Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
05/2012
05/30/2012CN101030622B Nonvolatile memory device and nonvolatile memory array including the same
05/29/2012US8188455 Information recording/reproducing device
05/29/2012US8188454 Forming a phase change memory with an ovonic threshold switch
05/24/2012WO2012066787A1 Nonvolatile storage element and method for manufacturing nonvolatile storage element
05/24/2012WO2012066786A1 Method for manufacturing nonvolatile semiconductor storage element, and nonvolatile semiconductor storage element
05/24/2012US20120126196 Upwardly Tapering Heaters for Phase Change Memories
05/24/2012US20120126195 Two terminal multi-layer thin film resistance switching device with a diffusion barrier and methods thereof
05/23/2012EP2455971A1 Memory devices and methods of forming the same
05/23/2012EP1929555B1 Phase change memory cell and method of formation
05/23/2012CN1983619B Data read/write device
05/23/2012CN102473708A Nonvolatile storage device and process for production thereof
05/23/2012CN102473707A 非易失性存储单元、非易失性存储单元阵列、以及其制造方法 A nonvolatile memory unit, a nonvolatile memory cell array, and a manufacturing method thereof
05/23/2012CN102473458A Cross-point variable-resistance nonvolatile storage device
05/23/2012CN102473457A Non-volatile memory device and drive method therefor
05/23/2012CN102473455A 具有活性离子界面区的非易失性存储器 With non-volatile memory reactive ion interfacial region
05/23/2012CN102473454A PCMO non-volatile resitive memory with improved switching
05/23/2012CN102468438A 具有硫属化物梯度的含硫属化物半导体 Sulfur-containing chalcogenide having a chalcogenide semiconductor gradient
05/23/2012CN102468437A 相变存储器的制作方法 The method of manufacturing a phase change memory
05/23/2012CN102468436A 一种相变存储器及其制造方法 Memory and its method of manufacturing a phase change
05/23/2012CN102468435A 相变存储器的制作方法 The method of manufacturing a phase change memory
05/23/2012CN102468434A 相变存储器的制作方法 The method of manufacturing a phase change memory
05/23/2012CN102468433A 相变存储器及其制作方法 Phase change memory and its production methods
05/23/2012CN102468432A 相变半导体器件的制造方法 The method of manufacturing a phase change semiconductor device
05/23/2012CN102468431A 消除相变随机存储器下电极损伤的实现方法 Elimination implementation phase change random access memory of the lower electrode Injury
05/23/2012CN102468430A 提高相变材料粘附性的实现方法 To improve the adhesion of the phase change material to achieve a method
05/23/2012CN102468429A 相变随机存储器的制造方法 The method of manufacturing a phase change random access memory
05/23/2012CN102468428A 相变随机存储器的制造方法 The method of manufacturing a phase change random access memory
05/23/2012CN102468427A 相变存储器的制作方法 The method of manufacturing a phase change memory
05/23/2012CN102468426A 一种电控三级开关器件 An electrically controlled switching device three
05/23/2012CN102468321A Non-volatile memory devices having resistance changeable elements and related systems and methods
05/23/2012CN102005535B Method for preparing plane phase change memory
05/23/2012CN101720508B Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
05/23/2012CN101432878B Variable resistance element, and its manufacturing method
05/23/2012CN101207179B Memory cell and manufacturing method thereof
05/23/2012CN101145599B Memory device having wide area phase change element and small electrode contact area
05/22/2012US8183551 Multi-terminal phase change devices
05/18/2012WO2012063495A1 Process for manufacture of non-volatile semiconductor storage element
05/17/2012US20120122290 Systems and methods for fabricating self-aligned memory cell
05/17/2012US20120120714 Memory resistor having multi-layer electrodes
05/17/2012US20120120709 Transistor Driven 3D Memory
05/17/2012US20120119178 Memory cell that includes a carbon-based memory element and methods of forming the same
05/17/2012US20120119177 Chalcogenide Containing Semiconductors with Chalcogenide Gradient
05/16/2012CN102460757A Electrochromic thin film transistors with lateral or vertical structure using functionalized or non-functionalized substrates and method of manufacturing same
05/16/2012CN102460665A Ge-Sb-Te膜的成膜方法和存储介质 Film-forming method and the storage medium Ge-Sb-Te film
05/16/2012CN102456834A Nonvolatile memory device and manufacturing method thereof
05/16/2012CN102456833A Manufacturing method of memory apparatus, memory device and memory apparatus
05/16/2012CN102456832A Phase change memory cell and forming method thereof
05/16/2012CN102456831A 相变随机存取存储器的存储单元 A storage unit of a phase change random access memory
05/16/2012CN101728481B Method for manufacturing phase-change semiconductor device and phase-change semiconductor device
05/15/2012US8178380 Method for selectively establishing an electrical connection in a multi-terminal phase change device
05/10/2012WO2012061830A1 Electronically controlled squishable composite switch
05/10/2012US20120113706 Memristors based on mixed-metal-valence compounds
05/10/2012US20120112156 Non-Volatile Memory Devices Having Resistance Changeable Elements And Related Systems And Methods
05/10/2012US20120112155 Interconnects for stacked non-volatile memory device and method
05/10/2012US20120112153 Nonvolatile memory device and method of manufacturing the same
05/10/2012US20120112152 Electronically controlled squishable composite switch
05/10/2012US20120112150 Post Deposition Adjustment of Chalcogenide Composition in Chalcogenide Containing Semiconductors
05/10/2012DE102011054829A1 Nichtflüchtige Speichervorrichtung, welche widerstandsveränderlicheElemente hat, und verwandte Systeme und Verfahren Non-volatile storage device which has widerstandsveränderlicheElemente, and related systems and methods
05/09/2012EP2449591A1 Cross point non-volatile memory devices with a plurality of pillars having rounded corners and method of manufacturing
05/09/2012CN102449763A Nonvolatile memory element and method for manufacturing same
05/09/2012CN102449701A Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
05/09/2012CN102447061A Preparation method of high-speed low-power-consumption phase change memory
05/09/2012CN102447060A Manufacturing method for phase change memory
05/09/2012CN102447059A Double-layer phase change resistance and forming method thereof as well as phase change memory and forming method thereof
05/09/2012CN102447058A Manufacturing method for phase change memory bottom electrode
05/09/2012CN102447057A Method for manufacturing bottom electrode of phase change memory
05/09/2012CN102446807A Manufacturing method for trench isolation structure of phase change memory
05/09/2012CN102446806A Manufacturing method for trench isolation structure of phase change memory
05/09/2012CN102446781A Packaging method of chip of phase change memory
05/09/2012CN102446547A Cross-point self-aligned reduced cell size phase change memory
05/09/2012CN101789491B Phase-change memory cell structure, preparation method thereof and preparation method of phase-change memory arrays
05/08/2012US8173990 Memory array with a selector connected to multiple resistive cells
05/03/2012WO2012056689A1 Nonvolatile memory device
05/03/2012US20120106232 Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells
05/03/2012US20120104352 Memory device and method for manufacturing the same
05/03/2012US20120104351 Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same
05/03/2012US20120104349 Programmable resistive memory cell with sacrificial metal
05/03/2012US20120104347 Method of forming a chalcogenide material, methods of forming a resistive random access memory device including a chalcogenide material, and random access memory devices including a chalcogenide material
05/03/2012US20120104346 Semiconductor device for providing heat management
05/03/2012US20120104345 Memristive devices with layered junctions and methods for fabricating the same
05/03/2012US20120104344 Semiconductor device
05/03/2012US20120104343 Nonvolatile Memory Cells and Methods Of Forming Nonvolatile Memory Cell
05/03/2012US20120104342 Memristive Device
05/03/2012US20120104340 Nonvolatile memory device and method for manufacturing same
05/03/2012US20120104339 Phase change memory cell
05/02/2012EP2446469A2 Encapsulated phase change cell structures and methods
05/02/2012CN101542729B Variable resistance element, nonvolatile switching element, and variable resistance memory device
05/02/2012CN101192647B Nonvolatile memory device including amorphous alloy metal oxide layer
04/2012
04/26/2012US20120099362 Memory array with metal-insulator transition switching devices
04/26/2012US20120097914 Memory device and method for manufacturing same
04/26/2012US20120097913 Integrated Circuitry Comprising Nonvolatile memory Cells And Methods Of Forming A Nonvolatile Memory Cell
04/26/2012US20120097912 Semiconductor device
04/26/2012US20120097910 Resistance Element and Inverting Buffer Circuit
04/25/2012EP2443657A1 Memristors based on mixed-metal-valence compounds
04/25/2012CN102428587A 电流控制元件、存储元件、存储装置及电流控制元件的制造方法 A current control element, the storage element, the storage device, and a method of manufacturing a current control element
04/25/2012CN102428560A Non-Volatile Storage Element, Method Of Manufacturing The Same, Method Of Supporting Design Thereof And Non-Volatile Storage Device
04/25/2012CN101764195B 一种制作纳米尺寸相变存储器的方法 A method of nano-size production of a phase change memory
04/24/2012US8164130 Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
04/19/2012WO2012051041A1 Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
04/19/2012WO2012049865A1 Nonvolatile variable resistance element and method of manufacturing the nonvolatile variable resistance element
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