Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
07/2010
07/22/2010US20100184258 Method and apparatus for forming an integrated circuit electrode having a reduced contact area
07/22/2010US20100182821 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
07/22/2010US20100181657 Nonvolatile memory cell comprising a reduced height vertical diode
07/22/2010US20100181548 Solid-state memory and semiconductor device
07/22/2010US20100181547 Semiconductor device and method of manufacturing the same
07/21/2010EP2209139A1 Non-volatile memory element and non-volatile semiconductor device using the non-volatile memory element
07/21/2010CN101783391A Nano-composite phase change material, preparation method thereof and application thereof as phase change memory
07/21/2010CN101783390A Memory cell having improved mechanical stability and manufacturing method thereof
07/21/2010CN101783389A Resistive random access memory with asymmetric electrical properties
07/21/2010CN101783388A Non-volatile resistor change type memory with self-rectification effect
07/21/2010CN101783356A Semiconductor memory structures
07/21/2010CN101395717B Resistance-varying type element, semiconductor device, and method for manufacturing the element
07/21/2010CN101393964B Phase change memory with various grain sizes and forming method thereof
07/21/2010CN101383337B Programmable phase change material structure and its forming method
07/21/2010CN101364634B Semiconductor device
07/21/2010CN101339973B Reverse bias voltage induced double stable state nonvolatile semiconductor memory
07/21/2010CN101295763B Resistive memory device and stack structure of resistive random access memory device
07/20/2010US7759665 PCRAM device with switching glass layer
07/15/2010WO2010079829A1 Switching element and method for manufacturing same
07/15/2010WO2010079827A1 Semiconductor device and manufacturing method therefor
07/15/2010WO2010079816A1 Semiconductor device and manufacturing method therefor
07/15/2010US20100177555 Variable resistance nonvolatile storage device
07/15/2010US20100176368 Method of manufacturing semiconductor memory device, and semiconductor memory device
07/15/2010US20100176367 Memory cell having dielectric memory element
07/15/2010US20100176366 Nonvolatile memory cell including carbon storage element formed on a silicide layer
07/15/2010US20100176365 Resistance variable memory devices and methods of fabricating the same
07/15/2010US20100176364 Electronic device, and method of manufacturing an electronic device
07/15/2010US20100176363 Variable resistance element and semiconductor device provided with the same
07/14/2010EP2207216A1 Chalcogenide film and method for producing the same
07/14/2010CN101779287A Resistance change nonvolatile memory device
07/14/2010CN101779248A Storage device drive method
07/14/2010CN101776718A Method for fast representing phase-change materials and dielectric layers
07/14/2010CN101000944B Phase storage element and manufacturing method thereof
07/13/2010US7755077 Semiconductor memory device
07/13/2010US7754516 Fabricating sub-lithographic contacts
07/08/2010WO2010078467A1 Modulation of resistivity in carbon-based read-writeable materials
07/08/2010WO2010076837A1 Avoiding degradation of chalcogenide material during definition of multilayer stack structure
07/08/2010WO2010076827A1 Method for fabricating a phase-change memory cell
07/08/2010US20100171091 Memory array for increased bit density and method of forming the same
07/08/2010US20100171090 Semiconductor phase-change memory device
07/08/2010US20100171089 Dielectric layers and memory cells including metal-doped alumina
07/08/2010US20100171088 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
07/08/2010US20100171087 Semiconductor device and process for producing the same
07/07/2010EP2204860A1 Forming a carbon passivated ovonic threshold switch
07/07/2010EP2204851A2 Ovonic threshold switch film composition for TSLAGS material
07/07/2010CN101771131A Method for fabricating resistive memory device
07/06/2010US7750431 Phase change storage cells for memory devices
07/06/2010US7750332 Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device
07/06/2010US7749853 Method of forming a variable resistance memory device comprising tin selenide
07/01/2010WO2010074785A1 Dual insulating layer diode with asymmetric interface state and method of fabrication
07/01/2010WO2010073904A1 Semiconductor storage element manufacturing method and sputter device
07/01/2010WO2010073897A1 Variable resistance element
07/01/2010US20100163836 Low-volume phase-change material memory cell
07/01/2010US20100163835 Controlling the circuitry and memory array relative height in a phase change memory feol process flow
07/01/2010US20100163834 Contact structure, method of manufacturing the same, phase changeable memory device having the same, and method of manufacturing phase changeable memory device
07/01/2010US20100163833 Electrical fuse device based on a phase-change memory element and corresponding programming method
07/01/2010US20100163832 Self-aligned nano-cross-point phase change memory
07/01/2010US20100163831 Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
07/01/2010US20100163830 Phase-change random access memory capable of reducing thermal budget and method of manufacturing the same
07/01/2010US20100163828 Phase change memory devices and methods for fabricating the same
07/01/2010US20100163826 Method for active pinch off of an ovonic unified memory element
07/01/2010US20100163825 Forming phase change memories with a breakdown layer sandwiched by phase change memory material
07/01/2010US20100163822 Ovonic threshold switch film composition for tslags material
06/2010
06/30/2010EP2202816A1 Method for manufacturing a resistive switching memory device and devices obtained thereof
06/30/2010EP1483795B1 Manufacturing methods for resistance variable material cells
06/30/2010CN101765914A Storage element and storage device
06/30/2010CN101764197A Method for manufacturing nano-sized phase change memory
06/30/2010CN101764196A Method for manufacturing nano-scale phase change memory
06/30/2010CN101764195A Method for making nano-sized phase change memory
06/30/2010CN101764194A Phase change storage device and manufacturing method thereof
06/30/2010CN101764089A Method of forming phase change layer and method of manufcturing phase change memory device using the same
06/30/2010CN101510584B Multi-state phase-change memory unit element and preparation method
06/29/2010US7745808 Differential negative resistance memory
06/24/2010WO2010070895A1 Non-volatile storage device and writing-in method for same
06/24/2010US20100155688 Electric device with nanowires comprising a phase change material
06/24/2010US20100155687 Method for manufacturing a resistive switching memory device and devices obtained thereof
06/24/2010US20100155686 Memristive device
06/24/2010US20100155685 Electronic component, and a method of manufacturing an electronic component
06/23/2010CN101752498A Ga2Te3 phase-change memory element and preparation method thereof
06/23/2010CN101752497A Phase-change storage unit with low power consumption and high stability and preparation method thereof
06/23/2010CN101359649B Programmable through-hole devices, maufacturing method thereof and integrated logic circuit
06/17/2010WO2010067585A1 Resistance change element and nonvolatile semiconductor storage device using same
06/17/2010US20100151665 Small electrode for phase change memories
06/17/2010US20100148143 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element
06/17/2010US20100148142 Aluminum copper oxide based memory devices and methods for manufacture
06/16/2010CN1925184B Nonvolatile memory devices and methods of manufacturing the same
06/16/2010CN101743649A Non-volatile memory device
06/16/2010CN101740718A Multi-resistance state resistor random-access memory unit and preparation method thereof
06/16/2010CN101740717A CuxO-based resistor type storage and preparation method thereof
06/16/2010CN101740716A Phase-change memory element and its forming method
06/16/2010CN101471421B Dyadic transition group metallic oxide non-volatilization electric resistance transition type memory
06/16/2010CN101335327B Method for controlling phase-change material or phase-change memory unit volume change and corresponding construction
06/16/2010CN101241926B Programmable phase change material structure and its forming method
06/16/2010CN101027797B Electric device with nanowires comprising a phase change material and manufacturing method thereof
06/15/2010US7738280 Resistive nonvolatile memory element, and production method of the same
06/10/2010WO2010064446A1 Nonvolatile memory element and nonvolatile memory device
06/10/2010WO2010064444A1 Nonvolatile memory element and manufacturing method therefor
06/10/2010WO2010064410A1 Nonvolatile memory element
06/10/2010WO2010064340A1 Nonvolatile storage device and method for manufacturing the device
06/10/2010US20100142261 Information recording and reproducing apparatus
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