Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
09/2010
09/08/2010CN101828236A Nonvolatile semiconductor memory device
09/08/2010CN101826596A Production method of phase-change memory
09/08/2010CN101826595A WOx-based resistance type memory and preparation method thereof
09/08/2010CN101826546A Resistor conversion memory cell limited by nano-scale side wall and manufacturing method thereof
09/08/2010CN101826463A Schottky diode and phase-change memory which share metal layer and manufacturing method thereof
09/08/2010CN101572290B Method for preparing columnar nanometer heating electrode
09/08/2010CN101521177B Method for preparing transverse phase transition memory by using single-walled carbon nanotube as electrode
09/08/2010CN101281951B Thin-film material and method for manufacturing non-volatility resistor random memory
09/08/2010CN101246950B Memory element with reduced-current phase change element
09/08/2010CN101237026B Memory device and its manufacture method
09/07/2010US7791924 Memory device using abrupt metal-insulator transition and method of operating the same
09/02/2010WO2010098463A1 Organic switching element and method for manufacturing same
09/02/2010US20100221879 Methods of Manufacturing Phase-Changeable Memory Devices
09/02/2010US20100220520 Multi-bit phase change memory devices
09/02/2010US20100219392 Nonvolatile semiconductor memory device and manufacturing method for same
09/02/2010US20100219391 Layered resistance variable memory device and method of fabrication
09/02/2010DE112008003056T5 Chalcogenid-Film und Verfahren zu dessen Herstellung Chalcogenide film and process for its preparation
09/01/2010EP2224508A2 Nanoscopic wire-based devices, arrays, and methods of their manufacture
09/01/2010CN101820048A Phase change memory device and manufacturing method thereof
09/01/2010CN101083300B Organic memory devices including organic material and fullerene layers and related methods
08/2010
08/31/2010US7787279 Integrated circuit having a resistive memory
08/31/2010US7786463 Non-volatile multi-bit memory with programmable capacitance
08/31/2010US7785976 Method of forming a memory device incorporating a resistance-variable chalcogenide element
08/26/2010WO2010095296A1 Resistive memory element and use thereof
08/26/2010WO2010095295A1 Resistive memory element and use thereof
08/26/2010US20100213432 Phase change memory device and fabrication thereof
08/25/2010CN1996608B Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories
08/25/2010CN101816070A Current reduction element, memory element, and methods for manufacture of the elements
08/25/2010CN101814579A Preparation method for high density phase-change memory
08/25/2010CN101814578A A semiconductor element and a fabricating method thereof
08/25/2010CN101556986B Multi-state resistive switching material, thin film prepared therewith, multi-sate resistive switching memory element and application of memory element in memory device
08/25/2010CN101330128B Organic non-volatile memory material and memory device
08/19/2010WO2010048408A3 Carbon-based memory elements exhibiting reduced delamination and methods of forming the same
08/19/2010US20100208509 Nonvolatile semiconductor memory device, and production method thereof
08/19/2010US20100207095 Resistor random access memory cell with l-shaped electrode
08/19/2010US20100207094 Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element
08/19/2010US20100207093 Semiconductor device and method of manufacturing semiconductor device
08/19/2010US20100207092 Phase change memory device switched by schottky diodes and method for manufacturing the same
08/19/2010US20100207091 Switching element and manufacturing method thereof
08/19/2010US20100207090 Solid memory
08/19/2010DE112008001618T5 Elektronisches Bauteil und Verfahren zur Herstellung eines solchen Electronic component and method for manufacturing such a
08/18/2010EP2219221A1 Nonvolatile storage device and method for manufacturing the same
08/18/2010CN1697195B Memory element and memory device
08/18/2010CN101809775A Chalcogenide film and method for producing the same
08/18/2010CN101807666A Chalcogenide glass constant current device, and its method of fabrication and operation
08/18/2010CN101807665A Crystallization temperature-adjustable Ga30Sb70/Sb80Te20 nano composite multi-layer phase-change thin-film material
08/18/2010CN101351888B Electric element, memory device and semiconductor integrated circuit
08/18/2010CN101257086B Memory device with ring-shaped upper end of bottom electrode and manufacturing method thereof
08/18/2010CN101026177B Nonvolatile memory device and its operating method
08/12/2010WO2010090900A1 Method of forming memory cell using gas cluster ion beams
08/12/2010WO2010090128A1 Solid-state memory
08/12/2010WO2010090002A1 Non-volatile memory element
08/12/2010US20100202193 Non-volatile memory device
08/12/2010US20100202186 Semiconductor memory device, method of manufacturing the same, and method of screening the same
08/12/2010US20100200832 Resistance variable element
08/12/2010US20100200831 Non-volatile memory devices and methods of fabricating the same
08/12/2010US20100200830 Memory device having self-aligned cell structure
08/12/2010US20100200829 Semiconductor Phase Change Memory Using Multiple Phase Change Layers
08/12/2010US20100200828 Solid memory
08/11/2010CN101800282A Application of strontium stannate titanate film
08/11/2010CN101800236A Semiconductor memory structure and manufacturing method thereof
08/11/2010CN101145598B Method for improving CuxO electric resistance memory fatigue property
08/10/2010US7772583 Memory devices and methods of forming the same
08/05/2010WO2010088614A1 Programmable metallization memory cell with layered solid electrolyte structure
08/05/2010WO2010087211A1 Non-volatile memory element, non-volatile memory device, non-volatile semiconductor device, and non-volatile memory element manufacturing method
08/05/2010WO2010087000A1 Process for fabricating nonvolatile storage
08/05/2010WO2010086916A1 Resistance change element and production method of same
08/05/2010US20100195371 Memory element and memory device
08/05/2010US20100193765 Inverted variable resistance memory cell and method of making the same
08/05/2010US20100193764 Semiconductor device and method of manufacturing the same
08/05/2010US20100193763 Current constricting phase change memory element structure
08/05/2010US20100193761 Programmable metallization memory cell with layered solid electrolyte structure
08/05/2010US20100193760 Current restricting element, memory apparatus incorporating current restricting element, and fabrication method thereof
08/05/2010US20100193759 Reduced power consumption phase change memory and methods for forming the same
08/05/2010US20100193757 Two-terminal resistance switching device and semiconductor device
08/04/2010CN1967897B A pipe shaped phase change memory forming method
08/04/2010CN101796588A 3d r/w cell with reduced reverse leakage and method of making thereof
08/04/2010CN101794863A Resistance memory device
08/04/2010CN101794862A Manufacturing method of vertical phase-change memory
08/04/2010CN101794861A Semiconductor storage device and method of manufacturing the same
08/04/2010CN101794860A Conductive bridging random access memory element and manufacturing method thereof
08/04/2010CN101794807A Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same
08/04/2010CN101521260B Nano composite phase-change material and preparation method thereof
08/04/2010CN101494196B Method for preparing low-voltage, low power consumption, high-density phase-change memory cell array
08/04/2010CN101236985B Memory cell device with coplanar electrode surface and method
08/04/2010CN101075630B Phase change memory device and manufacturing method
08/03/2010US7767994 Phase-change random access memory device and method of manufacturing the same
08/03/2010US7767499 Method to form upward pointing p-i-n diodes having large and uniform current
07/2010
07/29/2010WO2010084774A1 Nonvolatile memory cell, resistance variable nonvolatile memory device and method for designing nonvolatile memory cell
07/29/2010US20100188884 Nonvolatile memory element, nonvolatile memory apparatus, and method of writing data to nonvolatile memory element
07/29/2010US20100187493 Semiconductor storage device and method of manufacturing the same
07/29/2010US20100187492 Multi-bit memory device having reristive material layers as storage node and methods of manufacturing and operating the same
07/28/2010CN101789492A Preparation method of plane phase change memory
07/28/2010CN101789491A Phase-change memory cell structure, preparation method thereof and preparation method of phase-change memory arrays
07/28/2010CN101789490A Ferroelectric oxide/semiconductor composite film diode resistance change memory
07/28/2010CN101789489A Phase change memory cell and method of formation
07/28/2010CN101047230B Phase change memory unit structure, phase change memory unit and its forming method
07/27/2010US7763886 Doped phase change material and pram including the same
07/27/2010US7763878 Phase changeable memory device structures
07/27/2010US7763158 Electrodeposition of metal and/or metal ions from a solid solution upon application of a suitable electric field; relates to programmable surface control devices whose physical features, controlled by the presence or absence of a metallic electrodeposit upon application of a bias
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