| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 03/03/2010 | CN101663770A An electronic device comprising a convertible structure |
| 03/03/2010 | CN101661992A Combined electrode structure of phase change memory cell device |
| 02/25/2010 | WO2010022097A1 Methods for increasing carbon nano-tube (cnt) yield in memory devices |
| 02/25/2010 | WO2010021134A1 Variable resistance nonvolatile memory device and memory cell formation method |
| 02/25/2010 | US20100044672 Semiconductor memory |
| 02/25/2010 | US20100044671 Methods for increasing carbon nano-tube (cnt) yield in memory devices |
| 02/25/2010 | US20100044670 Semiconductor device structures having single-crystalline switching device on conducting lines and methods thereof |
| 02/25/2010 | US20100044669 Integrated circuit including memory cell having cup-shaped electrode interface |
| 02/23/2010 | US7667222 Phase change memory featuring ferromagnetic layers in contact with phase change layer |
| 02/18/2010 | US20100038624 Memory device having highly integrated cell structure and method of its fabrication |
| 02/18/2010 | US20100038621 Four-Terminal Reconfigurable Devices |
| 02/18/2010 | US20100038619 Variable resistance element, manufacturing method thereof, and electronic device |
| 02/18/2010 | US20100038618 Semiconductor device and manufacturing method thereof |
| 02/18/2010 | US20100038615 Nonvolatile storage device |
| 02/17/2010 | EP2153477A1 Non-volatile memory device |
| 02/17/2010 | CN101652874A An electronic device, and a method of operating an electronic device |
| 02/17/2010 | CN101652873A Memory devices having electrodes comprising nanowires, systems including same and methods of forming same |
| 02/17/2010 | CN100590903C Si-Te-Sb series phase-change thin film material for phase-change memory |
| 02/16/2010 | US7663135 Memory cell having a side electrode contact |
| 02/11/2010 | US20100032643 Memory cell that includes a carbon-based memory element and methods of forming the same |
| 02/11/2010 | US20100032642 Method of Manufacturing a Resistivity Changing Memory Cell, Resistivity Changing Memory Cell, Integrated Circuit, and Memory Module |
| 02/11/2010 | US20100032641 Nonvolatile semiconductor memory apparatus and manufacturing method thereof |
| 02/11/2010 | US20100032639 Memory cell that includes a carbon-based memory element and methods of forming the same |
| 02/11/2010 | US20100032637 Nonvolatile memory device and method of manufacturing the same |
| 02/09/2010 | US7660181 Method of making non-volatile memory cell with embedded antifuse |
| 02/09/2010 | US7659049 Optical information recording medium utilizing a crystalline non-recorded state and amorphous recorded state using an alloy, oxide, carbide, nitride or silicide containing antimony, tin, germanium, and tellurium |
| 02/04/2010 | WO2010012683A1 Memory device and cbram memory having improved reliability |
| 02/03/2010 | EP2149165A2 An electronic device comprising a convertible structure |
| 02/03/2010 | CN101640251A Bottom electrode structural improvement of storage unit of phase-change memory and manufacturing implementation method |
| 02/03/2010 | CN100587995C Solid electrolyte silver germanium oxygen thin film and preparation method and use thereof |
| 02/03/2010 | CN100587994C Storing unit and manufacturing method thereof |
| 02/03/2010 | CN100587820C Information recording medium and method for producing the same |
| 02/02/2010 | US7655938 Phase change memory with U-shaped chalcogenide cell |
| 01/28/2010 | WO2010010816A1 Method and apparatus for modifying titanium nitride film |
| 01/28/2010 | US20100019221 Fully self-aligned pore-type memory cell having diode access device |
| 01/28/2010 | US20100019220 Phase change random access memory device, method of fabricating the same, and method of operating the same |
| 01/28/2010 | US20100019218 Resistive memory device and method of fabricating the same |
| 01/27/2010 | CN101635331A Resistive memory device and method of fabricating the same |
| 01/27/2010 | CN100585900C Phase changeable storage device and manufacture method thereof |
| 01/27/2010 | CN100585899C Antimony precursor, phase-change memory device using the antimony precursor, and method of manufacturing the phase-change memory device |
| 01/21/2010 | US20100014344 Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof |
| 01/21/2010 | US20100012918 Write-Once Memory Array including Phase-Change Elements and Threshold Switch Isolation |
| 01/21/2010 | US20100012912 Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices |
| 01/21/2010 | DE102006028971B4 Integriertes Schaltkreisbauelement mit einer vertikalen Diode und Herstellungsverfahren Integrated circuit device with a vertical diode and manufacturing method |
| 01/20/2010 | CN100583484C Manufacturing method for pipe-shaped electrode phase change memory |
| 01/20/2010 | CN100583483C Phase change memory cell and manufacturing method |
| 01/14/2010 | WO2010006000A1 Carbon-based resistivity-switching materials and methods of forming the same |
| 01/14/2010 | WO2010004705A1 Nonvolatile memory element, method for manufacturing the nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element |
| 01/14/2010 | WO2010004675A1 Current reduction element, memory element, and methods for manufacture of the elements |
| 01/14/2010 | US20100006815 Phase change memory and recording material for phase change memory |
| 01/14/2010 | DE102005001460B4 Speichervorrichtung und Herstellungsverfahren Memory device and manufacturing method |
| 01/13/2010 | CN101626061A Method for developing and sieving phase-change storage material |
| 01/13/2010 | CN101626060A Phase-change memory element |
| 01/13/2010 | CN100580970C Memory cell and its making method |
| 01/13/2010 | CN100580969C Phase-change memory device |
| 01/13/2010 | CN100580930C Variable resistor element and production method therefor and storage device provided with same |
| 01/12/2010 | US7646007 Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 01/07/2010 | WO2009134989A3 Antimony compounds useful for deposition of antimony-containing materials |
| 01/07/2010 | US20100002490 Electric element, memory device, and semiconductor integrated circuit |
| 01/07/2010 | US20100001271 Semiconductor device with amorphous silicon mas memory cell structure and manufacturing method thereof |
| 01/07/2010 | US20100001254 Resistance memory element |
| 01/07/2010 | US20100001253 Method for delineation of phase change memory cell via film resistivity modification |
| 01/07/2010 | US20100001252 Resistance Changing Memory Cell |
| 01/06/2010 | EP2141753A2 Resistance RAM having oxide layer and solid electrolyte layer, and method for operating the same |
| 01/06/2010 | CN101622729A Method for manufacturing a resistive switching device and devices obtained thereof |
| 01/06/2010 | CN101622728A Method for controlled formation of the resistive switching material in a resistive switching device and devices obtained thereof |
| 01/06/2010 | CN101621115A Binary oxide resistance random access memory (RRAM) storage unit of electric pulse induced resistance conversion characteristics |
| 01/06/2010 | CN101621114A Oxide multilayered gradient film and RRAM component structured thereby |
| 01/06/2010 | CN100578834C Phase variation storage installation and its making method |
| 01/06/2010 | CN100578804C Phase-change memory device and method of manufacturing same |
| 01/06/2010 | CN100578753C Memory element and manufacturing method thereof |
| 01/06/2010 | CN100578668C Multi-level memory element and methods for programming and reading the same |
| 12/31/2009 | US20090321710 Three-terminal cascade switch for controlling static power consumption in integrated circuits |
| 12/31/2009 | US20090321709 Memory element, memory apparatus, and semiconductor integrated circuit |
| 12/31/2009 | US20090321708 Phase change memory device having protective layer and method for manufacturing the same |
| 12/31/2009 | US20090321706 Resistive Memory Devices with Improved Resistive Changing Elements |
| 12/30/2009 | WO2009157479A1 Switching element and switching element manufacturing method |
| 12/30/2009 | EP2139054A2 Memory device and method of manufacturing the same |
| 12/30/2009 | CN101615656A Non-volatile memory device and method of fabricating the same |
| 12/30/2009 | CN101615655A Conductive oxide transition layer and phase-changing memory unit with same |
| 12/30/2009 | CN101615654A In2Te3 phase-change memory element and preparation method thereof |
| 12/30/2009 | CN101615426A A programmable conductor random access memory and a method for writing thereto |
| 12/24/2009 | US20090316492 Memory cells, memory cell arrays, methods of using and methods of making |
| 12/24/2009 | US20090315010 Three-terminal cascade switch for controlling static power consumption in integrated circuits |
| 12/23/2009 | WO2009154266A1 Semiconductor memory device and manufacturing method therefor |
| 12/23/2009 | WO2009153870A1 Phase-change memory element, phase-change memory cell, vacuum treatment device, and method for manufacturing phase-change memory element |
| 12/23/2009 | CN101609868A Manufacturing method for copper oxide nanometer particle film non-volatile memorizer prototype device |
| 12/23/2009 | CN100573953C Resistor type memory element operation method |
| 12/23/2009 | CN100573952C Bridge resistance random access memory device and method with a singular contact structure |
| 12/23/2009 | CN100573951C Phase-change storage device and its making method |
| 12/23/2009 | CN100573950C Phase-change storage apparatus and method of manufacture |
| 12/23/2009 | CN100573898C Self-aligned planerized bottom electrode phase change memory and manufacturing method |
| 12/17/2009 | WO2009150814A1 Semiconductor device, semiconductor device manufacturing method, semiconductor chip and system |
| 12/17/2009 | WO2009150751A1 Switching element |
| 12/17/2009 | US20090309174 Sensor module and semiconductor chip |
| 12/17/2009 | US20090309088 Switching device, semiconductor device, programmable logic integrated circuit, and memory device |
| 12/17/2009 | US20090308313 Non-volatile resistance switching memory |
| 12/16/2009 | EP2132775A1 Memory device and manufacturing mehtod thereof |
| 12/16/2009 | CN101604729A Phase change memory cell having top and bottom sidewall contacts, and methods for manufacturing the same |
| 12/16/2009 | CN101604728A Phase-change memorizer device and manufacture method thereof |