H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof

Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
12/2011
12/29/2011	US20110317472 Nonvolatile semiconductor memory device
12/29/2011	US20110317471 Nonvolatile stacked nand memory
12/29/2011	US20110317470 Rectification element and method for resistive switching for non volatile memory device
12/29/2011	US20110315948 Memory Device Using Ion Implant Isolated Conductive Metal Oxide
12/29/2011	US20110315944 Resistive memory and methods of processing resistive memory
12/29/2011	US20110315943 Memory Device Using A Dual Layer Conductive Metal Oxide Structure
12/29/2011	US20110315942 Solid-state memory
12/28/2011	CN102301425A 电阻变化元件的驱动方法、初始处理方法、以及非易失性存储装置 Method of driving resistance variable element, an initial treatment, and non-volatile memory device
12/28/2011	CN102299258A 电阻存储器存储单元的制作方法 The method of making the memory cell resistance
12/28/2011	CN102299107A 相变存储器存储单元底电极的制作方法 The method of making a memory cell of the bottom electrode of the phase change
12/28/2011	CN102299106A 相变存储器存储单元及其制作方法 Memory cell and method of making the phase transition
12/28/2011	CN102298970A 可变电阻器件及半导体装置以及该半导体装置的操作方法 The variable resistance device and a semiconductor device and a method of operating a semiconductor device
12/28/2011	CN101783356B 半导体存储器结构 Semiconductor memory arrangement
12/28/2011	CN101504968B 相变化存储装置及其制造方法 Phase change memory device and manufacturing method thereof
12/28/2011	CN101436643B 一种包含热保护底电极的相变化存储单元及其制作方法 A phase change memory cell and method of making the bottom electrode contains thermal protection
12/27/2011	US8084768 Semiconductor device
12/27/2011	US8084762 Resistive memory
12/27/2011	US8084761 Structure for phase change memory and the method of forming same
12/22/2011	WO2011159584A1 Memory cell with resistance-switching layers including breakdown layer
12/22/2011	WO2011159583A2 Composition of memory cell with resistance-switching layers
12/22/2011	WO2011159582A2 Memory cell with resistance- switching layers and lateral arrangement
12/22/2011	WO2011159581A2 Memory cell with resistance-switching layers
12/22/2011	WO2011158821A1 Semiconductor device and manufacturing method for semiconductor device
12/22/2011	WO2011158691A1 Variable resistance element and method for manufacturing the same
12/22/2011	WO2011157096A1 Resistive random access memory device and manufacturing method thereof
12/22/2011	US20110310656 Memory Cell With Resistance-Switching Layers Including Breakdown Layer
12/22/2011	US20110310655 Composition Of Memory Cell With Resistance-Switching Layers
12/22/2011	US20110310654 Memory Cell With Resistance-Switching Layers And Lateral Arrangement
12/22/2011	US20110310653 Memory Cell With Resistance-Switching Layers
12/22/2011	US20110309322 Resistance change memory device with three-dimensional structure, and device array, electronic product and manufacturing method therefor
12/22/2011	US20110309321 Memristors with a switching layer comprising a composite of multiple phases
12/22/2011	US20110309319 Horizontally oriented and vertically stacked memory cells
12/22/2011	US20110309318 Nonvolatile semiconductor memory device and method for manufacturing nonvolatile semiconductor memory device
12/22/2011	DE102007045812B4 Verfahren zum Herstellen einer Speicherzelle, Speicherzelle sowie integrierte Schaltung A method for fabricating a memory cell, memory cell and integrated circuit
12/21/2011	EP1812977B1 Electroless plating of metal caps for chalcogenide-based memory devices
12/21/2011	CN102292814A 非易失性存储元件、非易失性存储装置、非易失性半导体装置和非易失性存储元件的制造方法 The method of manufacturing a nonvolatile memory element, a nonvolatile memory device, a nonvolatile semiconductor device and a non-volatile storage elements
12/21/2011	CN102290528A 存储装置及其制造方法 Storage device and manufacturing method thereof
12/21/2011	CN102290428A 一种存储装置及其制作方法 A storage device and manufacturing method thereof
12/21/2011	CN101779287B 电阻变化型非易失性存储装置 Resistance variable type nonvolatile memory device
12/21/2011	CN101764196B 一种纳米尺寸相变存储器的制作方法 Method of making a nano-sized memory phase change
12/21/2011	CN101635331B 电阻式存储器件及其制造方法 Resistive memory device and manufacturing method thereof
12/21/2011	CN101183705B 具有固溶体层的电阻式随机存取存储器及其制造方法 Resistive random access memory and a manufacturing method having the solid solution layer
12/21/2011	CN101171696B 用于珀耳帖控制的相变存储器的方法和结构 Peltier control for phase change memory method and structure
12/20/2011	US8080816 Silver-selenide/chalcogenide glass stack for resistance variable memory
12/15/2011	WO2011155210A1 Non-volatile memory element and non-volatile memory device equipped with same
12/15/2011	US20110306174 Patterning Method for High Density Pillar Structures
12/15/2011	US20110305074 Self-aligned bit line under word line memory array
12/15/2011	US20110305064 Interface control for improved switching in rram
12/15/2011	US20110303890 Electrically Actuated Device
12/15/2011	US20110303888 Nonvolatile memory device
12/15/2011	US20110303887 Memory storage device and method of manufacturing the same
12/15/2011	DE10297198B4 Speicher mit Kohlenstoff enthaltende Zwischenschicht, insbesondere für einen Phasenübergangsspeicher und Verfahren zur Herstellung Memory with carbon-containing intermediate layer, in particular for a phase-change memory and processes for preparing
12/15/2011	DE102011101192A1 Phasenwechselspeicher und herstellungsverfahren Phase change memory and manufacturing processes
12/15/2011	DE102005005325B4 Verfahren zur Herstellung einer resistiv schaltenden nicht-flüchtigen Speicherzelle A process for producing a resistive switching non-volatile memory cell
12/14/2011	EP2393957A1 Method of forming memory cell using gas cluster ion beams
12/14/2011	CN102280578A 基于非晶多元金属氧化物的柔性电阻式非易失性存储器 Amorphous metal oxide-based multi-flexible resistive nonvolatile memory
12/14/2011	CN102280577A 单极阻变器件、单极阻变存储器单元及制备方法 Unipolar resistive switching devices, memory cells and preparation methods unipolar resistive
12/14/2011	CN101689604B 电子装置及其制造方法 Electronic device and method of manufacturing
12/14/2011	CN101685826B 一种具有二极管驱动器的存储阵列及其制造方法 A storage array and its manufacturing method diode driver has
12/14/2011	CN101533890B 氧化锌基同质结构的透明rram元器件及制作方法 Rram transparent zinc oxide components and production methods based homogeneous structure
12/14/2011	CN101485006B 相变合金蚀刻 Phase change alloy etching
12/13/2011	US8076783 Memory devices having contact features
12/08/2011	WO2011152061A1 Cross-point variable-resistance nonvolatile storage device
12/08/2011	WO2011150750A1 Method for manufacturing memory cell including resistor
12/08/2011	WO2011150749A1 Resistive random access memory device, manufacturing method and operation method thereof
12/08/2011	US20110300683 Semiconductor device and method of forming the same
12/08/2011	US20110297912 Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof
12/08/2011	US20110297910 Method of fabrication of programmable memory microelectric device
12/08/2011	US20110297908 Phase Change Memory Cells and Fabrication Thereof
12/07/2011	EP2392037A1 Programmable metallization memory cell with layered solid electrolyte structure
12/07/2011	CN102270739A 一种含有快速开关器件的阻变型存储器单元及其制备方法 A resistive-type memory cell and preparation method of fast switching device comprising
12/07/2011	CN102270738A 包含电阻器的存储单元的制造方法 The method of manufacturing a resistor comprising a storage unit
12/07/2011	CN101789492B 一种平面相变存储器的制备方法 Preparation of a planar phase change memory
12/07/2011	CN101728482B 相变半导体器件的制造方法及相变半导体器件 The method of manufacturing a semiconductor device and a phase change phase change semiconductor device
12/06/2011	US8071971 Semiconductor device including air gap
12/06/2011	US8071969 Semiconductor memory device and method for manufacturing same
12/01/2011	WO2011148944A1 Thin film magnetic device and method for manufacturing same
12/01/2011	US20110291067 Threshold Device For A Memory Array
12/01/2011	US20110291065 Phase change memory cell structures and methods
12/01/2011	US20110291064 Resistance variable memory cell structures and methods
12/01/2011	US20110291063 Semiconductor memory device
12/01/2011	DE112007002328B4 Elektrisch betätigter Schalter und Verfahren zum Konfigurieren einer EIN/AUS-Polarität eines Schalters Electrically operated switch and method for configuring an ON / OFF switch polarity of a
11/2011
11/30/2011	EP2304819B1 Memory device and cbram memory having improved reliability
11/30/2011	EP2077580B1 Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element
11/30/2011	CN1573844B 图像显示装置 The image display apparatus
11/30/2011	CN102265400A 展示减少的分层的基于碳的存储器元件和形成其的方法 Show reduction of carbon-based hierarchical memory element and its method of formation
11/30/2011	CN101577307B 电阻存储器的存储单元及其制作方法 Storage units and production methods of resistance memory
11/30/2011	CN101572246B 电阻存储器、含有电阻存储器的集成电路的制作方法 Production Method resistance memory, memory integrated circuits containing resistance
11/29/2011	US8067260 Fabricating sub-lithographic contacts
11/24/2011	US20110286260 Nonvolatile memory device and method for driving same
11/24/2011	US20110284817 Nonvolatile semiconductor memory device and manufacturing method thereof
11/24/2011	US20110284816 Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method of manufacturing nonvolatile memory element
11/24/2011	US20110284814 Large Bit-Per-Cell Three-Dimensional Mask-Programmable Read-Only Memory
11/23/2011	CN102255045A MgxZn1-xO electrically induced resistance change film and preparation method of asymmetrical structure heterojunction thereof
11/23/2011	CN102255044A Nanosecond reversible phase transformation material and method for measuring phase transformation mechanism of same
11/23/2011	CN102255043A Method for improving resistive storage performance of strontium titanate stannate thin film
11/23/2011	CN102254864A Method for manufacturing phase change memory element
11/23/2011	CN102254803A Method for manufacturing resistive type memory
11/23/2011	CN101546810B Multilevel resistance conversion storage material containing germanium, antimony and selenium and application thereof
11/22/2011	US8063393 Memory devices, stylus-shaped structures, electronic apparatuses, and methods for fabricating the same

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