polyelectrolyte electrical switches |
| 09/23/2009 | CN101540370A GeTe/Sb2Te3 multilayer nanocomposite phase transition film and preparation method |
| 09/23/2009 | CN101540369A Phase change memory device |
| 09/23/2009 | CN101540368A Memory cell and method for manufacturing a memory cell |
| 09/23/2009 | CN100544051C Method for forming self-aligned thermal isolation cell for a variable resistance memory array |
| 09/22/2009 | US7592617 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method |
| 09/17/2009 | WO2009114796A1 Correlated electron material with morphological formations |
| 09/17/2009 | WO2009113699A1 Information recording device and information recording/reproduction system including the same |
| 09/17/2009 | US20090230379 Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Memory Module |
| 09/17/2009 | US20090230378 Resistive memory devices |
| 09/17/2009 | US20090230375 Phase Change Memory Device |
| 09/16/2009 | CN101533892A Resistive memory devices and method of forming the same |
| 09/16/2009 | CN101533891A Nonvolatile resistance variation memory structure and preparation method |
| 09/16/2009 | CN101533890A Transparent RRAM component with zinc oxide based homogeneous structure and manufacture method thereof |
| 09/16/2009 | CN101533849A Resistive memory devices and method of forming the same |
| 09/16/2009 | CN101533669A Regulation for resistance switching mode of multilayer film structure for resistance type random access memory |
| 09/16/2009 | CN100541855C Non-volatile memory element and method of manufacturing the same |
| 09/16/2009 | CN100541854C Non-volatile memory component based on RbAg4I5 film and producing method thereof |
| 09/15/2009 | US7589344 Semiconductor device and method of producing the same |
| 09/11/2009 | WO2009110120A1 Nonvolatile memory device and its manufacturing method |
| 09/11/2009 | WO2008059701A9 Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element |
| 09/10/2009 | US20090224223 Functional molecular element |
| 09/09/2009 | EP2099072A1 Resistance change element and method for manufacturing the same |
| 09/09/2009 | EP2099071A1 Resistance change device and process for producing the same |
| 09/09/2009 | EP2099070A1 Process for producing resistance change device |
| 09/09/2009 | CN101529608A Damascene metal-insulator-metal (mim) device with improved scaleability |
| 09/09/2009 | CN101527349A Amorphous indium and tin oxide film and application thereof in manufacturing resistive memory element |
| 09/09/2009 | CN100539159C Sidewall formation for high density polymer memory element array |
| 09/09/2009 | CN100538878C A programmable conductor random access memory and a method for writing thereto |
| 09/03/2009 | US20090218559 Integrated Circuit, Memory Cell Array, Memory Module, and Method of Manufacturing an Integrated Circuit |
| 09/03/2009 | DE102006023608B4 Programmierbare resistive Speicherzelle mit einer programmierbaren Widerstandsschicht und Verfahren zur Herstellung Programmable resistive memory cell having a programmable resistance layer and processes for preparing |
| 09/02/2009 | EP1889308B1 Memory device with switching glass layer |
| 09/02/2009 | CN101523629A Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
| 09/02/2009 | CN101521260A Nano composite phase-change material and preparation method thereof |
| 09/02/2009 | CN101521177A Method for preparing transverse phase transition memory by using single-walled carbon nanotube as electrode |
| 09/02/2009 | CN100536189C Electrode for phase change memory device and method |
| 08/27/2009 | WO2009104789A1 Method for manufacturing variable resistance element |
| 08/27/2009 | WO2009104239A1 Non-volatile storage device and its manufacturing method |
| 08/27/2009 | WO2009104229A1 Resistive nonvolatile memory element and method of manufacture thereof |
| 08/27/2009 | US20090213633 Four vertically stacked memory layers in a non-volatile re-writeable memory device |
| 08/27/2009 | US20090212274 Phase change memory random access device using single-element phase change material |
| 08/26/2009 | CN101515630A Resistance-type memory element and method for forming same |
| 08/26/2009 | CN100533755C Electric device with phase change material and parallel heater |
| 08/26/2009 | CN100533595C Memory device |
| 08/25/2009 | US7580276 Nonvolatile memory element |
| 08/25/2009 | US7579615 Access transistor for memory device |
| 08/20/2009 | WO2009101785A1 Nonvolatile semiconductor storage device and method for manufacturing the same |
| 08/20/2009 | US20090207681 Systems and devices including local data lines and methods of using, making, and operating the same |
| 08/20/2009 | US20090206318 Nonvolatile memory device and method of manufacturing the same |
| 08/20/2009 | US20090206317 Phase change memory device and method for manufacturing the same |
| 08/20/2009 | US20090206316 Integrated circuit including u-shaped access device |
| 08/20/2009 | US20090206315 Integrated circuit including u-shaped access device |
| 08/19/2009 | CN101512788A Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using |
| 08/19/2009 | CN101510584A Multi-state phase-change memory unit element and preparation method |
| 08/19/2009 | CN100530739C Phase change memory unit with loop phase change material and its making method |
| 08/19/2009 | CN100530738C Phase-change memory cell structure and fabrication method thereof |
| 08/18/2009 | US7576350 Programmable resistance memory element with multi-regioned contact |
| 08/13/2009 | US20090200640 Variable resistive element, and its manufacturing method |
| 08/13/2009 | US20090200537 Phase change memory device preventing contact loss and method for manufacturing the same |
| 08/13/2009 | US20090200535 Non-Volatile Memory Element with Improved Temperature Stability |
| 08/12/2009 | CN101507009A Programmable resistance memory devices and systems using the same and methods of forming the same |
| 08/12/2009 | CN101504969A Production method for phase change memory with novel electrode structure |