Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
10/2010
10/20/2010CN101488557B Si-Sb-Se phase changing thin-film material used for phase changing memory
10/14/2010WO2010118302A2 Diamond type quad-resistor cells of pram
10/14/2010WO2010117911A2 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
10/14/2010WO2010116754A1 Method of driving non-volatile memory elements
10/14/2010WO2010115924A1 METHOD FOR MANUFACTURING A MEMORY ELEMENT COMPRISING A RESISTIVITY-SWITCHING NiO LAYER AND DEVICES OBTAINED THEREOF
10/14/2010US20100259970 Resistance change memory device
10/14/2010US20100259967 Memory cell
10/14/2010US20100259966 Nonvolatile memory element, nonvolatile memory apparatus, and nonvolatile semiconductor apparatus
10/14/2010US20100258783 Semiconductor memory device and manufacturing method of the same
10/14/2010US20100258782 Resistive-switching memory elements having improved switching characteristics
10/14/2010US20100258780 Phase-change random access memory device and method of manufacturing the same
10/14/2010US20100258779 Nonvolatile memory device and manufacturing mehtod thereof
10/14/2010US20100258778 Resistive memory device and method for manufacturing the same
10/14/2010DE102004007633B4 Speicherzelle, Halbleiter-Speicherbauelement und Verfahren zur Herstellung einer Speicherzelle Memory cell, the semiconductor memory device and method for fabricating a memory cell
10/13/2010EP2239796A2 Method of fabricating a resistive switching element including nanogap electrodes
10/13/2010EP2239795A1 Method for manufacturing a memory element comprising a resistivity-switching NiO layer and devices obtained thereof
10/13/2010EP2239794A2 Nanoscopic wire-based devices, arrays, and methods of their manufacture
10/13/2010CN1996634B Method for fabricating phase change memory device
10/13/2010CN101861649A Nonvolatile memory device and manufacturing method therefor
10/13/2010CN101859871A Storage element, method of manufacturing same, and semiconductor storage device
10/13/2010CN101857206A Metal nitride with resistance change nature and application thereof
10/13/2010CN101599530B Memory cell of resistive random access memory (RRAM) and preparation method thereof
10/13/2010CN101477987B Manufacturing process of tri-dimension stacked resistance conversion memory
10/13/2010CN101312230B Phase change storage apparatus and method of manufacture
10/13/2010CN101241966B Resistor random access memory cell device
10/13/2010CN101127386B Self-aligning structure and method for limiting resistance random access memorizer melting point
10/13/2010CN101069296B Dielectric antifuse for electro-thermally programmable device and its production method
10/12/2010US7812333 Integrated circuit including resistivity changing material having a planarized surface
10/12/2010US7812332 Phase change memory device and method of forming the same
10/12/2010US7811885 Method for forming a phase change device
10/07/2010WO2010112985A1 Electrochromic thin film transistors with lateral or vertical structure using functionalized or non-functionalized substrates and method of manufacturing same
10/07/2010US20100252799 Apparatus of memory array using finfets
10/07/2010US20100252798 Storage element, method of manufacturing same, and semiconductor storage device
10/07/2010US20100252797 Nonvolatile memory device
10/07/2010US20100252796 Resistance change element and method of manufacturing the same
10/07/2010US20100252795 Phase change memory device
10/07/2010US20100252794 Composite film for phase change memory devices
10/06/2010CN101855724A Chalcogenide film and method for producing the same
10/06/2010CN101853922A Low-voltage resistive random access memory and preparation method thereof
10/06/2010CN101853921A Reversible resistivity-switching metal oxide or nitride layer with added metal
10/05/2010US7807991 Switching element
10/05/2010US7807497 Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices
10/05/2010US7807494 Method for producing a chalcogenide-semiconductor layer of the ABC2 type with optical process monitoring
09/2010
09/30/2010WO2010109876A1 Method of driving resistance-change element, and non-volatile memory device
09/30/2010WO2010109803A1 Resistance-change non-volatile memory device
09/30/2010US20100244023 Programmable resistance memory
09/30/2010US20100243982 Variable resistance non-volatile memory cells and methods of fabricating same
09/30/2010US20100243981 Phase-change random access memory device
09/30/2010US20100243980 Nonvolatile memory device and method for manufacturing nonvolatile memory device
09/29/2010EP2234160A1 Nonvolatile semiconductor storage device, and method for manufacturing the same
09/29/2010EP2232602A1 Multilayer structure comprising a phase change material layer and a method of producing the same
09/29/2010CN1954428B Semiconductor memory
09/29/2010CN101847688A Method for decreasing discreteness of resistance value of resistance change memory
09/29/2010CN101847687A Phase-change memory element and manufacturing method thereof
09/29/2010CN101847647A Nonvolatile semiconductor memory device and manufacturing method for same
09/29/2010CN101159310B Wet oxidation preparation method of Cu2O resistor memory
09/29/2010CN101159284B WOX resistor memory of self-aligning forming upper electrode and manufacturing method thereof
09/28/2010US7804084 Phase change memory elements having a confined portion of phase change material on a recessed contact
09/23/2010WO2010106305A1 Phase change devices and methods for their manufacture
09/23/2010US20100238720 Electronic Device, And Method of Operating An Electronic Device
09/23/2010US20100238710 Nonvolatile memory device
09/23/2010US20100238704 Semiconductor memory device, method of manufacturing the same, and method of screening the same
09/23/2010US20100238703 Information recording/reproducing device
09/23/2010US20100237320 Nonvolatile semiconductor memory device and method for manufacturing the same
09/23/2010US20100237319 Nonvolatile semiconductor memory device
09/23/2010US20100237318 Phase change memory device using carbon nanotube
09/23/2010US20100237317 Resistive random access memory, nonvolatile memory, and method of manufacturing resistive random access memory
09/23/2010US20100237316 4f2 self align side wall active phase change memory
09/23/2010US20100237314 Resistance change type memory
09/23/2010US20100237313 Nonvolatile semiconductor memory device and manufacturing method thereof
09/23/2010US20100237312 Nonvolatile memory device
09/22/2010CN101842897A Nonvolatile semiconductor storage device and method for manufacturing the same
09/22/2010CN101840995A Method for identifying connected device and electronic device using the same
09/22/2010CN101840994A Phase change random access memory and manufacturing method
09/21/2010CA2368171C Information recording medium and method for manufacturing the same
09/16/2010US20100230655 Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device
09/16/2010US20100230654 Resistive memory cell fabrication methods and devices
09/16/2010US20100230653 Phase-change memory element and method for fabricating the same
09/15/2010EP2227827A1 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
09/15/2010EP2227825A2 Memory cell with planarized carbon nanotube layer and methods of forming the same
09/15/2010EP2227824A2 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
09/15/2010EP1194960B1 Nanoscopic wire-based devices, arrays, and methods of their manufacture
09/15/2010CN101836296A Variable resistance nonvolatile memory device and memory cell formation method
09/15/2010CN101834274A Preparation method of variable resistance metal nitride materials
09/15/2010CN101834273A Unit structure for reducing power consumption of phase-change memory and preparation method thereof
09/15/2010CN101834272A Non-volatilisation memory element based on (Bi2O3)1-X(Y2O3)X solid electrolyte film and preparation method thereof
09/15/2010CN101834198A Semiconductor memory
09/15/2010CN101572291B Storage unit structure for realizing multilevel storage and manufacture method thereof
09/15/2010CN101388435B Resistive random access memory and method for manufacturing the same
09/15/2010CN101180746B SnSe storage device and method for manufacturing the storage device
09/15/2010CN101159313B Sulfureous phase changing memory CRAM storage element
09/15/2010CN101097988B Variable resistance random access memory device containing n+ interface layer
09/14/2010US7796425 Control of set/reset pulse in response to peripheral temperature in PRAM device
09/14/2010US7795068 Method of making integrated circuit (IC) including at least one storage cell
09/10/2010WO2010101055A1 Solid memory
09/09/2010US20100226163 Method of resistive memory programming and associated devices and materials
09/09/2010US20100224850 Non-Volatile Memory Cells Employing a Transition Metal Oxide Layer as a Data Storage Material Layer and Methods of Manufacturing the Same
09/09/2010US20100224849 Oxide diode, method of manufacturing the same, and electronic device and resistive memory device including the same
09/08/2010EP1966841B1 A vertical phase change memory cell and methods for manufacturing thereof
09/08/2010CN101828262A Non-volatile memory element and non-volatile semiconductor device using the non-volatile memory element
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