Patents
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
07/2011
07/14/2011WO2011084482A1 Methods of self-aligned growth of chalcogenide memory access device
07/14/2011WO2011084334A2 Carbon/tunneling-barrier/carbon diode
07/14/2011WO2011083632A1 Memory cell and method for manufacturing memory cell
07/14/2011WO2011083327A1 Electrically actuated switch
07/14/2011US20110171811 Method for fabricating a resistor for a resistance random access memory
07/14/2011US20110171809 Method for fabricating high density pillar structures by double patterning using positive photoresist
07/14/2011US20110170333 Data read/write device
07/14/2011US20110170331 Semiconductor devices and methods of driving the same
07/14/2011US20110168966 Deposition of amorphous phase change material
07/14/2011US20110168965 Reducing Drift in Chalcogenide Devices
07/14/2011US20110168964 Processing Phase Change Material to Improve Programming Speed
07/14/2011DE102010061572A1 Phasenänderungsstruktur, Verfahren zum Bilden einer Phasenänderungsschicht, Phasenänderungs-Speichervorrichtung und Verfahren zum Herstellen einer Phasenänderungs-Speichervorrichtung Phase change structure, method of forming a phase change layer, phase-change memory device and method for fabricating a phase change memory device
07/13/2011EP2342768A1 Miim diodes having stacked structure
07/13/2011EP2342752A1 Damascene process for carbon memory element with miim diode
07/13/2011CN102124564A Nonvolatile semiconductor storage device and manufacturing method therefor
07/13/2011CN102122700A Double-track phase change memory and preparation method thereof
07/13/2011CN102122636A Preparation method of three-dimensional resistance conversion memory chip
07/13/2011CN102122635A Method for forming trench array
07/07/2011WO2011080866A1 Memory device and manufacturing method therefor
07/07/2011US20110164447 Current steering element, storage element, storage device, and method for manufacturing current steering element
07/07/2011US20110163288 Manufacturing Method for Pipe-Shaped Electrode Phase Change Memory
07/06/2011EP1619037B1 Phase-change recording material and information recording medium
07/06/2011CN1812096B Cross-point nonvolatile memory devices and methods of fabricating the same
07/06/2011CN102119424A Resistance-change non-volatile memory device
07/06/2011CN102117885A Nanometer composite multilayer phase change thin-film material for phase change memory
07/06/2011CN102117884A Self-selecting PCM device not requiring a dedicated selector transistor
07/06/2011CN102117883A Method for reducing power consumption of unit operation of phase change memory
07/06/2011CN102117882A Method for reducing operation power consumption of phase change memory unit
07/06/2011CN102117823A Resistance conversion storage nano-structure and self-aligning manufacturing method thereof
07/06/2011CN101572248B Resistance memory and method for fabricating integrated circuit with same
07/05/2011US7973384 Phase change memory cell including multiple phase change material portions
06/2011
06/30/2011US20110161605 Memory devices and methods of operating the same
06/30/2011US20110159661 Nonvolatile Memory Element and Production Method Thereof and Storage Memory Arrangement
06/30/2011US20110157959 Semiconductor storage device, memory cell array, and a fabrication method and drive method of a semiconductor storage device
06/30/2011US20110155994 Structures for resistance random access memory and methods of forming the same
06/30/2011US20110155993 Phase change memory devices and fabrication methods thereof
06/30/2011US20110155992 Phase-separation type phase-change memory
06/30/2011US20110155990 Continuous plane of thin-film materials for a two-terminal cross-point memory
06/30/2011US20110155989 Variable resistance memory device and methods of forming the same
06/30/2011US20110155988 Memory element and memory device
06/30/2011US20110155987 Memory element and memory device
06/30/2011US20110155986 Dual resistance heater for phase change devices and manufacturing method thereof
06/30/2011US20110155985 Phase change structure, and phase change memory device
06/29/2011CN102110774A Method for preparing non-volatile memory array
06/29/2011CN102110773A Silicon antimony tellurium composite phase-change material
06/29/2011CN101626060B Phase-change memory element and its manufacture method
06/29/2011CN101533891B Preparation method of nonvolatile resistance variation memory structure
06/29/2011CN101335328B Phase-change memory device unit construction and manufacturing method thereof
06/29/2011CN101271960B Phase change layers and methods of forming the same, phase change memory devices and methods of manufacturing the same
06/29/2011CN101165911B Phase change memory devices and methods of manufacturing the same
06/28/2011US7968861 Phase change memory element
06/23/2011WO2011074545A1 Semiconductor storage device and method for manufacturing same
06/23/2011WO2011074243A1 Resistance-varying element and process for production thereof
06/23/2011US20110149639 Non-Volatile Memory Cell with Multiple Resistive Sense Elements Sharing a Common Switching Device
06/23/2011US20110149637 Method and apparatus providing high density chalcogenide-based data storage
06/23/2011US20110149636 Ion barrier cap
06/23/2011US20110149634 Non-volatile memory device ion barrier
06/23/2011US20110147696 Resistive random access memory devices and resistive random access memory arrays having the same
06/23/2011US20110147695 Fabricating current-confining structures in phase change memory switch cells
06/23/2011US20110147693 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
06/23/2011US20110147692 Variable resistance memory device and method of forming the same
06/23/2011US20110147691 Semiconductor memory device using variable resistance element or phase-change element as memory device
06/23/2011US20110147690 Phase change memory device having 3 dimensional stack structure and fabrication method thereof
06/23/2011US20110147689 Phase change memory device capable of reducing disturbance and fabrication method thereof
06/22/2011EP2335297A1 Phase change memory materials
06/22/2011CN102104111A Method of forming variable resistance memory device
06/22/2011CN102104110A Resistance change memory with optimized resistance change characteristic and preparation method thereof
06/22/2011CN102104055A Variable resistance memory device
06/22/2011CN101656261B Integrated circuits and methods for manufacturing
06/22/2011CN101652874B An electronic device, and a method of operating an electronic device
06/22/2011CN101636841B Storage element and storage device
06/22/2011CN101325245B Electronics module, method for the manufacture thereof and applications
06/21/2011US7964863 Memory cell having a side electrode contact
06/21/2011US7964861 Method and apparatus for reducing programmed volume of phase change memory
06/21/2011US7964436 Co-sputter deposition of metal-doped chalcogenides
06/16/2011WO2011071009A1 Variable-resistance element using an electrochemical reaction, and manufacturing method therefor
06/16/2011WO2011069697A1 RESISTIVE SWITCHING IN NITROGEN-DOPED MgO
06/16/2011US20110141798 Amorphous Semiconductor Threshold Switch Volatile Memory Cell
06/16/2011US20110140762 Resistive Switching in Nitrogen-doped MgO
06/16/2011US20110140069 Nonvolatile semiconductor memory device and method for producing the same
06/16/2011US20110140067 Resistance switching memory
06/16/2011US20110140066 Phase Change Memory with Various Grain Sizes
06/16/2011US20110140065 Memory element and memory device
06/15/2011CN102097587A Memory device having wide area phase change element and small electrode contact area
06/15/2011CN102097586A Flexible nanodot resistive random access memory (RRAM) based on all low-temperature process and manufacturing method thereof
06/15/2011CN102097585A Preparation method of quasi-edge contact nano phase-change memory cell
06/15/2011CN102097374A Phase change random access memory and manufacturing method thereof
06/15/2011CN101026178B Heat efficiency reduced minimum phase change memory and its making method
06/09/2011US20110133152 Resistive memory device and method for fabricating the same
06/09/2011US20110133151 Memory cell that includes a carbon-based memory element and methods of forming the same
06/09/2011US20110133150 Phase Change Memory Cell with Filled Sidewall Memory Element and Method for Fabricating the Same
06/09/2011US20110133149 Resistance change memory and manufacturing method thereof
06/09/2011US20110133148 Resistive memory device and method of fabricating the same
06/08/2011EP1501124B1 Solid electrolyte switching devices, fpga and memory devices using the same, and method of manufacturing the same
06/08/2011CN1756667B Phase variation recording material and information recording medium
06/08/2011CN102088059A Method for manufacturing a small pin on integrated circuits or other devices
06/08/2011CN101681912B Resistive nonvolatile memory element and method of manufacture and drive method thereof
06/08/2011CN101369597B Multi-level memory cell having phase change element and asymmetrical thermal boundary
06/08/2011CN101308903B Phase-change memory element
06/08/2011CN101110467B Phase change memory cell having step-like programming characteristic
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