H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof

Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
11/2011
11/17/2011	WO2011142386A1 Semiconductor device, and method for producing same
11/17/2011	US20110280076 Junctionless tft nand flash memory
11/17/2011	US20110280064 Composite resistance variable element and method for manufacturing the same
11/17/2011	US20110278532 Tri layer metal oxide rewritable non volatile two terminal memory element
11/17/2011	US20110278531 Forming Electrodes for Chalcogenide Containing Devices
11/17/2011	US20110278530 Memory device incorporating a resistance variable chalcogenide element
11/17/2011	US20110278529 Memory employing diamond-like carbon resistivity-switchable material and methods of forming the same
11/17/2011	US20110278528 Self aligned fin-type programmable memory cell
11/16/2011	EP2386115A2 Memory cell having dielectric memory element
11/16/2011	CN102244196A Sequential controllable nanometer silicon quantum dot array resistive random access memory and preparation method thereof
11/16/2011	CN102244195A Forming electrodes for chalcogenide containing devices
11/16/2011	CN102244194A Self aligned fin-type programmable memory cell
11/16/2011	CN102244193A Ruthenium (Ru)-doped tantalum oxide based resistive memory and preparation method thereof
11/16/2011	CN101106177B Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices
11/10/2011	WO2011106156A3 A memory cell that includes a carbon-based memory element and methods of forming the same
11/10/2011	US20110273920 Switching element and application of the same
11/10/2011	US20110273755 Dynamically reconfigurable holograms
11/10/2011	US20110272664 Semiconductor device and method of manufacturing the same
11/10/2011	US20110272663 Nonvolatile memory device using variable resistive element
11/10/2011	US20110272662 Forced Ion Migration for Chalcogenide Phase Change Memory Device
11/10/2011	US20110272661 Resistive memory device and method of fabricating the same
11/10/2011	US20110272660 Resistive memory and methods of processing resistive memory
11/09/2011	CN102239558A Nonvolatile memory element and manufacturing method therefor
11/09/2011	CN102239557A Nonvolatile storage device and method for manufacturing the device
11/09/2011	CN102237492A Formation method for phase-change memory unit
11/09/2011	CN102237491A Manganese oxide base resistance memory containing silicon doping and preparation method thereof
11/09/2011	CN102237490A Novel phase-change memory unit structure and preparation process thereof
11/09/2011	CN102237489A Novel phase-change memory unit structure and preparation method thereof
11/09/2011	CN102237488A Phase-change random access memory device unit and preparation method thereof
11/09/2011	CN102237390A Semiconductor device and method of manufacturing same
11/09/2011	CN102237309A Method for integrating manganese-oxide-based resistive memory with copper interconnection rear end process
11/03/2011	WO2011135843A1 Variable resistance nonvolatile storage device and method for manufacturing same
11/03/2011	WO2011106155A3 Memory cell with silicon-containing carbon switching layer and methods for forming the same
11/03/2011	US20110267873 Non-volatile memory with programmable capacitance
11/03/2011	US20110266516 Phase change memory device capable of reducing disturbance and method of manufacturing the same
11/03/2011	US20110266515 Memristive switch device
11/03/2011	US20110266514 Memory cell comprising a carbon nanotube fabric element and a steering element
11/03/2011	US20110266513 Superconductor Memristor Devices
11/03/2011	US20110266512 Non-volatile resistance-switching thin film devices
11/03/2011	US20110266511 Phase Change Memory Device with Air Gap
11/03/2011	US20110266510 Controlled Placement of Dopants in Memristor Active Regions
11/02/2011	EP2383811A2 Reduced power consumption phase change memory and methods for forming the same
11/02/2011	CN102231424A Phase change memory cell and phase change memory
11/02/2011	CN101842897B Nonvolatile semiconductor storage device and method for manufacturing the same
11/01/2011	US8049303 Semiconductor device with power noise suppression
11/01/2011	US8049196 Phase-change memory device
10/2011
10/27/2011	WO2011132423A1 Non-volatile storage device and method for manufacturing the same
10/27/2011	WO2011106329A4 Structure and fabrication method for resistance-change memory cell in 3-d memory
10/27/2011	US20110261608 Self-Repairing Memristor and Method
10/27/2011	US20110260135 Method for Doping an Electrically Actuated Device
10/27/2011	US20110260134 Thermally Stable Nanoscale Switching Device
10/27/2011	US20110260133 Switching element and manufacturing method thereof
10/27/2011	US20110260132 High concentration nitrogen-containing germanium telluride based memory devices and processes of making
10/26/2011	CN102227809A Nonvolatile memory element
10/26/2011	CN102227015A Phase transition storage material and preparation method thereof
10/26/2011	CN102227014A Resistive random access memory possessing metal nanocrystalline electrode and preparation method thereof
10/26/2011	CN101752497B Phase-change storage unit with low power consumption and high stability and preparation method thereof
10/26/2011	CN101459219B Current constricting phase change memory element structure
10/25/2011	US8045369 Semiconductor device and driving method of the same
10/20/2011	WO2011130212A1 Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
10/20/2011	US20110253968 Resistive memory array using p-i-n diode select device and methods of fabrication thereof
10/20/2011	US20110253967 Switching device, drive and manufacturing methods for the same, integrated circuit device and memory device
10/20/2011	US20110253966 Ionic-modulated dopant profile control in nanoscale switching devices
10/20/2011	US20110253965 Vertical transistor phase change memory
10/19/2011	EP2002491B1 Reduced power consumption phase change memory and methods for forming the same
10/19/2011	EP1801898B1 Integrated circuit device and fabrication using metal-doped chalcogenide materials
10/19/2011	CN102222764A Method for manufacturing phase change memory
10/19/2011	CN102222763A RRAM (resistive random access memory) with electric-field enhancement layer and manufacturing method thereof
10/19/2011	CN102220088A Alkaline nanometer polishing slurry for chemical mechanical planarization of zinc oxide, and application thereof
10/19/2011	CN102219898A Poly-schiff base for resistance-type storage material
10/13/2011	US20110248235 Variable resistance memory devices and methods for fabricating the same
10/13/2011	US20110248233 Method for fabricating a phase-change memory cell
10/12/2011	CN102217067A Non-volatile memory device and method for producing same
10/12/2011	CN102214790A Resistive random access memory with self-rectifying effect
10/12/2011	CN102214789A Memory device and method of manufacturing the same
10/12/2011	CN102214673A Semiconductor device and method for fabricating the same
10/12/2011	CN102212316A Acidic nano polishing solution for chemical mechanical planarization of zinc oxide and application thereof
10/12/2011	CN101764197B Method for manufacturing nano-sized phase change memory
10/11/2011	US8035096 Switching device, rewritable logic integrated circuit, and memory device
10/11/2011	US8035095 Resistive random access memory device
10/06/2011	WO2011121970A1 Forming method for variable resistance non-volatile memory element and variable resistance non-volatile memory device
10/06/2011	US20110242874 Resistive memory and method for controlling operations of the same
10/06/2011	US20110242873 Photo-Responsive Memory Resistor and Method of Operation
10/06/2011	US20110240952 Programmable crosspoint device with an integral diode
10/06/2011	US20110240951 Memristive device
10/06/2011	US20110240949 Information recording device and method of manufacturing the same
10/06/2011	US20110240948 Memory device and method of manufacturing the same
10/06/2011	US20110240945 Method and Apparatus for Reducing Programmed Volume of Phase Change Memory
10/06/2011	US20110240944 Phase change memory device with plated phase change material
10/06/2011	US20110240943 Immunity of Phase Change Material to Disturb in the Amorphous Phase
10/06/2011	US20110240942 Variable resistance element and nonvolatile semiconductor memory device using the same
10/06/2011	US20110240941 Silicon-Based Memristive Device
10/05/2011	EP2232602B1 Multilayer structure comprising a phase change material layer and a method of producing the same
10/05/2011	EP1793424B1 Nonvolatile memory
10/05/2011	CN202004045U Bipolar resistive random access memory
10/05/2011	CN102208534A Three-terminal full-control-type switch element based on resistance-variation material and preparation method thereof
10/05/2011	CN102208532A Resistive random access memory using electric field enhancing layer and preparation method thereof
10/05/2011	CN102208531A High density resistive random access memory cell
10/05/2011	CN101826546B Resistor conversion memory cell limited by nano-scale side wall and manufacturing method thereof
10/05/2011	CN101257088B Memory element and semiconductor device, and method for manufacturing the same

1 ... 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 ... 85