Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
11/2010
11/25/2010US20100295034 Semiconductor device
11/25/2010US20100295013 Semiconductor device and method for manufacturing same
11/25/2010US20100295012 Nonvolatile memory element, and nonvolatile memory device
11/25/2010US20100295011 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
11/25/2010US20100295010 electronic device comprising a convertible structure
11/25/2010DE10297692B4 Geräte und Systeme mit Haftmaterial für programmierbare Vorrichtungen, sowie Verfahren zur Herstellung Devices and systems with pressure sensitive programmable devices and methods of making
11/25/2010DE102009022301A1 Electrical energy conversion element for use in storage unit of electric vehicle, has electrical resistor provided between electrical contacts, where phase state changing material is partially provided between electrical contacts
11/24/2010EP2122704B1 Use of lacunar spinels with tetrahedral aggregates of a transition element of the of the am4x8 type in an electronic data rewritable non volatile memory, and corresponding material
11/24/2010CN1538424B Information recording medium and its generating method
11/24/2010CN101897024A Nonvolatile memory device and fabrication method therefor
11/24/2010CN101894911A Preparation method of resistance type memory with high data retention ability
11/24/2010CN101894910A Nitride-oxide-silicon bipolar resistive random access memory based on non-stoichiometry ratio and preparation method thereof
11/24/2010CN101894909A Nanowire resistance change memory and implementation method thereof
11/24/2010CN101894908A Resistive random access memory and preparation method thereof
11/24/2010CN101894907A Method for manufacturing CuxO-based resistance memory
11/24/2010CN101894853A Phase change random access memory and manufacturing method
11/24/2010CN101540370B GeTe/Sb2Te3 multilayer nanocomposite phase transition film and preparation method
11/24/2010CN101080825B Electroless plating of metal caps for chalcogenide-based memory devices
11/23/2010US7838862 Phase random access memory with high density
11/23/2010US7838416 Method of fabricating phase change memory cell
11/18/2010US20100291748 Method for making pmc type memory cells
11/18/2010US20100289012 Organic switching element and method for producing the same
11/18/2010US20100288996 Memory arrays including memory levels that share conductors, and methods of forming such memory arrays
11/18/2010US20100288995 Semiconductor memory device and method of manufacturing the same
11/18/2010US20100288994 Method of forming memory cell using gas cluster ion beams
11/17/2010CN101887903A Phase change memory with transistor, resistor and capacitor and operating method thereof
11/17/2010CN101501851B Resistance variable element and resistance variable storage device
11/17/2010CN101313423B Memory cell comprising nickel-cobalt oxide switching element
11/17/2010CN101299453B Nano composite phase-changing material and preparation method thereof
11/17/2010CN101232076B Method for eliminating CuxO resistance memory formation voltage
11/17/2010CN101133503B Method for manufacturing an electrolyte material layer in semiconductor memory devices
11/16/2010US7834344 Nanometric structure and corresponding manufacturing method
11/16/2010US7834339 Programmable-resistance memory cell
11/16/2010US7834337 Memory device
11/16/2010US7833823 Programmable resistance memory element and method for making same
11/11/2010US20100283030 Memory devices and methods of forming the same
11/11/2010US20100283029 Programmable resistance memory and method of making same
11/11/2010US20100283028 Non-volatile resistance switching memories and methods of making same
11/11/2010US20100283027 Multi-value recording phase-change memory device, multi-value recording phase-change channel transistor, and memory cell array
11/11/2010US20100283026 Nonvolatile semiconductor memory device and manufacturing method thereof
11/11/2010US20100283025 Phase change devices
11/11/2010US20100283024 Memory Element and Method for Manufacturing the Same, and Semiconductor Device
11/11/2010DE102004025975B4 Phasenänderungsspeicherbauelement und Programmierverfahren Phase change memory device and programming method
11/10/2010EP2249351A1 Method for multilevel programming of phase change memory cells using a percolation algorithm
11/10/2010CN101882628A Rectifying device for cross array structure memory
11/10/2010CN101882627A Phase change memory device and manufacturing method thereof
11/10/2010CN101599531B Memory cell of resistive random access memory (RRAM) and preparation method thereof
11/10/2010CN101313406B Semiconductor device
11/09/2010US7829877 Memory structure with a programmable resistive element and its manufacturing process
11/09/2010US7829875 Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
11/04/2010WO2010125805A1 Method for writing to resistance-change non-volatile memory elements, and resistance-change non-volatile memory device
11/04/2010WO2010125780A1 Nonvolatile storage element and nonvolatile storage device
11/04/2010WO2010125540A2 Phase change material for use in a phase change memory device, phase change memory device, and method for adjusting a resistivity of a phase change material for use in a phase change memory device
11/04/2010US20100277969 Structures for resistive random access memory cells
11/04/2010US20100276660 Memory with high dielectric constant antifuses adapted for use at low voltage
11/04/2010US20100276659 Three-Dimensional Phase-Change Memory Array
11/04/2010US20100276658 Resistive Memory Structure with Buffer Layer
11/04/2010US20100276657 Multilayer structure comprising a phase change material layer and method of producing the same
11/04/2010US20100276656 Devices Comprising Carbon Nanotubes, And Methods Of Forming Devices Comprising Carbon Nanotubes
11/04/2010US20100276655 Voltage excited piezoelectric resistance memory cell system
11/03/2010EP2246915A1 Phase change material for a phase change memory device and method for adjusting the resistivity of the material
11/03/2010CN101878530A Nonvolatile storage element and nonvolatile storage device using same
11/03/2010CN101878529A Nonvolatile storage device and method for manufacturing the same
11/03/2010CN101878507A Method for driving resistance change element, initial processing method, and nonvolatile storage device
11/03/2010CN101877384A Low operational current phase change memory structures
11/03/2010CN101414659B Multi-state memory unit, memory device and method for forming multi-state memory unit
11/03/2010CN101252167B Programmable resistive memory cell with self-forming gap
11/02/2010US7825408 Semiconductor device
11/02/2010US7825397 Short bridge phase change memory cells
10/2010
10/28/2010US20100273306 Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device
10/28/2010US20100273305 Electro- and Electroless Plating of Metal in the Manufacture of PCRAM Devices
10/28/2010US20100271859 Nonvolatile memory element, nonvolatile semiconductor memory apparatus, and reading method and writing method therefor
10/28/2010US20100270528 Resistive random access memory device and method of same
10/27/2010EP2244293A1 Nonvolatile semiconductor storage device and method for manufacturing the same
10/27/2010EP1787329B1 Electric device comprising phase change material
10/27/2010CN101872839A Phase change memory with low power consumption of stable threshold voltage and manufacturing method thereof
10/27/2010CN101872838A Memory cell having a buried phase change region and method for fabricating the same
10/27/2010CN101872837A Resistive layer, resistive storage having same and process for preparing same
10/27/2010CN101872836A Resistor-type nonvolatile storage device and manufacturing method thereof
10/27/2010CN101872627A Information recording medium
10/27/2010CN101572292B Storage unit and method capable of realizing multi-mode storage through the integration of phase change and resistance change
10/27/2010CN101488558B M-Sb-Se phase changing thin-film material used for phase changing memory
10/27/2010CN101312232B Spin torque transfer MRAM device
10/21/2010WO2010119677A1 Resistance-change element and method of producing same
10/21/2010WO2010119671A1 Resistance-change non-volatile memory device
10/21/2010US20100265763 Memory Device Including an Electrode Having an Outer Portion With Greater Resistivity
10/21/2010US20100265762 Continuous plane of thin-film materials for a two-terminal cross-point memory
10/21/2010US20100265749 Three dimensionally stacked non volatile memory units
10/21/2010US20100264398 Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony
10/21/2010US20100264397 Memristive device with a bi-metallic electrode
10/21/2010US20100264395 Phase change memory structures and methods
10/21/2010US20100264394 Semiconductor memory and method of manufacturing the same
10/21/2010US20100264393 Nonvolatile memory device and manufacturing method thereof
10/21/2010US20100264392 Nonvolatile memory apparatus and manufacturing method thereof
10/21/2010US20100264391 Epi substrate with low doped epi layer and high doped si substrate layer for media growth on epi and low contact resistance to back-side substrate
10/20/2010CN101868855A Memory cell
10/20/2010CN101867016A Resistance type memory based on metal, zinc oxide and heavy doping silicon structure
10/20/2010CN101866942A Ring-shaped electrode and manufacturing method for same
10/20/2010CN101866940A Semiconductor memory and method of manufacturing the same
10/20/2010CN101864592A Ferroelectric metal hetero-junction based memristor and preparation method thereof
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