Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
04/2010
04/15/2010US20100090190 Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices
04/15/2010US20100090188 Semiconductor device
04/15/2010DE10393702B4 Verfahren zum Herstellen einer Speicherzelle, Speicherzelle und Speicherzellen-Anordnung A method for fabricating a memory cell, memory cell and memory cell arrangement
04/15/2010DE102007004639B4 Verfahren zum Herstellen einer Festkörperelektrolyt-Speichervorrichtung sowie Festkörperelektrolyt-Speichervorrichtung A method for manufacturing a solid electrolyte memory device and solid electrolyte memory device
04/13/2010US7696550 Bipolar switching PCMO capacitor
04/13/2010US7696018 Methods for fabricating multi-terminal phase change devices
04/08/2010WO2010038786A1 Memory element, method for manufacturing the memory element, and memory device comprising memory element
04/08/2010WO2010038442A1 Method for driving resistance change element, initial processing method, and nonvolatile storage device
04/08/2010WO2010038423A1 Nonvolatile storage element and nonvolatile storage device using same
04/08/2010WO2010038216A1 Phase change memory cells and fabrication thereof
04/08/2010WO2010037611A1 Method to reduce the reset current of phase change memories using stress liner layers
04/08/2010US20100084626 Electronic device comprising a convertible structure, and a method of manufacturing an electronic device
04/06/2010US7692178 Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof
04/06/2010US7692177 Resistance variable memory element and its method of formation
04/06/2010US7692176 The adiabatic layer pattern reduces the heat loss from the programming layer pattern so that abnormal program operation is surpressed; serves to lowers the height of the programming layer pattern so the phase-changeable layer pattern may be changed during a read/write operation using a lower current
04/06/2010US7691683 Electrode structures and method to form electrode structures that minimize electrode work function variation
04/01/2010WO2010036619A1 Damascene process for carbon memory element with miim diode
04/01/2010WO2010036618A1 Miim diodes
04/01/2010WO2010036616A1 Miim diodes having stacked structure
04/01/2010US20100080051 Bit-erasing architecture for seek-scan probe (ssp) memory storage
04/01/2010US20100078622 Nonvolatile memory device and method for manufacturing same
04/01/2010US20100078621 Method to reduce reset current of pcm using stress liner layers
04/01/2010US20100078620 Semiconductor device with thermally coupled phase change layers
04/01/2010US20100078619 Resistive memory cell and method for manufacturing a resistive memory cell
04/01/2010US20100078618 Self-assembly process for memory array
04/01/2010US20100078615 Semiconductor memory device
03/2010
03/31/2010CN101689604A An electronic device, and a method of manufacturing an electronic device
03/31/2010CN101689603A An electronic component, and a method of manufacturing an electronic component
03/31/2010CN101689602A Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
03/31/2010CN101689548A Nonvolatile storage element, nonvolatile storage device, and method for writing data into nonvolatile storage element
03/31/2010CN101689402A Electric device comprising phase change material and heating element
03/31/2010CN101685827A Memory device and its manufacturing method
03/31/2010CN101685826A Memory array with diode driver and method for fabricating the same
03/30/2010US7687881 Small electrode for phase change memories
03/30/2010US7687840 Crosspoint structure semiconductor memory device, and manufacturing method thereof
03/30/2010US7687796 Method and apparatus for forming an integrated circuit electrode having a reduced contact area
03/30/2010US7687793 Resistance variable memory cells
03/25/2010WO2010032470A1 Current suppressing element, storage element, storage device, and method for manufacturing current suppressing element
03/25/2010WO2010032468A1 Storage element and storage device
03/25/2010US20100074001 Information recording/reproducing device
03/25/2010US20100072454 Exposure method, and semiconductor device
03/25/2010US20100072453 Phase-Changeable Fuse Elements and Memory Devices Containing Phase-Changeable Fuse Elements and Memory Cells Therein
03/25/2010US20100072452 Non-volatile memory device
03/25/2010US20100072451 Semiconductor device
03/25/2010US20100072450 Phase change memory device with heater electrodes having fine contact area and method for manufacturing the same
03/25/2010US20100072449 Rram with improved resistance transformation characteristic and method of making the same
03/25/2010US20100072448 Planar programmable metallization memory cells
03/25/2010US20100072447 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
03/25/2010US20100072446 Phase-change semiconductor device and methods of manufacturing the same
03/25/2010US20100072445 Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
03/25/2010US20100072286 Semiconductor device and driving method of the same
03/24/2010EP2165337A2 3d r/w cell with diode and resistive semiconductor element and method of making thereof
03/24/2010CN101681994A An electronic device comprising a convertible structure, and a method of manufacturing an electronic device
03/24/2010CN101681993A Solution-processed solid electrolytic layer device and fabrication
03/24/2010CN101681913A Variable resistive element, method for manufacturing the variable resistive element and nonvolatile semiconductor storage device
03/24/2010CN101681912A Resistive nonvolatile memory element and method of manufacture thereof
03/24/2010CN101677121A Resistive memory device and method of fabricating the same
03/24/2010CN101677108A 非易失性存储装置 Non-volatile memory device
03/24/2010CN101677080A Memory cell array manufacture method and memory device
03/24/2010CN100595930C Electrically rewritable non-volatile memory element
03/23/2010US7683360 Horizontal chalcogenide element defined by a pad for use in solid-state memories
03/23/2010US7682976 Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions
03/23/2010US7682868 Method for making a keyhole opening during the manufacture of a memory cell
03/23/2010US7682866 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation
03/18/2010WO2010029645A1 Nonvolatile storage device and method for manufacturing the same
03/18/2010WO2010029634A1 Resistance-varying element, and information recording/reproducing device
03/18/2010WO2010029607A1 Information recording/reproducing device
03/18/2010US20100065806 Programmable resistance memory devices and systems using the same and methods of forming the same
03/18/2010US20100065805 Phase change memory device having a bottleneck constriction and method of manufacturing the same
03/18/2010US20100065804 Phase change memory device having multiple metal silicide layers and method of manufacturing the same
03/18/2010US20100065803 Memory device and manufacturing method thereof
03/17/2010EP2164104A2 Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same
03/17/2010EP2162931A1 An electronic device, and a method of manufacturing an electronic device
03/17/2010EP2162917A1 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
03/17/2010EP2162887A1 Electric device comprising phase change material and heating element
03/17/2010EP1685569B1 Phase change memory, phase change memory assembly, phase change memory cell, 2d phase change memory cell array, 3d phase change memory cell array and electronic component
03/17/2010CN101675524A Inverted variable resistance memory cell and method of making the same
03/17/2010CN101673803A Resistance random memory based on columbium oxide film and preparation method thereof
03/17/2010CN100594613C Electric device comprising phase change material
03/11/2010WO2010026924A1 Storage element and storage device
03/11/2010WO2010026923A1 Storage element and storage device
03/11/2010US20100062562 Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions
03/11/2010US20100061140 Integrated circuit including doped semiconductor line having conductive cladding
03/11/2010US20100061132 Semiconductor storage device
03/11/2010US20100059732 Phase change memory device having heat sinks formed under heaters and method for manufacturing the same
03/11/2010US20100059731 Phase change memory device and method for manufacturing the same
03/10/2010EP2161750A2 Memory device and storage apparatus
03/10/2010CN101667622A Plasma treating methods of fabricating phase change memory devices, and memory devices so fabricated
03/10/2010CN100593868C Nonvolatile memory device and fabrication method thereof
03/10/2010CN100593867C Reversible resistivity-switching metal oxide or nitride layer with added metal
03/10/2010CN100593866C Spacer electrode small pin phase change memory RAM and manufacturing method
03/10/2010CN100593865C Thermal isolation for an active-sidewall phase change memory cell
03/09/2010US7675766 Microelectric programmable device and methods of forming and programming the same
03/09/2010US7675053 Memory device comprising a memory layer and a metal chalcogenide ion-source layer
03/04/2010WO2010024936A1 Phase change memory materials
03/04/2010US20100054029 Concentric phase change memory element
03/04/2010US20100051894 Device for storing data with optical addressing
03/04/2010US20100051891 Electronic element including ferroelectric substance film and method of manufacturing the same
03/03/2010EP1878064B1 Method and structure for peltier-controlled phase change memory
03/03/2010CN101663771A An electronic component, and a method of manufacturing an electronic component
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