Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
03/2012
03/15/2012US20120064691 Method For Fabricating Multi Resistive State Memory Devices
03/15/2012US20120063201 Nonvolatile memory element, production method therefor, design support method therefor, and nonvolatile memory device
03/15/2012US20120063197 Switchable junction with an intrinsic diode formed with a voltage dependent resistor
03/15/2012US20120063194 Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same
03/15/2012US20120061639 Resistance change memory
03/15/2012US20120061638 Memory element and memory device
03/15/2012US20120061637 3-d structured nonvolatile memory array and method for fabricating the same
03/14/2012EP2429007A2 Reproducible resistance variable insulating memory devices and methods for forming same
03/14/2012EP1770778B1 Apparatus for obtaining double stable resistance values, method for manufacturing the same, metal oxide thin film and method for manufacturing the same
03/14/2012CN102379009A Diamond type quad-resistor cells of pram
03/14/2012CN102376888A Forming resistive random access memories together with fuse arrays
03/14/2012CN102376887A Memory device
03/14/2012CN102376886A Nonvolatile memory elements and memory devices including the same
03/14/2012CN102376885A Phase change memory cell in semiconductor chip and method for fabricating the phase change memory cell
03/14/2012CN102376884A Manufacturing method of phase change layer of phase change random access memory
03/14/2012CN102376883A Manufacturing method of phase change memory
03/14/2012CN102376882A Forming method of ring electrode
03/14/2012CN102376881A Method for manufacturing memory unit of phase-change random access memory
03/14/2012CN102376880A Memory unit for phase-change memory and production method thereof
03/14/2012CN102376879A Method for forming phase-change memory
03/14/2012CN102376878A Manufacture method for bottom electrode of phase change memory
03/14/2012CN102376877A Phase change memory and forming method thereof
03/14/2012CN102376876A Phase change nonvolatile memory and processing method thereof
03/14/2012CN102376354A 存储元件和存储装置 Memory element and the memory device
03/14/2012CN101714609B Chalcogenide material memory device and manufacturing method thereof
03/14/2012CN101609868B Manufacturing method for copper oxide nanometer particle film non-volatile memorizer prototype device
03/13/2012US8134860 Shunted phase change memory
03/13/2012US8134139 Programmable metallization cell with ion buffer layer
03/13/2012US8133793 Carbon nano-film reversible resistance-switchable elements and methods of forming the same
03/08/2012US20120056149 Methods for adjusting the conductivity range of a nanotube fabric layer
03/08/2012US20120056148 Semiconductor device
03/08/2012US20120056147 Large array of upward pointinig p-i-n diodes having large and uniform current
03/08/2012US20120056146 Resistive memory architectures with multiple memory cells per access device
03/08/2012US20120056145 Nonvolatile memory device and method for manufacturing same
03/07/2012CN102368536A Resistive random access memory (RRAM) unit
03/07/2012CN102368535A Erasable double layer film structure resistance variation memory cell and preparation method thereof
03/07/2012CN101894853B Phase change random access memory and manufacturing method
03/07/2012CN101878530B Nonvolatile storage element and nonvolatile storage device using same
03/06/2012US8129709 Nonvolatile memory device
03/06/2012US8129705 Nonvolatile memory device and method of manufacturing the same
03/06/2012US8129214 Phase change memory devices having dual lower electrodes and methods of fabricating the same
03/01/2012WO2012026507A1 Drive method for memory element and storage device using memory element
03/01/2012WO2012026506A1 Drive method for memory element, and storage device using memory element
03/01/2012US20120052649 Bistable nanoswitch
03/01/2012US20120051123 Phase change memory structures and methods
03/01/2012US20120049148 Three-dimensional nonvolatile semiconductor memory
03/01/2012US20120049147 Resistance-variable memory device and a production method therefor
03/01/2012US20120049146 Memory Cells and Methods of Forming Memory Cells
03/01/2012US20120049145 Non-Volatile Memory Elements And Memory Devices Including The Same
03/01/2012US20120049144 Post-Fabrication Self-Aligned Initialization of Integrated Devices
02/2012
02/29/2012EP2423963A2 Non-volatile memory elements and memory devices including the same
02/29/2012EP1969649B1 Phase change current density control structure
02/29/2012CN101826463B Schottky diode and phase-change memory which share metal layer and manufacturing method thereof
02/29/2012CN101783391B Nano-composite phase change material, preparation method thereof and application thereof as phase change memory
02/28/2012US8124955 Memory devices and methods of forming the same
02/23/2012WO2012023269A1 Nonvolatile storage device and method for manufacturing same
02/23/2012WO2012023266A1 Changing resistance-type nonvolatile memory device
02/23/2012US20120044753 Programmably reversible resistive device cells using cmos logic processes
02/23/2012US20120044749 Variable resistance nonvolatile storage device and method of forming memory cell
02/23/2012US20120044747 Reversible resistive memory using diodes formed in cmos processes as program selectors
02/23/2012US20120044746 Circuit and system of using a junction diode as program selector for resistive devices
02/23/2012US20120044745 Reversible resistive memory using polysilicon diodes as program selectors
02/23/2012US20120044744 Programmably reversible resistive device cells using polysilicon diodes
02/23/2012US20120044743 Circuit and system of using a polysilicon diode as program selector for resistive devices in cmos logic processes
02/23/2012US20120043519 Device switching using layered device structure
02/23/2012DE102007032503B4 Verfahren zur Bildung einer Phasenänderungsmaterialschicht, Verfahren zur Bildung eines Phasenänderungsspeicherbauelements, sowiePhasenänderungsmaterialschicht und Phasenänderungsspeicherbauelement A method of forming a phase change material layer, method of forming a phase change memory device, as well as phase-change material layer and phase change memory device
02/22/2012CN102361063A Thin film material for phase change memory and preparation method thereof
02/22/2012CN101894910B 基于非化学剂量比的氮氧硅的双极阻变存储器及制备方法 Based on the non-stoichiometry of the bipolar variable resistance ratio of silicon oxynitride and a memory preparation
02/21/2012US8120005 Phase change memory devices and their methods of fabrication
02/16/2012WO2012019843A1 One-mask phase change memory process integration
02/16/2012US20120039116 Phase change memory device comprising bismuth-tellurium nanowires
02/16/2012US20120039113 Three dimensionally stacked non volatile memory units
02/16/2012US20120039111 Polarity dependent switch for resistive sense memory
02/16/2012US20120037879 Non volatile memory device ion barrier
02/16/2012US20120037877 One-mask phase change memory process integration
02/16/2012US20120037876 Resistance Random Access Memory Structure for Enhanced Retention
02/16/2012US20120037875 Mirrored-gate cell for non-volatile memory
02/16/2012US20120037874 Semiconductor device and method of manufacturing the same
02/16/2012US20120037873 Memory device
02/16/2012US20120037872 Memory device
02/16/2012US20120037871 Novel bifunctional molecules comprising a cycloalkyne or heterocycloalkyne group and a redox group
02/15/2012EP2417629A2 Semiconductor processing
02/15/2012EP2417601A2 Diamond type quad-resistor cells of pram
02/15/2012EP2417600A2 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
02/15/2012CN102354729A Nanometer multi-layer composite phase-change film material for multilevel storage phase-change memory, as well as preparation and application thereof
02/15/2012CN102352488A Antimony and germanium complexes useful for CVD/ALD of metal thin films
02/15/2012CN101764194B 相变化存储装置及其制造方法 Phase change memory device and manufacturing method thereof
02/14/2012US8115239 Electric device comprising phase change material
02/14/2012US8115188 Memory element and display device
02/09/2012US20120032136 Forming Resistive Random Access Memories Together With Fuse Arrays
02/09/2012US20120032134 Memristive Junction with Intrinsic Rectifier
02/09/2012US20120032133 Surface treatment to improve resistive-switching characteristics
02/09/2012US20120032132 Nonvolatile Memory Elements And Memory Devices Including The Same
02/09/2012US20120032131 Programmable resistive memory cell with oxide layer
02/09/2012DE102011109359A1 Verfahren zur Herstellung und integrierte Schaltung A process for producing an integrated circuit and
02/08/2012EP2416391A2 Nonvolatile memory elements and memory devices including the same
02/08/2012EP2416390A1 Electrochromic thin film transistors with lateral or vertical structure using functionalized or non-functionalized substrates and method of manufacturing same
02/08/2012CN102347446A Ge-Sb-Te Ge-enriched N-doped phase-change material for phase-change memory and preparation method thereof
02/08/2012CN102347445A Non-volatile semiconductor device
02/08/2012CN102347444A Aluminum copper antimony phase change film and preparation method thereof
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