| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 04/20/2011 | CN102024840A Resistive memory devices including vertical transistor arrays and related fabrication methods |
| 04/20/2011 | CN102024838A Integrated circuit including electrode having recessed portion |
| 04/19/2011 | US7929331 Microelectronic programmable device and methods of forming and programming the same |
| 04/19/2011 | US7928421 Phase change memory cell with vacuum spacer |
| 04/19/2011 | US7928420 Phase change tip storage cell |
| 04/19/2011 | US7928012 Integrated circuit with upstanding stylus |
| 04/14/2011 | WO2011043448A1 Semiconductor device and method for manufacturing same |
| 04/14/2011 | US20110085376 Shunted Phase Change Memory |
| 04/14/2011 | US20110084247 Self-Aligned Bipolar Junction Transistors |
| 04/13/2011 | CN102017145A Nonvolatile memory element and nonvolatile memory device |
| 04/13/2011 | CN102013456A Method for manufacturing memory element |
| 04/13/2011 | CN102013455A Phase change structure with composite doping for phase change memory |
| 04/13/2011 | CN102013454A Method of manufacturing nonvolatile memory device |
| 04/13/2011 | CN101529595B Self-aligned, planar phase change memory elements and devices, systems employing the same and methods of forming the same |
| 04/12/2011 | US7923713 High density chalcogenide memory cells |
| 04/12/2011 | US7923342 Nonvolatile memory element and production method thereof and storage memory arrangement |
| 04/12/2011 | US7923263 Non-volatile resistance switching memory |
| 04/07/2011 | WO2010125540A3 Phase change material for a phase change memory device and method for adjusting the resistivity of the material |
| 04/07/2011 | US20110080774 Semiconductor device |
| 04/07/2011 | US20110080767 Integrated circuit including four layers of vertically stacked embedded re-writeable non-volatile two-terminal memory |
| 04/07/2011 | US20110080766 Resistive Memory Device and Manufacturing Method Thereof and Operating Method Thereof |
| 04/07/2011 | US20110079764 Information recording medium, manufacturing method therefor, and sputtering target |
| 04/07/2011 | US20110079763 Phase change devices |
| 04/06/2011 | EP2304819A1 Memory device and cbram memory having improved reliability |
| 04/06/2011 | CN102005536A Improved NiO-based resistive random access memory (RRAM) and manufacturing method thereof |
| 04/06/2011 | CN102005535A Method for preparing plane phase change memory |
| 04/06/2011 | CN102005466A Phase change memory structure with low-k medium heat insulating material and preparation method |
| 04/06/2011 | CN101593810B Nano structure quick-switch memristor and manufacturing method thereof |
| 04/06/2011 | CN101542730B Nonvolatile storage element, its manufacturing method, and nonvolatile semiconductor device using the nonvolatile storage element |
| 04/06/2011 | CN101504948B Hollow pen tip like structure, apparatus comprising the same, and manufacturing method therefor |
| 04/06/2011 | CN101114695B Memory element and semiconductor device |
| 03/31/2011 | US20110073833 Resistance memory element and method of manufacturing the same |
| 03/31/2011 | US20110073832 Phase-change memory device |
| 03/31/2011 | US20110073831 Ferroelectric polymer memory device including polymer electrodes and method of fabricating same |
| 03/31/2011 | US20110073830 Phase change random access memory device and method of manufacturing the same |
| 03/31/2011 | US20110073829 Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the same |
| 03/31/2011 | US20110073828 Memristor amorphous metal alloy electrodes |
| 03/31/2011 | US20110073825 Memory device and storage apparatus |
| 03/30/2011 | CN101999170A Sidewall structured switchable resistor cell |
| 03/30/2011 | CN101997083A Semiconductor memory device and method of menufacturing the same |
| 03/30/2011 | CN101997082A Self-convergence bottom electrode ring |
| 03/30/2011 | CN101997081A Resistive random access memory and preparation method thereof |
| 03/30/2011 | CN101996944A Manufacture method of nano metal plug electrode array |
| 03/30/2011 | CN101562228B Non-volatile resistance memory element and preparation method thereof |
| 03/29/2011 | US7916514 Shunted phase change memory |
| 03/24/2011 | US20110068319 Information recording and reproducing device |
| 03/24/2011 | US20110068318 Semiconductor memory device and method of manufacturing the same |
| 03/24/2011 | US20110068317 Phase change memory devices, methods of manufacturing and methods of operating the same |
| 03/24/2011 | US20110068316 Nonvolatile memory element and nonvolatile memory device |
| 03/24/2011 | US20110068315 Semiconductor memory device including resistance-change memory |
| 03/24/2011 | US20110068314 Semiconductor memory device |
| 03/24/2011 | US20110068313 Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same |
| 03/24/2011 | US20110068312 Nonvolatile memory device |
| 03/23/2011 | CN101989644A Method for improving data retention capacity of resistor random memory |
| 03/22/2011 | US7910914 Semiconductor memory and method for manufacturing the same |
| 03/22/2011 | US7910910 Phase-change memory cell and method of fabricating the phase-change memory cell |
| 03/22/2011 | US7910909 Non-volatile memory device and method of fabricating the same |
| 03/22/2011 | US7910908 Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the same |
| 03/22/2011 | US7910398 Phase-change memory device and method of manufacturing the same |
| 03/17/2011 | WO2011031534A1 Thermally shielded resistive memory element for low programming current |
| 03/17/2011 | WO2011030916A1 Phase change material and phase change memory element |
| 03/17/2011 | WO2011030559A1 Non-volatile memory device and method for producing same |
| 03/17/2011 | US20110062409 Phase change memory structure with multiple resistance states and methods of programming and sensing |
| 03/17/2011 | US20110062408 Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same |
| 03/17/2011 | US20110062406 Memory Devices and Formation Methods |
| 03/17/2011 | US20110062405 Information recording and reproducing device |
| 03/16/2011 | EP2296148A1 Information recording medium and method for producing the same |
| 03/15/2011 | US7906391 Reducing leakage currents in memories with phase-change material |
| 03/10/2011 | US20110059590 Method for forming a reduced active area in a phase change memory structure |
| 03/10/2011 | US20110057162 In via formed phase change memory cell with recessed pillar heater |
| 03/09/2011 | CN101984512A Composite phase change storage material and method for preparing composite phase change storage material film |
| 03/09/2011 | CN101504967B Heating center PCRAM structure and methods for making |
| 03/03/2011 | WO2011024455A1 Semiconductor memory device and production method therefor |
| 03/03/2011 | WO2011024271A1 Nonvolatile memory element and nonvolatile memory device |
| 03/03/2011 | US20110049465 Semiconductor integrated circuit device and method of fabricating the same |
| 03/03/2011 | US20110049464 Resistive random access memory device and memory array including the same |
| 03/03/2011 | US20110049463 Nonvolatile memory device and method of fabricating the same |
| 03/03/2011 | US20110049462 Flat lower bottom electrode for phase change memory cell |
| 03/03/2011 | US20110049461 Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell |
| 03/03/2011 | US20110049460 Single mask adder phase change memory element |
| 03/03/2011 | US20110049459 Non-volatile memory device including phase-change material |
| 03/03/2011 | US20110049458 Non-volatile memory device including phase-change material |
| 03/03/2011 | US20110049457 Non-volatile memory device including phase-change material |
| 03/03/2011 | US20110049456 Phase change structure with composite doping for phase change memory |
| 03/03/2011 | US20110049454 Semiconductor device |
| 03/03/2011 | DE102007036246B4 Verfahren zur Herstellung eines integrierten Schaltkreises mit einem resistiven Speicherelement, ein integrierter Schaltkreis, Verwendung in einem Verfahren zum Speichern von Informationen und ein Speichermodul A process for producing an integrated circuit with a resistive memory element, an integrated circuit, use in a method for storing information and a memory module |
| 03/02/2011 | CN101419940B Method for making memory cell assembly and the memory cell assembly |
| 03/01/2011 | US7897957 Non-volatile resistance switching memory |
| 03/01/2011 | US7897411 Non-volatile resistance switching memory |
| 02/24/2011 | US20110044089 Method for Manufacturing a Resistive Switching Memory Cell Comprising a Nickel Oxide Layer Operable at Low-Power and Memory Cells Obtained Thereof |
| 02/24/2011 | US20110042640 Method of fabricating phase change memory cell |
| 02/24/2011 | US20110042639 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| 02/23/2011 | EP2286454A2 Non-volatile resistive-switching memories |
| 02/23/2011 | CN101981721A Multiple bit phase change memory cell |
| 02/23/2011 | CN101981720A 垂直相变存储单元 A vertical phase change memory cell |
| 02/23/2011 | CN101981695A Resistance change element and production method of same |
| 02/22/2011 | US7893420 Phase change memory with various grain sizes |
| 02/22/2011 | US7893419 Processing phase change material to improve programming speed |
| 02/22/2011 | US7892936 Self aligned integration of high density phase change memory with thin film access device |
| 02/17/2011 | US20110038196 Electronic Devices Containing Switchably Conductive Silicon Oxides as a Switching Element and Methods for Production and Use Thereof |