Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
06/2010
06/10/2010US20100140583 Phase change memory device and fabricating method therefor
06/10/2010US20100140580 Phase Change Memory
06/10/2010US20100140579 Silver-selenide/chalcogenide glass stack for resistance variable memory
06/09/2010CN101728484A BiFeO3 film resistor memory structure and preparation method thereof
06/09/2010CN101728483A Dielectric-sandwiched pillar memory device
06/09/2010CN101728482A Method for manufacturing phase-change semiconductor device and phase-change semiconductor device
06/09/2010CN101728481A Method for manufacturing phase-change semiconductor device and phase-change semiconductor device
06/09/2010CN101728480A Resistance type random access memory structure and manufacturing method thereof
06/09/2010CN101477967B Process for preparing vertical structure phase-change memory
06/09/2010CN101399314B Phase-changing storage device and manufacture method thereof
06/09/2010CN101257087B Phase change memory cell with filled sidewall memory element and method for fabricating the same
06/09/2010CN101170159B Carbon filament memory and fabrication method
06/09/2010CN101097989B Memory cell with memory material insulation and manufacturing method
06/09/2010CN101083298B Resistor random access memory cell with reduced active area and reduced contact areas
06/09/2010CN101042903B Method for producing sputtering target for phase-change memory
06/08/2010US7732801 Phase change memory device
06/08/2010US7732250 Methods of forming phase changeable layers including protruding portions in electrodes thereof
06/03/2010US20100135071 Microelectronic programmable device and methods of forming and programming the same
06/03/2010US20100135060 Memory device and storage apparatus
06/03/2010US20100134239 Method of using a switchable resistive perovskite microelectronic device with multi-Layer thin film structure
06/03/2010US20100133503 Phase change memory
06/03/2010US20100133501 Switching element and method for manufacturing switching element
06/03/2010US20100133500 Memory Cell Having a Side Electrode Contact
06/03/2010US20100133499 Resistance variable memory with temperature tolerant materials
06/03/2010US20100133498 Memory device and semiconductor device
06/03/2010US20100133494 Use of lacunar spinels with tetrahedral aggregates of a transition element of the am4x8 type with an electronic data rewritable non volatile memory, and corresponding material
06/02/2010CN101720508A Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
06/02/2010CN101383397B Phase change memory device and fabrication method thereof
06/02/2010CN101226951B Resistance random access memory
06/02/2010CN101197422B Method for making a keyhole opening during the manufacture of a memory cell
06/02/2010CN101197317B Phase change memory cell with thermal barrier and method for fabricating the same
06/02/2010CN101169970B Methods of operating a bistable resistance random access memory
06/01/2010US7728321 Phase change memory device and method of manufacturing the device
05/2010
05/27/2010WO2010058569A1 Nonvolatile memory element and nonvolatile memory device
05/27/2010US20100129995 Method of forming variable resistance memory device
05/27/2010US20100129947 Resistance-variable memory device, method for fabricating the same and memory system including the same
05/27/2010US20100127235 Information recording/reproducing device
05/27/2010US20100127234 Phase change memory device having an increased sensing margin for cell efficiency and method for manufacturing the same
05/27/2010US20100127233 Method for controlled formation of the resistive switching material in a resistive switching device and device obtained thereof
05/27/2010US20100127232 Non-volatile memory
05/26/2010CN1992368B Semiconductor device and method of manufacturing the same
05/26/2010CN1983660B Method of manufacturing non-volatile memory element
05/26/2010CN101714610A Si/Sb80Te20 nanometer compound multi-layer phase change film and method for preparing same
05/26/2010CN101714609A Chalcogenide material memory device and manufacturing method thereof
05/26/2010CN101180683B Semiconductor device
05/25/2010US7723714 Programmable-resistance memory cell
05/25/2010US7723713 Layered resistance variable memory device and method of fabrication
05/20/2010US20100124096 Electric element, switching element, memory element, switching method and memory method
05/20/2010US20100123542 Nano-dimensional non-volatile memory cells
05/20/2010US20100123117 Non volatile memory cells including a filament growth layer and methods of forming the same
05/20/2010US20100123116 Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
05/20/2010US20100123115 Interconnect And Method For Mounting An Electronic Device To A Substrate
05/19/2010CN101106172B An erasable and readable inorganic film electrical dual stabilization part and its making method
05/19/2010CN101101963B A high status ratio inorganic film dual stabilization part and its making method
05/18/2010US7719082 Memory device and storage apparatus
05/18/2010US7718988 Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
05/18/2010US7718987 Electrically writable and erasable memory medium having a data element with two or more multiple-layer structures made of individual layers
05/13/2010US20100117050 Phase-change memory element
05/13/2010US20100117048 Memory cell access device having a pn-junction with polycrystalline and single-crystal semiconductor regions
05/13/2010US20100117047 Non-volatile semiconductor storage device and method of manufacturing the same
05/13/2010US20100117040 Optical Ovonic Threshold Switch
05/12/2010EP2184793A1 Switching element and application of the same
05/12/2010DE102008050762A1 Shifting sequence electronic component for data storage and electronic switching element of integrated circuit, has dielectric layer between semiconducting or metallically conductive layers
05/12/2010CN1967896B Insulated phase change memory device and method for manufacturing the same
05/12/2010CN101030623B Non-volatile memory device having two oxide layers
05/11/2010US7714311 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
05/06/2010WO2010050118A1 Solid-state memory manufacturing method
05/06/2010WO2010050117A1 Solid-state memory
05/06/2010WO2010050094A1 Nonvolatile semiconductor storage device and manufacturing method therefor
05/06/2010US20100112774 Variable Resistance Memory Device and Methods of Forming the Same
05/06/2010US20100110764 Programmable metallization cell switch and memory units containing the same
05/06/2010US20100109656 Magnetic Tunnel Junction and Memristor Apparatus
05/06/2010US20100108980 Resistive memory array
05/06/2010US20100108979 Semiconductor device and manufacturing method thereof
05/06/2010US20100108977 Nonvolatile programmable switch device using phase-change memory device and method of manuracturing the same
05/06/2010US20100108975 Non-volatile memory cell formation
05/06/2010US20100108974 Phase change memory device having a diode that has an enlarged pn interfacial junction and method for manufacturing the same
05/05/2010EP1536474B1 Memory device and storage apparatus
05/05/2010CN1770494B Chalcogenide memory
05/05/2010CN1756668B Phase-change recording material and information recording medium
04/2010
04/29/2010US20100105193 Storage nodes and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the same
04/29/2010US20100102291 Carbon-based memory elements exhibiting reduced delamination and methods of forming the same
04/28/2010EP2180482A1 Storage device drive method
04/28/2010CN1784642B Chalcogenide constant current device,and its method of fabrication and operation
04/28/2010CN101699627A Nonvolatile storage array and preparation method thereof
04/27/2010US7704787 Methods for fabricating phase changeable memory devices
04/22/2010US20100096613 Semiconductor device
04/22/2010US20100096612 Phase change memory device having an inversely tapered bottom electrode and method for manufacturing the same
04/22/2010US20100096611 Vertically integrated memory structures
04/21/2010EP2178122A1 Memory element and memory device
04/21/2010EP2178121A1 Method for protecting and dissipating electrostatic charges on an integrated circuit
04/21/2010EP2176896A1 Solution-processed solid electrolytic layer device and fabrication
04/21/2010CN1909239B Phase change material, phase change random access memory including the same, and methods of manufacturing and operating the same
04/21/2010CN101197423B Method for making a self-converged memory material element for memory cell
04/20/2010US7700485 Electro- and electroless plating of metal in the manufacture of PCRAM devices
04/20/2010US7700430 Phase-changeable memory device and method of manufacturing the same
04/15/2010WO2010041373A1 Information recording medium, manufacturing method therefore, and sputtering target
04/15/2010US20100091558 Dielectric-Sandwiched Pillar Memory Device
04/15/2010US20100090194 Multi-bit phase-change random access memory (pram) with diameter-controlled contacts and methods of fabricating and programming the same
04/15/2010US20100090192 Method for controlled formation of the resistive switching material in a resistive switching device and device obtained thereof
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