| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 10/04/2011 | US8030637 Memory element using reversible switching between SP2 and SP3 hybridized carbon |
| 09/29/2011 | WO2011119175A1 Germanium antimony telluride materials and devices incorporating same |
| 09/29/2011 | WO2011118513A1 Resistance change device and memory cell array |
| 09/29/2011 | WO2011118185A1 Method for driving non-volatile memory element, and non-volatile memory device |
| 09/29/2011 | US20110237045 Phase change memory cell and manufacturing method thereof using minitrenches |
| 09/29/2011 | US20110233509 Nonvolatile memory device |
| 09/29/2011 | US20110233508 Nonvolatile memory device and method for manufacturing the same |
| 09/29/2011 | US20110233507 Resistance change memory and method of manufacturing the same |
| 09/29/2011 | US20110233506 Nonvolatile memory device and method for manufacturing same |
| 09/29/2011 | US20110233505 Nonvolatile memory device and manufacturing method thereof |
| 09/29/2011 | US20110233504 Non-volatile memory with resistive access component |
| 09/29/2011 | US20110233503 Methods of forming phase-change memory devices and devices so formed |
| 09/29/2011 | US20110233502 Nonvolatile memory device |
| 09/29/2011 | US20110233501 Resistance change memory |
| 09/29/2011 | US20110233500 Semiconductor memory device including memory cell having rectifying element and switching element |
| 09/28/2011 | EP2368268A1 Memristive device and methods of making and using the same |
| 09/28/2011 | CN1866567B Semiconductor device and manufacturing method thereof and method for writing memory element |
| 09/28/2011 | CN101010793B Method for manufacturing an electric device with a layer of conductive material contacted by nanowire |
| 09/27/2011 | US8026503 Phase-change memory and method of making same |
| 09/27/2011 | US8026502 Phase-change nonvolatile memory and manufacturing method therefor |
| 09/22/2011 | WO2011115926A1 Bottom electrodes for use with metal oxide resistivity switching layers |
| 09/22/2011 | WO2011115924A1 Bottom electrodes for use with metal oxide resistivity switching layers |
| 09/22/2011 | WO2011115188A1 Variable resistance element, semiconductor device including same, and method for manufacturing the element and the device |
| 09/22/2011 | WO2011114725A1 Nonvolatile memory element, production method therefor, design support method therefor, and nonvolatile memory device |
| 09/22/2011 | WO2011114666A1 Current control element, memory element, memory device, and production method for current control element |
| 09/22/2011 | WO2011114173A1 Chalcogenide phase change materials and their use |
| 09/22/2011 | US20110228593 Memristive Device Based on Current Modulation by Trapped Charges |
| 09/22/2011 | US20110228592 Programmable Bipolar Electronic Device |
| 09/22/2011 | US20110227032 Memristor with Nanostructure Electrodes |
| 09/22/2011 | US20110227031 Memristor Devices Configured to Control Bubble Formation |
| 09/22/2011 | US20110227030 Memristor Having a Triangular Shaped Electrode |
| 09/22/2011 | US20110227029 Memory elements using self-aligned phase change material layers and methods of manufacturing same |
| 09/22/2011 | US20110227028 Bottom electrodes for use with metal oxide resistivity switching layers |
| 09/22/2011 | US20110227027 Memory Device and Method of Making Same |
| 09/22/2011 | US20110227025 Semiconductor memory device and method of manufacturing same |
| 09/22/2011 | US20110227024 Resistance-switching memory cell with heavily doped metal oxide layer |
| 09/22/2011 | US20110227023 Backend of line (beol) compatible high current density access device for high density arrays of electronic components |
| 09/22/2011 | US20110227022 Memristor Having a Nanostructure Forming An Active Region |
| 09/22/2011 | US20110227021 Post deposition method for regrowth of crystalline phase change material |
| 09/22/2011 | US20110227020 Bottom electrodes for use with metal oxide resistivity switching layers |
| 09/22/2011 | US20110227018 Magnetoresistance element, method of manufacturing the same, and storage medium used in the manufacturing method |
| 09/22/2011 | US20110227017 Semiconductor memory device including variable resistance element or phase-change element |
| 09/21/2011 | EP1882271B1 Non-volatile memory |
| 09/21/2011 | CN1938781B Thin film memory device having a variable resistance |
| 09/21/2011 | CN102197434A Resistance-change-type non-volatile storage device |
| 09/21/2011 | CN102194995A Zinc-oxide-based polarity-controlled resistive random-access memory (RRAM) and manufacturing method thereof |
| 09/21/2011 | CN102194994A Bipolar memory cells, memory devices including the same and methods of manufacturing and operating the same |
| 09/21/2011 | CN102194993A Method for manufacturing memory cell of phase-change memory |
| 09/21/2011 | CN102194512A Memory component, memory device, and method of operating memory device |
| 09/20/2011 | US8022385 Memory devices with buried lines |
| 09/15/2011 | WO2011111361A1 Nonvolatile memory element and method for manufacturing same |
| 09/15/2011 | WO2011110618A1 Method for producing a non-volatile electronic data memory on the basis of a crystalline oxide having a perovskite structure |
| 09/15/2011 | US20110220863 Nonvolatile memory device and method of manufacturing the same |
| 09/15/2011 | US20110220862 Resistance variable element and resistance variable memory device |
| 09/15/2011 | US20110220860 Bipolar memory cells, memory devices including the same and methods of manufacturing and operating the same |
| 09/15/2011 | US20110220859 Two-Terminal Nanotube Devices And Systems And Methods Of Making Same |
| 09/15/2011 | US20110220858 Semiconductor device and method of manufacturing the same |
| 09/15/2011 | DE102010011646A1 Verfahren zur Herstellung eines nichtflüchtigen elektronischen Datenspeichers auf Grundlage eines kristallinen Oxids mit Perowskitstruktur A method for producing a non-volatile electronic data store based on a crystalline oxide having a perovskite structure |
| 09/14/2011 | EP2365554A2 Bipolar memory cells, memory devices including the same and methods of manufacturing and operating the same |
| 09/14/2011 | CN102185108A Semiconductor memory structure and control method thereof |
| 09/14/2011 | CN102185107A Resistance-type random storage component and preparation method thereof |
| 09/14/2011 | CN102185106A Phase change memory material and preparation method thereof |
| 09/14/2011 | CN102185105A Semiconductor memory structure and manufacturing method thereof |
| 09/14/2011 | CN102185104A Multilayer stacked resistance transit storage structure |
| 09/14/2011 | CN102185103A Memory unit of resistance type random access memory and manufacturing method thereof |
| 09/14/2011 | CN102185102A Resistance memory device with luminescence characteristics, and operating method and application thereof |
| 09/14/2011 | CN102185101A Memory component and memory device |
| 09/14/2011 | CN102184744A Memory device equipped with field enhanced arrangement and manufacture method thereof |
| 09/14/2011 | CN101714610B Si/Sb80Te20 nanometer compound multi-layer phase change film and method for preparing same |
| 09/14/2011 | CN101162758B Method of manufacturing a phase change memory device comprising surface treating process of a phase change layer |
| 09/13/2011 | US8018025 Nonvolatile memory cell comprising a reduced height vertical diode |
| 09/13/2011 | US8017453 Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
| 09/09/2011 | WO2011109019A1 Resistive switches |
| 09/08/2011 | US20110216576 Information recording/reproducing device |
| 09/08/2011 | US20110216575 Nonvolatile memory device and nonvolatile memory apparatus |
| 09/08/2011 | US20110215288 Semiconductor storage device and manufacturing method thereof |
| 09/01/2011 | WO2011106329A1 Structure and fabrication method for resistance-change memory cell in 3-d memory |
| 09/01/2011 | WO2011106156A2 A memory cell that includes a carbon-based memory element and methods of forming the same |
| 09/01/2011 | WO2011105060A1 Method for manufacturing nonvolatile memory device, nonvolatile memory element, and nonvolatile memory device |
| 09/01/2011 | WO2011084334A3 Carbon/tunneling-barrier/carbon diode |
| 09/01/2011 | US20110210307 Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell |
| 09/01/2011 | US20110210306 Memory cell that includes a carbon-based memory element and methods of forming the same |
| 09/01/2011 | US20110210305 Method to program a memory cell comprising a carbon nanotube fabric element and a steering element |
| 09/01/2011 | US20110210301 Non-volatile semiconductor memory device and method of manufacturing non-volatile semiconductor memory device |
| 09/01/2011 | US20110210300 Reducing Temporal Changes in Phase Change Memories |
| 08/31/2011 | EP2361438A1 Electrically actuated device and method of controlling the formation of dopants therein |
| 08/31/2011 | CN102169958A Nanocomposite phase-change material, preparation method and application thereof in phase-change memory |
| 08/31/2011 | CN102169957A Bipolar resistive random access memory and preparation method thereof |
| 08/31/2011 | CN102169956A WOx-based resistive memory and preparation method thereof |
| 08/31/2011 | CN101271961B Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same |
| 08/30/2011 | US8008700 Non-volatile memory cell with embedded antifuse |
| 08/30/2011 | US8008167 Phase change memory device having an increased sensing margin for cell efficiency and method for manufacturing the same |
| 08/25/2011 | US20110207284 Solid-state memory manufacturing method |
| 08/25/2011 | US20110205790 Phase-change memory device |
| 08/25/2011 | US20110205781 Non-volatile semiconductor memory device |
| 08/25/2011 | US20110204316 Structure And Fabrication Method For Resistance-Change Memory Cell In 3-D Memory |
| 08/25/2011 | US20110204315 Nonvolatile Memory Devices that Use Resistance Materials and Internal Electrodes, and Related Methods and Processing Systems |
| 08/25/2011 | US20110204314 Resistive memory cells and devices having asymmetrical contacts |
| 08/25/2011 | US20110204313 Electrode Diffusions in Two-Terminal Non-Volatile Memory Devices |
| 08/25/2011 | US20110204312 Confinement techniques for non-volatile resistive-switching memories |