Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
04/2012
04/19/2012WO2012049789A1 Non-volatile semiconductor memory device
04/19/2012WO2012048521A1 Nio-based resistive random access memory and method for manufacturing same
04/19/2012WO2011159581A3 Memory cell with resistance-switching layers
04/19/2012US20120092935 Semiconductor memory device
04/19/2012US20120092920 Resistive Memory Element and Use Thereof
04/19/2012US20120092919 Resistive Memory Element and Use Thereof
04/19/2012US20120091429 Resistive memory
04/19/2012US20120091427 Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
04/19/2012US20120091426 Resistance-variable element and method for manufacturing the same
04/19/2012US20120091424 Non-volatile memory device and methods for manufacturing the same
04/19/2012US20120091422 Semiconductor Memory Devices Having Variable Resistor And Methods Of Fabricating The Same
04/19/2012US20120091421 Nanostructure quick-switch memristor and method of manufacturing the same
04/19/2012US20120091420 Nonvolatile resistance change device
04/19/2012US20120091419 Memory cells having storage elements that share material layers with steering elements and methods of forming the same
04/19/2012US20120091418 Bipolar storage elements for use in memory cells and methods of forming the same
04/19/2012US20120091417 Multistate nonvolatile memory elements
04/19/2012US20120091415 Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof
04/19/2012US20120091413 Three Dimensional Horizontal Diode Non-Volatile Memory Array and Method of Making Thereof
04/18/2012EP2442377A1 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
04/18/2012CN102420287A 电流相对于由电极定义的轴横向流动的相变化只读存储器 Current with respect to the electrode axis defined by the lateral flow of the phase change read-only memory
04/18/2012CN102420014A 半导体存储设备 The semiconductor memory device
04/18/2012CN102420013A Semiconductor memory device
04/18/2012CN101834272B 基于（Bi<sub>2</sub>O<sub>3</sub>）<sub>1-x</sub>（Y<sub>2</sub>O<sub>3</sub>）<sub>x</sub>固体电解质薄膜的非挥发记忆元件及其制备方法 Based on (Bi <sub> 2 </ sub> O <sub> 3 </ sub>) <sub> 1-x </ sub> (Y <sub> 2 </ sub> O <sub> 3 </ sub> ) non-volatile memory element and its preparation method <sub> x </ sub> solid electrolyte film
04/17/2012US8158966 Phase change memory device having protective layer and method for manufacturing the same
04/12/2012WO2012046454A1 Nonvolatile storage element and method for manufacturing same
04/12/2012US20120087173 Memory element, stacking, memory matrix and method for operation
04/11/2012EP2439801A1 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
04/11/2012EP2439800A1 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
04/11/2012CN102414819A 电阻变化型非易失性存储装置以及存储器单元的形成方法 The method of forming a resistance variable nonvolatile memory device and a memory unit
04/11/2012CN102412367A 相变存储器底部电极的制作方法 The method of making the bottom electrode of a phase change memory
04/11/2012CN102412179A Preparation method for epitaxial diode array isolated by double shallow trenches
04/11/2012CN102408836A 一种用于氧化钛薄膜化学机械平坦化的纳米抛光液及应用 A thin film of titanium oxide nano-chemical mechanical planarization polishing liquid and Applications
04/11/2012CN102408835A 一种用于氧化镍薄膜化学机械平坦化的纳米抛光液及应用 A nickel oxide thin film nano-chemical mechanical planarization polishing liquid and Applications
04/10/2012US8154006 Controlling the circuitry and memory array relative height in a phase change memory feol process flow
04/10/2012US8154004 Hybrid MRAM array structure and operation
04/10/2012US8154003 Resistive non-volatile memory device
04/10/2012US8153471 Method for forming a reduced active area in a phase change memory structure
04/05/2012WO2012044473A1 Counter doping compensation methods to improve diode performance
04/05/2012WO2012043502A1 Semiconductor device
04/05/2012WO2012043154A1 METHOD FOR FORMING Ge-Sb-Te FILM AND STORAGE MEDIUM
04/05/2012WO2012042897A1 Method for manufacturing non-volatile memory element and nonvolatile memory element
04/05/2012WO2012042866A1 Method of forming resistance change non-volatile memory element
04/05/2012WO2012042828A1 Memory element, semiconductor storage device, method of manufacturing memory element, and method of reading from semiconductor storage device
04/05/2012US20120080798 Memory devices having contact features
04/05/2012US20120080656 Graphene oxide memory devices and method of fabricating the same
04/05/2012DE102006038899B4 Festkörperelektrolyt-Speicherzelle sowie Festkörperelektrolyt-Speicherzellenarray Solid electrolyte memory cell and solid electrolyte memory cell array
04/04/2012EP2437324A1 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
04/04/2012CN102405518A Method for forming ge-sb-te film, and storage medium
04/04/2012CN102403459A Silicon-doped bismuth telluride-based memory material for phase-change memory and preparation method of silicon-doped bismuth telluride-based memory material
04/04/2012CN102403458A Memory element and memory device
04/04/2012CN102403457A Memory element and memory device
04/04/2012CN102403456A 一种制作相变存储器元件的方法 A method of making a phase change memory element
04/04/2012CN102403455A 制作相变存储器元件的方法 The method of manufacturing a phase change memory element
04/04/2012CN102403454A 一种制作相变存储器元件的方法 A method of making a phase change memory element
04/04/2012CN102403453A 相变存储器的制作方法 The method of manufacturing a phase change memory
04/04/2012CN102403452A 相变存储器件及其制造方法 Memory device and a method of manufacturing a phase change
04/03/2012US8148711 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element
04/03/2012US8148708 Resistive memory device and method of fabricating the same
04/03/2012US8148707 Ovonic threshold switch film composition for TSLAGS material
03/2012
03/29/2012WO2012039284A1 Electrochemical transistor
03/29/2012US20120077325 Semiconductor memory
03/29/2012US20120075907 Resistor structure for a non-volatile memory device and method
03/29/2012US20120074378 Memory element having elastically deformable active region
03/29/2012US20120074377 Semiconductor memory
03/29/2012US20120074374 Conductive path in switching material in a resistive random access memory device and control
03/29/2012US20120074373 Electronic Devices, Memory Devices and Memory Arrays
03/29/2012US20120074372 Memristors with an electrode metal reservoir for dopants
03/29/2012US20120074371 Resistance variable memory device with nanoparticle electrode and method of fabrication
03/29/2012US20120074370 Phase change memory structures and methods
03/29/2012US20120074369 Nonvolatile memory apparatus, nonvolatile memory element, and nonvolatile memory element array
03/29/2012US20120074367 Counter doping compensation methods to improve diode performance
03/28/2012CN101728483B Dielectric-sandwiched pillar memory device
03/27/2012US8143611 Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method
03/22/2012WO2012035786A1 Current control element and nonvolatile memory element using same
03/22/2012WO2012034394A1 Nonvolatile memory array with three-dimensional structure and manufacturing method thereof
03/22/2012WO2012001599A3 Carbon- based resistive memory element and manufacturing thereof
03/22/2012WO2011159584A4 Memory cell with resistance-switching layers including breakdown layer
03/22/2012US20120069625 Resistance change element and resistance change memory
03/22/2012US20120069624 Reactive metal implated oxide based memory
03/22/2012US20120068149 Apparatus of memory array using finfets
03/22/2012US20120068145 Nonvolatile memory device and method for manufacturing same
03/22/2012US20120068144 Resistance random access memory
03/22/2012US20120068143 Memory Arrays And Methods Of Forming Memory Cells
03/22/2012US20120068142 Resistance random access memory element and method for making the same
03/22/2012US20120068141 Silver-selenide/chalcogenide glass stack for resistance variable memory
03/22/2012US20120068140 Switchable electronic device and method of switching said device
03/22/2012US20120068139 Magnetoresistive element and magnetic memory
03/22/2012US20120068138 Optical storage medium comprising two nonlinear layers
03/22/2012US20120068137 Switching device and memory device including the same
03/22/2012US20120068136 Phase Change Memory Device, Storage System Having the Same and Fabricating Method Thereof
03/21/2012CN102386327A Preparation method of phase-change material
03/21/2012CN102386326A Preparation method of copper nitride resistive material for high-density resistive random access memory
03/21/2012CN102386325A Non-volatile memory elements and memory devices including the same
03/21/2012CN102386324A Method for manufacturing phase change memory element
03/21/2012CN102386323A Phase change memory element and manufacturing method thereof
03/21/2012CN101814578B A semiconductor element and a fabricating method thereof
03/21/2012CN101512788B Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using
03/20/2012US8138028 Method for manufacturing a phase change memory device with pillar bottom electrode
03/15/2012WO2012032730A1 Semiconductor storage device
03/15/2012US20120064693 Semiconductor memory device and method for manufacturing same
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