| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 02/08/2012 | CN102347443A Non-volatile memory element and memory device including same |
| 02/08/2012 | CN102347442A Method for making phase change memory structure |
| 02/08/2012 | CN102347441A Method for forming resistive memory |
| 02/08/2012 | CN102347440A Resistive memory and preparation method thereof |
| 02/08/2012 | CN101523629B 存储器密度提高的电阻可变存储器单元、包括其的阵列、装置和系统，及其制造方法 The resistance variable memory density of a memory cell, including an array of devices and systems, and its manufacturing method |
| 02/08/2012 | CN101300689B 增加相变存储器列平台裕量 Increase the phase-change memory column platform margin |
| 02/07/2012 | US8110429 Bridge resistance random access memory device and method with a singular contact structure |
| 02/02/2012 | WO2012014447A1 Method for fabricating nonvolatile memory device |
| 02/02/2012 | US20120026780 Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices |
| 02/02/2012 | US20120026776 Memory resistor having plural different active materials |
| 02/02/2012 | US20120025379 Front-end processing of nickel plated bond pads |
| 02/02/2012 | US20120025164 Variable resistance memory with a select device |
| 02/02/2012 | US20120025163 Non-volatile semiconductor device |
| 02/02/2012 | US20120025162 Phase change random access memory and method for fabricating the same |
| 02/02/2012 | US20120025161 Diode and resistive memory device structures |
| 02/02/2012 | US20120025160 Nonvolatile memory device |
| 02/02/2012 | US20120025159 Nonvolatile memory device |
| 02/01/2012 | CN102341930A Programmable metallization memory cell with layered solid electrolyte structure |
| 02/01/2012 | CN102339952A Memory element and drive method for the same, and memory device |
| 02/01/2012 | CN102339951A DRAM (Dynamic Random Access Memory) phase change memory unit and phase change memory for replacing DRAM |
| 02/01/2012 | CN102339950A Nonvolatile memory device and method for manufacturing same |
| 02/01/2012 | CN102339949A High-reliability one-time programmable (OTP) memory unit, memory and manufacturing method thereof |
| 02/01/2012 | CN102339948A High-consistency resistive memory and preparation method thereof |
| 01/31/2012 | US8106375 Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator |
| 01/31/2012 | US8105859 In via formed phase change memory cell with recessed pillar heater |
| 01/26/2012 | US20120020143 Array Operation Using A Schottky Diode As A Non Ohmic Selection Device |
| 01/26/2012 | US20120020140 Resistive memory cell and operation thereof, and resistive memory and operation and fabrication thereof |
| 01/26/2012 | US20120018698 Low-power nanoscale switching device with an amorphous switching material |
| 01/26/2012 | US20120018696 Vertical phase change memory cell |
| 01/26/2012 | US20120018695 Non-Volatile Memory Element And Memory Device Including The Same |
| 01/26/2012 | US20120018693 Confined resistance variable memory cell structures and methods |
| 01/25/2012 | EP2410531A2 Non-volatile memory element and memory device including the same |
| 01/25/2012 | CN1996572B Method of fabricating phase change ram |
| 01/25/2012 | CN102334187A Resistive memory element and use thereof |
| 01/25/2012 | CN102332531A Two terminal resistive switching device structure and method of fabricating |
| 01/25/2012 | CN102332530A Memory cell with spacer heating electrode and phase change material and preparation method |
| 01/25/2012 | CN102332305A Non-volatile re-programmable memory device |
| 01/24/2012 | US8101983 Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same |
| 01/19/2012 | WO2012008160A1 Nonvolatile storage device and process for production thereof |
| 01/19/2012 | WO2012006869A1 High consistency resistive memory and manufacturing method thereof |
| 01/19/2012 | US20120012810 Optoelectronic light exposure memory |
| 01/19/2012 | US20120012807 Semiconductor memory device |
| 01/19/2012 | US20120012806 Improved on/off ratio for non-volatile memory device and method |
| 01/19/2012 | US20120012805 Nonvolatile memory device and method for manufacturing same |
| 01/19/2012 | US20120012804 Thermal diode device and methods |
| 01/19/2012 | US20120012803 Nonvolatile memory device and method for manufacturing the same |
| 01/18/2012 | EP2408035A2 Two terminal resistive switching device structure and method of fabricating |
| 01/18/2012 | EP1929556B1 Reproducible resistance variable insulating memory devices and methods for forming same |
| 01/18/2012 | CN1898749B Memory device, memory circuit and semiconductor integrated circuit having variable resistance |
| 01/18/2012 | CN102326253A Resistive memory element and use thereof |
| 01/18/2012 | CN101461071B A vertical phase change memory cell and methods for manufacturing thereof |
| 01/18/2012 | CN101405883B Reduced power consumption phase change memory and methods for forming the same |
| 01/17/2012 | US8097875 Semiconductor memory device |
| 01/17/2012 | US8097873 Phase change memory structures |
| 01/12/2012 | WO2012003821A1 Ionically controlled three-gate component |
| 01/12/2012 | US20120008370 Memory element and memory device |
| 01/12/2012 | US20120008369 Memory element and drive method for the same, and memory device |
| 01/12/2012 | US20120008366 RESTIVE MEMORY USING SiGe MATERIAL |
| 01/12/2012 | US20120007037 CROSS-POINT MEMORY UTILIZING Ru/Si DIODE |
| 01/12/2012 | US20120007036 Phase-change memory device and method of fabricating the same |
| 01/12/2012 | US20120007035 Intrinsic Programming Current Control for a RRAM |
| 01/12/2012 | US20120007034 Phase-change memory device having multiple diodes |
| 01/12/2012 | US20120007033 Phase-change memory device and method of manufacturing the same |
| 01/12/2012 | US20120007032 Phase-change memory device and method of fabricating the same |
| 01/12/2012 | US20120007031 Phase change memory cell with heater and method therefor |
| 01/11/2012 | CN102315387A RRAM structure and method of making the same |
| 01/11/2012 | CN102315386A Manufacturing method of phase change memory storage unit |
| 01/11/2012 | CN102315385A Method for making storage unit of phase-change random access memory |
| 01/11/2012 | CN102315384A Phase change random access memory and bottom electrode and making method thereof |
| 01/11/2012 | CN102315242A Resistive memory using sige material |
| 01/11/2012 | CN101887903B Phase change memory with transistor, resistor and capacitor and operating method thereof |
| 01/11/2012 | CN101814579B Preparation method for high density phase-change memory |
| 01/11/2012 | CN101794862B Manufacturing method of vertical phase-change memory |
| 01/05/2012 | WO2012001993A1 Variable resistance non-volatile storage element, variable resistance non-volatile storage device, and manufacturing method for variable resistance non-volatile storage element |
| 01/05/2012 | WO2012001978A1 Nonvolatile memory element and method for manufacturing same |
| 01/05/2012 | WO2012001960A1 Nonvolatile memory cell, nonvolatile memory cell array, and method for manufacturing the nonvolatile memory cell array |
| 01/05/2012 | WO2012001944A1 Non-volatile memory device and drive method therefor |
| 01/05/2012 | WO2012001599A2 Method for manufactoring a carbon-based memory element and memory element |
| 01/05/2012 | US20120002465 Methods, structures, and devices for reducing operational energy in phase change memory |
| 01/05/2012 | US20120001148 Stress-engineered resistance-change memory device |
| 01/05/2012 | US20120001147 Non-Volatile Resistive Oxide Memory Cells, Non-Volatile Resistive Oxide Memory Arrays, And Methods Of Forming Non-Volatile Resistive Oxide Memory Cells And Memory Arrays |
| 01/05/2012 | US20120001146 Nanoscale metal oxide resistive switching element |
| 01/05/2012 | US20120001145 Avoiding degradation of chalcogenide material during definition of multilayer stack structure |
| 01/05/2012 | US20120001144 Resistive ram devices and methods |
| 01/05/2012 | US20120001143 Switchable Junction with Intrinsic Diode |
| 01/05/2012 | US20120001142 Carbon-based memory element |
| 01/05/2012 | US20120001141 RRAM structure and method of making the same |
| 01/05/2012 | US20120001140 Voltage sensitive resistor (vsr) read only memory |
| 01/04/2012 | EP2402953A1 Phase change memory coding before packaging |
| 01/04/2012 | CN102308017A Method of forming memory cell using gas cluster ion beams |
| 01/04/2012 | CN102306706A Multi-resistance-state resistance random access memory and method for implementing multiple resistance states utilizing same |
| 01/04/2012 | CN102306705A Multi-valued resistance random access memory with high capacity |
| 01/04/2012 | CN102306655A Three-dimensional storage device array structure and manufacturing method thereof |
| 01/04/2012 | CN101145600B Storage element and storage device using the same |
| 01/03/2012 | US8089111 Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof |
| 01/03/2012 | US8089059 Programmable resistance memory element |
| 12/29/2011 | WO2011161936A1 Method for manufacturing variable resistance element |
| 12/29/2011 | WO2011161227A1 Memory cell with parallel electrical paths |
| 12/29/2011 | US20110318911 Nonvolatile memory cell comprising a reduced height vertical diode |
| 12/29/2011 | US20110317481 Planar phase-change memory cell with parallel electrical paths |