Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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02/17/2011 | US20110037047 Programmable metallization cells and methods of forming the same |
02/17/2011 | US20110037046 Resistance-change memory and method of manufacturing the same |
02/17/2011 | US20110037045 Nonvolatile memory device and method for manufacturing the same |
02/17/2011 | US20110037044 Information recording device and information recording/reproduction system including the same |
02/17/2011 | US20110037043 Nonvolatile memory device and method of manufacturing the same |
02/16/2011 | EP2284840A2 Memory using mixed valence conductive oxides |
02/16/2011 | CN101978496A Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element |
02/16/2011 | CN101976726A Preparation method of phase change memory |
02/16/2011 | CN101976725A SiO2/Sb80Te20 nano composite multi-layered phase-change film material with adjustable crystallization temperature and preparation method thereof |
02/16/2011 | CN101976724A SPICE model system of phase change memory cell |
02/16/2011 | CN101976676A Three-dimensional nonvolatile memory array and preparation method thereof |
02/16/2011 | CN101582485B Doping modified phase change material and phase change storage unit containing same and preparation method thereof |
02/16/2011 | CN101226988B Method for reducing CuxO resistance memory write operation current |
02/10/2011 | US20110032749 NAND Based Resistive Sense Memory Cell Architecture |
02/10/2011 | US20110032743 Colloidal-Processed Silicon Particle Device |
02/10/2011 | US20110031469 Semiconductor device |
02/10/2011 | US20110031467 Information recording and reproducing apparatus |
02/10/2011 | US20110031465 Resistance variable element and manufacturing method thereof |
02/10/2011 | US20110031463 Resistance-change memory |
02/10/2011 | US20110031462 Electronic Component, And A Method of Manufacturing An Electronic Component |
02/10/2011 | US20110031461 Phase change memory device |
02/10/2011 | US20110031460 Self-Aligned Memory Cells and Method for Forming |
02/10/2011 | US20110031459 Information recording and reproducing device |
02/09/2011 | CN101971382A Multilayer structure comprising a phase change material layer and a method of producing the same |
02/09/2011 | CN101971337A Information recording device and information recording/reproduction system including the same |
02/09/2011 | CN101969100A Nonvolatile resistance-variable storage and preparation method thereof |
02/09/2011 | CN101969099A Phase change storage unit and method for manufacturing heating layer thereof |
02/09/2011 | CN101320784B Write-Once Read-Many electric storage member and preparation method thereof |
02/08/2011 | US7884349 Selection device for re-writable memory |
02/03/2011 | WO2011013344A1 Variable-resistance non-volatile memory device and write method for same |
02/03/2011 | WO2011013255A1 Nonvolatile storage device |
02/03/2011 | WO2011011912A1 Phase change memory and manufacturing method thereof |
02/03/2011 | US20110026297 Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory device |
02/03/2011 | US20110026294 Information recording and reproducing device |
02/03/2011 | US20110024716 Memristor having a nanostructure in the switching material |
02/03/2011 | US20110024715 Method of fabricating ag-doped te-based nano-material and memory device using the same |
02/03/2011 | US20110024714 Nanoscale Three-Terminal Switching Device |
02/03/2011 | US20110024713 Nonvolatile memory device and method for manufacturing same |
02/03/2011 | US20110024711 Apparatus for reducing photodiode thermal gain coefficient and method of making same |
02/03/2011 | US20110024710 Memristor with a non-planar substrate |
02/02/2011 | EP2279523A1 Memory cells, memory cell constructions and memory cell programming methods |
02/02/2011 | CN101964395A Method for realizing multi-valued resistance memory |
02/02/2011 | CN101964394A Method for preparing phase change unit of phase change memory |
02/02/2011 | CN101546809B Memory devices and methods for manufacturing the same |
01/27/2011 | DE112004000060B4 Schaltelemente Switching elements |
01/26/2011 | EP2278635A2 Method of making memory with resistivity changing material |
01/26/2011 | EP2277201A1 Sidewall structured switchable resistor cell |
01/26/2011 | EP2277200A1 Carbon nano-film reversible resistance-switchable elements and methods of forming the same |
01/26/2011 | EP2277174A2 Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods |
01/26/2011 | EP1820226B1 Dielectric antifuse for electro-thermally programmable device |
01/26/2011 | CN101960595A 非易失性存储元件 Non-volatile storage elements |
01/26/2011 | CN101960594A Nonvolatile memory device and its manufacturing method |
01/26/2011 | CN101958400A Flexible resistance change memory and manufacturing method thereof |
01/26/2011 | CN101958399A Phase change memory and method for manufacturing the same |
01/26/2011 | CN101958398A Thermal protect pcram structure and methods for making |
01/26/2011 | CN101958397A Manufacture method of resistor storage |
01/26/2011 | CN101958396A Device for forming phase change material and system for manufacturing phase change memory |
01/26/2011 | CN101958395A Phase transformation random access memory and manufacturing method thereof |
01/26/2011 | CN101958338A Phase change random access memory and manufacturing method and programming method thereof |
01/26/2011 | CN101958337A Phase change random access memory and manufacturing method thereof |
01/26/2011 | CN101958335A Phase change random access memory and manufacturing method and programming method thereof |
01/26/2011 | CN101562229B Resistance-variable storing device |
01/26/2011 | CN101529608B Damascene metal-insulator-metal (mim) device with improved scaleability |
01/25/2011 | US7876605 Phase change memory, phase change memory assembly, phase change memory cell, 2D phase change memory cell array, 3D phase change memory cell array and electronic component |
01/25/2011 | US7875883 Electric device using solid electrolyte |
01/25/2011 | US7875873 Phase change materials and associated memory devices |
01/20/2011 | WO2011008653A1 Non-volatile memory with active ionic interface region |
01/20/2011 | WO2011008651A1 Pcmo non-volatile resitive memory with improved switching |
01/20/2011 | WO2011008385A1 Cross point non-volatile memory devices with a plurality of pillars having rounded corners and method of manufacturing |
01/20/2011 | WO2011007538A1 Variably resistant element and variably resistant memory device |
01/20/2011 | US20110012084 Resistor random access memory cell with reduced active area and reduced contact areas |
01/20/2011 | US20110012082 Electronic component comprising a convertible structure |
01/20/2011 | US20110012081 Semiconductor memory device |
01/19/2011 | EP2276083A1 Method for fabricating an integrated circuit with line-lithography processes and integrated circuit fabricated with line-lithography processes |
01/19/2011 | CN101952986A An electronic component, and a method of manufacturing an electronic component |
01/19/2011 | CN101952954A Semiconductor device, semiconductor device manufacturing method, semiconductor chip and system |
01/19/2011 | CN101335330B Memory device with tungsten compound memory unit and processing method thereof |
01/19/2011 | CN101183681B Bistable resistance random access memory structure for enhanced retention |
01/18/2011 | USRE42040 Switching element method of driving switching element rewritable logic integrated circuit and memory |
01/13/2011 | WO2011004448A1 Semiconductor storage device and method for manufacturing same |
01/13/2011 | WO2010117911A3 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines |
01/13/2011 | US20110007555 Resistance change element, semiconductor memory device, manufacturing method and driving method thereof |
01/13/2011 | US20110007554 Semiconductor device |
01/13/2011 | US20110006279 Phase change memory |
01/13/2011 | US20110006278 Variable resistance non-volatile memory device and method for manufacturing the same |
01/13/2011 | US20110006277 Information recording and reproducing device |
01/13/2011 | US20110006276 Schottky diode switch and memory units containing the same |
01/13/2011 | US20110006275 Non-volatile resistive sense memory |
01/13/2011 | DE102005025209B4 Halbleiterspeicherbauelement, elektronisches System und Verfahren zur Herstellung eines Halbleiterspeicherbauelements A semiconductor memory device, an electronic system and method for fabricating a semiconductor memory device |
01/12/2011 | EP2272113A2 Multiple bit phase change memory cell |
01/12/2011 | CN1550048B Non-volatile adjustable resistor device and programmable memory cell manufacture method |
01/12/2011 | CN101946321A Nonvolatile semiconductor storage device and method for manufacturing the same |
01/12/2011 | CN101946285A Nonvolatile storage device and method for writing into the same |
01/12/2011 | CN101944569A Method for making non-volatile memory by using MIM capacitor structure |
01/12/2011 | CN101944568A Phase change memory cell with self-aligned vertical heater and low resistivity interface |
01/12/2011 | CN101501849B Storage element, memory device and semiconductor integrated circuit |
01/11/2011 | US7869249 Complementary bit PCRAM sense amplifier and method of operation |
01/11/2011 | US7868310 Resistance variable memory device and method of fabrication |
01/06/2011 | WO2011000316A1 Nanostructure quick-switch memristor and method of manufacturing the same |
01/06/2011 | US20110002154 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element |