Patents
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
02/2011
02/17/2011US20110037047 Programmable metallization cells and methods of forming the same
02/17/2011US20110037046 Resistance-change memory and method of manufacturing the same
02/17/2011US20110037045 Nonvolatile memory device and method for manufacturing the same
02/17/2011US20110037044 Information recording device and information recording/reproduction system including the same
02/17/2011US20110037043 Nonvolatile memory device and method of manufacturing the same
02/16/2011EP2284840A2 Memory using mixed valence conductive oxides
02/16/2011CN101978496A Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
02/16/2011CN101976726A Preparation method of phase change memory
02/16/2011CN101976725A SiO2/Sb80Te20 nano composite multi-layered phase-change film material with adjustable crystallization temperature and preparation method thereof
02/16/2011CN101976724A SPICE model system of phase change memory cell
02/16/2011CN101976676A Three-dimensional nonvolatile memory array and preparation method thereof
02/16/2011CN101582485B Doping modified phase change material and phase change storage unit containing same and preparation method thereof
02/16/2011CN101226988B Method for reducing CuxO resistance memory write operation current
02/10/2011US20110032749 NAND Based Resistive Sense Memory Cell Architecture
02/10/2011US20110032743 Colloidal-Processed Silicon Particle Device
02/10/2011US20110031469 Semiconductor device
02/10/2011US20110031467 Information recording and reproducing apparatus
02/10/2011US20110031465 Resistance variable element and manufacturing method thereof
02/10/2011US20110031463 Resistance-change memory
02/10/2011US20110031462 Electronic Component, And A Method of Manufacturing An Electronic Component
02/10/2011US20110031461 Phase change memory device
02/10/2011US20110031460 Self-Aligned Memory Cells and Method for Forming
02/10/2011US20110031459 Information recording and reproducing device
02/09/2011CN101971382A Multilayer structure comprising a phase change material layer and a method of producing the same
02/09/2011CN101971337A Information recording device and information recording/reproduction system including the same
02/09/2011CN101969100A Nonvolatile resistance-variable storage and preparation method thereof
02/09/2011CN101969099A Phase change storage unit and method for manufacturing heating layer thereof
02/09/2011CN101320784B Write-Once Read-Many electric storage member and preparation method thereof
02/08/2011US7884349 Selection device for re-writable memory
02/03/2011WO2011013344A1 Variable-resistance non-volatile memory device and write method for same
02/03/2011WO2011013255A1 Nonvolatile storage device
02/03/2011WO2011011912A1 Phase change memory and manufacturing method thereof
02/03/2011US20110026297 Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory device
02/03/2011US20110026294 Information recording and reproducing device
02/03/2011US20110024716 Memristor having a nanostructure in the switching material
02/03/2011US20110024715 Method of fabricating ag-doped te-based nano-material and memory device using the same
02/03/2011US20110024714 Nanoscale Three-Terminal Switching Device
02/03/2011US20110024713 Nonvolatile memory device and method for manufacturing same
02/03/2011US20110024711 Apparatus for reducing photodiode thermal gain coefficient and method of making same
02/03/2011US20110024710 Memristor with a non-planar substrate
02/02/2011EP2279523A1 Memory cells, memory cell constructions and memory cell programming methods
02/02/2011CN101964395A Method for realizing multi-valued resistance memory
02/02/2011CN101964394A Method for preparing phase change unit of phase change memory
02/02/2011CN101546809B Memory devices and methods for manufacturing the same
01/2011
01/27/2011DE112004000060B4 Schaltelemente Switching elements
01/26/2011EP2278635A2 Method of making memory with resistivity changing material
01/26/2011EP2277201A1 Sidewall structured switchable resistor cell
01/26/2011EP2277200A1 Carbon nano-film reversible resistance-switchable elements and methods of forming the same
01/26/2011EP2277174A2 Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
01/26/2011EP1820226B1 Dielectric antifuse for electro-thermally programmable device
01/26/2011CN101960595A 非易失性存储元件 Non-volatile storage elements
01/26/2011CN101960594A Nonvolatile memory device and its manufacturing method
01/26/2011CN101958400A Flexible resistance change memory and manufacturing method thereof
01/26/2011CN101958399A Phase change memory and method for manufacturing the same
01/26/2011CN101958398A Thermal protect pcram structure and methods for making
01/26/2011CN101958397A Manufacture method of resistor storage
01/26/2011CN101958396A Device for forming phase change material and system for manufacturing phase change memory
01/26/2011CN101958395A Phase transformation random access memory and manufacturing method thereof
01/26/2011CN101958338A Phase change random access memory and manufacturing method and programming method thereof
01/26/2011CN101958337A Phase change random access memory and manufacturing method thereof
01/26/2011CN101958335A Phase change random access memory and manufacturing method and programming method thereof
01/26/2011CN101562229B Resistance-variable storing device
01/26/2011CN101529608B Damascene metal-insulator-metal (mim) device with improved scaleability
01/25/2011US7876605 Phase change memory, phase change memory assembly, phase change memory cell, 2D phase change memory cell array, 3D phase change memory cell array and electronic component
01/25/2011US7875883 Electric device using solid electrolyte
01/25/2011US7875873 Phase change materials and associated memory devices
01/20/2011WO2011008653A1 Non-volatile memory with active ionic interface region
01/20/2011WO2011008651A1 Pcmo non-volatile resitive memory with improved switching
01/20/2011WO2011008385A1 Cross point non-volatile memory devices with a plurality of pillars having rounded corners and method of manufacturing
01/20/2011WO2011007538A1 Variably resistant element and variably resistant memory device
01/20/2011US20110012084 Resistor random access memory cell with reduced active area and reduced contact areas
01/20/2011US20110012082 Electronic component comprising a convertible structure
01/20/2011US20110012081 Semiconductor memory device
01/19/2011EP2276083A1 Method for fabricating an integrated circuit with line-lithography processes and integrated circuit fabricated with line-lithography processes
01/19/2011CN101952986A An electronic component, and a method of manufacturing an electronic component
01/19/2011CN101952954A Semiconductor device, semiconductor device manufacturing method, semiconductor chip and system
01/19/2011CN101335330B Memory device with tungsten compound memory unit and processing method thereof
01/19/2011CN101183681B Bistable resistance random access memory structure for enhanced retention
01/18/2011USRE42040 Switching element method of driving switching element rewritable logic integrated circuit and memory
01/13/2011WO2011004448A1 Semiconductor storage device and method for manufacturing same
01/13/2011WO2010117911A3 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
01/13/2011US20110007555 Resistance change element, semiconductor memory device, manufacturing method and driving method thereof
01/13/2011US20110007554 Semiconductor device
01/13/2011US20110006279 Phase change memory
01/13/2011US20110006278 Variable resistance non-volatile memory device and method for manufacturing the same
01/13/2011US20110006277 Information recording and reproducing device
01/13/2011US20110006276 Schottky diode switch and memory units containing the same
01/13/2011US20110006275 Non-volatile resistive sense memory
01/13/2011DE102005025209B4 Halbleiterspeicherbauelement, elektronisches System und Verfahren zur Herstellung eines Halbleiterspeicherbauelements A semiconductor memory device, an electronic system and method for fabricating a semiconductor memory device
01/12/2011EP2272113A2 Multiple bit phase change memory cell
01/12/2011CN1550048B Non-volatile adjustable resistor device and programmable memory cell manufacture method
01/12/2011CN101946321A Nonvolatile semiconductor storage device and method for manufacturing the same
01/12/2011CN101946285A Nonvolatile storage device and method for writing into the same
01/12/2011CN101944569A Method for making non-volatile memory by using MIM capacitor structure
01/12/2011CN101944568A Phase change memory cell with self-aligned vertical heater and low resistivity interface
01/12/2011CN101501849B Storage element, memory device and semiconductor integrated circuit
01/11/2011US7869249 Complementary bit PCRAM sense amplifier and method of operation
01/11/2011US7868310 Resistance variable memory device and method of fabrication
01/06/2011WO2011000316A1 Nanostructure quick-switch memristor and method of manufacturing the same
01/06/2011US20110002154 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
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