Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
12/2009
12/10/2009WO2009147790A1 Non‑volatile storage element, non‑volatile storage device, and non‑volatile semiconductor device
12/10/2009US20090305508 Integrated circuit with upstanding stylus
12/10/2009US20090305487 Non-volatile resistance switching memory
12/10/2009US20090303784 Asymetric threshold three terminal switching device
12/10/2009US20090303781 Method and apparatus for thin film memory
12/10/2009US20090303773 Multi-terminal reversibly switchable memory device
12/10/2009US20090303772 Two-Terminal Reversibly Switchable Memory Device
12/10/2009US20090302302 Metal oxide resistive memory and method of fabricating the same
12/10/2009US20090302301 Resistance ram device having a carbon nano-tube and method for manufacturing the same
12/10/2009US20090302300 Phase change memory device having decreased contact resistance of heater and method for manufacturing the same
12/10/2009US20090302299 Phase change memory device having a word line contact and method for manufacturing the same
12/10/2009US20090302298 Forming sublithographic phase change memory heaters
12/10/2009US20090302297 Phase change memory devices and their methods of fabrication
12/10/2009US20090302295 Structures & Methods for Combining Carbon Nanotube Array and Organic Materials as a Variable Gap Interposer for Removing Heat from Solid-State Devices
12/10/2009US20090302293 Semiconductor device
12/09/2009CN101599531A Memory cell of resistive random access memory (RRAM) and preparation method thereof
12/09/2009CN101599530A Memory cell of resistive random access memory (RRAM) and preparation method thereof
12/09/2009CN101599529A Resistance ram device having a carbon nano-tube and method for manufacturing the same
12/09/2009CN100568569C Semiconductor structure and its manufacture method
12/09/2009CN100568506C Memory device and semiconductor integrate circuit
12/08/2009US7630233 Semiconductor device and driving method of the same
12/03/2009US20090298222 Method for manufacturing Chalcogenide devices
12/03/2009US20090294751 Nonvolatile storage device and method for manufacturing same
12/03/2009US20090294750 Phase change memory devices and methods for fabricating the same
12/03/2009US20090294748 Phase Change Memory Cell with Reduced Switchable Volume
12/02/2009EP2128901A1 Storage element and storage device
12/02/2009CN201355615Y Embedded structure of alloy material
12/02/2009CN101593810A Nano structure quick-switch memristor and manufacturing method thereof
12/02/2009CN101593809A Resistance random access memory and manufacture method
12/02/2009CN100565955C Transition layer for phase-change memory
11/2009
11/26/2009WO2009142165A1 Semiconductor device and method for fabricating the same
11/26/2009WO2009141857A1 Resistance change nonvolatile memory device
11/26/2009WO2009122349A3 Vertical phase change memory cell
11/26/2009WO2009122347A3 Multiple bit phase change memory cell
11/26/2009US20090291546 Programmable Via Devices
11/26/2009US20090290412 Memory Devices, Memory Device Constructions, Constructions, Memory Device Forming Methods, Current Conducting Devices, and Memory Cell Programming Methods
11/26/2009US20090289240 Non-volatile multi-bit memory with programmable capacitance
11/25/2009EP2122704A1 Use of lacunar spinels with tetrahedral aggregates of a transition element of the of the am4x8 type in an electronic data rewritable non volatile memory, and corresponding material
11/25/2009CN101589469A Method for forming chalcogenide film and method for manufacturing recording element
11/25/2009CN101587937A Binary metallic oxide interrupted memory and manufacturing method thereof
11/25/2009CN101587936A Resistive random access memory based on bismuth iron thin film system and manufacturing method thereof
11/25/2009CN101586005A Chemical-mechanical polishing solution for SiSb based phase-changing materials
11/25/2009CN100563042C Method for manufacturing a resistor random access memory with a self-aligned air gap insulator
11/25/2009CN100563041C Resistor storage device unit structure and its preparing method
11/25/2009CN100563040C Phase change memory cell and manufacturing method
11/25/2009CN100562985C Method for making a self-converged void and bottom electrode for memoery cell
11/19/2009WO2009140596A1 Carbon nano-film reversible resistance-switchable elements and methods of forming the same
11/19/2009WO2009140305A1 Correlated electron material and process for making
11/19/2009WO2009139185A1 Non-volatile semiconductor memory device and manufacturing method thereof
11/19/2009US20090283738 Phase-change memory using single element semimetallic layer
11/19/2009US20090283736 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
11/19/2009US20090283735 Carbon nano-film reversible resistance-switchable elements and methods of forming the same
11/18/2009CN101582485A Doping modified phase change material and phase change storage unit containing same and preparation method thereof
11/17/2009US7618840 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
11/12/2009WO2009136467A1 Nonvolatile storage element, nonvolatile storage device, and method for writing data into nonvolatile storage element
11/12/2009US20090278112 Methods for etching carbon nano-tube films for use in non-volatile memories
11/12/2009US20090278111 Resistive changing device
11/12/2009US20090278108 Phase change memory device having phase change material layer containing phase change nano particles and method of fabricating the same
11/11/2009EP2117058A1 Phase change device having two or more substantially amorphous regions in high resistance state
11/11/2009CN101577311A One-time programming memory and manufacturing method thereof
11/11/2009CN101577310A Resistance transition type memory and manufacturing method thereof
11/11/2009CN101577309A Operating method of electrical pulse voltage for RRAM application
11/11/2009CN101577308A Variable-resistance memory doped with ZrO2 and preparation method thereof
11/11/2009CN101577307A Storage unit of resistance storage and manufacture method thereof
11/11/2009CN100559623C Non-volatile memory element and method of manufacturing the same
11/11/2009CN100559605C Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same
11/05/2009WO2009134989A2 Antimony compounds useful for deposition of antimony-containing materials
11/05/2009US20090272962 Reduction of forming voltage in semiconductor devices
11/05/2009US20090272961 Surface treatment to improve resistive-switching characteristics
11/05/2009US20090272960 Non-Volatile Resistive Oxide Memory Cells, and Methods Of Forming Non-Volatile Resistive Oxide Memory Cells
11/05/2009US20090272958 Resistive Memory
11/04/2009EP1456851B1 A programmable conductor random access memory and a method for writing thereto
11/03/2009US7613028 Solid electrolyte switching element
11/03/2009US7612359 Microelectronic devices using sacrificial layers and structures fabricated by same
10/2009
10/29/2009WO2009130668A1 Phase-change-material memory with multibit memory cells and method for fabricating the same
10/29/2009US20090267646 Nano-Electron Fluidic Logic (NFL) Device
10/29/2009US20090267046 Memory structure with a programmable resistive element and its manufacturing process
10/29/2009US20090267045 Phase change memory device having heaters and method for manufacturing the same
10/28/2009EP2112664A1 Programmable conductor random access memory and a method for writing thereto
10/28/2009CN101569011A Resistance variable element, resistance variable storage device and resistance variable device
10/28/2009CN101568971A Nonvolatile memory element, nonvolatile semiconductor storage device, and method for reading data from the memory element and storage device and method for writing data in the memory element and stora
10/28/2009CN101567421A Prismatical phase transition material nano-array and preparation method thereof
10/28/2009CN101567420A Method for preparing phase transition storage
10/28/2009CN100555700C Construction for enhancing reliability of phase-change memory storage unit and manufacturing method thereof
10/28/2009CN100555699C Structures and methods of a bistable resistive random access memory
10/28/2009CN100555652C Phase change memory device and methods of operating and fabricating the same
10/28/2009CN100555651C Phase-change RAM and method for fabricating the same
10/27/2009US7608467 Switchable resistive perovskite microelectronic device with multi-layer thin film structure
10/22/2009US20090263934 Methods of forming chalcogenide films and methods of manufacturing memory devices using the same
10/22/2009US20090261315 Semiconductor integrated circuit device and method for fabricating the same
10/22/2009US20090261314 Non-volatile memory device and method of fabricating the same
10/22/2009US20090261313 Memory cell having a buried phase change region and method for fabricating the same
10/21/2009CN101562229A Resistance-variable storing device
10/21/2009CN101562228A Non-volatile resistance memory element and preparation method thereof
10/21/2009CN100553005C Heating layer for reducing phase-change memory device unit power consumption and its manufacturing method
10/21/2009CN100553004C Phase change memory and its making method
10/15/2009WO2009126846A1 Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
10/15/2009WO2009126493A1 Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing
10/15/2009WO2009126492A1 Sidewall structured switchable resistor cell
10/15/2009WO2009126489A1 Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
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