Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
01/2011
01/06/2011US20110001116 Back to back resistive random access memory cells
01/06/2011US20110001115 Resistive ram devices for programmable logic devices
01/06/2011US20110001114 Phase change memory cell with self-aligned vertical heater and low resistivity interface
01/06/2011US20110001113 Phase change memory structures
01/06/2011US20110001112 Nonvolatile memory device and manufacturing method thereof
01/06/2011US20110001111 Thermally insulated phase change material cells
01/06/2011US20110001110 Resistance change element and manufacturing method thereof
01/06/2011US20110001109 Nonvolatile memory element
01/06/2011US20110001108 Front to back resistive random access memory cells
01/06/2011US20110001107 Hollow gst structure with dielectric fill
01/05/2011CN101937971A Vertical phase transition storage and preparation method thereof
01/05/2011CN101937970A Phase change memory having one or more non-constant doping profiles
01/05/2011CN101937969A RRAM (Resistance Random-Access Memory) and preparation method thereof
01/04/2011US7863597 Resistance variable memory devices with passivating material
12/2010
12/30/2010US20100328996 Phase change memory having one or more non-constant doping profiles
12/30/2010US20100327254 Methods to improve electrode diffusions in two-terminal non-volatile memory devices
12/30/2010US20100327253 Nonvolatile semiconductor memory device
12/30/2010US20100327252 Phase change memory apparatus and fabrication method thereof
12/30/2010US20100327250 Phase change memory device and method of manufacturing the same
12/30/2010US20100327249 Phase change memory device having an improved word line resistance, and methods of making same
12/30/2010US20100327247 Method and system of using nanotube fabrics as joule heating elements for memories and other applications
12/29/2010WO2010150723A1 Variable resistance element and method for manufacturing same
12/29/2010WO2010150720A1 Semiconductor device and method for manufacturing same
12/29/2010CN101931049A Anti-fatigue phase change storage unit with low power consumption and preparation method thereof
12/29/2010CN101931048A One-time programmable memory unit, memory and operating method of one time programming unit
12/29/2010CN101931047A Method for manufacturing nonvolatile memory
12/29/2010CN101567420B Method for preparing phase transition storage
12/29/2010CN101527349B Amorphous indium and tin oxide film and application thereof in manufacturing resistive memory element
12/29/2010CN101504969B Production method for phase change memory with novel electrode structure
12/29/2010CN101290970B Rewritable electrical storage with inorganic thin film and preparing method thereof
12/29/2010CN101237025B Nonvolatile memory devices and methods of fabricating the same
12/28/2010US7859025 Metal ion transistor
12/28/2010US7858980 Reduced active area in a phase change memory structure
12/23/2010WO2010147073A1 Resistive switching memory device
12/23/2010WO2010146850A1 Nonvolatile storage device and method for manufacturing same
12/23/2010US20100323492 Methods of manufacturing phase-change random access memory devices
12/23/2010US20100321979 Resistance change memory
12/23/2010US20100321095 Semiconductor device, manufacturing method of semiconductor device, semiconductor chip and system
12/23/2010US20100320434 Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
12/23/2010US20100320433 Variable Resistance Memory Device and Method of Manufacturing the Same
12/23/2010US20100320432 Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices
12/22/2010EP2263252A1 Methods for etching carbon nano-tube films for use in non-volatile memories
12/22/2010EP1851809B1 Snse-based limited reprogrammable cell
12/22/2010CN101924181A Solid-state memory device, data processing system, and data processing device
12/22/2010CN101924180A Antimony-rich Si-Sb-Te sulfur group compound phase-change material for phase change memory
12/22/2010CN101924119A Vertical phase-change storage and preparation method thereof
12/22/2010CN101924072A Phase change memory having stabilized microstructure and manufacturing method
12/22/2010CN101924069A Preparation method of high-peed and high-density three-dimensional resistance conversion storage structure
12/22/2010CN101478029B EPIR effect resistor type non-volatile random memory material, preparation and use thereof
12/22/2010CN101454920B Switching device and method for manufacturing switching device
12/16/2010WO2010143571A1 Method for forming ge-sb-te film, and storage medium
12/16/2010WO2010143570A1 Method for forming ge-sb-te film, and storage medium
12/16/2010US20100315868 Semiconductor device including storage device and method for driving the same
12/16/2010US20100315867 Solid-state memory device, data processing system, and data processing device
12/16/2010US20100315857 Resistance change memory
12/16/2010US20100314602 Nonvolatile memory device and method for manufacturing same
12/16/2010US20100314601 Phase change memory having stabilized microstructure and manufacturing method
12/16/2010US20100314600 Memory Units and Related Semiconductor Devices Including Nanowires
12/16/2010US20100314599 Chalcogenide film and method of manufacturing same
12/15/2010EP2260520A2 Vertical phase change memory cell
12/15/2010CN101916823A Phase change storage device based on antimony telluride composite phase change material and preparation method thereof
12/15/2010CN101916822A Phase change memory unit device and preparation method thereof
12/15/2010CN101345289B Semiconductor device
12/15/2010CN101345288B Preparation method of CuxO resistor random memory
12/15/2010CN101267017B A tube phase change memory unit structure and its making method
12/15/2010CN101118922B CuxO resistor memory with upper electrode as protective layer and manufacturing method therefor
12/14/2010US7851777 Memory device including resistance-changing function body
12/14/2010US7851253 Phase change memory device and fabricating method
12/09/2010WO2010140296A1 Nonvolatile memory element and semiconductor memory device provided with the same
12/09/2010US20100309717 Non-volatile multi-bit memory with programmable capacitance
12/09/2010US20100309714 Methods, structures, and devices for reducing operational energy in phase change memory
12/09/2010US20100308298 Nonvolatile memory element and nonvolatile memory device incorporating nonvolatile memory element
12/09/2010US20100308297 Heterojunction diode, method of manufacturing the same, and electronic device including the heterojunction diode
12/09/2010US20100308296 Phase change memory cell with self-aligned vertical heater
12/08/2010CN1983615B Phase-change memory device and method of manufacturing same
12/08/2010CN1714461B Vertical elevated pore phase change memory
12/08/2010CN101911296A Phase-change memory element, phase-change memory cell, vacuum treatment device, and method for manufacturing phase-change memory element
12/08/2010CN101911295A Nonvolatile semiconductor storage device, and method for manufacturing the same
12/08/2010CN101908373A Resistance conversion memory with read-voltage bias NMOS (N-channel Metal-Oxide Semiconductor) transistor
12/08/2010CN101369627B Solid state electrolyte memory element and manufacturing method thereof
12/08/2010CN101211959B Phase-change memory and fabrication method thereof
12/08/2010CN101142695B 相变存储器及其制造方法 The method of manufacturing a phase change memory and its
12/08/2010CN101106171B Non-volatile memory device including variable resistance material
12/07/2010US7847330 Four vertically stacked memory layers in a non-volatile re-writeable memory device
12/02/2010WO2010137339A1 Memory-cell array, nonvolatile storage device, memory-cell, and manufacturing method of memory-cell array
12/02/2010WO2010118302A3 Diamond type quad-resistor cells of pram
12/02/2010US20100302842 Semiconductor memory device, manufacturing method thereof, data processing system, and data processing device
12/02/2010US20100301305 Phase change memory device with alternating adjacent conduction contacts and fabrication method thereof
12/02/2010US20100301304 Buried silicide structure and method for making
12/02/2010US20100301303 Forming Phase-Change Memory Using Self-Aligned Contact/Via Scheme
12/02/2010US20100301302 Phase change memory device having buried conduction lines directly underneath phase change memory cells and fabrication method thereof
12/02/2010US20100301301 Semiconductor memory device
12/01/2010EP2255388A1 Information recording device and information recording/reproduction system including the same
12/01/2010EP1576677B1 Electric device comprising a layer of phase change material and method of manufacturing the same
12/01/2010CN1866570B Memory device and semiconductor device, method for driving memory device
12/01/2010CN101901869A Preparation method of resistor-type memory based on graphene oxide
12/01/2010CN101330126B Phase variation storage unit structure and method for manufacturing the same
12/01/2010CN101207178B Phase-change storage element and manufacturing method thereof
12/01/2010CN101159312B Memory cell device with circumferentially-extending memory element
11/2010
11/25/2010US20100296338 Nonvolatile memory cell, nonvolatile memory device and method for driving the same
1 ... 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 ... 85