Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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07/14/2011 | WO2011084482A1 Methods of self-aligned growth of chalcogenide memory access device |
07/14/2011 | WO2011084334A2 Carbon/tunneling-barrier/carbon diode |
07/14/2011 | WO2011083632A1 Memory cell and method for manufacturing memory cell |
07/14/2011 | WO2011083327A1 Electrically actuated switch |
07/14/2011 | US20110171811 Method for fabricating a resistor for a resistance random access memory |
07/14/2011 | US20110171809 Method for fabricating high density pillar structures by double patterning using positive photoresist |
07/14/2011 | US20110170333 Data read/write device |
07/14/2011 | US20110170331 Semiconductor devices and methods of driving the same |
07/14/2011 | US20110168966 Deposition of amorphous phase change material |
07/14/2011 | US20110168965 Reducing Drift in Chalcogenide Devices |
07/14/2011 | US20110168964 Processing Phase Change Material to Improve Programming Speed |
07/14/2011 | DE102010061572A1 Phasenänderungsstruktur, Verfahren zum Bilden einer Phasenänderungsschicht, Phasenänderungs-Speichervorrichtung und Verfahren zum Herstellen einer Phasenänderungs-Speichervorrichtung Phase change structure, method of forming a phase change layer, phase-change memory device and method for fabricating a phase change memory device |
07/13/2011 | EP2342768A1 Miim diodes having stacked structure |
07/13/2011 | EP2342752A1 Damascene process for carbon memory element with miim diode |
07/13/2011 | CN102124564A Nonvolatile semiconductor storage device and manufacturing method therefor |
07/13/2011 | CN102122700A Double-track phase change memory and preparation method thereof |
07/13/2011 | CN102122636A Preparation method of three-dimensional resistance conversion memory chip |
07/13/2011 | CN102122635A Method for forming trench array |
07/07/2011 | WO2011080866A1 Memory device and manufacturing method therefor |
07/07/2011 | US20110164447 Current steering element, storage element, storage device, and method for manufacturing current steering element |
07/07/2011 | US20110163288 Manufacturing Method for Pipe-Shaped Electrode Phase Change Memory |
07/06/2011 | EP1619037B1 Phase-change recording material and information recording medium |
07/06/2011 | CN1812096B Cross-point nonvolatile memory devices and methods of fabricating the same |
07/06/2011 | CN102119424A Resistance-change non-volatile memory device |
07/06/2011 | CN102117885A Nanometer composite multilayer phase change thin-film material for phase change memory |
07/06/2011 | CN102117884A Self-selecting PCM device not requiring a dedicated selector transistor |
07/06/2011 | CN102117883A Method for reducing power consumption of unit operation of phase change memory |
07/06/2011 | CN102117882A Method for reducing operation power consumption of phase change memory unit |
07/06/2011 | CN102117823A Resistance conversion storage nano-structure and self-aligning manufacturing method thereof |
07/06/2011 | CN101572248B Resistance memory and method for fabricating integrated circuit with same |
07/05/2011 | US7973384 Phase change memory cell including multiple phase change material portions |
06/30/2011 | US20110161605 Memory devices and methods of operating the same |
06/30/2011 | US20110159661 Nonvolatile Memory Element and Production Method Thereof and Storage Memory Arrangement |
06/30/2011 | US20110157959 Semiconductor storage device, memory cell array, and a fabrication method and drive method of a semiconductor storage device |
06/30/2011 | US20110155994 Structures for resistance random access memory and methods of forming the same |
06/30/2011 | US20110155993 Phase change memory devices and fabrication methods thereof |
06/30/2011 | US20110155992 Phase-separation type phase-change memory |
06/30/2011 | US20110155990 Continuous plane of thin-film materials for a two-terminal cross-point memory |
06/30/2011 | US20110155989 Variable resistance memory device and methods of forming the same |
06/30/2011 | US20110155988 Memory element and memory device |
06/30/2011 | US20110155987 Memory element and memory device |
06/30/2011 | US20110155986 Dual resistance heater for phase change devices and manufacturing method thereof |
06/30/2011 | US20110155985 Phase change structure, and phase change memory device |
06/29/2011 | CN102110774A Method for preparing non-volatile memory array |
06/29/2011 | CN102110773A Silicon antimony tellurium composite phase-change material |
06/29/2011 | CN101626060B Phase-change memory element and its manufacture method |
06/29/2011 | CN101533891B Preparation method of nonvolatile resistance variation memory structure |
06/29/2011 | CN101335328B Phase-change memory device unit construction and manufacturing method thereof |
06/29/2011 | CN101271960B Phase change layers and methods of forming the same, phase change memory devices and methods of manufacturing the same |
06/29/2011 | CN101165911B Phase change memory devices and methods of manufacturing the same |
06/28/2011 | US7968861 Phase change memory element |
06/23/2011 | WO2011074545A1 Semiconductor storage device and method for manufacturing same |
06/23/2011 | WO2011074243A1 Resistance-varying element and process for production thereof |
06/23/2011 | US20110149639 Non-Volatile Memory Cell with Multiple Resistive Sense Elements Sharing a Common Switching Device |
06/23/2011 | US20110149637 Method and apparatus providing high density chalcogenide-based data storage |
06/23/2011 | US20110149636 Ion barrier cap |
06/23/2011 | US20110149634 Non-volatile memory device ion barrier |
06/23/2011 | US20110147696 Resistive random access memory devices and resistive random access memory arrays having the same |
06/23/2011 | US20110147695 Fabricating current-confining structures in phase change memory switch cells |
06/23/2011 | US20110147693 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
06/23/2011 | US20110147692 Variable resistance memory device and method of forming the same |
06/23/2011 | US20110147691 Semiconductor memory device using variable resistance element or phase-change element as memory device |
06/23/2011 | US20110147690 Phase change memory device having 3 dimensional stack structure and fabrication method thereof |
06/23/2011 | US20110147689 Phase change memory device capable of reducing disturbance and fabrication method thereof |
06/22/2011 | EP2335297A1 Phase change memory materials |
06/22/2011 | CN102104111A Method of forming variable resistance memory device |
06/22/2011 | CN102104110A Resistance change memory with optimized resistance change characteristic and preparation method thereof |
06/22/2011 | CN102104055A Variable resistance memory device |
06/22/2011 | CN101656261B Integrated circuits and methods for manufacturing |
06/22/2011 | CN101652874B An electronic device, and a method of operating an electronic device |
06/22/2011 | CN101636841B Storage element and storage device |
06/22/2011 | CN101325245B Electronics module, method for the manufacture thereof and applications |
06/21/2011 | US7964863 Memory cell having a side electrode contact |
06/21/2011 | US7964861 Method and apparatus for reducing programmed volume of phase change memory |
06/21/2011 | US7964436 Co-sputter deposition of metal-doped chalcogenides |
06/16/2011 | WO2011071009A1 Variable-resistance element using an electrochemical reaction, and manufacturing method therefor |
06/16/2011 | WO2011069697A1 RESISTIVE SWITCHING IN NITROGEN-DOPED MgO |
06/16/2011 | US20110141798 Amorphous Semiconductor Threshold Switch Volatile Memory Cell |
06/16/2011 | US20110140762 Resistive Switching in Nitrogen-doped MgO |
06/16/2011 | US20110140069 Nonvolatile semiconductor memory device and method for producing the same |
06/16/2011 | US20110140067 Resistance switching memory |
06/16/2011 | US20110140066 Phase Change Memory with Various Grain Sizes |
06/16/2011 | US20110140065 Memory element and memory device |
06/15/2011 | CN102097587A Memory device having wide area phase change element and small electrode contact area |
06/15/2011 | CN102097586A Flexible nanodot resistive random access memory (RRAM) based on all low-temperature process and manufacturing method thereof |
06/15/2011 | CN102097585A Preparation method of quasi-edge contact nano phase-change memory cell |
06/15/2011 | CN102097374A Phase change random access memory and manufacturing method thereof |
06/15/2011 | CN101026178B Heat efficiency reduced minimum phase change memory and its making method |
06/09/2011 | US20110133152 Resistive memory device and method for fabricating the same |
06/09/2011 | US20110133151 Memory cell that includes a carbon-based memory element and methods of forming the same |
06/09/2011 | US20110133150 Phase Change Memory Cell with Filled Sidewall Memory Element and Method for Fabricating the Same |
06/09/2011 | US20110133149 Resistance change memory and manufacturing method thereof |
06/09/2011 | US20110133148 Resistive memory device and method of fabricating the same |
06/08/2011 | EP1501124B1 Solid electrolyte switching devices, fpga and memory devices using the same, and method of manufacturing the same |
06/08/2011 | CN1756667B Phase variation recording material and information recording medium |
06/08/2011 | CN102088059A Method for manufacturing a small pin on integrated circuits or other devices |
06/08/2011 | CN101681912B Resistive nonvolatile memory element and method of manufacture and drive method thereof |
06/08/2011 | CN101369597B Multi-level memory cell having phase change element and asymmetrical thermal boundary |
06/08/2011 | CN101308903B Phase-change memory element |
06/08/2011 | CN101110467B Phase change memory cell having step-like programming characteristic |