| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 08/25/2011 | US20110204311 Non-volatile resistive-switching memories formed using anodization |
| 08/25/2011 | US20110204310 Electronic device incorporating memristor made from metallic nanowire |
| 08/25/2011 | US20110204309 Semiconductor memory device and method of manufacturing the same |
| 08/24/2011 | EP2162931B1 An electronic device, and a method of manufacturing an electronic device |
| 08/23/2011 | US8003970 Phase-change random access memory and method of manufacturing the same |
| 08/18/2011 | WO2011100079A1 Post deposition method for regrowth of crystalline phase change material |
| 08/18/2011 | WO2010137339A9 Memory-cell array, nonvolatile storage device, memory-cell, and manufacturing method of memory-cell array |
| 08/18/2011 | US20110198555 Chalcogenide film and manufacturing method thereof |
| 08/18/2011 | US20110198554 Non-volatile memory device |
| 08/17/2011 | CN102157688A Resistive random-access memory (RRAM) and manufacturing method thereof |
| 08/17/2011 | CN102157687A Programmable nonvolatile resistance type memory based on graphene and preparation method thereof |
| 08/17/2011 | CN102157686A Memorizer with surface impedance state varying with electric domain and manufacturing method thereof |
| 08/17/2011 | CN102157685A Phase-change storage material and manufacture method thereof |
| 08/17/2011 | CN102157684A Resistive random access memory (RRAM) using carbon nano tube (CNT) as solid state electrolyte |
| 08/17/2011 | CN102157683A Keyhole-free sloped heater for phase change memory |
| 08/17/2011 | CN102157682A One-phase ferroelectric film and preparing method thereof as well as effective resistance regulation mode |
| 08/17/2011 | CN102157681A Sb2Te3-HfO2 nano compound phase change material and application of Sb2Te3-HfO2 nano compound phase change material in phase change memory |
| 08/17/2011 | CN101416326B Phase change memory elements using self-aligned phase change material layers and methods of making and using same |
| 08/17/2011 | CN101005112B Non-volatile memory element and method of manufacturing the same |
| 08/11/2011 | WO2011097389A1 Non-volatile memory cell containing nanodots and method of making thereof |
| 08/11/2011 | WO2011097077A1 A memory cell that includes a sidewall collar for pillar isolation and methods of forming the same |
| 08/11/2011 | WO2011096194A1 Method of driving resistance changing element, method of initialization of same, and nonvolatile memory device |
| 08/11/2011 | US20110194339 Microelectronic programmable device and methods of forming and programming the same |
| 08/11/2011 | US20110194329 Memory component, memory device, and method of operating memory device |
| 08/11/2011 | US20110193051 Resistance memory devices and methods of forming the same |
| 08/11/2011 | US20110193050 Semiconductor memory device and method of manufacturing the same |
| 08/11/2011 | US20110193049 Memory device and method for manufacturing same |
| 08/11/2011 | US20110193048 Non-volatile memory device having bottom electrode |
| 08/11/2011 | US20110193047 Phase change memory |
| 08/11/2011 | US20110193046 Phase change memory device, manufacturing method thereof and operating method thereof |
| 08/11/2011 | US20110193045 Post deposition method for regrowth of crystalline phase change material |
| 08/11/2011 | US20110193044 Resistive memory and methods of processing resistive memory |
| 08/11/2011 | US20110193043 Ultra-Low Energy RRAM with Good Endurance and Retention |
| 08/11/2011 | US20110193042 Memory cell formed using a recess and methods for forming the same |
| 08/10/2011 | CN1574363B Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same |
| 08/10/2011 | CN102148329A Resistance conversion memory structure and manufacturing method thereof |
| 08/10/2011 | CN102148328A Oxide resistor storage device and preparation method thereof |
| 08/09/2011 | US7994492 Phase change material, phase change memory device including the same, and methods of manufacturing and operating the phase change memory device |
| 08/09/2011 | US7994491 PCRAM device with switching glass layer |
| 08/09/2011 | US7993957 Phase change memory cell and manufacturing method thereof using minitrenches |
| 08/04/2011 | WO2011091709A1 Ferro-resistive random access memory (ferro-rram), operation method and manufacturing mehtod thereof |
| 08/04/2011 | US20110189832 Phase Change Material Memory Device |
| 08/04/2011 | US20110188285 Permanent solid state memory |
| 08/04/2011 | US20110186803 Multi-resistive state memory device with conductive oxide electrodes |
| 08/04/2011 | US20110186802 Memory device and a semiconductor device |
| 08/04/2011 | US20110186801 Nanoscale Switching Device |
| 08/04/2011 | US20110186800 Pore phase change material cell fabricated from recessed pillar |
| 08/04/2011 | US20110186798 Phase Changeable Memory Devices and Methods of Forming the Same |
| 08/03/2011 | CN102144309A Carbon-based resistivity-switching materials and methods of forming the same |
| 08/03/2011 | CN102142519A Embedded nanocrystalline resistance-change material memory and preparation method thereof |
| 08/03/2011 | CN102142518A Phase-change storage material and preparation method thereof |
| 08/03/2011 | CN102142517A Multiple-layer phase-change material with low thermal conductivity |
| 08/03/2011 | CN102142516A Resistance random access memory with self-selection crosstalk-resistant function and cross array memory circuit |
| 08/03/2011 | CN102142442A Semiconductor device and forming method thereof |
| 08/03/2011 | CN101622728B Method for controlled formation of the resistive switching material in a resistive switching device and devices obtained thereof |
| 08/03/2011 | CN101621115B Binary oxide resistance random access memory (RRAM) storage unit of electric pulse induced resistance conversion characteristics |
| 08/02/2011 | US7989789 Phase-change memory device that stores information in a non-volatile manner by changing states of a memory material |
| 07/28/2011 | WO2011090152A1 Semiconductor device and method of manufacturing same |
| 07/28/2011 | WO2011089682A1 Method for manufacturing non-volatile semiconductor storage element and method for manufacturing non-volatile semiconductor storage device |
| 07/28/2011 | US20110182108 Memristive Device and Methods of Making and Using the Same |
| 07/28/2011 | US20110182107 Memristive device |
| 07/28/2011 | US20110182103 Gcib-treated resistive device |
| 07/28/2011 | US20110181352 Electrically Actuated Devices |
| 07/28/2011 | US20110181345 Phase transition devices and smart capacitive devices |
| 07/28/2011 | US20110180775 Programmable metallization cell with ion buffer layer |
| 07/28/2011 | US20110180774 Phase Change Memory Device |
| 07/27/2011 | EP2348555A1 Metal oxide thin film and method for manufacturing the same |
| 07/27/2011 | CN1953230B Nonvolatile memory device comprising nanodot and manufacturing method for the same |
| 07/27/2011 | CN102138233A Phase change memory materials |
| 07/27/2011 | CN102136548A Dry etching method for phase-change materials |
| 07/27/2011 | CN102136547A Programmable metallization cell with iron buffer layers |
| 07/27/2011 | CN102136487A Resistance-type RAM (Random Access Memory) memory unit based on zinc oxide material and preparation method thereof |
| 07/27/2011 | CN102134698A Al-Sb-Te series phase change material for phase change memory and preparation method thereof |
| 07/27/2011 | CN101604729B Phase change memory cell having top and bottom sidewall contacts, and methods for manufacturing the same |
| 07/27/2011 | CN101075629B Nonvolatile memory device using oxygen-deficient metal oxide layer and method of manufacturing the same |
| 07/27/2011 | CN101064361B Memory element and semiconductor device |
| 07/21/2011 | WO2011086725A1 Nonvolatile storage device and manufacturing method therefor |
| 07/21/2011 | US20110176353 Memristive Device Having a Porous Dopant Diffusion Element |
| 07/21/2011 | US20110176352 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material |
| 07/21/2011 | US20110175053 Nonvolatile memory device and method for manufacturing the same |
| 07/21/2011 | US20110175052 Resistance-variable memory device including carbide-based solid electrolyte membrane and manufacturing method thereof |
| 07/21/2011 | US20110175050 Metal Oxide Resistance Based Semiconductor Memory Device With High Work Function Electrode |
| 07/21/2011 | US20110175049 Memory component and memory device |
| 07/21/2011 | US20110175048 Nonvolatile memory device and method for manufacturing same |
| 07/21/2011 | US20110175047 Electric field induced phase transitions and dynamic tuning of the properties of oxide structures |
| 07/20/2011 | EP2005495B1 Phase change memory elements using self- aligned phase change material layers |
| 07/20/2011 | CN1825649B Heating electrode material for phase transformation memory and preparing method |
| 07/20/2011 | CN102132408A Storage element and storage device |
| 07/20/2011 | CN102132407A Storage element and storage device |
| 07/20/2011 | CN102130298A Si-Sb-Te phase change material for phase change storage |
| 07/20/2011 | CN102130297A Resistive random access memory based on P/N type oxide laminated structure and preparation method thereof |
| 07/20/2011 | CN102130296A Resistive random access memory based on doped vanadium oxide film and preparation method thereof |
| 07/20/2011 | CN102130295A Resistive random access memory based on vanadium oxide film and preparation method thereof |
| 07/20/2011 | CN102130294A Metal oxide resistance based semiconductor memory device with high work function electrode |
| 07/20/2011 | CN102130145A Phase change storage and manufacturing method thereof |
| 07/20/2011 | CN102127372A Nano polishing solution for chemically mechanical polishing of vanadium oxide and application thereof |
| 07/20/2011 | CN101685827B Memory device and its manufacturing method |
| 07/20/2011 | CN101675524B Inverted variable resistance memory cell and method of making the same |
| 07/20/2011 | CN101660118B Nanometer composite phase-change material, preparation and application thereof |
| 07/20/2011 | CN101220463B Process for chemical vapor deposition and semiconductor structure |