| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 06/08/2011 | CN101106174B Method for reducing a reset current of phase change memory device |
| 06/07/2011 | US7955871 Method of using a switchable resistive perovskite microelectronic device with multi-layer thin film structure |
| 06/03/2011 | WO2011065537A1 Nonvolatile semiconductor storage device |
| 06/03/2011 | WO2011064967A1 Nonvolatile storage element, method for manufacturing same, and nonvolatile storage device |
| 06/03/2011 | WO2011064801A1 Memory including a low thermal budget selector switch on a variable resistance memory cell |
| 06/03/2011 | WO2011064057A1 Phase change memory element |
| 06/02/2011 | US20110128779 Memory including a selector switch on a variable resistance memory cell |
| 06/02/2011 | US20110127486 Phase-change memory device, phase-change channel transistor and memory cell array |
| 06/02/2011 | US20110127485 Keyhole-free sloped heater for phase change memory |
| 06/02/2011 | US20110127484 Resistance change memory and manufacturing method thereof |
| 06/02/2011 | US20110127483 Resistance change memory and manufacturing method thereof |
| 06/01/2011 | DE102010060893A1 Loch-freies abgeschrägtes Heizelement für einen Phasenänderungsspeicher Hole-free sloping heater for a phase change memory |
| 06/01/2011 | CN102084512A Switching element |
| 06/01/2011 | CN102084429A Method of driving non-volatile memory elements |
| 06/01/2011 | CN102082228A Nano compound phase-change material and application thereof to phase-change storage |
| 06/01/2011 | CN102082227A Methods for reducing recrystallization time for a phase change material |
| 06/01/2011 | CN101252170B Full epitaxial electric resistance changing multi-layer films based on silicon substrate, method and application thereof |
| 06/01/2011 | CN101034732B Resistance random memory device |
| 05/31/2011 | US7952087 Phase change device with offset contact |
| 05/31/2011 | US7952086 Phase-change nonvolatile memory device using Sb-Zn alloy |
| 05/31/2011 | US7951698 coating photoresists onto substrates, then removing the photoresist using electrode patterns simulated through computer programs corresponding to virtual connection lines for connecting nanostructure wires with electrodes, depositing a metal layer and removing the remaining photoresist from the substrate |
| 05/26/2011 | US20110122682 High Density Low Power Nanowire Phase Change Material Memory Device |
| 05/26/2011 | US20110121256 Programmable resistive memory cell with filament placement structure |
| 05/26/2011 | US20110121255 Integrated Memory Arrays, And Methods Of Forming Memory Arrays |
| 05/26/2011 | US20110121254 Memory device and cbram memory with improved reliability |
| 05/26/2011 | US20110121253 Memory device |
| 05/26/2011 | US20110121252 Single mask adder phase change memory element |
| 05/26/2011 | US20110121251 Single mask adder phase change memory element |
| 05/25/2011 | EP2325911A2 Phase change memory elements using self-aligned phase change material layers and methods of making and using the same |
| 05/25/2011 | EP2324503A2 Memory devices and methods of forming the same |
| 05/25/2011 | CN102077348A Nonvolatile memory element and semiconductor memory device provided with same |
| 05/25/2011 | CN102077347A Memory-cell array, nonvolatile storage device, memory-cell, and manufacturing method of memory-cell array |
| 05/25/2011 | CN102074650A Non-volatile memory device, method of manufacturing and method of operating the same |
| 05/25/2011 | CN101681913B Variable resistive element, method for manufacturing the variable resistive element and nonvolatile semiconductor storage device |
| 05/25/2011 | CN101636840B Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element |
| 05/25/2011 | CN101223642B Non-volatile memory |
| 05/19/2011 | WO2011058947A1 Variable resistance element, semiconductor device, and method for forming variable resistance element |
| 05/19/2011 | US20110116307 Phase change memory device suitable for high temperature operation |
| 05/19/2011 | US20110114913 Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
| 05/19/2011 | US20110114912 Nonvolatile semiconductor memory device and manufacturing method thereof |
| 05/19/2011 | US20110114911 Programmable Resistance Memory Element and Method for Making Same |
| 05/18/2011 | CN102067314A Resistance-change element and method of producing same |
| 05/18/2011 | CN102067234A Method for writing to resistance-change non-volatile memory elements, and resistance-change non-volatile memory device |
| 05/18/2011 | CN102064276A Asymmetric phase-change memory unit and element |
| 05/18/2011 | CN101207180B Multi-layer electrode structure |
| 05/18/2011 | CN101068038B Variable resistance memory device with buffer layer at lower electrode |
| 05/17/2011 | US7943919 Integrated circuit with upstanding stylus |
| 05/17/2011 | US7943918 Multi-layer phase-changeable memory devices |
| 05/12/2011 | WO2011056474A1 Non-volatile memory array architecture incorporating 1t-1r near 4f2 memory cell |
| 05/12/2011 | US20110110141 Resistive memory |
| 05/12/2011 | US20110108792 Single Crystal Phase Change Material |
| 05/12/2011 | US20110108791 Phase change material, a phase change random access memory device including the phase change material, and a semiconductor structure including the phase change material |
| 05/11/2011 | CN102054934A Preparation method of planar phase change storage |
| 05/11/2011 | CN102054853A 相变随机存取存储器及制造方法 Phase change random access memory and a method of manufacturing |
| 05/11/2011 | CN101649443B Amorphous lanthanum-lutetium oxide resisting film and preparation method and application thereof |
| 05/11/2011 | CN101226771B Multilevel-cell memory structures employing multi-memory layers and manufacturing method |
| 05/10/2011 | US7939816 Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same |
| 05/05/2011 | WO2011052354A1 Nonvolatile storage element and method for manufacturing same |
| 05/05/2011 | WO2011052292A1 Memory circuit, integrated circuit device and electronic device |
| 05/05/2011 | WO2011052279A1 Phase change device having phase change recording film, and phase change switching method for phase change recording film |
| 05/05/2011 | WO2011052239A1 Variable resistance non-volatile memory device, and method of forming memory cell |
| 05/05/2011 | US20110103133 Memory cell array, nonvolatile storage device, memory cell, and method of manufacturing memory cell array |
| 05/05/2011 | US20110103132 Nonvolatile memory element and semiconductor memory device including nonvolatile memory element |
| 05/05/2011 | US20110103131 Nonvolatile memory element and nonvolatile memory device |
| 05/05/2011 | US20110101297 Semiconductor device and method of manufacturing the same |
| 05/04/2011 | EP2063467B1 Nonvolatile storage element, its manufacturing method, and nonvolatile semiconductor device using the nonvolatile storage element |
| 05/04/2011 | CN102047423A Nonvolatile storage element and nonvolatile storage device |
| 05/04/2011 | CN102047422A Method of driving resistance-change element, and non-volatile memory device |
| 05/04/2011 | CN102044631A Memory and method of fabricating the same |
| 05/04/2011 | CN102044630A CuSiO resistive memory prepared based on sputtering copper and producing method thereof |
| 05/04/2011 | CN102044293A Cross point memory array device |
| 05/04/2011 | CN101546706B Process for forming phase-change films |
| 05/04/2011 | CN101359717B Resistor random access memory structure having a defined small area of electrical contact and its manufacture method |
| 05/04/2011 | CN101299454B Method for preparing nano composite phase-changing material |
| 05/03/2011 | US7935953 Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same |
| 05/03/2011 | US7935950 Controllable ovonic phase-change semiconductor memory device and methods of programming the same |
| 04/28/2011 | WO2011049830A1 A memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same |
| 04/28/2011 | WO2011049829A1 A memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same |
| 04/28/2011 | US20110097825 Methods For Reducing Recrystallization Time for a Phase Change Material |
| 04/28/2011 | US20110096595 Semiconductor memory device and operation method thereof |
| 04/28/2011 | US20110096589 Nanowire-based memristor devices |
| 04/28/2011 | US20110095259 Resistance changing device and method for fabricating the same |
| 04/28/2011 | US20110095258 Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same |
| 04/28/2011 | US20110095257 Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same |
| 04/28/2011 | US20110095255 Memory device and fabrication process thereof |
| 04/27/2011 | EP2313928A2 Geometric diode, applications and method |
| 04/27/2011 | CN102034929A Preparation method of plane phase-change memory |
| 04/27/2011 | CN102034928A Phase-change memory device |
| 04/27/2011 | CN102034927A Impedance memorizer and manufacture method thereof |
| 04/26/2011 | US7932509 Phase change memory element |
| 04/26/2011 | US7932505 Perovskite transition metal oxide nonvolatile memory element |
| 04/21/2011 | WO2011045886A1 Resistance-change-type non-volatile storage device |
| 04/21/2011 | US20110089395 Structure and manufacturing method of semiconductor memory device |
| 04/21/2011 | US20110089394 Semiconductor device |
| 04/21/2011 | US20110089393 Memory and Method of Fabricating the Same |
| 04/21/2011 | US20110089392 Memory using tunneling field effect transistors |
| 04/21/2011 | US20110089391 Punch-through diode steering element |
| 04/21/2011 | DE102007014979B4 Integrierter Schaltkreis mit Kohlenstoff-Speicherschicht, Verfahren zur Herstellung, Speichermodul und Computersystem An integrated circuit with carbon-memory layer, method for manufacture, storage modulus and computer system |
| 04/20/2011 | EP1751767B1 Thin film memory device having a variable resistance |
| 04/20/2011 | CN102027598A Carbon nano-film reversible resistance-switchable elements and methods of forming the same |